HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3512S02 C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.35 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz • Micro-X plastic (S02) package APPLICATIONS • C to Ku-band DBS LNB • Other C to Ku-band communication systems ORDERING INFORMATION Part Number Order Number Package NE3512S02-T1C NE3512S02-T1C-A S02 (Pb-Free) NE3512S02-T1D NE3512S02-T1D-A Quantity 2 kpcs/reel Marking C 10 kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 4 (Gate) faces the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE3512S02 ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Symbol Ratings Unit Drain to Source Voltage VDS 4 V Gate to Source Voltage VGS −3 V Drain Current ID IDSS mA Gate Current IG 100 µA 165 mW Total Power Dissipation Ptot Note Channel Temperature Tch +125 °C Storage Temperature Tstg −65 to +125 °C Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. Document No. PG10592EJ01V0DS (1st edition) Date Published February 2006 CP(N) NE3512S02 RECOMMENDED OPERATING CONDITIONS (TA = +25°C) Parameter Symbol MIN. TYP. MAX. Unit VDS 1 2 3 V Drain Current ID 5 10 15 mA Input Power Pin − − 0 dBm Drain to Source Voltage ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Gate to Source Leak Current IGSO VGS = −3 V − 0.5 10 µA Saturated Drain Current IDSS VDS = 2 V, VGS = 0 V 15 40 70 mA VGS (off) VDS = 2 V, ID = 100 µA −0.2 −0.7 −2.0 V Transconductance gm VDS = 2 V, ID = 10 mA 40 55 − mS Noise Figure NF VDS = 2 V, ID = 10 mA, f = 12 GHz − 0.35 0.5 dB Associated Gain Ga 12.5 13.5 − dB Gate to Source Cutoff Voltage 2 Data Sheet PG10592EJ01V0DS NE3512S02 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 Mounted on Glass Epoxy PCB (1.08 cm2 × 1.0 mm (t) ) 200 Drain Current ID (mA) Total Power Dissipation Ptot (mW) 250 150 100 50 80 60 VGS = 0 V 40 –0.2 V 20 –0.4 V –0.6 V 0 50 100 150 200 250 1.0 0 Ambient Temperature TA (˚C) 2.0 Drain to Source Voltage VDS (V) DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 80 Drain Current ID (mA) VDS = 2 V 60 40 20 0 –2.0 –1.0 0 Gate to Source Voltage VGS (V) 20 1.6 1.4 Ga 1.2 15 1.0 10 0.8 0.6 NFmin 0.4 5 0.2 0.0 2 4 6 8 10 12 14 16 0 18 Minimum Noise Figure NFmin (dB) 25 VDS = 2 V ID = 10 mA 1.8 Associated Gain Ga (dB) Minimum Noise Figure NFmin (dB) 2.0 MINIMUM NOISE FIGURE, ASSOCIATED GAIN vs. DRAIN CURRENT 1.6 16 f = 12 GHz 1.4 VDS = 2 V 14 1.2 Associated Gain Ga (dB) MINIMUM NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY 12 Ga 1.0 10 0.8 8 0.6 6 NFmin 0.4 4 0.2 2 0.0 0 Frequency f (GHz) 5 10 15 20 0 25 Drain Current ID (mA) Remark The graphs indicate nominal characteristics. Data Sheet PG10592EJ01V0DS 3 NE3512S02 S-PARAMETERS S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.ncsd.necel.com/ 4 Data Sheet PG10592EJ01V0DS NE3512S02 RF MEASURING LAYOUT PATTERN (REFERENCE ONLY) (UNIT: mm) 2.80 2.60 2.06 0.64 13.0 0.54 0.74 2.06 1.7 mm/R.P. 2.6 Reference Plane (Calibration Plane) 1.7 1.7 Reference Plane (Calibration Plane) φ 0.3 TH L2–uX Ver. 1 6.0 RT/duroid 5880/ROGERS t = 0.254 mm εr = 2.20 tan delta = 0.0009 @10 GHz Data Sheet PG10592EJ01V0DS 5 NE3512S02 PACKAGE DIMENSIONS S02 (UNIT: mm) (Top View) (Bottom View) 3.2±0.2 0.65 TYP. 2.2±0.2 1 2.2±0.2 0.5 TYP. 2.6±0.1 1 C 2 4 (Side View) 2.2±0.2 0.15±0.05 1.7 1.5 MAX. 2 3 3 3.2±0.2 PIN CONNECTIONS 1. 2. 3. 4. 6 4 Source Drain Source Gate Data Sheet PG10592EJ01V0DS NE3512S02 RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Partial Heating Soldering Conditions Condition Symbol Peak temperature (package surface temperature) : 260°C or below Time at peak temperature : 10 seconds or less Time at temperature of 220°C or higher : 60 seconds or less Preheating time at 120 to 180°C : 120±30 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (terminal temperature) : 350°C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below IR260 HS350 Caution Do not use different soldering methods together (except for partial heating). Data Sheet PG10592EJ01V0DS 7 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Concentration Limit per RoHS (values are not yet fixed) Concentration contained in CEL devices -A Not Detected Lead (Pb) < 1000 PPM Mercury < 1000 PPM Not Detected Cadmium < 100 PPM Not Detected Hexavalent Chromium < 1000 PPM Not Detected PBB < 1000 PPM Not Detected PBDE < 1000 PPM Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. 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