PHILIPS BU4507DX Silicon diffused power transistor Datasheet

Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4507DX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope with an integrated damper diode intended for use in horizontal deflection circuits of colour television
receivers and computer monitors. Features exceptional tolerance to base drive and collector current load variations
resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
VF
tf
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
VBE = 0 V
4
1.7
300
1500
800
8
15
45
3.0
2.1
400
V
V
A
A
W
V
A
V
ns
PINNING - SOT399
PIN
PIN CONFIGURATION
DESCRIPTION
1
base
2
collector
3
emitter
Ths ≤ 25 ˚C
IC = 4 A; IB = 1.0 A
f = 16kHz
IF = 4 A
ICsat = 4 A; f = 16kHz
case isolated
SYMBOL
c
case
b
Rbe
e
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
Ths ≤ 25 ˚C
MIN.
MAX.
UNIT
-65
-
1500
800
8
15
4
6
5
45
150
150
V
V
A
A
A
A
A
W
˚C
˚C
TYP.
MAX.
UNIT
-
2.8
K/W
35
-
K/W
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
Rth j-hs
Junction to heatsink
with heatsink compound
Rth j-a
Junction to ambient
in free air
1 Turn-off current.
January 1999
1
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4507DX
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
Visol
Repetitive peak voltage from all
three terminals to external
heatsink
R.H. ≤ 65 % ; clean and dustfree
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN.
TYP.
MAX.
UNIT
-
-
2500
V
-
22
-
pF
MIN.
TYP.
MAX.
UNIT
-
-
1.0
2.0
mA
mA
800
-
-
V
7.5
0.83
4.2
-
13.5
30
0.92
7
5.7
1.7
3.0
1.01
7.3
2.1
V
Ω
V
V
TYP.
MAX.
UNIT
3.7
300
4.6
400
µs
ns
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL
ICES
ICES
VCEOsust
BVEBO
Rbe
VCEsat
VBEsat
hFE
hFE
VF
PARAMETER
Collector cut-off current
CONDITIONS
2
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax
Tj = 125 ˚C
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA;
L = 25 mH
Emitter-base breakdown voltage
IB = 600 mA
Base-emitter resistance
VEB = 6 V
Collector-emitter saturation voltages IC = 4 A; IB = 1.0 A
Base-emitter saturation voltage
IC = 4 A; IB = 1.0 A
DC current gain
IC = 500 mA; VCE = 5 V
IC = 4 A; VCE = 5 V
Diode forward voltage
IF = 4 A
V
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
ICsat = 4 A; IB1 = 0.8 A;(IB2 = -2 A)
ts
tf
Switching times (16 kHz line
deflection circuit)
Turn-off storage time
Turn-off fall time
Anti-parallel diode forward recovery
voltage
Anti-parallel diode forward recovery
time
IF = 4 A; dIF/dt = 50 A/µs
18.5
-
V
VF = 5 V
500
-
ns
Vfr
tfr
2 Measured with half sine-wave voltage (curve tracer).
January 1999
2
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
ICsat
TRANSISTOR
IC
BU4507DX
+ 150 v nominal
adjust for ICsat
DIODE
t
Lc
IB1
IB
t
20us
26us
D.U.T.
IB2
LB
IBend
Cfb
64us
VCE
-VBB
Rbe
t
Fig.1. Switching times waveforms (16 kHz).
Fig.4. Switching times test circuit.
ICsat
100
hFE
90 %
Ths = 25 C
Ths = 85 C
VCE = 1V
IC
10 %
tf
10
t
ts
IB
IB1
t
1
0.01
- IB2
Fig.2. Switching times definitions.
I
I
F
0.1
1
IC / A
10
Fig.5. High and low DC current gain.
100
F
hFE
BU4507DF/X/Z
VCE = 5V
Ths = 25 C
Ths = 85 C
10%
time
t fr
V
10
F
V
5V
V
fr
F
1
0.01
time
Fig.3. Definition of anti-parallel diode Vfr and tfr.
January 1999
0.1
1
IC / A
10
Fig.6. High and low DC current gain.
3
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4507DX
BU4507DF/X/Z
10
120
Normalised Power Derating
PD%
with heatsink compound
110
Ths = 25 C
Ths = 85 C
100
90
80
70
1
60
50
40
IC/IB = 5
0.1
30
20
10
0
0
0.01
0.1
1
10
VBESAT \ V
40
60
80
Ths / C
100
120
140
Fig.10. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C
Fig.7. Typical collector-emitter saturation voltage.
1.2
20
100
BU4507DF/X/Z
Zth K/W
BU4507AF
10
Ths = 25 C
Ths = 85 C
1.1
0.5
1
0.2
1
0.1
0.05
0.1
0.9
0.02
IC = 4 A
0.8
PD
0.01
0.7
tp
D=
0
T
0.6
tp
T
0
1
2
3
IB / A
0.001
1.0E-07
4
1.0E-03
1.0E-01
t
1.0E+01
t/s
Fig.8. Typical base-emitter saturation voltage.
Fig.11. Transient thermal impedance.
BU4507D ts/tf
ts/tf/ us
10
1.0E-05
ICsat = 4 A
Ths = 85 C
Freq = 16 kHz
8
6
4
2
0
0
0.5
1
1.5
2
2.5
IB / A
3
Fig.9. Typical collector storage and fall time.
IC =4 A; Tj = 85˚C; f = 16kHz
January 1999
4
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4507DX
MECHANICAL DATA
Dimensions in mm
5.8 max
16.0 max
Net Mass: 5.88 g
3.0
0.7
4.5
3.3
10.0
27
max
25
25.1
25.7
22.5
max
5.1
2.2 max
18.1
min
4.5
1.1
0.4 M
2
5.45
0.9 max
5.45
3.3
Fig.12. SOT399; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
January 1999
5
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4507DX
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
January 1999
6
Rev 1.000
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