Excelics EPA160A/EPA160AV DATA SHEET High Efficiency Heterojunction Power FET • • • • • • • +31.0dBm TYPICAL OUTPUT POWER 8.5dB TYPICAL POWER GAIN FOR EPA160A AND 10.0dB FOR EPA160AV AT 18GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY EPA160AV WITH VIA HOLE SOURCE GROUNDING Idss SORTED IN 40mA PER BIN RANGE Chip Thickness: 75 ± 20 microns All Dimensions In Microns : Via Hole No Via Hole For EPA160A O ELECTRICAL CHARACTERISTICS (Ta = 25 C) PARAMETERS/TEST CONDITIONS SYMBOLS P1dB G1dB EPA160A MIN TYP 29.0 31.0 MAX MIN 29.0 TYP Output Power at 1dB Compression f=12GHz Vds=8V, Ids=50% Idss f=18GHz Gain at 1dB Compression f=12GHz Vds=8V, Ids=50% Idss f=18GHz 8.5 10.0 f=12GHz 45 46 31.0 9.5 UNIT EPA160AV MAX 31.0 dBm 31.0 11.5 10.0 12.0 dB Gain at 1dB Compression PAE Vds=8V, Ids=50% Idss Idss Saturated Drain Current Vds=3V, Vgs=0V 290 480 Gm Transconductance Vds=3V, Vgs=0V 320 500 Vp Pinch-off Voltage Vds=3V, Ids=4.5mA 660 -1.0 290 480 320 500 -2.5 -1.0 BVgd Drain Breakdown Voltage Igd=1.6mA -11 -15 -11 -15 BVgs Source Breakdown Voltage Igs=1.6mA -7 -14 -7 -14 Rth Thermal Resistance (Au-Sn Eutectic Attach) 30 % 660 mA mS -2.5 V V V o 22 C/W O MAXIMUM RATINGS AT 25 C SYMBOLS PARAMETERS EPA160A ABSOLUTE1 EPA160AV CONTINUOUS2 ABSOLUTE1 CONTINUOUS2 Vds Drain-Source Voltage 12V 8V 12V 8V Vgs Gate-Source Voltage -8V -3V -8V -3V Ids Drain Current Idss 475mA Idss 625mA Igsf Forward Gate Current 80mA 14mA 80mA 14mA Pin Input Power 28dBm Tch Channel Temperature 175oC @ 3dB Compression 150oC o 28dBm @ 3dB Compression 175oC o 150oC o Tstg Storage Temperature -65/175 C -65/150 C -65/175 C -65/150oC Pt Total Power Dissipation 4.5W 3.8W 6.0W 5.0W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com EPA160A/EPA160AV DATA SHEET High Efficiency Heterojunction Power FET EPA160A P-1dB & PAE vs. Vds Pout & PAE vs. Pin f = 12 GHz Vds = 8V, Ids = 50% Idss 50 45 40 35 30 25 20 15 10 4 5 6 7 8 Pout (dBm) or PAE (%) 40 38 36 34 32 30 28 26 24 PAE (%) P-1dB (dBm) f = 12 GHz Ids = 50% Idss 50 PAE 40 30 Pout 20 10 0 -5 0 Drain-Source Voltage (V) 5 10 15 20 25 Pin (dBm) S-PARAMETERS EPA160A 8V, 1/2 Idss FREQ (GHz) 1.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 --- S11 --MAG ANG 0.915 -119.9 0.907 -149.2 0.907 -168.1 0.908 -180.0 0.912 174.7 0.918 170.0 0.923 165.9 0.931 162.9 0.936 160.3 0.941 159.3 0.936 158.5 EPA160AV FREQ (GHz) 1.