AP01L60T
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D
▼ Fast Switching Characteristics
▼ Simple Drive Requirement
BVDSS
600V
RDS(ON)
12Ω
ID
G
160mA
S
Description
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The TO-92 package is universally used for all commercial-industrial
applications.
G
D
TO-92
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
± 30
V
ID@TA=25℃
Continuous Drain Current, VGS @ 10V
160
mA
ID@TA=100℃
Continuous Drain Current, VGS @ 10V
100
mA
1
IDM
Pulsed Drain Current
300
mA
PD@TC=25℃
Total Power Dissipation
0.83
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data & specifications subject to change without notice
Max.
Value
Unit
150
℃/W
200530031
AP01L60T
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
600
-
-
V
-
0.8
-
V/℃
VGS=10V, ID=0.5A
-
-
12
Ω
VDS=VGS, ID=250uA
2
-
4
V
VDS=10V, ID=0.5A
-
0.8
-
S
VDS=600V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=480V, VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS= ± 30V
-
-
±100
nA
ID=1A
-
4.0
-
nC
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
3
VGS=0V, ID=1mA
2
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=480V
-
1.0
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
1.1
-
nC
VDD=300V
-
6.6
-
ns
3
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
5.0
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
11.7
-
ns
tf
Fall Time
RD=300Ω
-
9.2
-
ns
Ciss
Input Capacitance
VGS=0V
-
170
-
pF
Coss
Output Capacitance
VDS=25V
-
30.7
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
5.1
-
pF
Min.
Typ.
VD=VG=0V , VS=1.2V
-
-
160
mA
IS=160mA, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
IS
VSD
Parameter
Continuous Source Current ( Body Diode )
3
Forward On Voltage
Notes:
1.Pulse width limited by safe operating area.
3.Pulse width <300us , duty cycle <2%.
Test Conditions
Max. Units
AP01L60T
1
1.5
10V
6.0V
5.5V
5.0V
ID , Drain Current (A)
T A =25 C
10V
5.0V
T A =150 o C
0.75
ID , Drain Current (A)
o
1
0.5
V GS =4.5V
4.5V
0.5
V GS =4.0V
0.25
0
0
0
12
24
36
0
10
20
30
40
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
2.8
I D =0.5A
V GS =10V
2.4
1.1
Normalized RDS(ON)
Normalized BVDSS (V)
2
1
1.6
1.2
0.8
0.9
0.4
0
0.8
-50
0
50
100
T j , Junction Temperature (
o
-50
150
Fig 3. Normalized BV DSS v.s. Junction
Temperature
100
150
1
3
VGS(th) (V)
4
IS (A)
50
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
T j = 25 o C
T j = 150 o C
0
T j , Junction Temperature ( o C )
C)
0.1
2
0.01
1
0
0.4
0.8
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP01L60T
f=1.0MHz
1000
I D =1.0A
V DS =480V
12
Ciss
100
C (pF)
VGS , Gate to Source Voltage (V)
16
8
Coss
10
4
Crss
0
1
0
1.5
3
4.5
6
1
10
Fig 7. Gate Charge Characteristics
28
Fig 8. Typical Capacitance Characteristics
1.2
40
0.9
30
PD (W)
ID , Drain Current (A)
19
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
0.6
0.3
20
10
0
0
25
50
75
100
125
150
0
50
100
150
o
T A , Case Temperature ( o C )
T A , Case Temperature (
C)
Fig 9. Maximum Drain Current v.s.
Fig 10. Typical Power Dissipation
Case Temperature
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q