AP95T10AGR-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ RoHS Compliant & Halogen-Free G BVDSS 100V RDS(ON) 6mΩ ID 145A S Description AP95T10A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-262 package is widely preferred for commercial-industrial power applications and suited for low voltage applications such as DC/DC converters. G D S TO-262(R) Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage +20 V ID@TC=25℃ Drain Current (Chip) 145 A 120 A 90 A 480 A ID@TC=25℃ Drain Current, VGS @ 10V ID@TC=100℃ Drain Current, VGS @ 10V 3 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation 277.8 W PD@TA=25℃ Total Power Dissipation 2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maixmum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value Units 0.45 ℃/W 62 ℃/W 1 201402121 AP95T10AGR-HF o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units VGS=0V, ID=250uA 100 - - V VGS=10V, ID=60A - - 6 mΩ BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 5 V gfs Forward Transconductance VDS=10V, ID=60A - 127 - S IDSS Drain-Source Leakage Current VDS=100V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=40A - 176 280 nC Qgs Gate-Source Charge VDS=80V - 30 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 80 - nC td(on) Turn-on Delay Time VDS=50V - 30 - ns tr Rise Time ID=40A - 100 - ns td(off) Turn-off Delay Time RG=3.3Ω - 90 - ns tf Fall Time VGS=10V - 100 - ns Ciss Input Capacitance VGS=0V - 9090 14550 pF Coss Output Capacitance VDS=25V - 820 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 440 - pF Rg Gate Resistance f=1.0MHz - 2 4 Ω Min. Typ. IS=40A, VGS=0V - - 1.3 V 2 Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=10A, VGS=0V - 65 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 170 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Package limitation current is 120A. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP95T10AGR-HF 600 300 T C = 150 C 400 V GS =6.0V 300 10V 9.0V 8.0V 7.0V V GS =6.0V 240 ID , Drain Current (A) 500 ID , Drain Current (A) o 10V 9.0V 8.0V 7.0V o T C = 25 C 200 180 120 60 100 0 0 0 4 8 12 16 20 0 24 Fig 1. Typical Output Characteristics 8 12 Fig 2. Typical Output Characteristics 1.6 2.6 I D =1mA I D =60A V G =10V 2.2 Normalized RDS(ON) 1.4 Normalized BVDSS 4 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) 1.2 1 0.8 0.6 1.8 1.4 1.0 0.6 0.4 0.2 -50 0 50 100 150 -50 0 o 50 100 150 T j , Junction Temperature ( o C) T j , Junction Temperature ( C) Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature 1.6 40 I D =1mA 1.2 T j =150 o C Normalized VGS(th) IS(A) 30 T j =25 o C 20 0.8 0.4 10 0 0.0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP95T10AGR-HF f=1.0MHz 12000 I D = 40 A V DS =80V 10 C iss 8000 8 C (pF) VGS , Gate to Source Voltage (V) 12 6 4000 4 2 C oss C rss 0 0 0 40 80 120 160 200 0 240 20 40 Fig 7. Gate Charge Characteristics 80 100 120 Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (R thjc) 1000 Operation in this area limited by RDS(ON) 100 100us ID (A) 60 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) 10 1ms 10ms 1 100ms DC o T C =25 C Single Pulse 0.1 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + TC Single Pulse 0.01 0.1 1 10 100 1000 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 300 150 V DS =5V Limited by package ID , Drain Current (A) ID , Drain Current (A) 250 200 150 100 100 50 o T j =150 C T j =25 o C 50 T j = -40 o C 0 0 2 4 6 0 8 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics 10 25 50 75 100 125 150 T C , Case Temperature ( o C ) Fig 12. Drain Current v.s. Case Temperature 4