CEL NE3512S02-T1C Hetero junction field effect transistor Datasheet

HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3512S02
C TO Ku BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
FEATURES
• Super low noise figure and high associated gain
NF = 0.35 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz
• Micro-X plastic (S02) package
APPLICATIONS
• C to Ku-band DBS LNB
• Other C to Ku-band communication systems
ORDERING INFORMATION
Part Number
Order Number
Package
NE3512S02-T1C
NE3512S02-T1C-A
S02 (Pb-Free)
NE3512S02-T1D
NE3512S02-T1D-A
Quantity
2 kpcs/reel
Marking
C
10 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 4 (Gate) faces the perforation side
of the tape
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3512S02
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
4
V
Gate to Source Voltage
VGS
−3
V
Drain Current
ID
IDSS
mA
Gate Current
IG
100
µA
165
mW
Total Power Dissipation
Ptot
Note
Channel Temperature
Tch
+125
°C
Storage Temperature
Tstg
−65 to +125
°C
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PG10592EJ01V0DS (1st edition)
Date Published February 2006 CP(N)
NE3512S02
RECOMMENDED OPERATING CONDITIONS (TA = +25°C)
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
VDS
1
2
3
V
Drain Current
ID
5
10
15
mA
Input Power
Pin
−
−
0
dBm
Drain to Source Voltage
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Gate to Source Leak Current
IGSO
VGS = −3 V
−
0.5
10
µA
Saturated Drain Current
IDSS
VDS = 2 V, VGS = 0 V
15
40
70
mA
VGS (off)
VDS = 2 V, ID = 100 µA
−0.2
−0.7
−2.0
V
Transconductance
gm
VDS = 2 V, ID = 10 mA
40
55
−
mS
Noise Figure
NF
VDS = 2 V, ID = 10 mA, f = 12 GHz
−
0.35
0.5
dB
Associated Gain
Ga
12.5
13.5
−
dB
Gate to Source Cutoff Voltage
2
Data Sheet PG10592EJ01V0DS
NE3512S02
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
Mounted on Glass Epoxy PCB
(1.08 cm2 × 1.0 mm (t) )
200
Drain Current ID (mA)
Total Power Dissipation Ptot (mW)
250
150
100
50
80
60
VGS = 0 V
40
–0.2 V
20
–0.4 V
–0.6 V
0
50
100
150
200
250
1.0
0
Ambient Temperature TA (˚C)
2.0
Drain to Source Voltage VDS (V)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
80
Drain Current ID (mA)
VDS = 2 V
60
40
20
0
–2.0
–1.0
0
Gate to Source Voltage VGS (V)
20
1.6
1.4
Ga
1.2
15
1.0
10
0.8
0.6
NFmin
0.4
5
0.2
0.0
2
4
6
8
10
12
14
16
0
18
Minimum Noise Figure NFmin (dB)
25
VDS = 2 V
ID = 10 mA
1.8
Associated Gain Ga (dB)
Minimum Noise Figure NFmin (dB)
2.0
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. DRAIN CURRENT
1.6
16
f = 12 GHz
1.4 VDS = 2 V
14
1.2
Associated Gain Ga (dB)
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. FREQUENCY
12
Ga
1.0
10
0.8
8
0.6
6
NFmin
0.4
4
0.2
2
0.0
0
Frequency f (GHz)
5
10
15
20
0
25
Drain Current ID (mA)
Remark The graphs indicate nominal characteristics.
Data Sheet PG10592EJ01V0DS
3
NE3512S02
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.ncsd.necel.com/
4
Data Sheet PG10592EJ01V0DS
NE3512S02
RF MEASURING LAYOUT PATTERN (REFERENCE ONLY) (UNIT: mm)
2.80
2.60
2.06
0.64
13.0
0.54
0.74
2.06
1.7 mm/R.P.
2.6
Reference Plane
(Calibration Plane)
1.7
1.7
Reference Plane
(Calibration Plane)
φ 0.3 TH
L2–uX Ver. 1
6.0
RT/duroid 5880/ROGERS
t = 0.254 mm
εr = 2.20
tan delta = 0.0009 @10 GHz
Data Sheet PG10592EJ01V0DS
5
NE3512S02
PACKAGE DIMENSIONS
S02 (UNIT: mm)
(Top View)
(Bottom View)
3.2±0.2
0.65 TYP.
2.2±0.2
1
2.2±0.2
0.5 TYP.
2.6±0.1
1
C
2
4
(Side View)
2.2±0.2
0.15±0.05
1.7
1.5 MAX.
2
3
3
3.2±0.2
PIN CONNECTIONS
1.
2.
3.
4.
6
4
Source
Drain
Source
Gate
Data Sheet PG10592EJ01V0DS
NE3512S02
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions.
For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Infrared Reflow
Partial Heating
Soldering Conditions
Condition Symbol
Peak temperature (package surface temperature)
: 260°C or below
Time at peak temperature
: 10 seconds or less
Time at temperature of 220°C or higher
: 60 seconds or less
Preheating time at 120 to 180°C
: 120±30 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (terminal temperature)
: 350°C or below
Soldering time (per side of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
IR260
HS350
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet PG10592EJ01V0DS
7
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Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
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Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
Not Detected
Lead (Pb)
< 1000 PPM
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
-AZ
(*)
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