MX26LV008T/B
Macronix NBit TM Memory Family
8M-BIT [1M x 8] CMOS SINGLE VOLTAGE
3V ONLY HIGH SPEED eLiteFlashTM MEMORY
FEATURES
• Extended single - supply voltage range 3.0V to 3.6V
• 1,048,576 x 8
• Single power supply operation
- 3.0V only operation for read, erase and program
operation
• Fast access time: 55/70ns
• Low power consumption
- 30mA maximum active current
- 30uA typical standby current
• Command register architecture
- Byte Programming (55us typical)
- Sector Erase (Sector structure 16K-Bytex1,
8K-Bytex2, 32K-Bytex1, and 64K-Byte x15)
• Auto Erase (chip & sector) and Auto Program
- Automatically erase any combination of sectors with
Erase Suspend capability.
- Automatically program and verify data at specified
address
• Status Reply
- Data# polling & Toggle bit for detection of program
and erase operation completion.
• Ready/Busy# pin (RY/BY#)
- Provides a hardware method of detecting program or
erase operation completion.
• 2,000 minimum erase/program cycles
• Latch-up protected to 100mA from -1V to VCC+1V
• Package type:
- 40-pin TSOP
• Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash
• 20 years data retention
GENERAL DESCRIPTION
The MX26LV008T/B is a 8-mega bit Flash memory organized as 1M bytes of 8 bits. MXIC's Flash memories
offer the most cost-effective and reliable read/write nonvolatile random access memory. The MX26LV008T/B
is packaged in 40-pin TSOP. It is designed to be reprogrammed and erased in system or in standard EPROM
programmers.
TTL level control inputs and fixed power supply levels
during erase and programming, while maintaining maximum EPROM compatibility.
The standard MX26LV008T/B offers access time as fast
as 55ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention,
the MX26LV008T/B has separate chip enable (CE#) and
output enable (OE#) controls.
MXIC Flash technology reliably stores memory contents
even after 2,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and program operations produces reliable cycling. The MX26LV008T/B uses a 3.0V~3.6V VCC supply to perform the High Reliability Erase and auto Program/Erase algorithms.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX26LV008T/B uses a command register to manage
this functionality. The command register allows for 100%
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC + 1V.
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MX26LV008T/B
PIN CONFIGURATIONS
40 TSOP (Standard Type) (10mm x 20mm)
A16
A15
A14
A13
A12
A11
A9
A8
WE#
RESET#
NC
RY/BY#
A18
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
MX26LV008T/B
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
A17
GND
NC
A19
A10
Q7
Q6
Q5
Q4
VCC
VCC
NC
Q3
Q2
Q1
Q0
OE#
GND
CE#
A0
PIN DESCRIPTION
SYMBOL PIN NAME
A0~A19
Address Input
Q0~Q7
Data Input/Output
CE#
Chip Enable Input
WE#
Write Enable Input
RESET#
Hardware Reset Pin
OE#
Output Enable Input
RY/BY#
Ready/Busy# Output
VCC
Power Supply Pin (3.0V~3.6V)
GND
Ground Pin
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MX26LV008T/B
BLOCK STRUCTURE
Table 1: MX26LV008T SECTOR ARCHITECTURE
Sector
Sector Size
Address range
Sector Address
A19 A18 A17 A16 A15 A14 A13
SA0
64Kbytes
00000h-0FFFFh
0
0
0
0
X
X
X
SA1
64Kbytes
10000h-1FFFFh
0
0
0
1
X
X
X
SA2
64Kbytes
20000h-2FFFFh
0
0
1
0
X
X
X
SA3
64Kbytes
30000h-3FFFFh
0
0
1
1
X
X
X
SA4
64Kbytes
40000h-4FFFFh
0
1
0
0
X
X
X
SA5
64Kbytes
50000h-5FFFFh
0
1
0
1
X
X
X
SA6
64Kbytes
60000h-6FFFFh
0
1
1
0
X
X
X
SA7
64Kbytes
70000h-7FFFFh
0
1
1
1
X
X
X
SA8
64Kbytes
80000h-8FFFFh
1
0
0
0
X
X
X
SA9
64Kbytes
90000h-9FFFFh
1
0
0
1
X
X
X
SA10
64Kbytes
A0000h-AFFFFh
1
0
1
0
X
X
X
SA11
64Kbytes
B0000h-BFFFFh
1
0
1
1
X
X
X
SA12
64Kbytes
C0000h-CFFFFh
1
1
0
0
X
X
X
SA13
64Kbytes
D0000h-DFFFFh
1
1
0
1
X
X
X
SA14
64Kbytes
E0000h-EFFFFh
1
1
1
0
X
X
X
SA15
32Kbytes
F0000h-F7FFFh
1
1
1
1
0
X
X
SA16
8Kbytes
F8000h-F9FFFh
1
1
1
1
1
0
0
SA17
8Kbytes
FA000h-FBFFFh
1
1
1
1
1
0
1
SA18
16kbytes
FC000h-FFFFFh
1
1
1
1
1
1
X
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MX26LV008T/B
Table 2: MX26LV008B SECTOR ARCHITECTURE
Sector
Sector Size
Address range
Sector Address
A19 A18 A17 A16 A15 A14 A13
SA0
16Kbytes
00000h-03FFFh
0
0
0
0
0
0
X
SA1
8Kbytes
04000h-05FFFh
0
0
0
0
0
1
0
SA2
8Kbytes
06000h-07FFFh
0
0
0
0
0
1
1
SA3
32Kbytes
08000h-0FFFFh
0
0
0
0
1
X
X
SA4
64Kbytes
10000h-1FFFFh
0
0
0
1
X
X
X
SA5
64Kbytes
20000h-2FFFFh
0
0
1
0
X
X
X
SA6
64Kbytes
30000h-3FFFFh
0
0
1
1
X
X
X
SA7
64Kbytes
40000h-4FFFFh
0
1
0
0
X
X
X
SA8
64Kbytes
50000h-5FFFFh
0
1
0
1
X
X
X
SA9
64Kbytes
60000h-6FFFFh
0
1
1
0
X
X
X
SA10
64Kbytes
70000h-7FFFFh
0
1
1
1
X
X
X
SA11
64Kbytes
80000h-8FFFFh
1
0
0
0
X
X
X
SA12
