CYStech Electronics Corp. Spec. No. : C880Q8 Issued Date : 2012.10.01 Revised Date : 2013.03.01 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTEA2N15Q8 BVDSS ID RDSON@VGS=10V, ID=3.9A RDSON@VGS=5.5V, ID=3.3A 150V 4A 122mΩ(typ) 140mΩ(typ) Description The MTEA2N15Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications. Features • Single Drive Requirement • Fast Switching Characteristic • Repetitive Avalanche Rated • Pb-free lead plating package Symbol Outline MTEA2N15Q8 SOP-8 Pin 1 G：Gate D：Drain S：Source MTEA2N15Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C880Q8 Issued Date : 2012.10.01 Revised Date : 2013.03.01 Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TC=25°C Continuous Drain Current @VGS=10V,TC=100°C Continuous Drain Current @VGS=10V,TA=25°C Continuous Drain Current @VGS=10V,TA=100°C Pulsed Drain Current Avalanche Current Avalanche Energy @ L=0.1mH, ID=2A, RG=25Ω Repetitive Avalanche Energy @ L=0.05mH TC=25℃ TC=100℃ Total Power Dissipation TA=25℃ TA=100℃ VDS VGS Tj, Tstg 150 ±20 4 2.5 3.2 2 16 *1 2 0.2 0.05 *2 5 2 3.1 1.2 -55~+150 Symbol Rth,j-c Rth,j-a Value 25 40 *3 ID IDM IAS EAS EAR PD Operating Junction and Storage Temperature Range Limits Unit V A mJ W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Unit °C/W °C/W Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle≤1% 3. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad Characteristics (TC=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS IGSS *1 IDSS RDS(ON) Dynamic Ciss Coss Crss MTEA2N15Q8 *1 Min. Typ. Max. Unit 150 2.0 - 3.3 5.4 122 140 4.0 ±100 1 25 160 180 V V S nA - 553 58 22 - μA mΩ mΩ pF Test Conditions VGS=0, ID=250μA VDS = VGS, ID=250μA VDS =15V, ID=3.9A VGS=±20 VDS =120V, VGS =0 VDS =120V, VGS =0, Tj=125°C VGS =10V, ID=3.9A VGS =5.5V, ID=3.3A VGS=0V, VDS=25V, f=1MHz CYStek Product Specification Spec. No. : C880Q8 Issued Date : 2012.10.01 Revised Date : 2013.03.01 Page No. : 3/9 CYStech Electronics Corp. Characteristics (TC=25°C, unless otherwise specified) Symbol Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr Min. - Typ. 12 2.3 5 6 12 17 4 Max. - - 0.75 22 10 2.3 9.2 1.2 - Unit Test Conditions nC VDS=75V, VGS=10V, ID=3.9A ns VDS=25V, ID=1A, VGS=10V, RGS=6Ω A V ns nC IF=IS, VGS=0V IF=IS, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Ordering Information Device MTEA2N15Q8-0-T1-G MTEA2N15Q8 Package SOP-8 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel CYStek Product Specification Spec. No. : C880Q8 Issued Date : 2012.10.01 Revised Date : 2013.03.01 Page No. : 4/9 CYStech Electronics Corp. Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.6 ID, Drain Current(A) 14 BVDSS, Normalized Drain-Source Breakdown Voltage 16 10V, 9V,8V,7V,6V 12 10 8 VGS=5V 6 4 1.4 1.2 1 0.8 ID=250μA, VGS=0V 0.6 2 VGS=4V 0.4 0 0 2 4 6 8 VDS, Drain-Source Voltage(V) -60 10 Static Drain-Source On-State resistance vs Drain Current 20 60 100 140 Tj, Junction Temperature(°C) 180 Reverse Drain Current vs Source-Drain Voltage 1000 VSD, Source-Drain Voltage(V) R DS(ON), Static Drain-Source On-State Resistance(mΩ) 1.2 VGS=4.5V VGS=10V 100 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 0.1 1 10 ID, Drain Current(A) 100 0 2 4 6 8 IDR , Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 1000 2.4 R DS(ON), Normalized