DCR3640H85 Phase Control Thyristor Preliminary Information DS6140-2 October 2014 (LN32030) KEY PARAMETERS FEATURES Double Side Cooling High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt 8500V 3640A 54000A 2000V/µs 200A/µs * Higher dV/dt selections available APPLICATIONS Bridge Rectifiers High Voltage Power Supplies Motor Drives VOLTAGE RATINGS Part and Ordering Number DCR3640H85* DCR3640H80 DCR3640H75 Repetitive Peak Voltages VDRM and VRRM V 8500 8000 7500 Conditions Tvj = -40°C to 125°C, IDRM = IRRM = 600mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Lower voltage grades available. 0 0 *8200V @ -40 C, 8500V @ 0 C Outline type code: H (See Package Details for further information) ORDERING INFORMATION Fig. 1 Package outline When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR3640H85 Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order. 1/10 www.dynexsemi.com DCR3640H85 SEMICONDUCTOR CURRENT RATINGS Tcase = 60°C unless stated otherwise Symbol Parameter Test Conditions Max. Units 3640 A Double Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value - 5718 A Continuous (direct) on-state current - 5306 A IT Half wave resistive load SURGE RATINGS Symbol ITSM 2 It Parameter Surge (non-repetitive) on-state current Test Conditions Max. Units 10ms half sine, Tcase = 125°C 54.0 kA VR = 0 14.58 MA s Min. Max. Units 2 I t for fusing 2 THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Rth(c-h) Parameter Thermal resistance – junction to case Thermal resistance – case to heatsink Test Conditions Double side cooled DC - 0.004255 °C/W Single side cooled Anode DC - 0.008 °C/W Cathode DC - 0.0093 °C/W Double side - 0.0009 °C/W - 0.0018 °C/W - 125 °C Clamping force 135.0kN (with mounting compound) Blocking VDRM / VRRM Single side Tvj Virtual junction temperature Tstg Storage temperature range -55 125 °C Fm Clamping force 120 155 kN 2/10 www.dynexsemi.com DCR3640H85 SEMICONDUCTOR DYNAMIC CHARACTERISTICS Symbol IRRM/IDRM Parameter Test Conditions Min. Max. Units Peak reverse and off-state current At VRRM/VDRM, Tcase = 125°C - 600 mA dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125°C, gate open - 2000 V/µs dI/dt Rate of rise of on-state current From 67% VDRM to 2x IT(AV) Repetitive 50Hz - 200 A/µs Gate source 30V, 10, Non-repetitive - 500 A/µs tr < 0.5µs, Tj = 125°C VT(TO) rT tgd Threshold voltage – Low level 500 to 4000A at Tcase = 125°C - 1.21 V Threshold voltage – High level 4000 to 8000A at Tcase = 125°C - 1.4067 V On-state slope resistance – Low level 500A to 4000A at Tcase = 125°C - 0.33 m On-state slope resistance – High level 4000A to 8000A at Tcase = 125°C - 0.2767 m VD = 67% VDRM, gate source 30V, 10 - 3 µs 1000 µs 3400 6700 µC 46 63 A Delay time tr = 0.5µs, Tj = 25°C tq Turn-off time IT = 3000A, Tj = 125°C, VR = 200V, dI/dt = 1A/µs, dVDR/dt = 20V/µs linear QS Stored charge IT = 3000A, Tj = 125°C, dI/dt – 1A/µs, VRpeak ~5100V, VR ~ 3400V IRR Reverse recovery current IL Latching current Tj = 25°C, VD = 5V - 3 A IH Holding current Tj = 25°C, RG-K = , ITM = 500A, IT = 5A - 300 mA 3/10 www.dynexsemi.com DCR3640H85 SEMICONDUCTOR GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Test Conditions Max. Units VGT Gate trigger voltage VDRM = 5V, Tcase = 25°C 1.5 V VGD Gate non-trigger voltage At 50% VDRM, Tcase = 125°C 0.4 V IGT Gate trigger current VDRM = 5V, Tcase = 25°C 350 mA IGD Gate non-trigger current At 50% VDRM, Tcase = 125°C 10 mA CURVES 9000 min 25°C Instantaneous on state current, IT - (A) 8000 max 25°C 7000 min 