64Kbytes
90000h-9FFFFh
1
0
0
1
X
X
X
SA13
64Kbytes
A0000h-AFFFFh
1
0
1
0
X
X
X
SA14
64Kbytes
B0000h-BFFFFh
1
0
1
1
X
X
X
SA15
64Kbytes
C0000h-CFFFFh
1
1
0
0
X
X
X
SA16
64Kbytes
D0000h-DFFFFh
1
1
0
1
X
X
X
SA17
64Kbytes
E0000h-EFFFFh
1
1
1
0
X
X
X
SA18
64kbytes
F0000h-FFFFFh
1
1
1
1
X
X
X
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MX26LV008T/B
BLOCK DIAGRAM
CE#
OE#
WE#
RESET#
CONTROL
INPUT
HIGH VOLTAGE
LOGIC
LATCH
BUFFER
Y-DECODER
AND
X-DECODER
ADDRESS
A0-A19
PROGRAM/ERASE
WRITE
STATE
MACHINE
(WSM)
STATE
REGISTER
MX26LV008T/B
FLASH
ARRAY
Y-PASS GATE
SENSE
AMPLIFIER
PGM
DATA
HV
ARRAY
SOURCE
HV
COMMAND
DATA
DECODER
COMMAND
DATA LATCH
PROGRAM
DATA LATCH
Q0-Q7
I/O BUFFER
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MX26LV008T/B
write commands to the command register using standard microprocessor write timings. The device will automatically pre-program and verify the entire array. Then
the device automatically times the erase pulse width,
provides the erase verification, and counts the number
of sequences. A status bit toggling between consecutive read cycles provides feedback to the user as to the
status of the erasing operation.
AUTOMATIC PROGRAMMING
The MX26LV008T/B is byte programmable using the Automatic Programming algorithm. The Automatic Programming algorithm makes the external system do not
need to have time out sequence nor to verify the data
programmed. The typical chip programming time at room
temperature of the MX26LV008T/B is less than 35 seconds.
Register contents serve as inputs to an internal statemachine which controls the erase and programming circuitry. During write cycles, the command register internally latches address and data needed for the programming and erase operations. During a system write cycle,
addresses are latched on the falling edge, and data are
latched on the rising edge of WE# or CE#, whichever
happens first.
AUTOMATIC PROGRAMMING ALGORITHM
MXIC's Automatic Programming algorithm requires the
user to only write program set-up commands (including
2 unlock write cycle and A0H) and a program command
(program data and address). The device automatically
times the programming pulse width, provides the program verification, and counts the number of sequences.
A status bit similar to DATA# polling and a status bit
toggling between consecutive read cycles, provide feedback to the user as to the status of the programming
operation. Refer to write operation status, table 7, for more
information on these status bits.
MXIC's Flash technology combines years of EPROM
experience to produce the highest levels of quality, reliability, and cost effectiveness. The MX26LV008T/B electrically erases all bits simultaneously using FowlerNordheim tunneling. The bytes are programmed by using the EPROM programming mechanism of hot electron injection.
AUTOMATIC CHIP ERASE
During a program cycle, the state-machine will control
the program sequences and command register will not
respond to any command set. During a Sector Erase
cycle, the command register will only respond to Erase
Suspend command. After Erase Suspend is completed,
the device stays in read mode. After the state machine
has completed its task, it will allow the command register to respond to its full command set.
The entire chip is bulk erased using 10 ms erase pulses
according to MXIC's Automatic Chip Erase algorithm.
Typical erasure at room temperature is accomplished in
less than 40 second. The Automatic Erase algorithm
automatically programs the entire array prior to electrical erase. The timing and verification of electrical erase
are controlled internally within the device.
AUTOMATIC SELECT
AUTOMATIC SECTOR ERASE
The auto select mode provides manufacturer and device identification, through identifier codes output on
Q7~Q0. This mode is mainly adapted for programming
equipment on the device to be programmed with its programming algorithm. When programming by high voltage
method, automatic select mode requires VID (11V to 12V)
on address pin A9 and other address pin A6, A1 and A0
as referring to Table 3. In addition, to access the automatic select codes in-system, the host can issue the
automatic select command through the command register without requiring VID, as shown in table 4.
The MX26LV008T/B is sector(s) erasable using MXIC's
Auto Sector Erase algorithm. The Automatic Sector
Erase algorithm automatically programs the specified
sector(s) prior to electrical erase. The timing and verification of electrical erase are controlled internally within
the device. An erase operation can erase one sector,
multiple sectors, or the entire device.
