CEU4269 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES D1/D2 40V , 14A , RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. -40V , -12A , RDS(ON) = 45mΩ @VGS = 10V. RDS(ON) = 65mΩ @VGS = 4.5V. G1 G2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. S1 S2 D1/D2 Lead free product is acquired. S1 G1 TO-252-4L package. S2 G2 CEU SERIES TO-252-4L ABSOLUTE MAXIMUM RATINGS Parameter Tc = 25 C unless otherwise noted Symbol N-Channel 40 P-Channel 40 Units V VGS ±20 ±20 V ID e 14 -12 A IDM 56 Drain-Source Voltage VDS Gate-Source Voltage Drain Current-Continuous e Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C PD - Derate above 25 C Operating and Store Temperature Range -48 A 10.4 W 0.08 W/ C TJ,Tstg -55 to 150 C Thermal Characteristics Symbol Limit Units Thermal Resistance, Junction-to-Case Parameter RθJC 12 C/W Thermal Resistance, Junction-to-Ambient RθJA 50 C/W Rev 1. 2006.Sep http://www.cetsemi.com Details are subject to change without notice . 1 CEU4269 N-Channel Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 40 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 40V, VGS = 0V 1 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA Off Characteristics V On Characteristics Gate Threshold Voltage VGS(th) Static Drain-Source RDS(on) On-Resistance Dynamic Characteristics VGS = VDS, ID = 250µA 3 V VGS = 10V, ID = 7A 1 25 32 mΩ VGS = 4.5V, ID = 5A 35 46 mΩ d Forward Transconductance gFS c Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 10V, ID = 7A VDS = 20V, VGS = 0V, f = 1.0 MHz 3 S 1050 pF 155 pF 95 pF Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 20V, ID = 6A, VGS = 10V, RGEN = 3Ω 14 30 ns 10 20 ns 17 35 ns Turn-Off Fall Time tf 18 35 ns Total Gate Charge Qg 20.5 27 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 20V, ID = 6A, VGS = 10V 3.5 nC 4.0 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b IS Drain-Source Diode Forward Voltage c VSD VGS = 0V, IS = 1.0A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. e.Calculated continuous current based on the maximum allowable junction temperature. Package limitation current=8A. 2 8 A 1.2 V CEU4269 P-Channel Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250µA -40 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = -40V, VGS = 0V -1 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA Off Characteristics V On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) VGS = VDS, ID = -250µA -3 V VGS = -10V, ID = -5A -1 37 45 mΩ VGS = -4.5V, ID = -3A 50 65 mΩ Dynamic Characteristics d Forward Transconductance c gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = -10V, ID = -5A VDS = -20V, VGS = 0V, f = 1.0 MHz 3 S 1120 pF 210 pF 125 pF Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = -20V, ID = -5A, VGS = -10V, RGEN = 3Ω 13 26 ns 6 12 ns 38 64 ns Turn-On Fall Time tf 7 14 ns Total Gate Charge Qg 19.2 25.3 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = -20V, ID = -5A, VGS = -10V 3 nC 4 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b IS Drain-Source Diode Forward Voltage c VSD VGS = 0V, IS = -1.0A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. e.Calculated continuous current based on the maximum allowable junction temperature. Package limitation current=8A. 3 -8 A -1.2 V CEU4269 N-CHANNEL 10 50 25 C 8 ID, Drain Current (A) ID, Drain Current (A) VGS=10,8,6V 6 4 2 40 5 30 20 10 TJ=125 C VGS=3.0V 0 0 0 1 2 3 4 5 0 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) 750 500 Coss 250 Crss 0 5 10 15 20 2.2 1.9 ID=7A VGS=10V 1.6 1.3 1.0 0.7 0.4 -100 25 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS IS, Source-drain current (A) VTH, Normalized Gate-Source Threshold Voltage 8 Figure 2. Transfer Characteristics 1000 ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 6 Figure 1. Output Characteristics Ciss 1.2 4 VGS, Gate-to-Source Voltage (V) 1250 0 2 VDS, Drain-to-Source Voltage (V) 1500 1.3 -55 C VGS=0V 10 10 10 -25 0 25 50 75 100 125 150 1 0 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 4 CEU4269 P-CHANNEL 10 30 25 C -ID, Drain Current (A) -ID, Drain Current (A) -VGS=10,6,5V 8 6 -VGS=3.0V 4 2 24 18 12 6 -55 C TJ=125 C 0 0 0 1 2 3 4 0 5 Figure 8. Transfer Characteristics VTH, Normalized Gate-Source Threshold Voltage RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 500 Coss 250 Crss 5 10 15 20 25 30 1.9 ID=-5A VGS=-10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 TJ, Junction Temperature( C) Figure 9. Capacitance Figure 10. On-Resistance Variation with Temperature VDS=VGS ID=-250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 2.2 -VDS, Drain-to-Source Voltage (V) -IS, Source-drain current (A) C, Capacitance (pF) Ciss 750 1.2 8 Figure 7. Output Characteristics 1000 1.3 6 -VGS, Gate-to-Source Voltage (V) 1250 0 4 -VDS, Drain-to-Source Voltage (V) 1500 0 2 VGS=0V 10 10 10 -25 0 25 50 75 100 125 150 1 0 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) -VSD, Body Diode Forward Voltage (V) Figure 11. Gate Threshold Variation with Temperature Figure 12. Body Diode Forward Voltage Variation with Source Current 5 CEU4269 10 10 V =20V DS ID=6A 8 6 4 2 0 10 10 10 10 0 4 8 12 16 20 24 -2 TC=25 C TJ=150 C Single Pulse -2 10 -1 10 0 10 1 Figure 13. Gate Charge Figure 14. Maximum Safe Operating Area 8 6 4 2 0 10 10 10 10 4 10 2 2 RDS(ON)Limit -ID, Drain Current (A) -VGS, Gate to Source Voltage (V) -1 VDS, Drain-Source Voltage (V) 10 5 100ms DC 0 Qg, Total Gate Charge (nC) VDS=-20V ID=-5A 0 1ms 10ms 1 10 P-CHANNEL 10 2 RDS(ON)Limit ID, Drain Current (A) VGS, Gate to Source Voltage (V) N-CHANNEL 8 12 16 20 1ms 10ms 100ms DC 1 0 -1 -2 10 TC=25 C TJ=150 C Single Pulse -2 10 -1 10 0 10 1 Qg, Total Gate Charge (nC) -VDS, Drain-Source Voltage (V) Figure 15. Gate Charge Figure 16. Maximum Safe Operating Area 6 10 2 CEU4269 VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 18. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 17. Switching Test Circuit 10 0 D=0.5 0.2 10 -1 PDM 0.1 t1 0.05 t2 0.02 0.01 Single Pulse 10 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 -2 10 -2 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (sec) Figure 19. Normalized Thermal Transient Impedance Curve 7 10 3 10 4