APM7313K Dual N-Channel Enhancement Mode MOSFET Pin Description Features • 30V/6A, RDS(ON) =21mΩ(typ.) @ VGS = 10V RDS(ON) =27mΩ(typ.) @ VGS = 4.5V • • • Super High Dense Cell Design Reliable and Rugged Top View of SOP − 8 Lead Free Available (RoHS Compliant) (8) D1 Applications • (7) D1 (6) D2 (5) D2 Power Management in Notebook Computer, (2) G1 Portable Equipment and Battery Powered (4) G2 Systems S1 (1) S2 (3) N-Channel MOSFET Ordering and Marking Information Package Code K : SOP-8 Operating Junction Temp. Range C : -55 to 150 °C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device APM7313 Lead Free Code Handling Code Temp. Range Package Code APM7313 K : APM7313 XXXXX XXXXX - Date Code No te : ANPEC le ad -free produ cts con tai n m ol din g com pou nd s/d ie attach material s and 10 0% ma tte i n p la te te rmin atio n fi nish ; wh ich are full y compl iant with Ro HS and compa tibl e wi th both SnPb an d le ad-free sold ieri ng op era tio ns. AN PEC le ad-free produ cts me et or exceed th e l ead -free req uireme nts of IPC /JEDEC J STD -02 0C fo r MSL classi ficati on at lea d-fre e p eak re flo w temp era ture. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. C opyright ANPEC Electronics C orp. Rev. B.3 - Nov., 2005 1 www.anpec.com.tw APM7313K Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 ID* Continuous Drain Current IDM* I S* 300µs Pulsed Drain Current Diode Continuous Forward Current TJ Maximum Junction Temperature Unit V 6 VGS=10V A 24 3 A 150 TSTG Storage Temperature Range PD* Maximum Power Dissipation RθJA* Thermal Resistance-Junction to Ambient °C -55 to 150 TA=25°C 2 TA=100°C 0.8 W 62.5 °C/W Note: *Surface Mounted on 1in2 pad area, t ≤ 10sec. Electrical Characteristics Symbol (TA = 25°C unless otherwise noted) Parameter Test Condition APM7313K Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS R DS(ON) VSD a a VGS=0V, I DS=250µA Gate Leakage Current VGS=±20V, VDS=0V Gate Charge Characteristics Qg Total Gate Charge 1 T A=25°C VDS=VGS, IDS=250µA Diode Forward Voltage V VDS=20V, VGS=0V Gate Threshold Voltage Drain-Source On-state Resistance 30 30 1 1.5 µA 2 V ±100 nA VGS=10V, ID S=6A 21 28 VGS=4.5V, I DS=2A 27 42 ISD=2A, VGS=0V 0.7 1.3 19 25 mΩ V b Qgs Gate-Source Charge Qgd Gate-Drain Charge C opyright ANPEC Electronics C orp. Rev. B.3 - Nov., 2005 VDS=15V, VGS=10V, IDS=6A 1.6 nC 3.6 2 www.anpec.com.tw APM7313K Electrical Characteristics (Cont.) Symbol Parameter (TA = 25°C unless otherwise noted) Test Condition APM7313K Min. Typ. Max. Unit b Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf VGS=0V,VD S=0V,F=1MHz VGS=0V, VDS=25V, Frequency=1.0MHz VDD =15V, RL=15Ω, IDS=1A, VGEN=10V, R G=6Ω Turn-off Fall Time Ω 2.1 835 pF 150 105 7 13 8 15 28 40 6 9 ns Notes: a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. C opyright ANPEC Electronics C orp. Rev. B.3 - Nov., 2005 3 www.anpec.com.tw APM7313K Typical Characteristics Power Dissipation Drain Curre nt 2.5 8 ID - Drain Current (A) Ptot - Power (W) 2.0 1.5 1.0 6 4 2 0.5 o 0.0 o TA=25 C 0 20 40 60 0 80 100 120 140 160 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance Normalized Transient Thermal Resistance Lim it 10 1ms Rd s(o n) ID - Drain Current (A) 0 Tj - Junction Temperature (°C) 100 10ms 1 100ms 1s 0.1 DC o T A=25 C 0.01 0.01 TA=25 C,VG=10V 0.1 1 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 2 1E-3 1E-4 100 VDS - Drain - Source Voltage (V) C opyright ANPEC Electronics C orp. Rev. B.3 - Nov., 2005 2 Mounted on 1in pad o Rθ JA : 62.5 C/W 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) 4 www.anpec.com.tw APM7313K Typical Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 30 40 VGS= 4, 5, 6, 7, 8, 9, 10V RDS(ON) - On - Resistance (mΩ) ID - Drain