IXFA20N85XHV IXFP20N85X IXFH20N85X X-Class HiPerFETTM Power MOSFET VDSS ID25 = 850V = 20A 330m RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263HV G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 850 V VDGR TJ = 25C to 150C, RGS = 1M 850 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 20 A IDM TC = 25C, Pulse Width Limited by TJM 50 A IA TC = 25C 10 A EAS TC = 25C 800 mJ dv/dt IS IDM, VDD VDSS, TJ 150°C 50 V/ns PD TC = 25C 540 W -55 ... +150 C TJ TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 10.65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 2.5 3.0 6.0 g g g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263HV) Mounting Torque (TO-220 & TO-247) Weight TO-263HV TO-220 TO-247 TO-220AB (IXFP) G DS D (Tab) TO-247 (IXFH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features International Standard Packages High Voltage Package Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 850 VGS(th) VDS = VGS, ID = 2.5mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) V 5.5 V 100 nA TJ = 125C VGS = 10V, ID = 0.5 • ID25, Note 1 25 A 1.5 mA 330 m Applications © 2016 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100703C(6/16) IXFA20N85XHV Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 6 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 10 S 0.8 1660 pF 1730 pF 24 pF 67 270 pF pF 20 ns 28 ns 44 ns 20 ns 63 nC 12 nC 26 nC Crss IXFP20N85X IXFH20N85X Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 5 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.23 C/W RthJC RthCS TO-220 TO-247 C/W C/W 0.50 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 20 A ISM Repetitive, pulse Width Limited by TJM 80 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 20A, -di/dt = 100A/μs 190 1.6 16.5 ns μC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFA20N85XHV Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 20 45 VGS = 10V VGS = 15V 18 40 11V 16 35 14 I D - Amperes 12 10 8 10V 30 9V I D - Amperes IXFP20N85X IXFH20N85X 8V 25 9V 20 15 6 8V 10 4 7V 5 2 7V 6V 0 0 0 1 2 3 4 5 6 0 7 5 10 15 VDS - Volts 20 25 30 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 10A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 3.4 20 VGS = 10V 18 VGS = 10V 3.0 9V 16 R DS(on) - Normalized 2.6 I D - Amperes 14 12 8V 10 8 7V 6 I D = 20A 2.2 I D = 10A 1.8 1.4 1.0 4 0.6 6V 2 0.2 0 0 2 4 6 8 10 12 14 16 -50 18 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 10A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 3.4 150 1.2 VGS = 10V TJ = 125ºC BVDSS / VGS(th) - Normalized RDS(on) - Normalized 3.0 2.6 2.2 1.8 TJ = 25ºC 1.4 1.1 BVDSS 1.0 0.9 VGS(th) 0.8 1.0 0.6 0.7 0 5 10 15 20 I D - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 25 30 35 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFA20N85XHV Fig. 7. Maximum Drain Current vs. Case Temperature IXFP20N85X IXFH20N85X Fig. 8. Input Admittance 20 24 18 20 16 14 I D - Amperes I D - Amperes 16 12 TJ = 125ºC 25ºC - 40ºC 12 10 8 8 6 4 4 2 0 0 -50 -25 0 25 50 75 100 125 150 4.0 4.5 5.0 5.5 6.0 TC - Degrees Centigrade 6.5 7.0 7.5 8.0 8.5 9.0 9.5 VGS - Volts Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode 18 50 TJ = - 40ºC 16 45 40 14 35 12 125ºC I S - Amperes g f s - Siemens 25ºC 10 8 30 25 20 6 TJ = 125ºC 15 TJ = 25ºC 4 10 2 5 0 0 0 2 4 6 8 10 12 14 16 18 20 0.3 0.4 0.5 0.6 I D - Amperes 0.7 0.8 1.0 1.1 1.2 Fig. 12. Capacitance Fig. 11. Gate Charge 16 10,000 VDS = 425V 14 Ciss Capacitance - PicoFarads I D = 10A I G = 10mA 12 VGS - Volts 0.9 VSD - Volts 10 8 6 4 1,000 Coss 100 10 2 Crss f = 1 MHz 1 0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFA20N85XHV IXFP20N85X IXFH20N85X Fig. 14. Forward-Bias Safe Operating Area Fig. 13. Output Capacitance Stored Energy 100 25 RDS(on) Limit 25µs 20 100µs I D - Amperes EOSS - MicroJoules 10 15 10 1 1ms 0.1 TJ = 150ºC 5 10ms TC = 25ºC Single Pulse DC 0.01 0 0 100 200 300 400 500 600 700 800 10 900 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds © 2016 IXYS CORPORATION, All Rights Reserved 0.1 1 10 IXFA20N85XHV IXFP20N85X IXFH20N85X TO-263HV Outline 1 = Gate 2 = Source 3 = Drain TO-247 Outline TO-220 Outline A E E A2 E2/2 Q 0P U H1 Q D T 4 (D2) 1 D1 2 2 3 4 3 (E1) L1 L A2 EJECTOR PIN 0P S E2 D 1 R A A1 L1 L b2 e c e1 3X b b4 b e c A1 3X b2 1 = Gate 2,4 = Drain 3 = Source 1 = Gate 2,4 = Drain 3 = Source W BOTTOM FLATNESS IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_20N85X(S5-D901) 2-09-16