Powerex Power FS30KMJ-3 Nch power mosfet high-speed switching use Datasheet

MITSUBISHI Nch POWER MOSFET
FS30KMJ-3
HIGH-SPEED SWITCHING USE
FS30KMJ-3
OUTLINE DRAWING
Dimensions in mm
3 ± 0.3
6.5 ± 0.3
2.8 ± 0.2
f 3.2 ± 0.2
3.6 ± 0.3
14 ± 0.5
15 ± 0.3
10 ± 0.3
1.1 ± 0.2
1.1 ± 0.2
E
0.75 ± 0.15
w
2.6 ± 0.2
1 2 3
¡4V DRIVE
¡VDSS ................................................................................ 150V
¡rDS (ON) (MAX) .............................................................. 86mΩ
¡ID ......................................................................................... 30A
¡Integrated Fast Recovery Diode (TYP.) ........... 100ns
¡Viso ................................................................................ 2000V
0.75 ± 0.15
2.54 ± 0.25
4.5 ± 0.2
2.54 ± 0.25
q GATE
w DRAIN
e SOURCE
q
e
TO-220FN
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS
Symbol
(Tc = 25°C)
Parameter
Conditions
VDSS
VGSS
Drain-source voltage
Gate-source voltage
ID
IDM
Drain current
Drain current (Pulsed)
IDA
Avalanche drain current (Pulsed)
IS
ISM
Source current
Source current (Pulsed)
PD
T ch
Maximum power dissipation
Channel temperature
T stg
Viso
Storage temperature
Isolation voltage
AC for 1minute, Terminal to case
Weight
Typical value
—
VGS = 0V
VDS = 0V
L = 100µH
Ratings
Unit
150
±20
V
V
30
120
A
A
30
A
30
120
A
A
30
–55 ~ +150
W
°C
–55 ~ +150
2000
°C
V
g
2.0
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS30KMJ-3
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
(Tch = 25°C)
Symbol
Parameter
V (BR) DSS
IGSS
Drain-source breakdown voltage
Gate-source leakage current
IDSS
VGS (th)
Drain-source leakage current
Gate-source threshold voltage
rDS (ON)
Drain-source on-state resistance
rDS (ON)
VDS (ON)
Drain-source on-state resistance
Drain-source on-state voltage
y fs
Ciss
Forward transfer admittance
Input capacitance
Coss
Crss
Output capacitance
Reverse transfer capacitance
td (on)
tr
Turn-on delay time
Rise time
td (off)
Turn-off delay time
tf
VSD
Fall time
Source-drain voltage
Rth (ch-c)
trr
Thermal resistance
Reverse recovery time
Limits
Test conditions
Unit
Min.
Typ.
Max.
150
—
—
—
—
±0.1
V
µA
—
1.0
—
1.5
0.1
2.0
mA
V
—
66
86
mΩ
—
—
69
0.99
90
1.29
mΩ
V
—
—
38
3000
—
—
S
pF
—
—
320
160
—
—
pF
pF
—
—
22
42
—
—
ns
ns
—
280
—
ns
—
—
130
1.0
—
1.5
ns
V
—
—
—
100
4.17
—
°C/W
ns
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 150V, V GS = 0V
ID = 1mA, VDS = 10V
ID = 15A, VGS = 10V
ID = 15A, VGS = 4V
ID = 15A, VGS = 10V
ID = 15A, VDS = 10V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 80V, I D = 15A, VGS = 10V, RGEN = RGS = 50Ω
IS = 15A, VGS = 0V
Channel to case
IS = 30A, dis/dt = –100A/µs
PERFORMANCE CURVES
40
30
20
10
0
MAXIMUM SAFE OPERATING AREA
3
2
DRAIN CURRENT ID (A)
POWER DISSIPATION PD (W)
POWER DISSIPATION DERATING CURVE
50
0
50
100
150
102
7
5
3
2
tw = 10ms
101
7
5
3
2
100ms
100
10ms
1ms
7 TC = 25°C
100ms
5
Single Pulse
DC
3
2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2
200
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 10V 5V
50
5V 4V
2.0
VGS = 10V
DRAIN CURRENT ID (A)
DRAIN CURRENT ID (A)
4V
40
TC = 25°C
Pulse Test
30
3V
20
10
3V
1.6
PD = 30W
1.2
2.5V
8
TC = 25°C
Pulse Test
4
PD = 30W
0
0
1
2
3
4
DRAIN-SOURCE VOLTAGE VDS (V)
2V
5
0
0
0.4
0.8
1.2
1.6
2.0
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS30KMJ-3
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ID = 50A
3
2
30A
1
10A
0
2
4
6
TC = 25°C
VDS = 10V
Pulse Test
FORWARD TRANSFER
ADMITTANCE yfs (S)
10
20
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
102
7
5
4
3
TC = 25°C
0
2
4
6
8
101
7
5
4
3
100
100
10
75°C
125°C
2
2
VDS = 10V
Pulse Test
2 3 4 5 7 101
2 3 4 5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
2
Tch = 25°C
VGS = 0V
f = 1MHZ
104
102
7
5
3
2
40
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
20
103
7
5
3
2
10V
60
TRANSFER CHARACTERISTICS
(TYPICAL)
30
7
5
3
2
VGS = 4V
DRAIN CURRENT ID (A)
40
0
80
0
10
TC = 25°C
Pulse Test
GATE-SOURCE VOLTAGE VGS (V)
50
DRAIN CURRENT ID (A)
8
DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) (mΩ)
4
0
CAPACITANCE
Ciss, Coss, Crss (pF)
100
TC = 25°C
Pulse Test
Ciss
Coss
Crss
SWITCHING TIME (ns)
DRAIN-SOURCE ON-STATE
VOLTAGE VDS (ON) (V)
5
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
103
7
5
4
3
2
102
7
5
4
3
2
3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
td(off)
Tch = 25°C
VDD = 80V
VGS = 10V
RGEN = RGS = 50Ω
101 0
10
tf
tr
td(on)
2 3 4 5 7 101
2 3 4 5 7 102
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS30KMJ-3
HIGH-SPEED SWITCHING USE
10
SOURCE CURRENT IS (A)
VDS = 50V
6
80V
100V
4
2
0
20
40
60
80
TC = 125°C
20
75°C
25°C
10
0
0.4
0.8
1.2
1.6
2.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
4.0
2
100
7
5
4
3
2
–50
0
50
100
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
VDS = 10V
ID = 1mA
3.2
2.4
1.6
0.8
0
150
CHANNEL TEMPERATURE Tch (°C)
0.4
30
GATE CHARGE Qg (nC)
101
7 VGS = 10V
ID = 1/2ID
5 Pulse Test
4
3
10–1
VGS = 0V
Pulse Test
40
0
100
GATE-SOURCE THRESHOLD
VOLTAGE VGS (th) (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
50
Tch = 25°C
ID = 30A
8
0
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch – c) (°C/ W)
GATE-SOURCE VOLTAGE VGS (V)
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
102
7
5
3
2
101
7
5 D = 1.0
3 0.5
2
0.2
100
7
PDM
5
3
0.1
tw
2
0.05
T
10–1
0.02
7
0.01
D= tw
5
T
Single Pulse
3
2
10–2 –4
10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57
PULSE WIDTH tw (s)
Feb.1999
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