MCC MBR10150CT 10 amp high voltage power schottky barrier rectifier 150volt Datasheet

MCC
TM
Micro Commercial Components
omponents
20736 Marilla Street Chatsworth
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Features
•
MBR10150CT
10 Amp High Voltage
High Junction Temperature Capability
•
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
•
Low Leakage Current
x
Marking : type number
•
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0 and MSL Rating 1
Power Schottky
Barrier Rectifier
150Volts
TO-220AB
Maximum Ratings
•
•
•
C
B
Operating J unction Temperature : 150°C
Storage Temperature: - 50°C to +150°C
Per d iode Thermal Resistance 4°C/W Junction to Case
S
F
Q
T
MCC
Catalog
Number
MBR 10150 CT
Maximum
Recurrent
Peak Reverse
Voltage
150 V
Maximum
RMS
Voltage
105V
Maximum
DC
Blocking
Voltage
150 V
A
U
1 2
3
H
K
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
MBR10150CT
IF(AV)
10 A
J
D
R
G
IFSM
120A
8.3ms half sine
N
PIN 1
PIN 2
CASE
PIN 3
VF
.92V
.75V
Maximum
Reverse Current At
Rated DC Blocking
Voltage
V
L
TC = 125 °C
IR
50uA
7mA
IFM = 5A
TJ = 25°C
IFM = 5A
TJ = 125°C
TJ = 25°C
TJ = 125°C
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex 7.
DIM
A
B
C
DIMENSIONS
INCHES
MM
MIN
MAX
MIN
MAX
.560
.625
14.22
15.88
.380
.420
9.65
10.67
.140
.190
3.56
4.82
D
F
G
H
J
K
L
N
.020
.139
.190
--.012
.500
.045
.190
.045
.161
.110
.250
.025
.580
.060
.210
0.51
3.53
2.29
--0.30
12.70
1.14
4.83
1.14
4.09
2.79
6.35
0.64
14.73
1.52
5.33
Q
R
S
T
U
V
.100
.080
.045
.230
----.045
.135
.115
.055
.270
.050
-----
2.54
2.04
1.14
5.84
----1.15
3.43
2.92
1.39
6.86
1.27
-----
NOTE
∅
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MCC
MBR10150CT
TM
Micro Commercial Components
Fig. 1: Average forward power dissipation versus FIG.2- FORWARD CURRENT DERATING CURVE
average forward current (per diode).
Fig. 3: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
10
AVERAGE FORWARD CURRENT. (A)
PF(av)(W)
5.0
δ = 0.2
δ = 0.5
δ = 0.1
4.5
4.0
δ = 0.05
3.5
δ=1
3.0
2.5
2.0
1.5
T
1.0
0.5
IF(av) (A)
tp
δ=tp/T
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
RESISTIVE OR
INDUCTIVE LOAD
8
6
4
2
0
0
50
100
o
CASE TEMPERATURE. ( C)
150
Fig. 4: Relative variation of thermal impedance
junction to case versus pulse duration (per diode).
Zth(j-c)/Rth(j-c)
IM(A)
1.0
80
70
0.8
60
50
Tc=50°C
0.6
Tc=75°C
0.4
δ = 0.5
40
30
20
δ = 0.2
δ = 0.1
Tc=125°C
IM
10
Single pulse
t(s)
t
δ=0.5
0
1E-3
1E-2
T
0.2
1E-1
1E+0
Fig. 5: Reverse leakage current versus reverse
voltage applied (typical values, per diode)
0.0
1E-3
tp(s)
δ=tp/T
1E-2
tp
1E-1
1E+0
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values, per diode).
IR(µA)
C(pF)
1E+5
200
F=1MHz
Tj=25°C
Tj=175°C
1E+4
100
Tj=150°C
1E+3
Tj=125°C
1E+2
50
Tj=75°C
1E+1
1E+0
Tj=25°C
20
1E-1
1E-2
VR(V)
0
Revision: 7
25
50
75
VR(V)
100
125
150
10
1
2
5
10
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200
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MCC
MBR10150CT
TM
Micro Commercial Components
Fig. 7: Forward voltage drop versus forward
current (maximum values, per diode).
Fig. 8: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board, copper thickness: 35µm)
IFM(A)
Rth(j-a) (°C/W)
100.0
80
70
Tj=125°C
Typical values
10.0
60
Tj=125°C
50
Tj=25°C
40
30
1.0
20
VFM(V)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Revision: 7
10
0
S(cm²)
0
2
4
6
8
10
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Ordering Information
Device
Packing
(Part Number)-BP
Bulk;1Kpcs/Box
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product herein to make corrections, modifications , enhancements , improvements , or other changes .
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