AP13P15GS/P
Pb Free Plating Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
-150V
RDS(ON)
300mΩ
ID
G
▼ RoHS Compliant
BVDSS
-13A
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
GD
S
TO-263(S)
The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP13P15GP) are available for low-profile applications.
G
Absolute Maximum Ratings
Symbol
Parameter
D
TO-220(P)
S
Rating
Units
VDS
Drain-Source Voltage
-150
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
-13
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
-8.2
A
1
IDM
Pulsed Drain Current
52
A
PD@TC=25℃
Total Power Dissipation
96
W
Linear Derating Factor
0.77
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
1.3
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
62
℃/W
Data and specifications subject to change without notice
200728051-1/4
AP13P15GS/P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-150
-
-
V
-
-0.1
-
V/℃
VGS=-10V, ID=-7A
-
-
300
mΩ
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
VGS=0V, ID=-1mA
2
Max. Units
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-7A
-
6
-
S
IDSS
Drain-Source Leakage Current (Tj=25oC)
VDS=-150V, VGS=0V
-
-
-25
uA
Drain-Source Leakage Current (Tj=150oC)
VDS=-120V, VGS=0V
-
-
-100
uA
Gate-Source Leakage
VGS= ±20V
-
-
±100
nA
ID=-7A
-
38
60
nC
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-120V
-
5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-10V
-
15
-
nC
VDS=-75V
-
11
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-7A
-
21
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=-10V
-
60
-
ns
tf
Fall Time
RD=10.7Ω
-
36
-
ns
Ciss
Input Capacitance
VGS=0V
-
1210 1940
pF
Coss
Output Capacitance
VDS=-25V
-
220
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
60
-
pF
Rg
Gate Resistance
f=1.0MHz
-
3.5
5
Ω
Min.
Typ.
IS=-7A, VGS=0V
-
-
-1.3
V
IS=-7A, VGS=0V,
-
110
-
ns
dI/dt=-100A/µs
-
620
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
2/4
AP13P15GS/P
25
25
-10V
-7.0V
T C =25 o C
20
20
-ID , Drain Current (A)
-ID , Drain Current (A)
-10V
TC=150oC
15
-5.0V
10
-4.5V
5
-7.0V
15
-5.0V
10
-4.5V
5
V G = - 3 .0V
V G = - 3 .0V
0
0
0
5
10
15
20
25
0
5
10
15
20
25
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1400
2.3
I D =- 7 A
V G =-10V
I D = -7 A
T C =25 ℃
Normalized RDS(ON)
1.8
RDS(ON) (mΩ )
1000
600
1.3
0.8
0.3
200
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
6
Normalized -VGS(th) (V)
1.5
4
o
o
T j =25 C
-IS(A)
T j =150 C
2
1.1
0.7
0.3
0
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP13P15GS/P
f=1.0MHz
12
10000
-VGS , Gate to Source Voltage (V)
10
I D = -7A
V DS = -120V
C iss
1000
C (pF)
8
6
C oss
100
4
C rss
2
10
0
0
10
20
30
40
1
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthjc)
1
100us
10
-ID (A)
1ms
10ms
100ms
DC
1
T C =25 o C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.1
0.01
0.1
1
10
100
1000
0.00001
0.0001
-V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
8
VG
V DS =-5V
-ID , Drain Current (A)
6
QG
T j =25 o C
T j =150 o C
-10V
QGS
4
QGD
2
Charge
Q
0
0
2
4
6
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4