Chenmko CHT5988ZPT Pnp switching transistor Datasheet

CHENMKO ENTERPRISE CO.,LTD
CHT5988ZPT
SURFACE MOUNT
PNP Switching Transistor
VOLTAGE 60 Volts
CURRENT 5 Ampere
APPLICATION
* DC/DC converters
* Supply line switching
* Battery charger
* Driver in low supply voltage applications
SC-73/SOT-223
FEATURE
* Small flat package. ( SC-73/SOT-223 )
* High current (Max.=5A).
* Suitable for high packing density.
1.65+0.15
6.50+0.20
0.90+0.05
3.5+0.2
* Low voltage (Max.=60V) .
7.0+0.3
3.00+0.10
* PNP Switching Transistor
0.9+0.2
2.0+0.3
CONSTRUCTION
0.70+0.10
0.70+0.10
2.30+0.1
2.0+0.3
0.27+0.05
0.01~0.10
0.70+0.10
4.60+0.1
1
1 Base
C (3)
CIRCUIT
3
2
2 Emitter
3 Collector ( Heat Sink )
(1) B
E (2)
SC-73/SOT-223
Dimensions in millimeters
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
-100
V
VCEO
collector-emitter voltage
open base
−
-60
V
VEBO
emitter-base voltage
open collector
−
-6
V
IC
collector current (DC)
−
-5
A
ICM
peak collector current
−
-15
A
IBM
peak base current
−
A
Ptot
total power dissipation
−
-1
2.0
Tstg
storage temperature
−55
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−55
+150
°C
Tamb ≤ 25 °C;
W
2006-7
RATING CHARACTERISTIC CURVES ( CHT5988ZPT )
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
VALUE
UNIT
62.5
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
MIN.
MAX.
UNIT
BVCBO
SYMBOL
Collector-Base Breakdown Voltage
IC= -100uA
-100
−
V
BVCEO
Collector-Emitter Breakdown Voltage IC= -10mA
-60
−
V
BVEBO
Emitter-Base Breakdown Voltage
IE= -100uA
-6
−
V
ICBO
Collector Cut-Off Current
VCB= -80V
−
-50
nA
IEBO
Emitter Cut-Off Current
VEB= -6V
−
-10
nA
hFE
PARAMETER
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
VBE(on)
Base-Emitter on Voltage
fT
Cob
Transition Frequency
Collector Output Capacitance
CONDITIONS
VCE= -1V , IC= -10mA
100
−
VCE= -1V , IC= -2A
120
300
VCE= -1V , IC= -5A
60
−
VCE= -1V , IC= -10A
10
−
IC= -100mA , IB= -10mA
IC= -1A , IB= -100mA
−
−
-50
-140
IC= -2A , IB= -200mA
−
−
−
-210
-460
-1.27
−
-1.2
V
100
−
MHz
pF
IC= -5A , IB= -500mA
IC= -5A , IB= -500mA
VCE= -1V , IC= -5A
VCE= -10V , IE= -100mA
VCB= -10V , IE= 0A , f=1MHz
72(Typ.)
mV
V
RATING CHARACTERISTIC CURVES ( CHT5988ZPT )
DC Current Gain vs Collector Current
Collector Emitter Saturation Voltage vs cOllector Current
1000
VCE = -1V
-VCE(sat)䇭䋺䇭COLLECTOR
EMITTER SATURATION
VOLTAGE ( mV )
hFE䇭䋺䇭DC CURRENT GAIN
1000
100
10
0.01
0.1
1
100
10
1.0
0.01
10
1
10
Transistion Frequencyvs Emitter Current
Base Emitter Saturation Voltage vs cOllector Current
10
1000
fT䇭䋺䇭TRANSITION FREQUENCY
( MHz )
-VBE(sat)䇭䋺䇭BASE EMITTER
SATURATION VOLTAGE ( mV )
0.1
-IC䇭䋺䇭COLLECTOR CURRENT ( A )
-IC䇭䋺䇭COLLECTOR CURRENT ( A )
1.0
0.1
0.01
IC/IB = 10
100
10
0.1
1
-IC䇭䋺䇭COLLECTOR CURRENT ( A )
10
0.01
0.1
IE䇭䋺䇭EMITTER CURRENT ( A )
1
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