Spec. No. : C125E3 Issued Date : 2016.03.21 Revised Date : Page No. : 1/10 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN9N60BE3 BVDSS ID @ VGS=10V, TC=25°C 600V RDSON(TYP) @ VGS=10V, ID=4.5A 8.5A 0.79Ω Description The MTN9N60BE3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Applications • Switching Mode Power Supply • LCD Panel Power • Adapter • E-bike Charger Ordering Information Device MTN9N60BE3-0-UB-X Package TO-220 (RoHS compliant package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTN9N60BE3 CYStek Product Specification CYStech Electronics Corp. Symbol Spec. No. : C125E3 Issued Date : 2016.03.21 Revised Date : Page No. : 2/10 Outline MTN9N60BE3 TO-220 G：Gate D：Drain S：Source GDS Absolute Maximum Ratings (TC=25°C) Parameter Symbol Limits Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=10V, TC=25°C Continuous Drain Current @ VGS=10V, TC=100°C Pulsed Drain Current @ VGS=10V (Note 1) Single Pulse Avalanche Current (Note 2) Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds Maximum Temperature for Soldering @ Package Body for 10 seconds Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature VDS VGS IDM IAS EAS EAR 600 ±30 8.5* 5.4* 34* 8.5 252 5 TL 300 TPKG 260 PD 150 1.2 -55~+150 ID Tj, Tstg Unit V A mJ °C W W/°C °C *Drain current limited by maximum junction temperature Note : 1. Pulse width limited by maximum junction temperature. 2. IAS=8.5A, VDD=50V, L=7mH, VG=10V, starting TJ=+25℃. MTN9N60BE3 CYStek Product Specification Spec. No. : C125E3 Issued Date : 2016.03.21 Revised Date : Page No. : 3/10 CYStech Electronics Corp. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol RθJC RθJA Value 0.83 62.5 Unit °C/W Characteristics (TC=25°C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) *GFS IGSS IDSS Min. Typ. Max. Unit Test Conditions 600 2.0 - 0.9 9.7 0.79 4.0 ±100 1 10 1.2 V V/°C V S nA Ω VGS=0V, ID=250μA, Tj=25℃ Reference to 25°C, ID=250μA VDS = VGS, ID=250μA VDS =15V, ID=4.5A VGS=±30V VDS =600V, VGS =0V VDS =480V, VGS =0V, Tj=125°C VGS =10V, ID=4.5A 34.5 5.4 17.1 14 14.8 49 15.2 943 117 27 - nC ID=8.5A, VDD=300V, VGS=10V ns VDD=300V, ID=8.5A, VGS=10V, RG=2.7Ω pF VGS=0V, VDS=25V, f=1MHz 408 2.8 1.5 8.5 34 - V IS=8.5A, VGS=0V *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *VSD *IS *ISM *trr *Qrr - μA A ns μC VGS=0V, IF=8.5A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTN9N60BE3 CYStek Product Specification Spec. No. : C125E3 Issued Date : 2016.03.21 Revised Date : Page No. : 4/10 CYStech Electronics Corp. Typical Characteristics Static Drain-Source On-resistance vs Ambient Temperature Typical Output Characteristics 3.0 20 18 ID, Drain Current(A) 16 RDS(ON), Normalized Static Drain-Source On-state Resistance 10V,9V,8V,7V 6V 14 12 10 8 6 5V 4 2 VGS=4.5V 0 2.5 2.0 1.5 1.0 ID=4.5A, VGS=10V 0.5 0.0 0 10 20 30 VDS, Drain-Source Voltage(V) 40 -75 50 -50 24 1200 VGS=10V 1000 800 600 400 16 12 8 200 4 0 0 0.01 0.1 1 ID, Drain Current(A) VDS=30V Ta=25°C 20 ID, Drain Current(A) R DS(ON) , Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 TA, Ambient Temperature(°C) Drain Current vs Gate-Source Voltage Static Drain-Source On-State resistance vs Drain Current VDS=10V 0 10 2 4 6 8 VGS, Gate-Source Voltage(V) 10 Forward Drain Current vs Source-Drain Voltage Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 2000 1800 1600 IF, Forward Current(A) RDS(ON), Static Drain-Source On-State Resistance(mΩ) -25 1400 1200 1000 800 600 VGS=0V 10 1 Ta=150°C Ta=25°C 0.1 0.01 400 ID=4.5A 200 