ESD5004 ESD Protection Diode Low Capacitance ESD Protection Diode The ESD5004 is designed for applications requiring ESD protection. It is intended to be used in sensitive equipment such as smartphone, wireless headsets, digital cameras, computers, printers, communication systems, and other applications. The integrated design provides very effective and reliable protection for four separate lines using only one package. This device is ideal for situations where board space is at a premium. www.onsemi.com MARKING DIAGRAM X3DFN4 CASE 714AA Features • Low Capacitance (5 pF Max, I/O to GND) • Four Separate Bi−directional Configurations for Protection • Protection for the Following IEC Standards: • • 4 M IEC 61000−4−2 (Level 4) Low ESD Clamping Voltage These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications = Specific Device Code = Date Code PIN CONFIGURATION AND SCHEMATIC 2 • Smartphone and Portable Electronics • Notebooks, Desktops, Servers • Microprocessor Based Equipment 3 5 1 4 (Bottom View) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Operating Junction Temperature Range TJ −55 to +125 °C Storage Temperature Range Tstg −65 to +150 °C Lead Solder Temperature − Maximum (10 Seconds) TL 260 °C ESD ESD ±12 ±15 kV kV IEC 61000−4−2 Contact (ESD) IEC 61000−4−2 Air (ESD) 4M Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1 2 3 4 5 ORDERING INFORMATION Device ESD5004MXTBG Package Shipping† X3DFN4 (Pb−Free) 8000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. See Application Note AND8308/D for further description of survivability specs. © Semiconductor Components Industries, LLC, 2015 April, 2017 − Rev. 3 1 Publication Order Number: ESD5004/D ESD5004 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Reverse Working Voltage VRWM Breakdown Voltage VBR Conditions Min Typ I/O Pin to GND IT = 1 mA, I/O Pin to GND Max Unit 3.3 V 1.0 mA 9.1 V 3.9 V Reverse Leakage Current IR VRWM = 3.3 V, I/O Pin to GND Clamping Voltage VC 8 x 20 ms, Ipp = 1 A 5.0 Clamping Voltage TLP (Note 1) See Figures 4 and 5 VC IPP = 16 A IPP = −16 A 10 4.5 Junction Capacitance CJ VR = 0 V, f = 1 MHz between I/O Pins and GND IEC 61000−4−2 Level 4 equivalent (±8 kV Contact, ±15 kV Air) 3.5 V 5.0 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z0 = 50 W, tp = 100 ns, tr = 4 ns, averaging window; t1 = 30 ns to t2 = 60 ns. IEC61000−4−2 Waveform IEC 61000−4−2 Spec. Ipeak Level Test Voltage (kV) First Peak Current (A) Current at 30 ns (A) Current at 60 ns (A) 1 2 7.5 4 2 2 4 15 8 4 3 6 22.5 12 6 4 8 30 16 8 100% 90% I @ 30 ns I @ 60 ns 10% tP = 0.7 ns to 1 ns Figure 1. IEC61000−4−2 Spec www.onsemi.com 2 ESD5004 45 5 40 0 35 −5 30 −10 VOLTAGE (V) 25 20 15 −15 −20 −25 10 −30 5 −35 0 −40 −5 −20 0 20 40 60 80 100 120 −45 −20 140 0 20 40 Figure 2. IEC61000−4−2 +8 kV Contact ESD Clamping Voltage 20 100 120 140 Figure 3. IEC61000−4−2 −8 kV Contact ESD Clamping Voltage −20 10 10 −18 18 −16 EQUIVALENT VIEC (kV) TLP CURRENT (A) 8 16 8 −14 14 6 12 −12 6 −10 10 4 8 6 2 4 −8 4 −6 −4 2 −2 2 2 4 6 8 10 12 14 VC, VOLTAGE (V) 16 18 0 0 20 0 2 Figure 4. Positive TLP I−V Curve 4 6 8 10 12 14 VC, VOLTAGE (V) 3.5 3.0 I/O−GND 2.5 2.0 1.5 1.0 0.5 0 0 0.5 16 Figure 5. Negative TLP I−V Curve 4.0 C (pF) TLP CURRENT (A) 80 TIME (ns) TIME (ns) 0 0 60 1.0 1.5 2.0 2.5 VR, VOLTAGE (V) Figure 6. CV Characteristics www.onsemi.com 3 3.0 3.5 18 0 20 EQUIVALENT VIEC (kV) VOLTAGE (V) TYPICAL CHARACTERISTICS ESD5004 Transmission Line Pulse (TLP) Measurement L Transmission Line Pulse (TLP) provides current versus voltage (I−V) curves in which each data point is obtained from a 100 ns long rectangular pulse from a charged transmission line. A simplified schematic of a typical TLP system is shown in Figure 7. TLP I−V curves of ESD protection devices accurately demonstrate the product’s ESD capability because the 10s of amps current levels and under 100 ns time scale match those of an ESD event. This is illustrated in Figure 8 where an 8 kV IEC 61000−4−2 current waveform is compared with TLP current pulses at 8 A and 16 A. A TLP I−V curve shows the voltage at which the device turns on as well as how well the device clamps voltage over a range of current levels. For more information on TLP measurements and how to interpret them please refer to AND9007/D. S Attenuator ÷ 50 W Coax Cable 10 MW IM 50 W Coax Cable VM DUT VC Oscilloscope Figure 7. Simplified Schematic of a Typical TLP System Figure 8. Comparison Between 8 kV IEC 61000−4−2 and 8 A and 16 A TLP Waveforms www.onsemi.com 4 ESD5004 PACKAGE DIMENSIONS X3DFN4 0.525x0.925, 0.3P CASE 714AA ISSUE B PIN ONE REFERENCE 2X 0.05 C 2X 0.05 C NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. A B D ÉÉ ÉÉ MILLIMETERS DIM MIN MAX A 0.24 0.32 A1 0.00 0.05 b 0.12 0.18 D 0.525 BSC E 0.925 BSC e 0.30 BSC L 0.173 0.233 L2 0.42 0.48 E TOP VIEW A 0.05 C RECOMMENDED SOLDER FOOTPRINT* 0.05 C A1 SIDE VIEW NOTE 3 SEATING PLANE C 0.66 5X 5X L2 b 0.07 1 4X 0.38 0.18 M 2 C A B NOTE 3 4X 1.08 1 L 0.30 PITCH 4 3 DIMENSIONS: MILLIMETERS e e/2 BOTTOM VIEW *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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