600V / 4A, High-Side Automotive Gate Driver IC Features Description Automotive qualified to AEC Q100 The FAN7171-F085 is a monolithic high-side gate drive IC that can drive high-speed MOSFETs and IGBTs that operate up to +600 V. It has a buffered output stage with all NMOS transistors designed for high pulse current driving capability and minimum cross-conduction. Common-Mode dv/dt Noise-Cancelling Circuit Floating Channel for Bootstrap Operation to +600 V 4 A Sourcing and 4 A Sinking Current Driving Capability 3.3 V and 5 V Input Logic Compatible Output In-phase with Input Signal Under- Voltage Lockout for VBS 25 V Shunt Regulator on VDD and VBS The UVLO circuit prevents malfunction when VBS is lower than the specified threshold voltage. 8-Lead, Small Outline Package The high-current and low-output voltage-drop feature make this device suitable for sustaining switch drivers and energy-recovery switch drivers in automotive motor drive inverters, switching power supplies, and highpower DC-DC converter applications. Applications ON Semiconductor’s high-voltage process and common-mode noise-canceling techniques provide stable operation of the high-side driver under high-dv/dt noise circumstances. An advanced level-shift circuit offers high-side gate driver operation up to VS=-9.8 V (typical) for VBS=15 V. Common Rail Injection Systems DC-DC Converter Motor Drive (Electric Power Steering, Fans) Related Product Resources FAN7171-F085 Product Folder AN-8102 200 Recommendations to Avoid Short Pulse Width Issues in HVIC Gate Driver Applications AN-9052 Design Guide for Selection of Bootstrap Components AN-4171 FAN7085 High-Side Gate Driver- Internal Recharge Path Design Considerations AN-6076 Design and Application Guide of Bootstrap Circuit for High-Voltage Gate-Drive IC Figure 1. 8-Lead, SOIC, Narrow Body Ordering Information Part Number Operating Temperature Range FAN7171M-F085 FAN7171MX-F085 -40°C ~ 125°C Package 8-Lead, Small Outline Integrated Circuit (SOIC), JEDEC MS-012, .150 inch Narrow Body Packing Method Tube Tape & Reel Note: 1. These devices passed wave soldering test by JESD22A-111. 2. A suffix as “…F085P” has been temporarily introduced in order to manage a double source strategy as ON Semiconductor has officially announced in Aug 2014. © 2013 Semiconductor Component Industries December-2017, Rev. 3 Product Order Number: FAN7171-F085 FAN7171-F085 — 600V / 4A, High-Side Automotive Gate Driver IC FAN7171-F085 VIN 15V RBOOT DBOOT FAN7171_F805 VB 8 1 VDD R1 HO 2 IN PWM 7 CBOOT 3 NC C1 L1 R2 VS 6 NC 4 GND 5 C2 D1 Figure 2. VOUT Typical Application Block Diagram VDD 1 VDD GND 2 110K PULSE GENERATOR IN UVLO 4 R NOISE CANCELLER S R Q Shoot-through current compensated gate driver 25V Pins 3 and 5 are no connection. Figure 3. Block Diagram Pin Configuration VDD 1 IN 2 8 VB 7 HO FAN7171_F085 FAN7371 Figure 4. NC 3 6 VS GND 4 5 NC Pin Assignment (Top Through View) Pin Descriptions Pin # Name 1 VDD Description Supply Voltage 2 IN Logic Input for High-Side Gate Driver Output 3 NC No Connection 4 GND 5 NC No Connection 6 VS High-Voltage Floating Supply Return 7 HO High-Side Driver Output 8 VB High-Side Floating Supply Ground www.onsemi.com 2 8 VB 7 HO 6 VS 25V FAN7171-F085 — 600V / 4A, High-Side Automotive Gate Driver IC Typical Application Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Characteristics VS High-Side Floating Offset Voltage VB High-Side Floating Supply Voltage(3) VHO High-Side Floating Output Voltage