Kexin BST50 Npn darlington transistor Datasheet

Transistors
SMD Type
NPN Darlington Transistors
KST50; KST51; KST52
(BST50; BST51; BST52)
SOT-89
Features
Unit: mm
+0.1
4.50-0.1
+0.1
1.50-0.1
High current (max. 0.5 A)
Integrated diode and resistor.
+0.1
0.53-0.1
+0.1
0.44-0.1
0.40
+0.1
-0.1
2.60
+0.1
-0.1
+0.1
0.48-0.1
+0.1
0.80-0.1
+0.1
2.50-0.1
Low voltage (max. 80 V)
+0.1
4.00-0.1
+0.1
1.80-0.1
+0.1
3.00-0.1
1. Base
2. Collector
3. Emiitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
KST50
Collector-base voltage
KST51
VCBO
KST52
KST50
Collector-emitter voltage
KST51
VCEO
KST52
Rating
Unit
60
V
80
V
90
V
45
V
60
V
80
V
VEBO
5
V
Collector current (DC)
IC
0.5
A
Peak collector current
ICM
1.5
A
base current
IB
100
mA
Power dissipation Tamb
PD
1.3
W
Thermal resistance from junction to ambient *
Rth(j-a)
96
K/W
Thermal resistance from junction to solder point
K/W
Emitter-base voltage
25
*
Rth(j-s)
16
Junction temperature
Tj
150
Storage temperature
Tstg
-65 to +150
* Device mounted on a printed-circuit board, single sided copper, tinplated,
mounting pad for collector 6 cm2.
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Transistors
SMD Type
KST50; KST51; KST52
(BST50; BST51; BST52)
Electrical Characteristics Ta = 25
Parameter
Symbol
KST50
Collector cutoff current
KST51
ICES
KST52
Emitter cutoff current
IEBO
DC current gain
hFE
Testconditons
Min
Max
Unit
VBE=0;VCE=45V
50
nA
VBE=0;VCE=60V
50
nA
VBE=0;VCE=80V
50
nA
VEB = 4V, IC = 0
50
nA
1.3
V
1.3
V
1.9
V
IC = 150mA; VCE = 10 V
1000
IC =500 mA; VCE = 10V
2000
Typ
IC = 500 mA; IB = 0.5 mA
Collector-emitter saturation voltage
VCE(sat)
Base to emitte rsaturation voltage
VBE(sat) IC = 500 mA; IB=0.5mA
IC = 500 mA; IB = 0.5mA;TJ=150
turn-on time
ton
ICon = 500 mA; IBon = 0.5 mA;
400
turn-off time
toff
IBoff = -0.5 mA
1500
ns
Transition frequency
fT
IC = 500 mA; VCE = 5 V; f = 100 MHz
200
MHz
Marking
2
NO.
KST50
KST51
KST52
Marking
AS1
AS2
AS3
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