AUTOMATIC ERASE ALGORITHM
MXIC's Automatic Erase algorithm requires the user to
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MX26LV008T/B
TABLE 3. MX26LV008T/B AUTO SELECT MODE OPERATION
A19 A12
Description
CE# OE# WE#
|
A9
|
A13 A10
A8
A6
A5
|
|
A7
A2
A1
A0
Q7~Q0
Manufacturer Code
L
L
H
X
X
VID
X
L
X
L
L
C2H
Read
Device ID
L
L
H
X
X
VID
X
L
X
L
H
3EH
Silicon
(Top Boot Block)
ID
Device ID
L
L
H
X
X
VID
X
L
X
L
H
37H
(Bottom Boot Block)
NOTE:SA=Sector Address, X=Don't Care, L=Logic Low, H=Logic High
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MX26LV008T/B
COMMAND DEFINITIONS
read mode. Table 4 defines the valid register command
sequences. Note that the Erase Suspend (B0H) and
Erase Resume (30H) commands are valid only while the
Sector Erase operation is in progress.
Device operations are selected by writing specific address and data sequences into the command register.
Writing incorrect address and data values or writing them
in the improper sequence will reset the device to the
TABLE 4. MX26LV008T/B COMMAND DEFINITIONS
First Bus
Command
Bus Cycle
Cycle Addr
Second Bus
Third Bus
Fourth Bus
Fifth Bus
Sixth Bus
Cycle
Cycle
Cycle
Cycle
Cycle
Data Addr
Reset
1
XXXH F0H
Read
1
RA
Data Addr
Data Addr
Data
Addr
Data Addr
Data
RD
Read
Top Boot
4
555H AAH 2AAH
55H
555H
90H ADI
DDI
Silicon ID
Bottom Boot
4
555H AAH 2AAH
55H
555H
90H ADI
DDI
Program
4
555H AAH 2AAH
55H
555H
A0H PA
PD
Chip Erase
6
555H AAH 2AAH
55H
555H
80H 555H AAH
2AAH 55H
555H 10H
Sector Erase
6
555H AAH 2AAH
55H
555H
80H 555H AAH
2AAH 55H
SA
30H
Note:
1. ADI = Address of Device identifier; A1=0, A0 = 0 for manufacturer code,A1=0, A0 = 1 for device code. A2-A18=do not care.
(Refer to table 3)
DDI = Data of Device identifier : C2H for manufacture code, 3E/37 (Top/Bottom Boot) for device code.
X = X can be VIL or VIH
RA=Address of memory location to be read.
RD=Data to be read at location RA.
2. PA = Address of memory location to be programmed.
PD = Data to be programmed at location PA.
SA = Address of the sector.
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MX26LV008T/B
TABLE 5. MX26LV008T/B BUS OPERATION
ADDRESS
DESCRIPTION
CE#
OE#
WE#
RESET# A19 A12 A9
A13 A10
A8
A7
A6
A5
A1
A0
Q0~Q7
A2
Read
L
L
H
H
AIN
Dout
Write
L
H
L
H
AIN
DIN(3)
Reset
X
X
X
L
X
High Z
Output Disable
L
H
H
H
X
High Z
Vcc±0.3V
X
X
Vcc±0.3V
X
High Z
Standby
NOTES:
1. Manufacturer and device codes may also be accessed via a command register write sequence. Refer to Table 4.
2. VID is the Silicon-ID-Read high voltage, 11V to 12V.
3. Refer to Table 5 for valid Data-In during a write operation.
4. X can be VIL or VIH.
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MX26LV008T/B
Characteristics" section contains timing specification
table and timing diagrams for write operations.
REQUIREMENTS FOR READING ARRAY
DATA
To read array data from the outputs, the system must
drive the CE# and OE# pins to VIL. CE# is the power
control and selects the device. OE# is the output control
and gates array data to the output pins. WE# should remain
at VIH.
STANDBY MODE
When using both pins of CE# and RESET#, the device
enter CMOS Standby with both pins held at Vcc ± 0.3V.
If CE# and RESET# are held at VIH, but not within the
range of VCC ± 0.3V, the device will still be in the standby
mode, but the standby current will be larger. During Auto
Algorithm operation, Vcc active current (Icc2) is required
even CE# = "H" until the operation is completed. The
device can be read with standard access time (tCE) from
either of these standby modes, before it is ready to read
data.
The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory content
occurs during the power transition. No command is
necessary in this mode to obtain array data. Standard
microprocessor read cycles that assert valid address on
the device address inputs produce valid data on the device
data outputs. The device remains enabled for read access
until the command register contents are altered.
OUTPUT DISABLE
With the OE# input at a logic high level (VIH), output
from the devices are disabled. This will cause the output
pins to be in a high impedance state.
WRITE COMMANDS/COMMAND SEQUENCES
To program data to the device or erase sectors of memory
, the system must drive WE# and CE# to VIL, and OE#
to VIH.
RESET# OPERATION
The "Byte Program Command Sequence" section has
details on programming data to the device.
The RESET# pin provides a hardware method of resetting
the device to reading array data. When the RESET# pin
is driven low for at least a period of tRP, the device
immediately terminates any operation in progress,
tristates all output pins, and ignores all read/write
commands for the duration of the RESET# pulse. The
device also resets the internal state machine to reading
array data. The operation that was interrupted should be
reinitiated once the device is ready to accept another
command sequence, to ensure data integrity
An erase operation can erase one sector, multiple sectors
, or the entire device. Table indicates the address space
that each sector occupies. A "sector address" consists
of the address bits required to uniquely select a sector.
The "Writing specific address and data commands or
sequences into the command register initiates device
operations. Table 1 defines the valid register command
sequences. Writing incorrect address and data values or
writing them in the improper sequence resets the device
to reading array data. Section has details on erasing a
sector or the entire chip, or suspending/resuming the erase
operation.
