HER3003PT thru HER3006PT ® Pb HER3003PT thru HER3006PT Pb Free Plating Product 30.0 Ampere Dual Common Cathode High Efficiency Rectifier Diode TO-3P/TO-247AD Unit: inch (mm) Features .839(21.3) .819(20.8) .798(20.25) .777(19.75) .126(3.2) .110(2.8) .050(1.25) .045(1.15) .030(0.75) .017(0.45) Cases: TO-3P/TO-247AD molded plastic Terminals: Pure tin plated, lead free solderable per MIL-STD-750. Method 2026 Polarity: As marked Mounting position: Any Mounting torque: 10in-lbs. Max. Weight: 0.2 ounce, 5.6 gram approximately .600(15.25) .580(14.75) .095(2.4) Mechanical Data .199(5.05) .175(4.45) .142(3.6) .125(3.2) .170(4.3) .145(3.7) .640(16.25) .620(15.75) Dual rectifier construction, positive center-tap Plastic package has Underwriters Laboratory Flammability Classification 94V0 Glass passivated chip junctions Special for inverter/high power motor control Low forward voltage, high current capability Low thermal resistance Low power loss, high efficiency High temperature soldering guaranteed: o 260 C, 0.16”(4.06mm)from case for 10 seconds .087(2.2) .070(1.8) .225(5.7) .204(5.2) .225(5.7) .204(5.2) Positive Common Cathode Suffix "PT" Negative Common Anode Suffix "PA" Doubler Series Connection Suffix "PD" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL HER3003PT HER3003PA HER3003PD HER3005PT HER3005PA HER3005PD HER3006PT HER3006PA HER3006PD UNIT Maximum Recurrent Peak Reverse Voltage VRRM 200 400 600 V Maximum RMS Voltage VRMS 140 280 420 V VDC 200 400 600 V Maximum DC Blocking Voltage Maximum Average Forward Rectified o Current TC=125 C IF(AV) 30.0 A IFSM 300 A Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage @ 15.0 A VF 0.98 1.3 o Maximum DC Reverse Current @TJ=25 C o At Rated DC Blocking Voltage @TJ=125 C IR 1.7 V 10 uA 500 uA Maximum Reverse Recovery Time (Note 1) Trr 50 60 nS Typical junction Capacitance (Note 2) CJ 175 145 pF Operating Junction and Storage Temperature Range TJ, TSTG -55 to +150 o C NOTES : (1) Reverse recovery test conditions IF = 0.5A IR = 1. 0A Irr = 0.25A. (2) Thermal Resistance junction to terminal. (3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. Rev.02 © 2006 Thinki Semiconductor Co.,Ltd. Page 1/2 http://www.thinkisemi.com/ HER3003PT thru HER3006PT ® FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT FIG.1 - FORWARD CURRENT DERATING CURVE 300 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 30 25 20 15 10 5 60 Hz Resistive or Inductive load 0 Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) 250 200 150 100 50 0 0 50 100 150 1 FIG.4 - TYPICAL REVERSE CHARACTERISTICS FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 100 INSTANTANEOUS REVERSE CURRENT, MICROAMPERES 150 HER3005PT HER3003PT 15 HER3006PT 1.0 o TJ=25 C PULSE WIDTH=300uS 1% DUTY CYCLE 0.1 0.2 0.4 0.6 0.8 1.0 1.2 100 NUMBER OF CYCLES AT 60Hz o LEAD TEMPERATURE, C IINSTANTANEOUS FORWARD CURRENT, AMPERES 10 1.4 o TJ=125 C 10 1 0.1 o TJ=25 C 0.01 1.6 0 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,% FIG.5 - TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, pF 1000 o TJ = 25 C f = 1.0 MHZ Vsig = 50mVp-p 100 10 0.1 1.0 4.0 10 100 REVERSE VOLTAGE, VOLTS . Rev.02 © 2006 Thinki Semiconductor Co.,Ltd. . . Page 2/2 http://www.thinkisemi.com/