Eudyna FLL400IP-2 L-band medium & high power gaas fet Datasheet

FLL400IP-2
L-Band Medium & High Power GaAs FET
FEATURES
•
•
•
•
•
Push-Pull Configuration
High Power Output: 35W (Typ.)
High PAE: 44% (Typ.)
Broad Frequency Range: 800 to 2000 MHz.
Suitable for class A operation at 10V
and class AB operation at 12V
DESCRIPTION
The FLL400IP-2 is a 35 Watt GaAs FET that employs a push-pull design which
offers ease of matching, greater consistency and a broader bandwidth for high
power L-band amplifiers. This product is targeted to reduce the size and complexity
of highly linear, high power base station transmitting amplifiers. This new product is
uniquely suited for use in PCS/PCN base station amplifiers as it offers high gain,
long term reliability and ease of use.
APPLICATIONS
• Solid State Base-Station Power Amplifier.
• PCS/PCN Communication Systems.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Parameter
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
107
W
Tc = 25°C
Total Power Dissipation
PT
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
+175
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 12 volts.
2. The forward and reverse gate currents should not exceed 54.4 and -17.4 mA respectively with
gate resistance of 25Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Conditions
Min.
Limits
Typ. Max.
Unit
Drain Current
IDSS
VDS = 5V, VGS=0V
-
12
16
A
Transconductance
gm
VDS = 5V, IDS=7.2A
-
6000
-
mS
Pinch-Off Voltage
Vp
VDS = 5V, IDS=720mA
-1.0
-2.0
-3.5
V
-5
-
-
V
44.5
45.5
-
dBm
9.0
10.0
-
dB
-
6.0
8.0
A
-
44
-
%
-
44.5
-
dBm
-
10.0
-
dB
-
1.0
1.4
°C/W
Gate-Source Breakdown Voltage
VGSO
Output Power at 1 dB G.C.P.
P1dB
Power Gain at 1 dB G.C.P.
G1dB
Drain Current
IDSR
Power-Added Efficiency
ηadd
Output Power at 1 dB G.C.P.
P1dB
Power Gain at 1 dB G.C.P.
G1dB
VDS = 10V
f=1.96GHz
IDS = 2A
Thermal Resistance
Rth
Channel to Case
IGS = -720µA
VDS = 12V
f=1.96GHz
IDS = 2A
CASE STYLE: IP
Edition 1.6
December 1999
G.C.P.: Gain Compression Point
1
FLL400IP-2
L-Band Medium & High Power GaAs FET
OUTPUT POWER & ηadd vs. INPUT POWER
POWER DERATING CURVE
120
46
VDS = 12V
IDS = 2A
f = 1.96GHz
45
44
80
60
40
42
41
Pout
40
39
50
38
40
37
36
30
ηadd
35
34
33
20
32
20
10
31
30
0
50
100
150
19
200
21
23
25
OUTPUT POWER vs. FREQUENCY
46
29
31
Input Power (dBm)
Case Temperature (°C)
47
27
VDS = 12V
IDS = 2A
Pin=37dBm
45
44
43
42
30dBm
41
40
39
38
37
25dBm
36
35
34
33
32
20dBm
31
30
1.8
1.85
1.9
1.95
Frequency (GHz)
2
2.0
33
35
37
0
ηadd (%)
Output Power (dBm)
43
Output Power (dBm)
Total Power Dissipation (W)
100
FLL400IP-2
L-Band Medium & High Power GaAs FET
IMD (dBc)
OUTPUT POWER vs. IMD
-12
-14
-16
-18
-20
-22
-24
-26
-28
-30
-32
-34
-36
-38
-40
-42
-44
-46
-48
-50
-52
-54
-56
-58
-60
VDS = 12V
IDS = 2A
f = 1.96GHz
∆f = +5.0MHz
IM3
IM5
26
28
30
32
34
36
38
40
42
44
Total Output Power (dBm)
IMD (dBc)
OUTPUT POWER vs. IMD
-20
-22
-24
-26
-28
-30
-32
-34
-36
-38
-40
-42
-44
-46
-48
-50
-52
-54
-56
-58
-60
VDS = 10V
IDS = 5A
f = 1.96GHz
∆f = +5MHz
IM3
IM5
27
28
29
30
31
32
33
34
35
36
37
Total Output Power (dBm)
3
38
39
40
41
42
43
FLL400IP-2
L-Band Medium & High Power GaAs FET
Case Style "IP"
Metal-Ceramic Hermetic Package
2-1
(0.039)
3
6
5
(0.197)
4
2-1.4
(0.055)
1.9
(0.075)
13.8±0.2
(0.543)
13.3
(0.523)
5.5MAX
(0.217)
5
2-R1.3±0.2
(0.051)
9.8±0.2
(0.386)
2
2.6±0.2
(0.102)
1
3.0±0.5 MIN.
(0.118)
45°
2.4
(0.094)
0.1+0.05
-0.01
(0.039)
8.2
(0.332)
3.0±0.5 MIN.
(0.118)
22±0.2
(0.866)
18.6±0.2
(0.732)
1, 2: Gate
3, 6: Source
4, 5: Drain
Unit: mm (inches)
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS EUROPE, GmbH
Quantum Devices Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0799M200
4
Similar pages