125°C 6000 max 125°C 5000 4000 3000 2000 1000 0 1.00 2.00 3.00 Instantaneous on state voltage VT - (V) 4.00 Fig.2 Maximum & minimum on-state characteristics VTM EQUATION VTM = A + Bln (IT) + C.IT+D.IT Where A = 2.035252 B = -0.20854 C = 0.000150 D = 0.02514 these values are valid for Tj = 125°C for IT 500A to 8000A 4/10 www.dynexsemi.com DCR3640H85 SEMICONDUCTOR 130 14000 120 180 13000 110 120 C) 15000 Mean Power Dissipation (W) 10000 9000 8000 7000 6000 180 120 5000 90 60 4000 60 Maximum case temperature, T case ( 11000 30 3000 2000 90 100 o 12000 90 30 80 70 60 50 40 30 20 10 1000 0 0 1000 2000 3000 4000 0 5000 0 1000 Mean on-state current, It(av) - (A) 110 120 14 90 100 4000 Fig.4 Maximum permissible case temperature, double side cooled – sine wave 12 60 30 90 Mean power dissipation - (kW) Maximum heatsink temperature, T Heatsink - ( ° C) 180 3000 Mean on-state current, IT(AV) - (A) Fig.3 On-state power dissipation – sine wave 120 2000 80 70 60 50 40 10 8 6 d.c. 180 120 90 60 30 4 30 20 2 10 0 0 0 1000 2000 3000 4000 Mean on-state current, IT(AV) - (A) Fig.5 Maximum permissible heatsink temperature, double side cooled – sine wave 0 1000 2000 3000 4000 5000 6000 Mean on-state current, IT (AV) - (A) Fig.6 On-state power dissipation – rectangular wave 5/10 www.dynexsemi.com DCR3640H85 SEMICONDUCTOR 130 d.c. 180 120 90 60 110 100 90 Maximum heatsink temperature Theatsink -(o C) Maximum permissible case temperature , Tcase -(° C) 120 120 80 70 60 50 40 30 20 10 d.c. 180 120 90 60 30 110 100 90 80 70 60 50 40 30 20 10 0 0 1000 2000 3000 4000 5000 6000 0 0 1000 2000 Fig.7 Maximum permissible case temperature, double side cooled – rectangular wave 1 Double side cooled Transient Thermal Resistance (K/kW) 5000 6000 Fig.8 Maximum permissible heatsink temperature, double side cooled – rectangular wave 12 Anode side cooled Double side cooled 10 4000 Mean on-state current, IT (AV) - (A) Mean on-state current, IT(AV) - (A) Anode side cooled 3 4 1.24786361 Ti (s) 0.67007122 0.14563223 0.01981569 1.28702484 Ri (°C/kW) 0.51177271 1.94595762 0.91956601 4.66635596 Ti (s) 2.89822124 0.50524092 Ti (s) Cathode side cooled 2 Ri (°C/kW) Cathode side cooled Ri (°C/kW) 8 0.8334561 0.60621847 1.56769894 0.0358286 10.6466908 2.41723953 1.53684913 0.62607497 4.9592331 3.44130269 0.26943359 0.02350127 10.172444 i 4 Zth [Ri (1 exp(T / Ti )] i 1 6 DRth(j-c) Conduction Tables show the increments of thermal resistance R th(j-c) when the device operates at conduction angles other than d.c. 4 Double side cooling DZth (z) q° sine. rect. 180 0.38 0.26 120 0.44 0.37 90 0.49 0.43 60 0.54 0.49 30 0.58 0.55 15 0.60 0.58 2 0 0.001 3000 0.01 0.1 Time (s) 1 10 Anode Side Cooling DZth (z) q° sine. rect. 180 0.32 0.23 120 0.36 0.31 90 0.41 0.36 60 0.45 0.40 30 0.48 0.45 15 0.49 0.48 Cathode Sided Cooling DZth (z) q° sine. rect. 180 0.33 0.23 120 0.38 0.33 90 0.43 0.37 60 0.47 0.43 30 0.51 0.48 15 0.52 0.51 100 Fig.9 Maximum (limit) transient thermal impedance – junction to case (°C/kW) 6/10 www.dynexsemi.com DCR3640H85 SEMICONDUCTOR 60 30 260 Conditions: Tj = 125°C VR = 0 220 40 30 20 10 ITSM I2t 25 200 180 20 160 140 15 120 100 10 80 60 5 40 0 1 10 Number of cycles at 50Hz 20 100 0 1 Fig.10 Multi-cycle surge current 0 100 10 Pulse width, tp - (ms) Fig.11 Single-cycle surge current 20000 400 Reverse Recorvery Current, Irr - (A) Stored Charge, Qs - (µC) I2t value - (MA2s) Peak half sine forward current, ITSM - (kA) Peak half sine forward current, I TSM - (kA) 240 Conditions: Tj = 125°C VR = 0 Pulse width = 10ms 50 Q Smax = 6700*(di/dt) 0.522 10000 Q Smin = 3400*(di/dt) 0.5867 0 0 2 4 6 8 Rate of change of on-state current, di/dt - (A/µs) Fig.12 Stored charge 10 300 I rr min = 63.366*(di/dt) 0.7979 y = 63.366x0.7979 200 I rr min = 46.492*(di/dt) 0.8402 100 0 0 2 4 6 8 10 Rate of decay of on-state current, di/dt - (A/µs) Fig.13 Reverse recovery current 7/10 www.dynexsemi.com DCR3640H85 SEMICONDUCTOR 10 9 Gate trigger voltage, V GT - (V) 8 Upper Limit 7 6 Preferred gate drive area 5 4 3 Tj = -40oC 2 Lower Limit Tj = 25oC Tj = 125oC 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Gate trigger current IGT, - (A) Fig14 Gate Characteristics 30 Lower Limit Upper Limit 5W 25 10W 20W Gate trigger voltage, VGT - (V) 50W 100W 20 150W -40C 15 10 5 0 0 1 2 3 4 5 6 7 8 9 10 Gate trigger current, IGT - (A) Fig. 15 Gate characteristics 8/10 www.dynexsemi.com DCR3640H85 SEMICONDUCTOR PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Device DCRxxxxH42 DCRxxxxH52 DCR4420H65 DCR4660H65 DCR3640H85 DCR3980H85 Maximum Thickness (mm) 35.15 35.27 35.3 35.3 35.65 35.65 Minimum Thickness (mm) 34.28 34.4 34.7 34.7 35.05 35.05 Lead length: 420mm Lead terminal connector: M4 ring Package outline type code:H Fig.16 Package outline 9/10 www.dynexsemi.com DCR3640H85 SEMICONDUCTOR IMPORTANT INFORMATION: This publication is provided for information only and not for resale. The products and information in this publication are intended for use by appropriately trained technical personnel. Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application.The user must evaluate the suitability of the product and the completeness of the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements are met. Should additional product information be needed please contact Customer Service. Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical errors. The information is provided without any warranty or guarantee of any kind. This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it is the most up to date version and has not been superseded. The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or malfunction. The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use outside the product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. Appropriate application design and safety precautions should always be followed to protect persons and property. Product Status & Product Ordering: We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for production. The annotations are as follows:Target Information: Preliminary Information: No Annotation: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. The product design is complete and final characterisation for volume production is in progress.The datasheet represents the product as it is now understood but details may change. The product has been approved for production and unless otherwise notified by Dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. All products and materials are sold and services provided subject to Dynex’s conditions of sale, which are available on request. Any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. HEADQUARTERS OPERATIONS CUSTOMER SERVICE DYNEX SEMICONDUCTOR LIMITED Doddington Road, Lincoln, Lincolnshire, LN6 3LF United Kingdom. Phone: +44 (0) 1522 500500 Fax: +44 (0) 1522 500550 Web: http://www.dynexsemi.com Phone: +44 (0) 1522 502753 / 502901 Fax: +44 (0) 1522 500020 e-mail: [email protected] Dynex Semiconductor Ltd. Technical Documentation – Not for resale. 10/10 www.dynexsemi.com