Current is reduced for the duration of the RESET# pulse.
When RESET# is held at VSS ± 0.3V, the device draws
CMOS standby current (ICC4). If RESET# is held at VIL
but not within VSS ± 0.3V, the standby current will be
greater.
After the system writes the autoselect command
sequence, the device enters the autoselect mode. The
system can then read autoselect codes from the internal
register (which is separate from the memory array) on
Q7-Q0. Standard read cycle timings apply in this mode.
Refer to the Autoselect Mode and Autoselect Command
Sequence section for more information.
The RESET# pin may be tied to system reset circuitry.
A system reset would that also reset the Flash memory,
enabling the system to read the boot-up firm-ware from
the Flash memory.
If RESET# is asserted during a program or erase
operation, the RY/BY# pin remains a "0" (busy) until the
internal reset operation is complete, which requires a
ICC2 in the DC Characteristics table represents the active
current specification for the write mode. The "AC
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MX26LV008T/B
time of tREADY (during Embedded Algorithms). The
system can thus monitor RY/BY# to determine whether
the reset operation is complete. If RESET# is asserted
when a program or erase operation is completed within a
time of tREADY (not during Embedded Algorithms). The
system can read data tRH after the RESET# pin returns
to VIH.
"unlock" write cycles. These are followed by writing the
"set-up" command 80H. Two more "unlock" write cycles
are then followed by the chip erase command 10H or
sector erase command 30H.
The Automatic Chip Erase does not require the device
to be entirely pre-programmed prior to executing the Automatic Chip Erase. Upon executing the Automatic Chip
Erase, the device will automatically program and verify
the entire memory for an all-zero data pattern. When the
device is automatically verified to contain an all-zero
pattern, a self-timed chip erase and verify begin. The
erase and verify operations are completed when the data
on Q7 is "1" at which time the device returns to the
Read mode. The system is not required to provide any
control or timing during these operations.
Refer to the AC Characteristics tables for RESET#
parameters and to Figure 14 for the timing diagram.
READ/RESET COMMAND
The read or reset operation is initiated by writing the
read/reset command sequence into the command register. Microprocessor read cycles retrieve array data.
The device remains enabled for reads until the command
register contents are altered.
When using the Automatic Chip Erase algorithm, note
that the erase automatically terminates when adequate
erase margin has been achieved for the memory array
(no erase verification command is required).
If program-fail or erase-fail happen, the write of F0H will
reset the device to abort the operation. A valid command must then be written to place the device in the
desired state.
If the Erase operation was unsuccessful, the data on
Q5 is "1"(see Table 7), indicating the erase operation
exceed internal timing limit.
The automatic erase begins on the rising edge of the
last WE# or CE# pulse, whichever happens first in the
command sequence and terminates when the data on
Q7 is "1" and the data on Q6 stops toggling for two consecutive read cycles, at which time the device returns
to the Read mode.
SILICON-ID READ COMMAND
Flash memories are intended for use in applications where
the local CPU alters memory contents. As such, manufacturer and device codes must be accessible while the
device resides in the target system. PROM programmers typically access signature codes by raising A9 to
a high voltage (VID). However, multiplexing high voltage onto address lines is not generally desired system
design practice.
The MX26LV008T/B contains a Silicon-ID-Read operation to supple traditional PROM programming methodology. The operation is initiated by writing the read silicon
ID command sequence into the command register. Following the command write, a read cycle with A1=VIL,
A0=VIL retrieves the manufacturer code of C2H. A read
cycle with A1=VIL, A0=VIH returns the device code of
3EH for MX26LV008T, 37H for MX26LV008B.
SET-UP AUTOMATIC CHIP/SECTOR ERASE
COMMANDS
Chip erase is a six-bus cycle operation. There are two
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MX26LV008T/B
TABLE 6. SILICON ID CODE
Pins
A0
A1
Q7
Q6
Q5
Q4
Q3
Q2
Q1
Q0
Code(Hex)
Manufacture code
VIL
VIL
1
1
0
0
0
0
1
0
C2H
Device code
VIH
VIL
0
0
1
1
1
1
1
0
3EH
VIH
VIL
0
0
1
1
0
1
1
1
37H
for MX26LV008T
Device code
for MX26LV008B
READING ARRAY DATA
RESET COMMAND
The device is automatically set to reading array data
after device power-up. No commands are required to retrieve data. The device is also ready to read array data
after completing an Automatic Program or Automatic
Erase algorithm.
Writing the reset command to the device resets the
device to reading array data. Address bits are don't care
for this command.
The reset command may be written between the sequence cycles in an erase command sequence before
erasing begins. This resets the device to reading array
data. Once erasure begins, however, the device ignores
reset commands until the operation is complete.
After the device accepts an Erase Suspend command,
the device enters the Erase Suspend mode. The system can read array data using the standard read timings, except that if it reads at an address within erasesuspended sectors, the device outputs status data. After completing a programming operation in the Erase
Suspend mode, the system may once again read array
data with the same exception. See erase Suspend/Erase
Resume Commands” for more infor-mation on this mode.
The system must issue the reset command to re-enable the device for reading array data if Q5 goes high, or
while in the autoselect mode. See the "Reset Command"
section, next.
The reset command may be written between the sequence cycles in a program command sequence be-fore
programming begins. This resets the device to reading
array data (also applies to programming in Erase
Suspend mode). Once programming begins, however,
the device ignores reset commands until the operation
is complete.
