MMSZ4678ET1 Series Zener Voltage Regulators 500 mW SOD−123 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD−123 package. These devices provide a convenient alternative to the leadless 34−package style. http://onsemi.com Features • • • • • • • 500 mW Rating on FR−4 or FR−5 Board Wide Zener Reverse Voltage Range − 1.8 V to 43 V Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications ESD Rating of Class 3 (>16 kV) per Human Body Model Peak Power − 225 W (8 x 20 ms) Pb−Free Packages are Available 1 Cathode 2 Anode SOD−123 CASE 425 STYLE 1 2 Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 1 MARKING DIAGRAM 260°C for 10 Seconds POLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V−0 1 xxx M G G MAXIMUM RATINGS Rating Symbol Max Unit Peak Power Dissipation @ 20 ms (Note 1) @ TL ≤ 25°C Ppk 225 W Total Power Dissipation on FR−5 Board, (Note 2) @ TL = 75°C Derated above 75°C PD 500 6.7 mW mW/°C 340 °C/W Thermal Resistance, (Note 3) Junction−to−Ambient RqJA Thermal Resistance, (Note 3) Junction−to−Lead RqJL 150 °C/W TJ, Tstg −55 to +150 °C Junction and Storage Temperature Range Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse per Figure 11. 2. FR−5 = 3.5 x 1.5 inches, using the minimum recommended footprint. 3. Thermal Resistance measurement obtained via infrared Scan Method. xxx = Device Code (Refer to page 2) M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping † MMSZ4xxxET1 SOD−123 3000/Tape & Reel MMSZ4xxxET1G SOD−123 (Pb−Free) 3000/Tape & Reel MMSZ4xxxET3 SOD−123 10000/Tape & Reel MMSZ4xxxET3G SOD−123 (Pb−Free) 10000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics table on page 2 of this data sheet. Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2005 August, 2005 − Rev. 4 1 Publication Order Number: MMSZ4678ET1/D MMSZ4678ET1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.95 V Max. @ IF = 10 mA) Symbol I IF Parameter VZ Reverse Zener Voltage @ IZT IZT Reverse Current IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF VZ VR V IR VF IZT Zener Voltage Regulator ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA) Zener Voltage (Note 1) VZ (V) Leakage Current @ IZT I R @ VR Device Marking Min Nom Max mA mA V MMSZ4684ET1 CG3 3.13 3.3 3.47 50 7.5 1.5 MMSZ4688ET1, G CG7 4.47 4.7 4.94 50 10 3 MMSZ4689ET1, G CG8 4.85 5.1 5.36 50 10 3 MMSZ4690ET1 CG9 5.32 5.6 5.88 50 10 4 MMSZ4691ET1 CH1 5.89 6.2 6.51 50 10 5 MMSZ4692ET1 CH2 6.46 6.8 7.14 50 10 5.1 MMSZ4693ET1 CH3 7.13 7.5 7.88 50 10 5.7 MMSZ4697ET1 CH7 9.50 10 10.50 50 1 7.6 MMSZ4699ET1 CH9 11.40 12 12.60 50 0.05 9.1 MMSZ4701ET1, G CJ2 13.3 14 14.7 50 0.05 10.6 MMSZ4702ET1, G CJ3 14.25 15 15.75 50 0.05 11.4 MMSZ4703ET1 CJ4 15.20 16 16.80 50 0.05 12.1 MMSZ4705ET1 CJ6 17.10 18 18.90 50 0.05 13.6 MMSZ4709ET1 CK1 22.80 24 25.20 50 0.01 18.2 MMSZ4711ET1 CK3 25.65 27 28.35 50 0.01 20.4 MMSZ4717ET1 CK9 40.85 43 45.15 50 0.01 32.6 Device* 1. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TL = 30°C ±1°C. *The “G’’ suffix indicates Pb−Free package available. http://onsemi.com 2 MMSZ4678ET1 Series 8 100 7 θ VZ , TEMPERATURE COEFFICIENT (mV/°C) θ VZ , TEMPERATURE COEFFICIENT (mV/°C) TYPICAL CHARACTERISTICS TYPICAL TC VALUES 6 5 4 VZ @ IZT 3 2 1 0 −1 −2 −3 2 3 4 5 6 7 8 9 10 11 10 10 VZ, NOMINAL ZENER VOLTAGE (V) Figure 1. Temperature Coefficients (Temperature Range − 55°C to +150°C) Figure 2. Temperature Coefficients (Temperature Range − 55°C to +150°C) 1000 1.0 PD versus TL 0.8 0.6 PD versus TA 0.2 0 25 50 75 100 T, TEMPERATURE (°C) RECTANGULAR WAVEFORM, TA = 25°C 100 0.4 125 10 1 150 0.1 Figure 3. Steady State Power Derating 1 1000 1000 TJ = 25°C IZ(AC) = 0.1 IZ(DC) f = 1 kHz IF, FORWARD CURRENT (mA) IZ = 1 mA 100 75 V (MMSZ5267BT1) 91 V (MMSZ5270BT1) 100 5 mA 20 mA 10 10 150°C 1 10 100 PW, PULSE WIDTH (ms) Figure 4. Maximum Nonrepetitive Surge Power 1000 Z ZT, DYNAMIC IMPEDANCE (Ω ) 100 VZ, NOMINAL ZENER VOLTAGE (V) Ppk , PEAK SURGE POWER (WATTS) PD, POWER DISSIPATION (WATTS) VZ @ IZT 1 12 1.2 0 TYPICAL TC VALUES 1 10 VZ, NOMINAL ZENER VOLTAGE 100 1 0.4 Figure 5. Effect of Zener Voltage on Zener Impedance 0.5 75°C 25°C 0°C 0.6 0.7 0.8 0.9 1.0 VF, FORWARD VOLTAGE (V) Figure 6. Typical Forward Voltage http://onsemi.com 3 1.1 1.2 MMSZ4678ET1 Series TYPICAL CHARACTERISTICS 1000 TA = 25°C 0 V BIAS 1 V BIAS C, CAPACITANCE (pF) I R , LEAKAGE CURRENT (m A) 1000 100 BIAS AT 50% OF VZ NOM 1 10 1 +150°C 0.1 0.01 10 1 100 10 VZ, NOMINAL ZENER VOLTAGE (V) 100 0.001 + 25°C 0.0001 −55°C 0.00001 0 10 Figure 7. Typical Capacitance 100 I Z, ZENER CURRENT (mA) TA = 25°C 10 1 0.1 0 2 4 6 8 VZ, ZENER VOLTAGE (V) 10 TA = 25°C 10 1 0.1 0.01 12 100 30 50 70 VZ, ZENER VOLTAGE (V) PEAK VALUE IRSM @ 8 ms tr 90 10 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 70 60 HALF VALUE IRSM/2 @ 20 ms 50 40 30 tP 20 10 0 0 90 Figure 10. Zener Voltage versus Zener Current (12 V to 91 V) Figure 9. Zener Voltage versus Zener Current (VZ Up to 12 V) % OF PEAK PULSE CURRENT I Z, ZENER CURRENT (mA) 80 Figure 8. Typical Leakage Current 100 0.01 20 30 40 50 60 70 VZ, NOMINAL ZENER VOLTAGE (V) 20 40 60 t, TIME (ms) Figure 11. 8 × 20 ms Pulse Waveform http://onsemi.com 4 80 90 MMSZ4678ET1 Series PACKAGE DIMENSIONS SOD−123 CASE 425−04 ISSUE E D ÂÂÂÂ ÂÂÂÂ ÂÂÂÂ NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A A1 1 HE DIM A A1 b c D E HE L E MIN 0.037 0.000 0.020 −−− 0.055 0.100 0.140 0.010 INCHES NOM 0.046 0.002 0.024 −−− 0.063 0.106 0.145 −−− MAX 0.053 0.004 0.028 0.006 0.071 0.112 0.152 −−− STYLE 1: PIN 1. CATHODE 2. ANODE L 2 MILLIMETERS MIN NOM MAX 0.94 1.17 1.35 0.00 0.05 0.10 0.51 0.61 0.71 −−− −−− 0.15 1.40 1.60 1.80 2.54 2.69 2.84 3.56 3.68 3.86 −−− −−− 0.25 C b SOLDERING FOOTPRINT* ÉÉÉ ÉÉÉ ÉÉÉ 0.91 0.036 2.36 0.093 4.19 0.165 ÉÉÉ ÉÉÉ ÉÉÉ SCALE 10:1 1.22 0.048 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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