FDS89141 Dual N-Channel PowerTrench® MOSFET 100 V, 3.5 A, 62 mΩ Features General Description Max rDS(on) = 62 mΩ at VGS = 10 V, ID = 3.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has Max rDS(on) = 100 mΩ at VGS = 6 V, ID = 2.8 A been optimized for High performance trench technology for extremely low rDS(on) rDS(on), switching performance and ruggedness. High power and current handling capability in a widely used surface mount package Applications 100% UIL Tested Synchronous Rectifier RoHS Compliant Primary Switch For Bridge Topology D2 D2 D1 D1 G2 S2 G1 5 D2 6 D1 7 D1 S1 Pin 1 D2 8 Q2 Q1 4 G2 3 S2 2 G1 1 S1 SO-8 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Ratings 100 Units V VGS Gate to Source Voltage ±20 V Drain Current -Continuous 3.5 ID Parameter -Pulsed 18 Single Pulse Avalanche Energy EAS PD TJ, TSTG (Note 3) 37 Power Dissipation TA = 25 °C (Note 1a) 31 Power Dissipation TA = 25 °C (Note 1b) 1.6 Operating and Storage Junction Temperature Range -55 to +150 A mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient (Note 1) 4.0 (Note 1a) 78 °C/W Package Marking and Ordering Information Device Marking FDS89141 Device FDS89141 ©2010 Fairchild Semiconductor Corporation FDS89141 Rev.C Package SO-8 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 2500 units www.fairchildsemi.com FDS89141 Dual N-Channel PowerTrench® MOSFET December 2010 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4 V 100 V 69 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C VGS = 10 V, ID = 3.5 A 47 62 rDS(on) Static Drain to Source On Resistance VGS = 6 V, ID = 2.8 A 63 100 VGS = 10 V, ID = 3.5 A, TJ = 125 °C 81 107 gFS Forward Transconductance 2 3.1 -9 VDS = 10 V, ID = 3.5 A mV/°C 14.7 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 50 V, VGS = 0 V, f = 1MHz 299 398 pF 70 93 pF 4.7 7 pF Ω 1.0 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge VGS = 0 V to 10 V VGS = 0 V to 5 V VDD = 50 V, ID = 3.5 A, VGS = 10 V, RGEN = 6 Ω Qg(TOT) Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 50 V, ID = 3.5 A 5 10 1.4 10 ns ns 9.8 20 ns 2.2 10 ns 5.1 7.1 nC 2.9 4.1 nC 1.4 nC 1.3 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 3.5 A (Note 2) 0.8 1.3 VGS = 0 V, IS = 2 A (Note 2) 0.8 1.2 33 53 ns 23 37 nC IF = 3.5 A, di/dt = 100 A/μs V NOTES: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78°C/W when mounted on a 1 in2 pad of 2 oz copper b) 135°C/W when mounted on a minimun pad 2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. 3. Starting TJ = 25°C, L = 3.0 mH, IAS = 5.0 A, VDD = 100 V, VGS = 10V. ©2010 Fairchild Semiconductor Corporation FDS89141 Rev. C 2 www.fairchildsemi.com FDS89141 Dual N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 5.0 VGS = 10 V VGS = 7 V 15 ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 18 VGS = 6 V 12 VGS = 5.5 V 9 6 VGS = 5 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 3 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 4.5 4.0 VGS = 5 V 3.5 VGS = 5.5 V 3.0 VGS = 6 V 2.5 2.0 VGS = 7 V 1.5 1.0 0.5 VGS = 10 V 0 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 15 18 400 ID = 3.5 A VGS = 10 V 1.8 rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 12 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.0 ID = 3.5 A 200 TJ = 125 oC 100 TJ = 25 oC 0 100 125 150 4 5 IS, REVERSE DRAIN CURRENT (A) VDS = 5 V 12 9 = 150 oC 6 TJ = 25 oC 3 