FJD5553 NPN Silicon Transistor High Voltage Switch Mode Application • Fast Speed Switching • Wide Safe Operating Area • Suitable for Electronic Ballast Application DPAK Marking : J5553 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * Symbol TC=25°C unless otherwise noted Value Units BVCBO Collector-Base Voltage Parameter 1050 V BVCEO Collector-Emitter Voltage 400 V BVEBO Emitter-Base Voltage 14 V IC Collector Current (DC) 3 A ICP Collector Current (Pulse) 6 A IB Base Current (DC) 1 A IBP Collector Current (Pulse) 2 A PC Collector Dissipation 1.25 W TJ Junction Temperature 150 °C TSTG Storage Junction Temperature Range - 55 ~ 150 °C Value Units 100 °C/W * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics T =25°C unless otherwise noted a Symbol RθJA Parameter Thermal Resistance, Junction to Ambient * Device mounted on minimum pad size Ordering Information Part Number Marking Package Packing Method FJD5553TM J5553 D-PAK Tape & Reel © 2008 Fairchild Semiconductor Corporation FJD5553 Rev. A1 Remarks www.fairchildsemi.com 1 FJD5553 — NPN Silicon Transistor April 2008 Symbol Parameter Conditions Min. Typ. Max Units BVCBO Collector-Base Breakdown Voltage IC=500µA, IE=0 1050 V BVCEO Collector-Emitter Breakdown Voltage IC=5mA, IB=0 400 V BVEBO Emitter-Base Breakdown Voltage IE=500µA, IC=0 14 V VCE=5V, IC=10mA 10 VCE=3V, IC=0.4A 30 hFE * DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage IC=1A, IB=0.2A VBE(sat) Base-Emitter Saturation Voltage IC=1A, IB=0.2A Cob Output Capacitance VCB=10V, f=1MHz tON Turn On Time tSTG Storage Time VCC=125V, IC=0.5A IB1=45mA, IB2=0.5A RL=250Ω tF Fall Time tON Turn On Time tSTG Storage Time tF Fall Time EAS Avalanche Energy 60 0.23 0.5 V 1.2 V 45 pF 1.0 µs 1.2 µs µs 0.3 VCC=250V, IC=2.5A IB1=0.5A, IB2=1.0A RL=100Ω 3.5 L= 2mH 2.0 µs 2.5 µs 0.3 µs mJ * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% © 2008 Fairchild Semiconductor Corporation FJD5553 Rev. A1 www.fairchildsemi.com 2 FJD5553 — NPN Silicon Transistor Electrical Characteristics * TC=25°C unless otherwise noted 1000 o o Ta = 125 C VCE = 5V VCE(sat) [mV], SATURATION VOLTAGE Ta = 75 C hFE, DC CURRENT GAIN 100 o o Ta = 25 C Ta = - 25 C 10 1 0.01 0.1 1 IC = 5 I B o Ta = 125 C o o Ta = 25 C 100 0.01 10 Ta = - 25 C o Ta = 75 C 0.1 1 10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 1. DC Current Gain Figure 2. Saturation Voltage tSTG o 1 Ta = 25 C o tSTG & tF [ns], SWITCHING TIME VBE(sat) [V], SATURATION VOLTAGE 1000 IC = 5 IB Ta = - 25 C o Ta = 75 C o Ta = 125 C 0.1 0.01 0.1 1 100 10 0.1 10 1 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 3. Saturation Voltage Figure 4. Resistive Load Switching 1.5 tSTG PC[W], POWER DISSIPATION tSTG & tF [ns], SWITCHING TIME 10000 1000 tF 100 VCC=250V IB1=0.5A, IB2=1.0A 1.2 0.9 0.6 0.3 0.0 10 0.1 1 0 10 IC [A], COLLECTOR CURRENT 25 50 75 100 125 150 175 o Tc[ C], CASE TEMPERATURE Figure 5. Resistive Load Switching Figure 6. Power Derating © 2008 Fairchild Semiconductor Corporation FJD5553 Rev. A1 tF VCC=125V IB1=45mA, IB2=0.5A www.fairchildsemi.com 3 FJD5553 — NPN Silicon Transistor Typical Characteristics FJD5553 — NPN Silicon Transistor Mechanical Dimensions D-PAK Dimensions in Millimeters © 2008 Fairchild Semiconductor Corporation FJD5553 Rev. A1 www.fairchildsemi.com 4 The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. 2. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I31 © 2008 Fairchild Semiconductor Corporation FJD5553 Rev. A1 www.fairchildsemi.com 5 FJD5553 NPN Silicon Transistor TRADEMARKS