Z ibo Seno Electronic Engineering Co., Ltd. MBR2040CT – MBR20200CT 20.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! ! ! ! ! Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency For Use in Low Voltage Application Guard Ring Die Construction C Plastic Case Material has UL Flammability K Classification Rating 94V-O TO-220AB L B M D A 1 2 3 Mechanical Data ! ! ! ! ! E Case:TO-220AB, Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Mounting Position: Any Lead Free: For RoHS / Lead Free Version G J N H H P Pin 1 + Pin 2 Pin 3 + + Case Dim Min Max A 14.22 15.88 B 9.57 10.57 C 2.54 3.43 D 5.80 6.80 E ¾ 6.35 G 12.70 14.73 H 2.29 2.79 J 0.51 1.14 K 3.53Æ 4.14Æ L 3.56 4.83 M 1.07 1.47 N 0.30 0.64 P 2.03 2.92 All Dimensions in mm Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @TL = 75°C Symbol MBR 2040 CT MBR 2045 CT MBR 2050 CT VRRM VRWM VR 40 45 50 VR(RMS) 28 31 35 IFSM Forward Voltage @IF = 10A V FM @TA = 25°C @TA = 100°C IRM Peak Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance (Note 2) Typical Thermal Resistance (Note 1) Operating and Storage Temperature Range Cj MBR 20150 CT MBR 20200 CT Units 60 100 150 200 V 42 70 105 140 V 20.0 A 150 A IO Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) MBR 20100 CT MBR 2060 CT 0.80 0.70 0.85 0.92 0.1 20 350 RJA mA 280 3.0 Tj, TSTG V -55 to +150 200 pF 2.0 °C/W -55 to +175 °C Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. MBR2040CT-MBR20200CT 1 of 2 www.senocn.com Alldatasheet Z ibo Seno Electronic Engineering Co., Ltd. 20.0 PEAK FORWARD SURGE CURRENT, Amps AVERAGE FORWARD RECTIFIED CURRENT AMPERES MBR2040CT – MBR20200CT = 40 - 100V =150 - 200V 16.0 12.0 8.0 RESISTIVE OR INDUCTIVE LOAD 4.0 0 0 20 40 60 80 100 120 140 160 180 LEAD TEMPERATURE, C O 240 210 8.3m s S i n g l e Half Since-Wave JEDEC M e th o d 180 150 120 90 60 30 0 1 2 5 10 20 50 100 NO. OF CYCLE AT 60Hz Fig.2- MAXIMUM NON - REPETITIVE SURGE CURRENT Fig.1- FORWARD CURRENT DERATING CURVE 40 40-45V FORWARD CURRENT, Amps INSTANTANEOUS REVERSE CURRENT, mA 10 O T J =100 C 1.0 T J = 75 O C 0.1 T J = 25 C O 0.01 0.001 10 8 6 4 50-60V 80-100V 2 20 40 60 80 100 120 0.4 140 0.5 0.6 0.7 0.8 0.9 1.0 1.1 FORWARD VOLTAGE, VOLTS PERCENT OF INSTANTANEOUS REVERSE VOLTAGE,(%) Fig.4- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS Fig.3- TYPICAL REVERSE CHARACTERISTICS MBR2040CT-MBR20200CT TJ = 25OC Pulse Width = 300 us 1% Duty Cycle 0.2 0.1 0 150-200V 1.0 0.8 0.6 0.4 2 of 2 www.senocn.com Alldatasheet