TJ = 3 4 5 -55 oC 6 7 9 10 VGS = 0 V 10 TJ = 150 oC TJ = 25 oC 1 TJ = -55 oC 0.1 0.2 8 VGS, GATE TO SOURCE VOLTAGE (V) 0.4 0.6 0.8 1.0 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDS89141 Rev. C 8 20 15 2 7 Figure 4. On-Resistance vs Gate to Source Voltage PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX TJ 6 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On-Resistance vs Junction Temperature 18 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 300 TJ, JUNCTION TEMPERATURE (oC) ID, DRAIN CURRENT (A) 9 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics 0 6 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDS89141 Dual N-Channel PowerTrench® MOSFET Typical Characteristics ( N-Channel) TJ = 25°C unless otherwise noted FDS89141 Dual N-Channel PowerTrench® MOSFET Typical Characteristics ( N-Channel) TJ = 25°C unless otherwise noted 400 VDD = 25 V ID = 3.5 A Ciss 8 100 VDD = 50 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 6 VDD = 75 V 4 Coss 10 2 0 0 1 2 3 4 5 1 0.1 6 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 4 3 ID, DRAIN CURRENT (A) 4 IAS, AVALANCHE CURRENT (A) Crss f = 1 MHz VGS = 0 V TJ = 25 oC TJ = 100 oC 2 TJ = 125 oC VGS = 10 V 3 2 Package Limited VGS = 6 V 1 o RθJA = 78 C/W 1 0.01 0.1 1 0 25 4 50 125 150 Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 600 P(PK), PEAK TRANSIENT POWER (W) 20 10 100 us ID, DRAIN CURRENT (A) 100 o Figure 9. Unclamped Inductive Switching Capability 1 ms 1 0.1 75 TA, Ambient TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) 10 ms THIS AREA IS LIMITED BY rDS(on) 100 ms SINGLE PULSE TJ = MAX RATED 1s RθJA = 135 oC/W 10 s 0.01 TA = 25 oC 0.005 0.1 DC 1 10 100 400 TA = 25 oC 100 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 2 10 10 3 10 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2010 Fairchild Semiconductor Corporation FDS89141 Rev. C SINGLE PULSE RθJA = 135 oC/W Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 135 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDS89141 Rev. C 5 www.fairchildsemi.com FDS89141 Dual N-Channel PowerTrench® MOSFET Typical Characteristics ( N-Channel) TJ = 25°C unless otherwise noted tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I51 ©2010 Fairchild Semiconductor Corporation FDS89141 Rev. C 6 www.fairchildsemi.com FDS89141 Dual N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower™ F-PFS™ The Power Franchise® PowerTrench® Auto-SPM™ PowerXS™ The Right Technology for Your Success™ FRFET® ® Build it Now™ Global Power ResourceSM Programmable Active Droop™ Green FPS™ CorePLUS™ QFET® QS™ Green FPS™ e-Series™ CorePOWER™ TinyBoost™ Gmax™ CROSSVOLT™ Quiet Series™ TinyBuck™ GTO™ CTL™ RapidConfigure™ TinyCalc™ IntelliMAX™ Current Transfer Logic™ ™ TinyLogic® ISOPLANAR™ DEUXPEED® TINYOPTO™ Dual Cool™ Saving our world, 1mW/W/kW at a time™ MegaBuck™ TinyPower™ EcoSPARK® SignalWise™ MICROCOUPLER™ TinyPWM™ EfficentMax™ SmartMax™ MicroFET™ TinyWire™ ESBC™ SMART START™ MicroPak™ TriFault Detect™ ® SPM MicroPak2™ ® TRUECURRENT™* STEALTH™ MillerDrive™ μSerDes™ ® ® SuperFET MotionMax™ Fairchild ® SuperSOT™-3 Motion-SPM™ Fairchild Semiconductor SuperSOT™-6 OptiHiT™ FACT Quiet Series™ UHC® SuperSOT™-8 OPTOLOGIC® FACT® ® ® Ultra FRFET™ ® OPTOPLANAR SupreMOS FAST ® UniFET™ SyncFET™ FastvCore™ VCX™ Sync-Lock™ FETBench™ VisualMax™ ®* FlashWriter® * PDP SPM™ XS™ FPS™ Power-SPM™