Suntac IRF2N60-220 Power mosfet Datasheet

IRF2N60
POWER MOSFET
GENERAL DESCRIPTION
FEATURES
This high voltage MOSFET uses an advanced termination
‹ Robust High Voltage Termination
scheme to provide enhanced voltage-blocking capability
‹ Avalanche Energy Specified
without degrading performance over time. In addition, this
‹ Source-to-Drain Diode Recovery Time Comparable to a
advanced MOSFET is designed to withstand high energy in
Discrete Fast Recovery Diode
avalanche and commutation modes. The new energy
‹ Diode is Characterized for Use in Bridge Circuits
efficient design also offers a drain-to-source diode with a
‹ IDSS and VDS(on) Specified at Elevated Temperature
fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
PIN CONFIGURATION
SYMBOL
TO-220/TO-220FP
TO-252
TO-251
Front View
Front View
Front View
N-Channel MOSFET
SOURCE
DRAIN
GATE
SO URC E
DR AIN
G ATE
SO URCE
DRAIN
G ATE
D
G
1
1
2
2
3
1
2
3
S
3
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current Ё Continuous
Ё Pulsed
Gate-to-Source Voltage Ё Continue
Ё Non-repetitive
Total Power Dissipation
Symbol
Value
Unit
ID
2.0
A
IDM
9.0
VGS
±20
VGSM
±40
PD
60
TO-220
60
TO-220FP
32
Single Pulse Drain-to-Source Avalanche Energy Ё TJ = 25к
V
W
TO-251/TO-252
Operating and Storage Temperature Range
V
TJ, TSTG
-55 to 150
к
EAS
20
mJ
șJC
1.0
к/W
șJA
62.5
TL
260
(VDD = 100V, VGS = 10V, IL = 2A, L = 10mH, RG = 25ȍ)
Thermal Resistance Ё Junction to Case
Ё Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
к
Page 1
IRF2N60
!
POWER MOSFET
ORDERING INFORMATION
Part Number
Package
IRF2N60-251..........................................TO-251
.................IRF2N60-252..........................................TO-252
.................IRF2N60-220..........................................TO-220
.................IRF2N60-220FP
TO-220 Full Package
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25к.
IRF2N60
Characteristic
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250 ӴA)
Symbol
Min
V(BR)DSS
600
Typ
Max
Units
V
mA
Drain-Source Leakage Current
(VDS = 600 V, VGS = 0 V)
(VDS = 480 V, VGS = 0 V, TJ = 125к)
IDSS
Gate-Source Leakage Current-Forward
(Vgsf = 20 V, VDS = 0 V)
IGSSF
100
nA
Gate-Source Leakage Current-Reverse
(Vgsr = 20 V, VDS = 0 V)
IGSSR
100
nA
Gate Threshold Voltage
(VDS = VGS, ID = 250 ӴA)
VGS(th)
4.0
V
Static Drain-Source On-Resistance (VGS = 10 V, ID = 1.2A) *
RDS(on)
0.1
1.0
Forward Transconductance (VDS Њ 50 V, ID = 1.0A) *
gFS
Input Capacitance
Ciss
2.0
4.4
1.4
ȍ
mhos
Coss
56
pF
pF
Crss
9.2
pF
td(on)
12
tr
21
ns
ns
td(off)
30
ns
tf
24
Qg
13
Qgs
2.0
nC
nC
Qgd
6.0
nC
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
LD
4.5
nH
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
LS
7.5
nH
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDD = 300 V, ID = 2.0 A,
VGS = 10 V,
RG = 18ȍ) *
(VDS = 400 V, ID = 2.0 A,
VGS = 10 V)*
435
ns
22
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
(IS = 2.0 A, VGS = 0 V,
dIS/dt = 100A/µs)
VSD
1.5
V
ton
**
ns
trr
340
ns
* Pulse Test: Pulse Width Љ300µs, Duty Cycle Љ2%
** Negligible, Dominated by circuit inductance
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IRF2N60
POWER MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS
Page 3
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