The reset command may be written between the sequence cycles in an SILICON ID READ command
sequence. Once in the SILICON ID READ mode, the
reset command must be written to return to reading array
data (also applies to SILICON ID READ during Erase
Suspend).
If Q5 goes high during a program or erase operation,
writing the reset command returns the device to reading array data (also applies during Erase Suspend).
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MX26LV008T/B
followed by the program set-up command. The program
address and data are written next, which in turn initiate
the Embedded Program algorithm. The system is not
required to provide further controls or timings. The device automatically generates the program pulses and
verifies the programmed cell margin. Table 1 shows the
address and data requirements for the byte program
command sequence.
SECTOR ERASE COMMANDS
The Automatic Sector Erase does not require the device to be entirely pre-programmed prior to executing
the Automatic Sector Erase Set-up command and Automatic Sector Erase command. Upon executing the
Automatic Sector Erase command, the device will automatically program and verify the sector(s) memory for
an all-zero data pattern. The system is not required to
provide any control or timing during these operations.
When the Embedded Program algorithm is complete,
the device then returns to reading array data and addresses are no longer latched. The system can determine the status of the program operation by using Q7,
Q6, or RY/BY#. See "Write Operation Status" for information on these status bits.
When the sector(s) is automatically verified to contain
an all-zero pattern, a self-timed sector erase and verify
begin. The erase and verify operations are complete
when the data on Q7 is "1" and the data on Q6 stops
toggling for two consecutive read cycles, at which time
the device returns to the Read mode. The system is not
required to provide any control or timing during these
operations.
Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a hardware reset immediately terminates the programming
operation. The Byte Program command sequence should
be reinitiated once the device has reset to reading array
data, to ensure data integrity.
When using the Automatic sector Erase algorithm, note
that the erase automatically terminates when adequate
erase margin has been achieved for the memory array
(no erase verification command is required). Sector
erase is a six-bus cycle operation. There are two "unlock" write cycles. These are followed by writing the
set-up command 80H. Two more "unlock" write cycles
are then followed by the sector erase command 30H.
The sector address is latched on the falling edge of WE#
or CE#, whichever happens later, while the command
(data) is latched on the rising edge of WE# or CE#, whichever happens first. Sector addresses selected are
loaded into internal register on the sixth falling edge of
WE# or CE#, whichever happens later. Each successive sector load cycle started by the falling edge of WE#
or CE#, whichever happens later must begin within 50us
from the rising edge of the preceding WE# or CE#, whichever happens first. Otherwise, the loading period ends
and internal auto sector erase cycle starts. (Monitor Q3
to determine if the sector erase timer window is still open,
see section Q3, Sector Erase Timer.) Any command other
than Sector Erase(30H) or Erase Suspend(B0H) during
the time-out period resets the device to read mode.
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed from a
"0" back to a "1". Attempting to do so may halt the operation and set Q5 to "1" ,” or cause the Data# polling
algorithm to indicate the operation was successful. However, a succeeding read will show that the data is still
"0". Only erase operations can convert a "0" to a "1".
WRITE OPERATION STATUS
The device provides several bits to determine the status of a write operation: Q2, Q3, Q5, Q6, Q7, and RY/
BY#. Table 7 and the following subsections describe the
functions of these bits. Q7, RY/BY#, and DQ6 each offer
a method for determining whether a program or erase
operation is complete or in progress. These three bits
are discussed first.
Q7: Data# polling
The Data# polling bit, Q7, indicates to the host sys-tem
whether an Automatic Algorithm is in progress or completed, or whether the device is in Erase Suspend. Data#
polling is valid after the rising edge of the final WE# pulse
in the program or erase command sequence.
BYTE PROGRAM COMMAND SEQUENCE
The device programs one byte of data for each program
operation. The command sequence requires four bus
cycles, and is initiated by writing two unlock write cycles,
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MX26LV008T/B
During the Automatic Program algorithm, the device outputs on Q7 the complement of the datum programmed
to Q7. This Q7 status also applies to programming during Erase Suspend. When the Automatic Program algorithm is complete, the device outputs the datum programmed to Q7. The system must provide the program
address to read valid status information on Q7.
Bit I may be read at any address, and is valid after the
rising edge of the final WE# or CE#, whichever happens
first, in the command sequence (prior to the program or
erase operation), and during the sector time-out.
During an Automatic Program or Erase algorithm operation, successive read cycles to any address cause Q6
to toggle. The system may use either OE# or CE# to
control the read cycles. When the operation is complete,
Q6 stops toggling.
During the Automatic Erase algorithm, Data# polling produces a "0" on Q7. When the Automatic Erase algorithm is complete, or if the device enters the Erase Suspend mode, Data# polling produces a "1" on Q7. This is
analogous to the complement/true datum out-put described for the Automatic Program algorithm: the erase
function changes all the bits in a sector to "1" prior to
this, the device outputs the "complement" or "0". The
system must provide an address within any of the sectors selected for erasure to read valid status information
on Q7.
When the device is actively erasing (that is, the Automatic Erase algorithm is in progress), Q6 toggling. However, the system must also use Q2 to determine which
sectors are erasing. Alternatively, the system can use
Q7.
Q6 stops toggling once the Automatic Program algorithm
is complete.
When the system detects Q7 has changed from the
complement to true data, it can read valid data at Q7-Q0
on the following read cycles. This is because Q7 may
change asynchronously with Q0-Q6 while Output Enable (OE#) is asserted low.
Table 7 shows the outputs for Toggle Bit I on Q6.
