APT20GT60BR
APT20GT60BR
600V
40A
Thunderbolt IGBT
TO-247
The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs.
Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior
ruggedness and ultrafast switching speed.
• Low Forward Voltage Drop
• High Freq. Switching to 150KHz
• Low Tail Current
• Ultra Low Leakage Current
• Avalanche Rated
• RBSOA and SCSOA Rated
MAXIMUM RATINGS
Symbol
C
G
C
E
G
E
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT20GT60BR
VCES
Collector-Emitter Voltage
600
VCGR
Collector-Gate Voltage (RGE = 20KW)
600
VEC
Emitter-Collector Voltage
VGE
Gate-Emitter Voltage
I C1
Continuous Collector Current @ TC = 25°C
40
I C2
Continuous Collector Current @ TC = 90°C
20
UNIT
Volts
15
±20
1
Amps
I CM
Pulsed Collector Current
I LM
RBSOA Clamped Inductive Load Current @ Rg = 11W TC = 125°C
40
EAS
Single Pulse Avalanche Energy
2
40
mJ
PD
Total Power Dissipation
175
Watts
TJ,TSTG
TL
80
@ TC = 25°C
-55 to 150
Operating and Storage Junction Temperature Range
°C
300
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVCES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA)
600
RBVCES
Collector-Emitter Reverse Breakdown Voltage (VGE = 0V, I C = 50mA)
-15
VGE(TH)
Gate Threshold Voltage
VCE(ON)
I CES
I GES
(VCE = VGE, I C = 500µA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, I C = IC2, Tj = 25°C)
TYP
MAX
UNIT
3
4
5
Volts
1.6
2.0
2.5
Collector-Emitter On Voltage (VGE = 15V, I C = IC2, Tj = 125°C)
2.8
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
40
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
1000
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
±100
µA
nA
RevC
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
3-2001
Characteristic / Test Conditions
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
052-6210
Symbol
APT20GT60BR
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Cies
Input Capacitance
C oes
Output Capacitance
Cres
Reverse Transfer Capacitance
Total Gate Charge
Q ge
Gate-Emitter Charge
Q gc
Gate-Collector ("Miller ") Charge
tr
td(off)
tf
td(on)
tr
td(off)
tf
MAX
Turn-on Delay Time
MIN
1045
1200
110
160
f = 1 MHz
65
110
Gate Charge
VGE = 15V
91
140
5.9
10
I C = I C2
40
60
Resistive Switching (25°C)
9.0
20
VGE = 15V
27
50
112
170
162
320
13
26
15
30
170
260
110
220
Capacitance
VGE = 0V
VCE = 25V
3
Qg
td(on)
TYP
Test Conditions
VCC = 0.5VCES
Rise Time
VCC = 0.5VCES
Turn-off Delay Time
I C = I C2
RG = 10W
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Inductive Switching (150°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
Fall Time
I C = I C2
Turn-on Switching Energy
R G = 10W
235
470
Eoff
Turn-off Switching Energy
TJ = +150°C
595
1190
Ets
Total Switching Losses
830
1660
12
20
16
30
129
190
E on
td(on)
tr
td(off)
Turn-on Delay Time
Rise Time
Inductive Switching (25°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
Turn-off Delay Time
I C = I C2
Fall Time
R G = 10W
45
90
Ets
Total Switching Losses
TJ = +25°C
575
1150
gfe
Forward Transconductance
tf
VCE = 20V, I C = I C2
4
UNIT
pF
nC
ns
ns
uJ
ns
uJ
S
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
RQJC
Junction to Case
RQJA
Junction to Ambient
WT
RevC
3-2001
Torque
052-6210
Characteristic
MIN
TYP
MAX
UNIT
0.72
°C/W
Package Weight
40
0.22
oz
6.1
gm
10
lb•in
1.1
N•m
Mounting Torque (using a 6-32 or 3mm Binding Head Machine Screw)
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
IC = IC2, VCC = 50V, RGE = 25W, L = 200µH, Tj = 25°C
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
APT20GT60BR
40
VGE=15, 10 & 9V
8V
30
20
7V
10
6V
5V
0
4
8
12
16
20
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 1, Typical Output Characteristics (TJ = 25°C)
IC, COLLECTOR CURRENT (AMPERES)