VDD Low-Side and Logic Supply Voltage VIN Logic Input Voltage dVS/dt (3) Min. Max. Unit VB-VSHUNT VB+0.3 V -0.3 625.0 V VS-0.3 VB+0.3 V -0.3 VSHUNT V -0.3 VDD+0.3 V ±50 V/ns 0.625 W Allowable Offset Voltage Slew Rate (4,5,6) PD Power Dissipation JA Thermal Resistance 200 °C/W TJ Junction Temperature -55 150 °C TSTG Storage Temperature -55 150 °C Operating Ambient Temperature -40 125 °C TA ESD Human Body Model (HBM) 1500 Charge Device Model (CDM) 500 V Notes: 3. This IC contains a shunt regulator on VDD and VBS with a normal breakdown voltage of 25 V. Please note that this supply pin should not be driven by a low-impedance voltage source greater than the VSHUNT specified in the Electrical Characteristics section. 4. Mounted on 76.2 x 114.3 x 1.6 mm PCB (FR-4 glass epoxy material). 5. Refer to the following standards: JESD51-2: Integral circuits thermal test method environmental conditions, natural convection, and JESD51-3: Low effective thermal conductivity test board for leaded surface-mount packages. 6. Do not exceed power dissipation (PD) under any circumstances. Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance. ON Semiconductor does not recommend exceeding them or designing to Absolute Maximum Ratings. Symbol VBS VS Parameter Min. Max. Unit High-Side Floating Supply Voltage VS+10 VS+20 V High-Side Floating Supply Offset Voltage (DC) 6-VDD 600 V VS VB V GND VDD V 10 20 V 80 - ns High-Side Floating Supply Offset Voltage (Transient) VHO High-Side Output Voltage VIN Logic Input Voltage VDD Supply Voltage TPULSE Minimum Input Pulse Width (7) -15 (~170) -7 (~400) Note: 7. Input pulses shorter than the minimum recommendation can cause abnormal output. Short input pulses can be turn on pulses (i.e., rising edge to the adjacent falling edge), turn off pulses (i.e., falling edge to the adjacent rising edge) but also parasitic pulses induced by noise. Refer to Figure 25 and Figure 26. Value guaranteed by design. www.onsemi.com 3 FAN7171-F085 — 600V / 4A, High-Side Automotive Gate Driver IC Absolute Maximum Ratings VBIAS (VDD, VBS)=15 V, -40°C ≤ TA ≤ 125°C, unless otherwise specified. The VIN and IIN parameters are referenced to GND. The VO and IO parameters are relative to VS and are applicable to the respective output HO. Symbol Parameter Conditions Min. Typ. Max. Unit Power Supply Section IQDD Quiescent VDD Supply Current VIN=0 V or 5 V 25 70 A IPDD Operating VDD Supply Current fIN=20 kHz, No Load 35 100 A Bootstrapped Supply Section VBSUV+ VBS Supply Under-Voltage Positive-Going Threshold Voltage VBS=Sweep 8.2 9.2 10.2 V VBSUV- VBS Supply Under-Voltage Negative-Going Threshold Voltage VBS=Sweep 7.5 8.5 9.5 V VBSHYS VBS Supply UVLO Hysteresis Voltage VBS=Sweep ILK Offset Supply Leakage Current VB=VS=600 V IQBS Quiescent VBS Supply Current VIN=0 V or 5 V IPBS Operating VBS Supply Current CLOAD=1 nF, fIN=20 kHz, RMS Value 0.6 V 50 A 60 120 A 0.73 2.80 mA Shunt Regulator Section VSHUNT VDD and VBS Shunt Regulator Clamping Voltage ISHUNT=5 mA 23 25 V Input Logic Section (IN) VIH Logic “1” Input Voltage VIL Logic “0” Input Voltage IIN+ Logic Input High Bias Current VIN=5 V IIN- Logic Input Low Bias Current VIN=0 V RIN Input Pull-down Resistance 2.5 V 45 40 0.8 V 125 A 2 A 110 k Gate Driver Output Section (HO) VOH High Level Output Voltage (VBIAS - VO) No Load 1.5 V VOL Low Level Output Voltage No Load 35 mV IO+ Output High, Short-Circuit Pulsed Current(8) VHO=0 V, VIN=5 V, PW ≤10 µs 3.0 4.0 A IO- Output