Current (A) 36 3.5V 25 20 15 3V 10 5 2.5V VGS= 4.5V 32 28 24 VGS= 10V 20 16 12 0 0 1 2 3 4 5 0 4 VDS - Drain-Sourc e Voltage (V) 1.75 Normalized Threshold Voltage 25 20 15 o Tj =125 C 10 o Tj=-55 C o Tj =25 C 16 20 24 Gate Threshold Voltage 30 ID - Drain Current (A) 12 ID - Drain Current (A) Transfer Characteristics 5 0 8 IDS= 250µΑ 1.50 1.25 1.00 0.75 0.50 0.25 0 1 2 3 4 0.00 -50 -25 5 VGS - Gate - Source Voltage (V) C opyright ANPEC Electronics C orp. Rev. B.3 - Nov., 2005 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 5 www.anpec.com.tw APM7313K Typical Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 30 1.6 IDS = 6A 1.4 10 IS - Source Current (A) Normalized On Resistance V GS = 10V 1.2 1.0 0.8 o Tj=125 C o Tj=25 C 1 0.6 o 0.4 -50 RON@Tj =25 C: 21m Ω -25 0 25 50 75 0.1 0.0 100 125 150 Tj - Junction Temperature (°C) 0.2 0.4 0.8 1.0 1.2 1.4 VSD - Source - Drain Voltage (V) Capacitance Gate Charge 1400 10 Frequency=1MHz VDS= 15V ID= 6A VGS - Gate - source Voltage (V) 1200 C - Capacitance (pF) 0.6 1000 Ciss 800 600 400 Coss 200 8 6 4 2 Crss 0 0 0 5 10 15 20 25 30 4 8 12 16 20 QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) C opyright ANPEC Electronics C orp. Rev. B.3 - Nov., 2005 0 6 www.anpec.com.tw APM7313K Packaging Information E e1 0.015X45 SOP-8 pin ( Reference JE DEC Registrat ion MS-012) H e2 D A1 A 1 L 0.004max. Dim Millimeters Inches Min. Max. Min. Max. A A1 1.35 0.10 1.75 0.25 0.053 0.004 0.069 0.010 D 4.80 5.00 0.189 0.197 E 3.80 4.00 0.150 0.157 H 5.80 6.20 0.228 0.244 L 0.40 1.27 0.016 0.050 e1 0.33 0.51 0.013 0.020 e2 1.27BSC 0.50BSC φ1 8° 8° C opyright ANPEC Electronics C orp. Rev. B.3 - Nov., 2005 7 www.anpec.com.tw APM7313K Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) tp TP Critical Zone T L to T P Ramp-up Temperature TL tL Tsmax Tsmin Ramp-down ts Preheat 25 ° t 25 C to Peak Time Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate 3°C/second max. 3°C/second max. (TL to T P) Preheat 100°C 150°C - Temperature Min (Tsmin) °C 150 200°C - Temperature Max (Tsmax) 60-120 seconds 60-180 seconds - Time (min to max) (ts) Time maintained above: 183°C 217°C - Temperature (TL) 60-150 seconds 60-150 seconds - Time (t L) Peak/Classificatioon Temperature (Tp) See table 1 See table 2 ° Time within 5 C of actual 10-30 seconds 20-40 seconds Peak Temperature (tp) Ramp-down Rate 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25 °C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. C opyright ANPEC Electronics C orp. Rev. B.3 - Nov., 2005 8 www.anpec.com.tw APM7313K Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process – Package Peak Reflow Temperatures 3 3 Package Thickness Volume mm Volume mm <350 ≥ 350 <2.5 mm 240 +0/-5 °C 225 +0/- 5 ° C ≥ 2.5 mm 225 +0/-5 °C 225 +0/- 5 ° C Table 2. Pb-free Process – Package Classification Reflow Temperatures 3 3 3 Package Thickness Volume mm Volume mm Volume mm <350 350 -2000 >2000 <1.6 mm 260 +0 ° C * 260 +0° C* 260 +0 ° C * 1.6 mm – 2.5 mm 260 +0 ° C * 250 +0° C* 245 +0 ° C * ≥ 2.5 mm 250 +0 ° C * 245 +0° C* 245 +0 ° C * *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0 °C. For example 260 ° C+0 °C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E P Po D P1 Bo F W Ao C opyright ANPEC Electronics C orp. Rev. B.3 - Nov., 2005 D1 9 Ko www.anpec.com.tw APM7313K Carrier Tape & Reel Dimensions(Cont.) T2 J C A B T1 Application A 330±1 SOP-8 F 5.5 ± 0.1 B 62 ± 1.5 C 12.75 + 0.1 5 J 2 + 0.5 D D1 Po 1.55+ 0.25 1.55±0.1 4.0 ± 0.1 T1 12.4 +0.2 T2 2± 0.2 W 12 + 0.3 - 0.1 P1 2.0 ± 0.1 Ao 6.4 ± 0.1 Bo 5.2± 0.1 P 8± 0.1 E 1.75± 0.1 Ko t 2.1± 0.1 0.3±0.013 (mm) Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 C opyright ANPEC Electronics C orp. Rev. B.3 - Nov., 2005 10 www.anpec.com.tw