Q2:Toggle Bit II
The "Toggle Bit II" on Q2, when used with Q6, indicates
whether a particular sector is actively erasing (that is,
the Automatic Erase algorithm is in process), or whether
that sector is erase-suspended. Toggle Bit II is valid
after the rising edge of the final WE# or CE#, whichever
happens first, in the command sequence.
RY/BY#:Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin that
indicates whether an Automatic Erase/Program algorithm
is in progress or complete. The RY/BY# status is valid
after the rising edge of the final WE# or CE#, whichever
happens first, in the command sequence. Since RY/BY#
is an open-drain output, several RY/BY# pins can be tied
together in parallel with a pull-up resistor to Vcc.
If the output is low (Busy), the device is actively erasing
or programming. (This includes programming in the Erase
Suspend mode.) If the output is high (Ready), the device is ready to read array data (including during the
Erase Suspend mode), or is in the standby mode.
Q2 toggles when the system reads at addresses within
those sectors that have been selected for erasure. (The
system may use either OE# or CE# to control the read
cycles.) But Q2 cannot distinguish whether the sector
is actively erasing or is erase-suspended. Q6, by comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which
sectors are selected for erasure. Thus, both status bits
are required for sectors and mode information. Refer to
Table 7 to compare outputs for Q2 and Q6.
Table 7 shows the outputs for RY/BY# during write operation.
Reading Toggle Bits Q6/ Q2
Whenever the system initially begins reading toggle bit
status, it must read Q7-Q0 at least twice in a row to
determine whether a toggle bit is toggling. Typically, the
system would note and store the value of the toggle bit
after the first read. After the second read, the system
Q6:Toggle BIT I
Toggle Bit I on Q6 indicates whether an Automatic Program or Erase algorithm is in progress or complete. Toggle
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MX26LV008T/B
would compare the new value of the toggle bit with the
first. If the toggle bit is not toggling, the device has completed the program or erase operation. The system can
read array data on Q7-Q0 on the following read cycle.
bination of sectors are bad.
If this time-out condition occurs during the byte programming operation, it specifies that the entire sector containing that byte is bad and this sector maynot be reused, (other sectors are still functional and can be reused).
However, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the system also should note whether the value of Q5 is high
(see the section on Q5). If it is, the system should then
determine again whether the toggle bit is toggling, since
the toggle bit may have stopped toggling just as Q5 went
high. If the toggle bit is no longer toggling, the device
has successfully completed the program or erase operation. If it is still toggling, the device did not complete
the operation successfully, and the system must write
the reset command to return to reading array data.
The time-out condition will not appear if a user tries to
program a non blank location without erasing. Please
note that this is not a device failure condition since the
device was incorrectly used.
The remaining scenario is that system initially determines
that the toggle bit is toggling and Q5 has not gone high.
The system may continue to monitor the toggle bit and
Q5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other system tasks. In
this case, the system must start at the beginning of the
algorithm when it returns to determine the status of the
operation.
Q5
Exceeded Timing Limits
Q5 will indicate if the program or erase time has exceeded the specified limits (internal pulse count). Under
these conditions Q5 will produce a "1". This time-out
condition indicates that the program or erase cycle was
not successfully completed. Data# polling and Toggle
Bit are the only operating functions of the device under
this condition.
If this time-out condition occurs during sector erase operation, it specifies that a particular sector is bad and it
may not be reused. However, other sectors are still functional and may be used for the program or erase operation. The device must be reset to use other sectors.
Write the Reset command sequence to the device, and
then execute program or erase command sequence. This
allows the system to continue to use the other active
sectors in the device.
If this time-out condition occurs during the chip erase
operation, it specifies that the entire chip is bad or com-
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MX26LV008T/B
Table 7. WRITE OPERATION STATUS
Status
Q7
Q6
(Note1)
In
Byte Program in Auto Program Algorithm
Q7#
Q5
Q3
Q2
RY/BY#
N/A
No
0
(Note2)
Toggle
0
Progress
Toggle
Auto Erase Algorithm
Exceeded
Byte Program in Auto Program Algorithm
0
Toggle
0
1
Toggle
0
Q7#
Toggle
1
N/A
No
0
Time
Limits
Toggle
Auto Erase Algorithm
0
Toggle
1
1
Toggle
0
Note:
1. Q7 and Q2 require a valid address when reading status information. Refer to the appropriate subsection for further
details.
2. Q5 switches to '1' when an Auto Program or Auto Erase operation has exceeded the maximum timing limits.
See "Q5 : Exceeded Timing Limits" for more information.
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MX26LV008T/B
Q3
Sector Erase Timer
POWER SUPPLY DECOUPLING
In order to reduce power switching effect, each device
should have a 0.1uF ceramic capacitor connected between its VCC and GND.
After the completion of the initial sector erase command
sequence, the sector erase time-out will begin. Q3 will
remain low until the time-out is complete. Data# polling
and Toggle Bit are valid after the initial sector erase command sequence.
POWER-UP SEQUENCE
The MX26LV008T/B powers up in the Read only mode.
In addition, the memory contents may only be altered
after successful completion of the predefined command
sequences.
If Data# polling or the Toggle Bit indicates the device has
been written with a valid erase command, Q3 may be
used to determine if the sector erase timer window is
still open. If Q3 is high ("1") the internally controlled
erase cycle has begun; attempts to write subsequent
commands to the device will be ignored until the erase
operation is completed as indicated by Data# polling or
Toggle Bit. If Q3 is low ("0"), the device will accept
additional sector erase commands. To insure the command has been accepted, the system software should
check the status of Q3 prior to and following each subsequent sector erase command. If Q3 were high on the
second status check, the command may not have been
accepted.
