Transistors SMD Type NPN Darlington Transistors KST50; KST51; KST52 (BST50; BST51; BST52) SOT-89 Features Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 High current (max. 0.5 A) Integrated diode and resistor. +0.1 0.53-0.1 +0.1 0.44-0.1 0.40 +0.1 -0.1 2.60 +0.1 -0.1 +0.1 0.48-0.1 +0.1 0.80-0.1 +0.1 2.50-0.1 Low voltage (max. 80 V) +0.1 4.00-0.1 +0.1 1.80-0.1 +0.1 3.00-0.1 1. Base 2. Collector 3. Emiitter Absolute Maximum Ratings Ta = 25 Parameter Symbol KST50 Collector-base voltage KST51 VCBO KST52 KST50 Collector-emitter voltage KST51 VCEO KST52 Rating Unit 60 V 80 V 90 V 45 V 60 V 80 V VEBO 5 V Collector current (DC) IC 0.5 A Peak collector current ICM 1.5 A base current IB 100 mA Power dissipation Tamb PD 1.3 W Thermal resistance from junction to ambient * Rth(j-a) 96 K/W Thermal resistance from junction to solder point K/W Emitter-base voltage 25 * Rth(j-s) 16 Junction temperature Tj 150 Storage temperature Tstg -65 to +150 * Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2. www.kexin.com.cn 1 Transistors SMD Type KST50; KST51; KST52 (BST50; BST51; BST52) Electrical Characteristics Ta = 25 Parameter Symbol KST50 Collector cutoff current KST51 ICES KST52 Emitter cutoff current IEBO DC current gain hFE Testconditons Min Max Unit VBE=0;VCE=45V 50 nA VBE=0;VCE=60V 50 nA VBE=0;VCE=80V 50 nA VEB = 4V, IC = 0 50 nA 1.3 V 1.3 V 1.9 V IC = 150mA; VCE = 10 V 1000 IC =500 mA; VCE = 10V 2000 Typ IC = 500 mA; IB = 0.5 mA Collector-emitter saturation voltage VCE(sat) Base to emitte rsaturation voltage VBE(sat) IC = 500 mA; IB=0.5mA IC = 500 mA; IB = 0.5mA;TJ=150 turn-on time ton ICon = 500 mA; IBon = 0.5 mA; 400 turn-off time toff IBoff = -0.5 mA 1500 ns Transition frequency fT IC = 500 mA; VCE = 5 V; f = 100 MHz 200 MHz Marking 2 NO. KST50 KST51 KST52 Marking AS1 AS2 AS3 www.kexin.com.cn ns