Preliminary Datasheet 2A DDR TERMINATION REGULATOR AP2302L General Description Features The AP2302L linear regulator is designed to meet the JEDEC specification SSTL-2 and SSTL-18 for termination of DDR-SDRAM. The regulator can sink or source up to 2A current continuously, providing enough current for most DDR applications. VOUT is designed to track the VREF voltage within a ± 20mV tolerance over the entire current range while preventing shooting through on the output stage. On-chip thermal limiting provides protection against a combination of high current and ambient temperature which would create an excessive junction temperature. · Support Both DDR I (1.25VTT) and DDR II (0.9VTT) Requirements · · · Source and Sink Current up to 2A High Accuracy Output Voltage at Full-load Adjustable VOUT by External Resistors · Shutdown for Standby or Suspend Mode Operation with High-impedance Output Applications The AP2302L, used in conjunction with series termination resistors, provides an excellent voltage source for active termination schemes of high speed transmission lines as those seen in high speed memory buses and distributed backplane designs. · · · DDR-SDRAM Termination DDR-II Termination SSTL-2 Termination The AP2302L is available in SOIC-8 and TO-252-5 packages. TO-252-5 SOIC-8 Figure 1. Package Types of AP2302L Nov. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 1 Preliminary Datasheet 2A DDR TERMINATION REGULATOR AP2302L Pin Configuration M Package (SOIC-8) D Package (TO-252-5) VIN 1 8 VCNTL GND 2 7 VCNTL REFEN 3 6 VCNTL VOUT 4 5 VCNTL 5 4 3 2 1 VOUT REFEN VCNTL (TAB) GND VIN Figure 2. Pin Configuration of AP2302L (Top View) Pin Description Pin Number Pin Name Function SOIC-8 TO-252-5 1 1 VIN 2 2 GND 3 4 REFEN 4 5 VOUT Output Voltage. 5, 6, 7, 8 3 VCNTL Supply Voltage for Internal Circuit (Internally Connected for SOIC-8), (TAB for TO-252-5). Power Input. Ground. Reference Voltage Input and Chip Enable. Nov. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 2 Preliminary Datasheet 2A DDR TERMINATION REGULATOR AP2302L Functional Block Diagram VIN VCNTL(TAB) 1 (1) 5,6,7,8 (3) CURRENT LIMIT A(B) A for SOIC-8 B for TO-252-5 BANDGAP REFEN OUTPUT CONTROL 3 (4) 4 (5) VOUT START UP 2 (2) THERMAL PROTECT GND Figure 3. Functional Block Diagram of AP2302L Ordering Information AP2302L E1: Lead Free Blank: Tin Lead Circuit Type Package M: SOIC-8 D: TO-252-5 Package SOIC-8 TO-252-5 Temperature Range TR: Tape and Reel Blank: Tube Part Number Tin Lead Lead Free Marking ID Tin Lead Packing Type Lead Free AP2302LM-E1 2302LM-E1 Tube AP2302LMTR-E1 2302LM-E1 Tape ＆ Reel AP2302LD-E1 AP2302LD-E1 Tube AP2302LDTR-E1 AP2302LD-E1 Tape ＆ Reel 0 to 125oC 0 to 125oC BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Nov. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 3 Preliminary Datasheet 2A DDR TERMINATION REGULATOR AP2302L Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Supply Voltage for Internal Circuit VCNTL 7 V PD Internally Limited W ESD (Human Body Model) ESD 2 KV Storage Temperature Range TSTG -65 to 150 TLEAD 260 Power Dissipation Lead Temperature (Soldering, 5sec) C oC SOIC-8 θJC Package Thermal Resistance (Free Air) o 28 oC/W TO-252-5 13 Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Symbol Min VCNTL (Note 2, 3) Supply Voltage for Internal Circuit Typ Max Unit 3.3 6 V VCNTL V 2.5 DDR I VIN Power Input 1.6 DDR II 1.8 TJ Junction Temperature 0 125 o C Note 2: Keep VCNTL ≥ VIN in operation power on and power off sequences. Note 3: For safe operation, VCNTL MUST be tied to 3.3V rather than 5V. Nov. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 4 Preliminary Datasheet 2A DDR TERMINATION REGULATOR AP2302L Electrical Characteristics (TA=25oC, VIN=2.5V, VCNTL=3.3V, VREFEN=1.25V, COUT=10µF (Ceramic), unless otherwise specified.) Parameter Symbol Output Offset Voltage VOS ∆VOUT DDR II Quiescent Current of VCNTL Leakage Current in Shutdown Mode Min Typ Max Unit -20 0 20 mV -20 0 20 IL=0 to 2A DDR I Load Regulation Conditions ΙL=0Α (Note 4) IL=0 to -2A mV IL=0 to 2A -20 IL=0 to -2A IQ ISHDN 0 20 No Load 3 5 mA VREFEN<0.2V, RL=180Ω 3 6 µA Protection Current Limit ILIMIT Thermal Shutdown Temperature TSHDN 2.6 3.3V ≤VCNTL ≤5V Thermal Shutdown Hysteresis A 150 oC 50 oC Shutdown Function Shutdown Threshold Trigger Output=High 0.8 Output=Low 0.2 V Note 4: VOS is the voltage measurement defined as VOUT subtracted from VREFEN. Nov. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 5 Preliminary Datasheet 2A DDR TERMINATION REGULATOR AP2302L Typical Performance Characteristics 6 Sinking Current (A) Sourcing Current (A) 6 4 VCNTL=3.3V 2 -40 -20 0 20 40 60 4 VCNTL=3.3V VIN=2.5V VIN=2.5V VOUT=1.25V VOUT=1.25V 80 100 2 -40 120 -20 0 Figure 4. Sourcing Current vs. Ambient Temperature 60 80 100 120 Figure 5. Sinking Current vs. Ambient Temperature 650 650 Threshold Voltage (mV) Threshold Voltage (mV) 40 Ambient Temperature ( C) Ambient Temperature ( C) 600 550 VCNTL=3.3V VIN=2.5V 500 -40 20 o o -20 0 20 40 60 80 100 600 550 VCNTL=5.0V VIN=2.5V 500 -40 120 o -20 0 20 40 60 80 100 120 o Ambient Temperature ( C) Ambient Temperature ( C) Figure 7. Threshold Voltage vs. Ambient Temperature Figure 6. Threshold Voltage vs. Ambient Temperature Nov. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 6 Preliminary Datasheet 2A DDR TERMINATION REGULATOR AP2302L Output Transient Voltage 20mV 20mV -20mV Output Current -20mV Output Current Output Transient Voltage Typical Performance Characteristics (Continued) 2A -2A 2A -2A Time (µs) Time (µs) Figure 8. 0.9VTT at 2A Transient Response Figure 9. 1.25VTT at 2A Transient Response 0.30 0.30 VIN=0.9V VIN=0.9V VIN=0.85V 0.28 VIN=0.8V VIN=0.8V 0.26 RDS(ON) ( Ω) RDS(ON) (Ω) 0.26 VIN=0.85V 0.28 0.24 0.22 0.24 0.22 0.20 0.20 VCNTL=3.3V 0.18 50 75 100 VREFEN=1.0V 0.16 0.16 25 VCNTL=5V 0.18 VREFEN=1.0V 25 125 50 75 100 125 o o Ambient Temperature ( C) Ambient Temperature ( C) Figure 10. RDS(on) vs. Ambient Temperature Figure 11. RDS(on) vs. Ambient Temperature Nov. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 7 Preliminary Datasheet 2A DDR TERMINATION REGULATOR AP2302L Typical Performance Characteristics (Continued) o 350 350 TA=25 C o TA=25 C o TA=50 C TA=65 C o TA=65 C 2 Copper Area (mm ) 2 Copper Area (mm ) o 300 o 300 TA=50 C 250 200 150 250 200 150 100 100 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 6.0 8.0 Power Dissipation (W) 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 Power Dissipation (W) Figure 12. Copper Area vs. Power Dissipation (For SOIC-8) Figure 13. Copper Area vs. Power Dissipation (For TO-252-5) Nov. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 8 Preliminary Datasheet 2A DDR TERMINATION REGULATOR AP2302L Typical Application VCNTL = 3.3V VIN = 2.5V VIN R1 REFEN EN RTT CCNTL VCNTL AP2302L CIN VOUT GND R2 CSS COUT RDUMMY Figure 14. Typical Application of AP2302L R1 = R2 = 100KΩ, RTT = 50Ω / 33Ω / 25Ω RDUMMY = 1KΩ, as for VOUT discharge when VIN is not present but VCNTL is present CSS = 1µF, CIN = 470µF, CCNTL = 47µF, COUT =470µF Nov. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 9 Preliminary Datasheet 2A DDR TERMINATION REGULATOR AP2302L Mechanical Dimensions SOIC-8 Unit: mm(inch) 4.800(0.189) 5.000(0.197) 7° 0.320(0.013) 1.350(0.053) 1.750(0.069) 8° 8° 7° 0.675(0.027) 0.725(0.029) D 5.800(0.228) 1.270(0.050) 6.200(0.244) TYP D 20:1 0.300(0.012) R0.150(0.006) 0.100(0.004) φ 0.800(0.031) 0.200(0.008) 0° 8° 1.000(0.039) 3.800(0.150) 4.000(0.157) 1° 5° 0.330(0.013) 0.510(0.020) 0.900(0.035) R0.150(0.006) 0.190(0.007) 0.250(0.010) Nov. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 10 Preliminary Datasheet 2A DDR TERMINATION REGULATOR AP2302L Mechanical Dimensions (Continued) TO-252-5 2.200(0.087) 2.400(0.094) 6.350(0.250) 6.650(0.262) 5.200(0.205) 5.400(0.213) 9.500(0.374) 9.900(0.390) Unit: mm(inch) 0.430(0.017) 0.580(0.023) 5.400(0.213) 5.700(0.224) 3.800(0.150) REF 0.000(0.000) 0.127(0.005) 2.550(0.100) 2.900(0.114) 1.270(0.050) TYP 2.540(0.100) TYP 0.400(0.016) 0.600(0.024) 0.430(0.017) 0.580(0.023) 1.400(0.055) 1.780(0.070) Nov. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 11 http://www.bcdsemi.com IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. 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