DATA PROTECTION
The MX26LV008T/B is designed to offer protection
against accidental erasure or programming caused by
spurious system level signals that may exist during power
transition. During power up the device automatically resets the state machine in the Read mode. In addition,
with its control register architecture, alteration of the
memory contents only occurs after successful completion of specific command sequences. The device also
incorporates several features to prevent inadvertent write
cycles resulting from VCC power-up and power-down transition or system noise.
WRITE PULSE "GLITCH" PROTECTION
Noise pulses of less than 5ns(typical) on CE# or WE#
will not initiate a write cycle.
LOGICAL INHIBIT
Writing is inhibited by holding any one of OE# = VIL,
CE# = VIH or WE# = VIH. To initiate a write cycle CE#
and WE# must be a logical zero while OE# is a logical
one.
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MX26LV008T/B
ABSOLUTE MAXIMUM RATINGS
OPERATING RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . ..... -65oC to +150oC
Ambient Temperature
with Power Applied. . . . . . . . . . . . . .... -65oC to +125oC
Voltage with Respect to Ground
VCC (Note 1) . . . . . . . . . . . . . . . . . -0.5 V to +4.0 V
A9, OE#, and
RESET# (Note 2) . . . . . . . . . . . . . . . -0.5 V to +12 V
All other pins (Note 1) . . . . . . . -0.5 V to VCC +0.5 V
Output Short Circuit Current (Note 3) . . . . . . 200 mA
Commercial (C) Devices
Ambient Temperature (TA ). . . . . . . . . . . . 0° C to +70° C
VCC Supply Voltages
VCC for full voltage range. . . . . . . . . . . +3.0 V to 3.6 V
Operating ranges define those limits between which the
functionality of the device is guaranteed.
Notes:
1. Minimum DC voltage on input or I/O pins is -0.5 V.
During voltage transitions, input or I/O pins may overshoot VSS to -2.0 V for periods of up to 20 ns. Maximum DC voltage on input or I/O pins is VCC +0.5 V.
During voltage transitions, input or I/O pins may overshoot to VCC +2.0 V for periods up to 20 ns.
2. Minimum DC input voltage on pins A9, OE#, and
RESET# is -0.5 V. During voltage transitions, A9, OE#,
and RESET# may overshoot VSS to -2.0 V for periods
of up to 20 ns. Maximum DC input voltage on pin A9 is
+12V which may overshoot to 13.5V for periods up to
20 ns.
3. No more than one output may be shorted to ground at
a time. Duration of the short circuit should not be
greater than one second.
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device.
This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational sections of this data sheet is
not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect
device reliability.
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MX26LV008T/B
CAPACITANCE TA = 25oC, f = 1.0 MHz
SYMBOL
CIN1
CIN2
COUT
PARAMETER
Input Capacitance
Control Pin Capacitance
Output Capacitance
MIN.
TYP
MAX.
8
12
12
UNIT
pF
pF
pF
CONDITIONS
VIN = 0V
VIN = 0V
VOUT = 0V
Table 8. DC CHARACTERISTICS TA = 0oC to 70oC, VCC = 3.0V ~ 3.6V
Symbol PARAMETER
MIN.
TYP
MAX.
UNIT
CONDITIONS
ILI
Input Leakage Current
±1
uA
VIN = VSS to VCC
ILIT
A9 Input Leakage Current
100
uA
VCC=VCC max; A9=12V
ILO
Output Leakage Current
±1
uA
VOUT = VSS to VCC,
VCC = VCC max
ICC1
VCC Active Read Current
20
30
mA
CE#=VIL,
@5MHz
8
14
mA
OE#=VIH
@1MHz
ICC2
VCC Active write Current
26
30
mA
CE#=VIL, OE#=VIH
ICC3
VCC Standby Current
30
100
uA
CE#; RESET#=VCC ± 0.3V
ICC4
VCC Standby Current
30
100
uA
RESET#=VSS ± 0.3V
-0.5
0.8
V
0.7xVCC
VCC+ 0.3
V
11
12
V
VCC=3.3V
0.45
V
IOL = 4.0mA, VCC = VCC min
During Reset
VIL
Input Low Voltage (Note 1)
VIH
Input High Voltage
VID
Voltage for Automative
Select
VOL
Output Low Voltage
VOH1
Output High Voltage(TTL)
VOH2
Output High Voltage
0.85xVCC
IOH = -2mA, VCC =VCC min
VCC-0.4
IOH = -100uA, VCC min
(CMOS)
NOTES:
1. VIL min. = -1.0V for pulse width is equal to or less than 50 ns.
VIL min. = -2.0V for pulse width is equal to or less than 20 ns.
2. VIH max. = VCC + 1.5V for pulse width is equal to or less than 20 ns
If VIH is over the specified maximum value, read operation cannot be guaranteed.
3. Automatic sleep mode enable the low power mode when addresses remain stable for tACC +30ns.
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MX26LV008T/B
AC CHARACTERISTICS TA = 0oC to 70oC, VCC = 3.0V~3.6V
Table 9. READ OPERATIONS
26LV008T/B-55
26LV008T/B-70
SYMBOL PARAMETER
MIN.