Low, Short-Circuit Pulsed Current(8) VHO=15 V,VIN=0 V, PW ≤10 µs 3.0 4.0 A VS Allowable Negative VS Pin Voltage for IN Signal Propagation to HO -9.8 -7.0 V Typ. Max. Unit Note: 8. These parameters guaranteed by design. Dynamic Electrical Characteristics VBIAS (VDD, VBS) =15 V, VS=GND=0 V, CL=1000 pF, and-40°C ≤ TA ≤ 125°C, unless otherwise specified. Symbol Parameter Conditions Min. tON Turn-On Propagation Delay VS=0 V 150 210 ns tOFF Turn-Off Propagation Delay VS=0 V 150 210 ns tR Turn-On Rise Time 25 50 ns tF Turn-Off Fall Time 15 45 ns www.onsemi.com 4 FAN7171-F085 — 600V / 4A, High-Side Automotive Gate Driver IC Electrical Characteristics Figure 5. Figure 7. Figure 9. Turn-On Propagation Delay vs. Temperature Figure 6. Turn-On Rise Time vs. Temperature Operating VDD Supply Current vs. Temperature Figure 8. Figure 10. www.onsemi.com 5 Turn-Off Propagation Delay vs. Temperature Turn-Off Fall Time vs. Temperature Operating VBS Supply Current vs. Temperature FAN7171-F085 — 600V / 4A, High-Side Automotive Gate Driver IC Typical Performance Characteristics Figure 11. Figure 13. VBS UVLO+ vs. Temperature Figure 12. Logic High Input Voltage vs. Temperature Figure 14. Figure 15. Input Pull-Down Resistance vs. Temperature Logic Low Input Voltage vs. Temperature Figure 16. www.onsemi.com 6 VBS UVLO- vs. Temperature High-Level Output Voltage vs. Temperature FAN7171-F085 — 600V / 4A, High-Side Automotive Gate Driver IC Typical Performance Characteristics Figure 17. Output High, Short-Circuit Pulsed Current Figure 18. vs. Temperature Output Low, Short-Circuit Pulsed Current vs. Temperature Figure 19. Output High, Short-Circuit Pulsed Current Figure 20. vs. Supply Voltage Output Low, Short-Circuit Pulsed Current vs. Supply Voltage Figure 21. Quiescent VDD Supply Current vs. Supply Voltage Figure 22. www.onsemi.com 7 Quiescent VBS Supply Current vs. Supply Voltage FAN7171-F085 — 600V / 4A, High-Side Automotive Gate Driver IC Typical Performance Characteristics 15V VDD 10nF VB 10µF 10µF 0.1µF 15V VS GND FAN7171_F085 1000pF HO IN Figure 23. Switching Time Test Circuit (Referenced 8-SOIC) 50% 50% IN ton tr toff 90% HO - VS Figure 24. tf 90% 10% 10% Switching Time Waveform Definitions Pulse width > 80ns Pulse width < 80ns IN HO Figure 25. IN HO Figure 26. Abnormal Output Output Waveform with Short Turn On Input Pulse Width Pulse width > 80ns Pulse width < 80ns Abnormal Output Output Waveform with Short Turn Off Input Pulse Width www.onsemi.com 8 FAN7171-F085 — 600V / 4A, High-Side Automotive Gate Driver IC Switching Time Definitions 4.90±0.10 0.65 A (0.635) 8 5 B 1.75 6.00±0.20 1 PIN ONE INDICATOR 5.60 3.90±0.10 4 1.27 1.27 0.25 C B A LAND PATTERN RECOMMENDATION SEE DETAIL A 0.175±0.075 0.22±0.03 C 1.75 MAX 0.10 0.42±0.09 OPTION A - BEVEL EDGE (0.86) x 45° R0.10 GAGE PLANE R0.10 OPTION B - NO BEVEL EDGE 0.36 NOTES: 8° 0° SEATING PLANE 0.65±0.25 (1.04) DETAIL A A) THIS PACKAGE CONFORMS TO JEDEC MS-012, VARIATION AA. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE MOLD FLASH OR BURRS. D) LANDPATTERN STANDARD: SOIC127P600X175-8M E) DRAWING FILENAME: M08Arev16 SCALE: 2:1 Figure 27. 8-Lead, Small Outline Integrated Circuit (SOIC), JEDEC MS-012, .150 inch Narrow Body www.onsemi.com 9 FAN7171-F085 — 600V / 4A, High-Side Automotive Gate Driver IC Physical Dimensions FAN7171-F085 — 600V / 4A, High-Side Automotive Gate Driver IC ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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