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 --- S11 --MAG ANG 0.922 -115.7 0.914 -146.8 0.917 -165.9 0.923 -176.7 0.929 -177.6 0.930 -178.2 0.936 175.2 0.941 171.3 0.950 167.4 0.953 168.3 0.955 165.1 --- S21 --MAG ANG 14.906 114.4 8.322 96.0 4.370 77.6 2.898 63.8 2.172 52.5 1.693 41.7 1.349 31.4 1.084 22.4 0.896 13.7 0.761 5.9 0.675 -2.0 --- S12 --MAG ANG 0.027 31.0 0.029 19.1 0.031 14.5 0.030 14.2 0.030 16.0 0.028 17.0 0.028 21.7 0.028 23.4 0.028 25.0 0.029 25.3 0.031 25.6 --- S22 --FREQ --- S11 --MAG ANG (GHz) MAG ANG 0.302 -128.9 21.0 0.932 155.6 0.331 -146.1 22.0 0.932 150.8 0.362 -151.0 24.0 0.932 143.6 0.411 -150.0 26.0 0.928 139.3 0.448 -152.1 28.0 0.917 135.6 0.498 -155.7 30.0 0.917 133.4 0.549 -160.3 32.0 0.912 128.2 0.601 -162.8 34.0 0.915 123.6 0.658 -166.7 36.0 0.942 126.8 0.697 -170.4 38.0 0.957 129.8 0.725 -175.6 40.0 0.952 138.3 --- S21 --MAG ANG 0.642 -5.2 0.601 -8.9 0.526 -16.4 0.460 -23.2 0.403 -31.9 0.350 -39.1 0.294 -46.1 0.255 -50.3 0.223 -52.3 0.212 -53.8 0.205 -60.1 --- S12 --MAG ANG 0.035 25.7 0.035 26.0 0.040 27.1 0.043 28.0 0.049 25.7 0.051 20.1 0.048 19.9 0.048 23.0 0.048 22.2 0.055 17.0 0.055 4.9 --- S22 --MAG ANG 0.744 -175.4 0.747 -174.5 0.778 -175.2 0.783 -179.1 0.820 170.8 0.834 164.0 0.865 162.3 0.876 163.9 0.869 162.9 0.872 158.9 0.843 147.4 --- S12 --MAG ANG 0.027 30.9 0.031 17.2 0.030 7.9 0.029 4.3 0.027 4.6 0.025 4.2 0.023 1.8 0.021 1.5 0.021 2.2 0.022 3.2 0.022 3.0 --- S22 --FREQ --- S11 --MAG ANG (GHz) MAG ANG 0.271 -114.5 21.0 0.957 163.3 0.299 -134.2 22.0 0.956 162.5 0.341 -140.5 24.0 0.954 159.0 0.393 -140.1 26.0 0.953 158.6 0.430 -148.0 28.0 0.932 153.0 0.485 -157.8 30.0 0.918 146.4 0.556 -161.5 32.0 0.877 145.0 0.626 -167.2 34.0 0.934 144.2 0.688 -170.1 36.0 0.968 144.4 0.732 -176.3 38.0 0.985 146.4 0.768 -177.8 40.0 0.986 146.4 --- S21 --MAG ANG 0.582 -11.9 0.536 -15.4 0.452 -22.5 0.384 -30.1 0.335 -37.8 0.295 -46.5 0.262 -56.0 0.229 -63.9 0.214 -69.5 0.201 -74.3 0.189 -77.5 --- S12 --MAG ANG 0.023 5.0 0.024 4.2 0.024 8.6 0.026 10.9 0.026 11.9 0.028 9.1 0.027 -0.3 0.024 -3.7 0.025 -6.0 0.028 -22.8 0.035 -40.3 --- S22 --MAG ANG 0.766 -179.4 0.786 179.1 0.821 176.3 0.844 169.1 0.880 165.4 0.899 161.7 0.949 153.2 0.896 146.3 0.916 141.6 0.952 137.4 0.952 137.2 8V, 1/2 Idss --- S21 --MAG ANG 13.969 116.1 7.872 96.1 4.057 76.9 2.690 63.0 2.027 51.5 1.596 40.1 1.273 28.3 1.025 17.7 0.833 8.1 0.695 0.3 0.597 -7.2 Note: The data included 0.7 mils diameter Au bonding wires; 3 gate wires, 15 mils each; 3 drain wires, 20 mils each; 10 source wires, 7 mils each; no source wires for EPA160AV.