Single P-channel MOSFET ELM34405AA-N ■General description ■Features ELM34405AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=-40V Id=-5.5A Rds(on) < 55mΩ (Vgs=-10V) Rds(on) < 94mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Note Symbol Drain-source voltage Vds -40 V Gate-source voltage Vgs ±20 -5.5 V Ta=25°C Continuous drain current Ta=70°C Pulsed drain current Id Idm Tc=25°C Power dissipation Tc=70°C Junction and storage temperature range Pd Tj, Tstg A -4.5 -20 A 2.5 3 W 1.3 -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Steady-state Symbol Rθja ■Pin configuration Typ. Max. 50 Unit °C/W Note ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. 1 2 Pin name SOURCE SOURCE 3 4 SOURCE GATE 5 6 DRAIN DRAIN 7 8 DRAIN DRAIN 4-1 D G S Single P-channel MOSFET ELM34405AA-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=-250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=-30V,Vgs=0V,Ta=125°C -10 Vds=0V, Vgs=±20V nA -2.5 V A 1 mΩ 1 -1 S V 1 1 Is -1.3 A Ism -2.6 A Rds(on) Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge μA ±250 Static drain-source on-resistance Pulsed body-diode current DYNAMIC PARAMETERS Input capacitance V -1 Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-10V, Vds=-5V Max. body-diode continuous current -40 Vds=-32V, Vgs=0V Gate threshold voltage On state drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note Gfs Vsd Gate-source charge Qg Qgs Gate-drain charge Turn-on delay time Qgd td(on) Turn-on rise time Turn-off delay time tr -1.5 Vgs=-10V, Id=-5.5A 38 55 Vgs=-4.5V, Id=-4.5A 65 94 Vds=-10V, Id=-5.5A Is=If, Vgs=0V 11 Ciss Coss Crss -1.0 -20 Vgs=0V, Vds=-10V, f=1MHz Vgs=-10V, Vds=-20V Id=-5.5A Vgs=-10V, Vds=-20V td(off) Id=-1A, Rgen=6Ω 690 pF 310 75 pF pF 14.0 2.2 nC nC 2 2 1.9 6.7 13.4 nC ns 2 2 9.7 19.4 ns 2 19.8 35.6 ns 2 22.2 ns ns 2 Turn-off fall time Body diode reverse recovery time tf trr If=-5A, dIf/dt=100A/μs 12.3 15.5 Body diode reverse recovery charge Qrr If=-5A, dIf/dt=100A/μs 7.9 NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4-2 3 nC NIKO-SEM P-Channel Logic Level Enhancement Single P-channel MOSFET P5504EVG Mode Field Effect Transistor ELM34405AA-N SOP-8 Lead-Free ■Typical electrical and thermal characteristics -Is - Reverse Drain Current(A) 100 V GS = 0V 10 1 0.1 25° C -55° C 0.01 0.001 0 4-3 T A = 125° C 0.8 1.0 1.2 0.2 0.6 0.4 -VSD - Body Diode Forward Voltage(V) 1.4 NIKO-SEM P-Channel Logic Level Enhancement Single P-channel MOSFET Mode Field Effect Transistor ELM34405AA-N 4-4 P5504EVG SOP-8 Lead-Free