Ta=25°C 0.001 0 0 2 4 6 VGS, Gate-Source Voltage(V) MTN9N60BE3 8 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, Source Drain Voltage(V) CYStek Product Specification Spec. No. : C125E3 Issued Date : 2016.03.21 Revised Date : Page No. : 5/10 CYStech Electronics Corp. Typical Characteristics(Cont.) Brekdown Voltage vs Ambient Temperature Capacitance vs Reverse Voltage 10000 BVDSS, Normalized Drain-Source Breakdown Voltage 1.4 Capacitance(pF) Ciss 1000 Coss 100 f=1MHz 1.2 1.0 0.8 ID=250μA, VGS=0V Crss 10 0.6 0 5 10 15 20 25 VDS, Drain-to-Source Voltage(V) 30 -75 -50 100μs ID, Drain Current(A) 10 10 10 μs VDS=120V VGS, Gate-Source Voltage(V) RDS(ON) Limited 1ms 10ms 100ms 1 DC TC=25°C, Tj(max)=150°C VGS=10V, RθJC=0.83°C/W Single pulse 0.1 1 10 100 VDS=480V 4 2 ID=8.5A 0 5 10 15 20 25 30 35 VDS, Drain-Source Voltage(V) Qg, Total Gate Charge(nC) Maximum Drain Current vs Case Temperature Threshold Voltage vs Junction Tempearture VGS(th), Normalized Threshold Voltage 8 ID, Maximum Drain Current(A) VDS=300V 6 1000 9 7 6 5 4 3 VGS=10V, RθJC=0.83°C/W 1 8 0 0.01 2 0 25 50 75 100 125 150 175 TA, Ambient Temperature(°C) Gate Charge Characteristics Maximum Safe Operating Area 100 -25 40 1.4 1.2 ID=1mA 1 0.8 0.6 ID=250μA 0.4 0.2 0 25 50 75 100 125 TC, Case Temperature(°C) MTN9N60BE3 150 175 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C125E3 Issued Date : 2016.03.21 Revised Date : Page No. : 6/10 CYStech Electronics Corp. Typical Characteristics(Cont.) Forward Transfer Admittance vs Drain Current Single Pulse Power Rating, Junction to Case GFS , Forward Transfer Admittance(S) 100 5000 4500 TJ(MAX) =150°C TC=25°C RθJC=0.83°C/W 4000 10 Power (W) 3500 1 0.1 0.01 0.001 0.01 3000 2500 2000 VDS=15V 1500 Ta=25°C Pulsed 1000 0.1 1 ID, Drain Current(A) 500 10 0 0.0001 0.001 0.01 0.1 Pulse Width(s) 1 10 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=0.83 ° C/W 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 1.E-04 MTN9N60BE3 1.E-03 1.E-02 1.E-01 t1, Square Wave Pulse Duration(s) 1.E+00 1.E+01 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C125E3 Issued Date : 2016.03.21 Revised Date : Page No. : 7/10 Test Circuit and Waveforms MTN9N60BE3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C125E3 Issued Date : 2016.03.21 Revised Date : Page No. : 8/10 Test Circuit and Waveforms(Cont.) MTN9N60BE3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C125E3 Issued Date : 2016.03.21 Revised Date : Page No. : 9/10 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTN9N60BE3 CYStek Product Specification Spec. No. : C125E3 Issued Date : 2016.03.21 Revised Date : Page No. : 10/10 CYStech Electronics Corp. TO-220 Dimension Marking: 4 Device Name Date Code CYS 9N60B □□□□ 1 3-Lead TO-220 Plastic Package CYStek Package Code: E3 2 3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain *: Typical Millimeters Min. Max. 4.400 4.600 2.250 2.550 0.710 0.910 1.170 1.370 0.330 0.650 1.200 1.400 10.250 9.910 9.750 8.950 12.650 12.950 DIM A A1 b b1 c c1 D E E1 Inches Min. Max. 0.173 0.181 0.089 0.100 0.028 0.036 0.046 0.054 0.013 0.026 0.047 0.055 0.404 0.390 0.384 0.352 0.510 0.498 DIM e e1 F H h L L1 V Φ Millimeters Min. Max. 2.540* 4.980 5.180 2.650 2.950 8.100 7.900 0.000 0.300 12.900 13.400 2.850 3.250 7/500 REF 3.400 3.800 Inches Min. Max. 0.100* 0.196 0.204 0.104 0.116 0.319 0.311 0.000 0.012 0.508 0.528 0.112 0.128 0.295 REF 0.134 0.150 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN9N60BE3 CYStek Product Specification