OPA8512CND Infrared LED Chip High Speed GaAlAs/GaAlAs 1. Material Substrate GaAlAs (N Type) Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage Min VF(1) Typ Max Unit Condition V IF=10uA V IF=50mA 1.1 VF(2) 1.6 Reverse Voltage VR 5 V IR=10uA Power PO 17 mW IF=50mA nm IF=50mA λP Wavelength 850 ∆λ 45 nm IF=50mA Rise Time Tr 22 ns Fall Time Tf 13 ns ※ Note : Power is measured by Sorter E/T system with bare chip. (b) Bottom Area (c) Bonding Pad (d) Chip Thickness (e) Junction Height --------------------- 10.8mil x 10.8mil --------------------- 11.8mil x 11.8mil --------------------110um --------------------7mil --------------------6.5mil (b) (d) (e) (a) P Side Electrode AUK Corp. Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea Tel. +82 63 839 1111 Fax. +82 63 835 8259 www.auk.co.kr P Epi (c) N Epi 4. Mechanical Data (a) Emission Area N Side Electrode