MMBT4401 MMBT4401 Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2006-05-09 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse 1 1.3±0.1 2.5 max 3 Type Code 250 mW SOT-23 (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert 2 1.9 Dimensions - Maße [mm] 1=B 2=E 3=C Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) MMBT4401 Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open VCEO 40 V Collector-Base-voltage – Kollektor-Basis-Spannung E open VCBO 60 V Emitter-Base-voltage – Emitter-Basis-Spannung C open VEBO 6V Power dissipation – Verlustleistung Ptot 250 mW 1) Collector current – Kollektorstrom (dc) IC 600 mA Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. hFE hFE hFE hFE hFE 20 40 80 100 40 – – – – – – – – 300 – Small signal current gain – Kleinsignal-Stromverstärkung hfe 40 – 500 Input impedance – Eingangs-Impedanz hie 1 kΩ – 15 kΩ Output admittance – Ausgangs-Leitwert hoe 1 µS – 30 µS Reverse voltage transfer ratio – Spannungsrückwirkung hre – 8*10-4 DC current gain – Kollektor-Basis-Stromverhältnis ) 2 IC IC IC IC IC = = = = = 0.1 mA, 1 mA, 10 mA, 150 mA, 500 mA, VCE VCE VCE VCE VCE = = = = = 1 1 1 1 2 V V V V V h-Parameters at/bei VCE = 10 V, IC = 1 mA, f = 1 kHz 1 2 -4 0.1*10 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 MMBT4401 Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. – – – – 0.40 V 0.75 V VBEsat VBEsat 0.75 V – – – 0.95 V 1.2 V ICBV – – 100 nA IEBV – –- 100 nA fT 250 MHz – – CCBO – – 6.5 pF CEBO – – 30 pf VCC = 30 V, VEB = 2 V IC = 150 mA, IB1 = 15 mA td – – 15 ns tr – – 20 ns VCC = 30 V, IC = 150 mA IB1 = IB2 = 15 mA ts – – 225 ns tf – – 30 ns Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA VCEsat VCEsat Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA Collector-Base cutoff current – Kollektor-Basis-Reststrom VCE = 35 V, VEB = 0,4 V Emitter-Base cutoff current – Emitter-Basis-Reststrom VCE = 35 V, VEB = 0,4 V Gain-Bandwidth Product – Transitfrequenz IC = 20 mA, VCE = 10 V, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 5 V, IE = ie = 0, f = 1 MHz Emitter-Base Capacitance – Emitter-Basis-Kapazität VEB = 0.5 V, IC = ic = 0, f = 1 MHz Switching times – Schaltzeiten (between 10% and 90% levels) delay time rise time storage time fall time Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren Marking - Stempelung 2 1 2 RthA < 420 K/W 1) MMBT4403 MMBT4401 = 2X Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG