MITSUBISHI Nch POWER MOSFET FS30KMJ-3 HIGH-SPEED SWITCHING USE FS30KMJ-3 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 f 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 E 0.75 ± 0.15 w 2.6 ± 0.2 1 2 3 ¡4V DRIVE ¡VDSS ................................................................................ 150V ¡rDS (ON) (MAX) .............................................................. 86mΩ ¡ID ......................................................................................... 30A ¡Integrated Fast Recovery Diode (TYP.) ........... 100ns ¡Viso ................................................................................ 2000V 0.75 ± 0.15 2.54 ± 0.25 4.5 ± 0.2 2.54 ± 0.25 q GATE w DRAIN e SOURCE q e TO-220FN APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Parameter Conditions VDSS VGSS Drain-source voltage Gate-source voltage ID IDM Drain current Drain current (Pulsed) IDA Avalanche drain current (Pulsed) IS ISM Source current Source current (Pulsed) PD T ch Maximum power dissipation Channel temperature T stg Viso Storage temperature Isolation voltage AC for 1minute, Terminal to case Weight Typical value — VGS = 0V VDS = 0V L = 100µH Ratings Unit 150 ±20 V V 30 120 A A 30 A 30 120 A A 30 –55 ~ +150 W °C –55 ~ +150 2000 °C V g 2.0 Feb.1999 MITSUBISHI Nch POWER MOSFET FS30KMJ-3 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS IGSS Drain-source breakdown voltage Gate-source leakage current IDSS VGS (th) Drain-source leakage current Gate-source threshold voltage rDS (ON) Drain-source on-state resistance rDS (ON) VDS (ON) Drain-source on-state resistance Drain-source on-state voltage y fs Ciss Forward transfer admittance Input capacitance Coss Crss Output capacitance Reverse transfer capacitance td (on) tr Turn-on delay time Rise time td (off) Turn-off delay time tf VSD Fall time Source-drain voltage Rth (ch-c) trr Thermal resistance Reverse recovery time Limits Test conditions Unit Min. Typ. Max. 150 — — — — ±0.1 V µA — 1.0 — 1.5 0.1 2.0 mA V — 66 86 mΩ — — 69 0.99 90 1.29 mΩ V — — 38 3000 — — S pF — — 320 160 — — pF pF — — 22 42 — — ns ns — 280 — ns — — 130 1.0 — 1.5 ns V — — — 100 4.17 — °C/W ns ID = 1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = 150V, V GS = 0V ID = 1mA, VDS = 10V ID = 15A, VGS = 10V ID = 15A, VGS = 4V ID = 15A, VGS = 10V ID = 15A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz VDD = 80V, I D = 15A, VGS = 10V, RGEN = RGS = 50Ω IS = 15A, VGS = 0V Channel to case IS = 30A, dis/dt = –100A/µs PERFORMANCE CURVES 40 30 20 10 0 MAXIMUM SAFE OPERATING AREA 3 2 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 50 0 50 100 150 102 7 5 3 2 tw = 10ms 101 7 5 3 2 100ms 100 10ms 1ms 7 TC = 25°C 100ms 5 Single Pulse DC 3 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 200 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 10V 5V 50 5V 4V 2.0 VGS = 10V DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 4V 40 TC = 25°C Pulse Test 30 3V 20 10 3V 1.6 PD = 30W 1.2 2.5V 8 TC = 25°C Pulse Test 4 PD = 30W 0 0 1 2 3 4 DRAIN-SOURCE VOLTAGE VDS (V) 2V 5 0 0 0.4 0.8 1.2 1.6 2.0 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS30KMJ-3 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) ID = 50A 3 2 30A 1 10A 0 2 4 6 TC = 25°C VDS = 10V Pulse Test FORWARD TRANSFER ADMITTANCE yfs (S) 10 20 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 102 7 5 4 3 TC = 25°C 0 2 4 6 8 101 7 5 4 3 100 100 10 75°C 125°C 2 2 VDS = 10V Pulse Test 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 2 Tch = 25°C VGS = 0V f = 1MHZ 104 102 7 5 3 2 40 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 20 103 7 5 3 2 10V 60 TRANSFER CHARACTERISTICS (TYPICAL) 30 7 5 3 2 VGS = 4V DRAIN CURRENT ID (A) 40 0 80 0 10 TC = 25°C Pulse Test GATE-SOURCE VOLTAGE VGS (V) 50 DRAIN CURRENT ID (A) 8 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) 4 0 CAPACITANCE Ciss, Coss, Crss (pF) 100 TC = 25°C Pulse Test Ciss Coss Crss SWITCHING TIME (ns) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 5 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 103 7 5 4 3 2 102 7 5 4 3 2 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) td(off) Tch = 25°C VDD = 80V VGS = 10V RGEN = RGS = 50Ω 101 0 10 tf tr td(on) 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS30KMJ-3 HIGH-SPEED SWITCHING USE 10 SOURCE CURRENT IS (A) VDS = 50V 6 80V 100V 4 2 0 20 40 60 80 TC = 125°C 20 75°C 25°C 10 0 0.4 0.8 1.2 1.6 2.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 4.0 2 100 7 5 4 3 2 –50 0 50 100 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) VDS = 10V ID = 1mA 3.2 2.4 1.6 0.8 0 150 CHANNEL TEMPERATURE Tch (°C) 0.4 30 GATE CHARGE Qg (nC) 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 10–1 VGS = 0V Pulse Test 40 0 100 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) 50 Tch = 25°C ID = 30A 8 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch – c) (°C/ W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 101 7 5 D = 1.0 3 0.5 2 0.2 100 7 PDM 5 3 0.1 tw 2 0.05 T 10–1 0.02 7 0.01 D= tw 5 T Single Pulse 3 2 10–2 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57 PULSE WIDTH tw (s) Feb.1999