Static DrainSource On-State Resistance R DS(ON), Static Drain-Source OnState Resistance(mΩ) -20 900 ID=3.9A 800 700 600 500 400 300 200 100 VGS=10V, ID=3.9A 2 1.6 1.2 0.8 RDS(ON) @ Tj=25°C : 122 mΩ 0.4 0 0 MTEA2N15Q8 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj, Junction Temperature(°C) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C880Q8 Issued Date : 2012.10.01 Revised Date : 2013.03.01 Page No. : 5/9 Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 1000 Capacitance---(pF) Ciss C oss 100 Crss 1.6 ID=250μA 1.4 1.2 1 0.8 0.6 0.4 10 0.1 1 10 VDS , Drain-Source Voltage(V) -60 100 -20 Forward Transfer Admittance vs Drain Current 60 100 140 Gate Charge Characteristics 10 10 VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 20 Tj, Junction Temperature(°C) 1 0.1 VDS=15V Pulsed Ta=25°C 0.01 0.001 VDS=75V ID=3.9A 8 6 4 2 0 0.01 0.1 1 ID, Drain Current(A) 0 10 2 4 6 8 10 Total Gate Charge---Qg(nC) 12 14 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 5 100 RDS(ON) Limit ID, Drain Current(A) 10 100μs 1ms 1 10ms 0.1 100ms TA=25°C, Tj(max)=150°C, VGS=10V, RθJA=125°C/W Single Pulse 0.01 1s DC ID, Maximum Drain Current(A) 4.5 4 3.5 3 2.5 2 1.5 1 TC=25°C, VGS=10V 0.5 0 0.001 0.01 MTEA2N15Q8 0.1 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 TC, Case Temperature(°C) 150 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C880Q8 Issued Date : 2012.10.01 Revised Date : 2013.03.01 Page No. : 6/9 Typical Characteristics(Cont.) Single Pulse Maximum Power Dissipation Typical Transfer Characteristics 500 16 Peak Transient Power (W) 14 ID, Drain Current (A) 450 VDS=10V 12 10 8 6 4 2 TJ(MAX) =150°C TA=25°C θJA=125°C/W 400 350 300 250 200 150 100 50 0 0 2 4 6 8 VGS, Gate-Source Voltage(V) 10 0 0.0001 0.001 0.01 0.1 1 Pulse Width(s) 10 100 1000 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 0.1 0.01 0.1 0.05 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=125 °C/W 0.02 0.01 0.001 Single Pulse 0.0001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) MTEA2N15Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C880Q8 Issued Date : 2012.10.01 Revised Date : 2013.03.01 Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTEA2N15Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C880Q8 Issued Date : 2012.10.01 Revised Date : 2013.03.01 Page No. : 8/9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTEA2N15Q8 CYStek Product Specification Spec. No. : C880Q8 Issued Date : 2012.10.01 Revised Date : 2013.03.01 Page No. : 9/9 CYStech Electronics Corp. SOP-8 Dimension Right side View G Top View A Marking: I C B H Device Name Date Code J E D EA2 N15 K Front View Part A Part A M L N 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 O F *: Typical Inches Min. Max. 0.1850 0.2007 0.1457 0.1614 0.2283 0.2441 0.0500* 0.0130 0.0201 0.1472 0.1527 0.0472 0.0638 0.1889 0.2007 DIM A B C D E F G H Millimeters Min. Max. 4.70 5.10 3.70 4.10 5.80 6.20 1.27* 0.33 0.51 3.74 3.88 1.20 1.62 4.80 5.10 DIM I J K L M N O Inches Min. Max. 0.0031 0.0110 0.0157 0.0323 0.0074 0.0102 0.0145 0.0204 0.0118 0.0197 0.0031 0.0051 0.0000 0.0059 Millimeters Min. Max. 0.08 0.28 0.40 0.83 0.19 0.26 0.37 0.52 0.30 0.50 0.08 0.13 0.00 0.15 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTEA2N15Q8 CYStek Product Specification