IC, COLLECTOR CURRENT (AMPERES)
40
0
20
7V
10
6V
5V
0
4
8
12
16
20
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 2, Typical Output Characteristics (T J = 150°C)
80
250µSec. Pulse Test
VGE = 15V
50
40
IC, COLLECTOR CURRENT (AMPERES)
IC, COLLECTOR CURRENT (AMPERES)
8V
30
0
60
TC=-55°C
TC =+25°C
TC=+150°C
30
20
10
0
C ies
1,000
500
f = 1MHz
C oes
100
C res
50
10
0.01
0.1
1.0
10
50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage
100µS
10
1mS
5
TC =+25°C
TJ =+150°C
SINGLE PULSE
10mS
1
5 10
50 100
600
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 4, Maximum Forward Safe Operating Area
VGE, GATE-TO-EMITTER VOLTAGE (VOLTS)
3,000
OPERATION
LIMITED
BY
VCE (SAT)
1
0
1
2
3
4
5
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 3, Typical Output Characteristics @ VGE = 15V
C, CAPACITANCE (pF)
VGE=15, 10 & 9V
20
IC = IC2
TJ = +25°C
V CE =120V
16
VCE =300V
12
V CE =480V
8
4
0
0
40
80
120
160
Qg, TOTAL GATE CHARGE (nC)
Figure 6, Gate Charges vs Gate-To-Emitter Voltage
0.5
D=0.5
0.1
0.1
0.2
0.05
0.02
Note:
0.01
3-2001
t1
t2
0.005
SINGLE PULSE
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10 -5
10 -4
10 -3
10 -2
10 -1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
RevC
0.01
052-6210
0.05
PDM
ZqJC, THERMAL IMPEDANCE (°C/W)
1.0
APT20GT60BR
40
IC, COLLECTOR CURRENT (AMPERES)
VCE(SAT), COLLECTOR-TO-EMITTER
SATURATION VOLTAGE (VOLTS)
4.0
3.5
IC1
3.0
2.5
IC2
2.0
0.5 IC2
1.5
1.0
10
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
Figure 9, Maximum Collector Current vs Case Temperature
25
1.0
1.2
SWITCHING ENERGY LOSSES (mJ)
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN
VOLTAGE (NORMALIZED)
20
0
-50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 8, Typical VCE(SAT) Voltage vs Junction Temperature
1.1
1
0.9
0.8
0.7
-50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 10, Breakdown Voltage vs Junction Temperature
VCC = 0.66 VCES
VGE = +15V
TJ = +25°C
IC = IC2
0.8
E off
0.6
0.4
E on
0.2
0
20
40
60
80
100
RG, GATE RESISTANCE (OHMS)
Figure 11, Typical Switching Energy Losses vs Gate Resistance
2.0
0
.6
SWITCHING ENERGY LOSSES (mJ)
TOTAL SWITCHING ENERGY LOSSES (mJ)
30
IC1
1.0
IC2
0.5 IC2
VCC = 0.66 VCES
VGE = +15V
RG = 10 W
0.1
-50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 12, Typical Switching Energy Losses vs. Junction Temperature
VCC = 0.66 VCES
VGE = +15V
TJ = +125°C
RG = 10 W
.5
.4
E off
.3
.2
E on
.1
0
0
10
20
30
IC, COLLECTOR CURRENT (AMPERES)
Figure 13, Typical Switching Energy Losses vs Collector Current
IC, COLLECTOR CURRENT (AMPERES)
RevC
3-2001
100
For Both:
Duty Cycle = 50%
TJ = +125°C
Tsink = +90°C
Gate drive as specified
Power dissapation = 49W
ILOAD = IRMS of fundamental
10
1
052-6210
0.1
1.0
10
F, FREQUENCY (KHz)
Figure 14,Typical Load Current vs Frequency
100
1000
APT20GT60BR
VCHARGE
*DRIVER SAME TYPE AS D.U.T.
VCC = 0.66 VCES
Et s = E on + E off
A
A
90%
VC
B
10%
B
t d (on)
t d(off)
IC
VC
IC
100uH
90%
D.U.T.
VCE (SAT)
tr
VC
A
D.U.T.
DRIVER*
10%
IC
RG
V CLAMP
90%
10%
tf
E on
t=2uS
E off
Figure 15, Switching Loss Test Circuit and Waveforms
2
VCE(off)
VGE(on)
V CC
90%
.5 VCES
RL =
I C2
2
D.U.T.
10%
1
From
Gate Drive
Circuitry
VCE(on)
VGE(off)
t d (on)
tr
t d(off)
RG
1
tf
Figure 16, Resistive Switching Time Test Circuit and Waveforms
T0-247 Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
Collector
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
Gate
Collector
Emitter
RevC
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents:
4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
3-2001
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
5,019,522
5,434,095
5,262,336
5,528,058
052-6210
0.40 (.016)
0.79 (.031)