MIN.
tRC
Read Cycle Time (Note 1)
55
tACC
Address to Output Delay
55
70
ns
CE#=OE#=VIL
tCE
CE# to Output Delay
55
70
ns
OE#=VIL
tOE
OE# to Output Delay
25
30
ns
CE#=VIL
tDF
OE# High to Output Float (Note1)
0
30
ns
CE#=VIL
tOEH
Output Enable Read
0
0
ns
Hold Time
10
10
ns
0
0
ns
tOH
Toggle and Data# polling
Address to Output hold
MAX.
MAX. UNIT CONDITIONS
70
25
0
ns
CE#=OE#=VIL
TEST CONDITIONS:
NOTE:
• Input pulse levels: 0V/3.0V.
• Input rise and fall times is equal to or less than 5ns.
• Output load: 1 TTL gate + 100pF (Including scope and
jig), for 26LV008T/B-70. 1 TTL gate + 30pF (Including
scope and jig) for 26LV008T/B-55.
• Reference levels for measuring timing: 1.5V.
1. Not 100% tested.
2. tDF is defined as the time at which the output achieves
the open circuit condition and data is no longer driven.
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MX26LV008T/B
SWITCHING TEST CIRCUITS
DEVICE UNDER
2.7K ohm
+3.3V
TEST
CL
6.2K ohm
DIODES=IN3064
OR EQUIVALENT
CL=100pF Including jig capacitance for MX26LV008T/B-70 (30pF for MX26LV008T/B-55)
SWITCHING TEST WAVEFORMS
3.0V
1.5V
INPUT
TEST POINTS
1.5V
OUTPUT
0V
AC TESTING: Inputs are driven at 3.0V for a logic "1" and 0V for a logic "0".
Input pulse rise and fall times are < 5ns.
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MX26LV008T/B
Figure 1. READ TIMING WAVEFORMS
tRC
VIH
Addresses
ADD Valid
VIL
tACC
tCE
CE#
VIH
VIL
WE#
VIH
VIL
tOE
tOEH
tDF
VIH
OE#
VIL
tACC
Outputs
VOH
HIGH Z
tOH
DATA Valid
HIGH Z
VOL
VIH
RESET#
VIL
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MX26LV008T/B
AC CHARACTERISTICS TA = 0oC to 70oC, VCC = 3.0V~3.6V
Table 10. Erase/Program Operations
26LV008T/B-55
26LV008T/B-70
MIN.
SYMBOL
PARAMETER
MIN.
MAX.
MAX.
UNIT
tWC
Write Cycle Time (Note 1)
55
70
ns
tAS
Address Setup Time
0
0
ns
tAH
Address Hold Time
45
45
ns
tDS
Data Setup Time
35
35
ns
tDH
Data Hold Time
0
0
ns
tOES
Output Enable Setup Time
0
0
ns
tGHWL
Read Recovery Time Before Write
0
0
ns
(OE# High to WE# Low)
tCS
CE# Setup Time
0
0
ns
tCH
CE# Hold Time
0
0
ns
tWP
Write Pulse Width
35
35
ns
tWPH
Write Pulse Width High
30
30
ns
tWHWH1
Programming Operation (Note 2)
55 (typ.)
55 (typ.)
us
tWHWH2
Sector Erase Operation (Note 2)
2.4 (typ.)
2.4 (typ.)
sec
tVCS
VCC Setup Time (Note 1)
50
50
us
tRB
Recovery Time from RY/BY#
0
0
ns
tBUSY
Program/Erase Valid to RY/BY# Delay
90
90
ns
tBAL
Sector Address Load Time
50
50
us
NOTES:
1. Not 100% tested.
2. See the "Erase and Programming Performance" section for more information.
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MX26LV008T/B
AC CHARACTERISTICS TA = 0oC to 70oC, VCC = 3.0V~3.6V
Table 11. Alternate CE# Controlled Erase/Program Operations
26LV008T/B-55
26LV008T/B-70
MIN.
SYMBOL
PARAMETER
MIN.
MAX.
MAX.
UNIT
tWC
Write Cycle Time (Note 1)
55
70
ns
tAS
Address Setup Time
0
0
ns
tAH
Address Hold Time
45
45
ns
tDS
Data Setup Time
35
45
ns
tDH
Data Hold Time
0
0
ns
tOES
Output Enable Setup Time
0
0
ns
tGHEL
Read Recovery Time Before Write
0
0
ns
tWS
WE# Setup Time
0
0
ns
tWH
WE# Hold Time
0
0
ns
tCP
CE# Pulse Width
35
35
ns
tCPH
CE# Pulse Width High
30
30
ns
tWHWH1
Programming Operation(note2)
55(Typ.)
55(Typ.)
us
tWHWH2
Sector Erase Operation (note2)
2.4(Typ.)
2.4(Typ.)
sec
NOTE:
1. Not 100% tested.
2. See the "Erase and Programming Performance" section for more information.
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MX26LV008T/B
Figure 2. COMMAND WRITE TIMING WAVEFORM
VCC
Addresses
3V
VIH
ADD Valid
VIL
tAH
tAS
WE#
VIH
VIL
tOES
tWPH
tWP
tCWC
CE#
VIH
VIL
tCS
OE#
tCH
VIH
VIL
tDS
tDH
VIH
Data
DIN
VIL
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MX26LV008T/B
AUTOMATIC PROGRAMMING TIMING WAVEFORM
ing after automatic programming starts. Device outputs
DATA# during programming and DATA# after programming
on Q7.(Q6 is for toggle bit; see toggle bit, Data# polling,
timing waveform)
One byte data is programmed. Verify in fast algorithm
and additional verification by external control are not required because these operations are executed automatically by internal control circuit. Programming completion can be verified by Data# polling and toggle bit check-
Figure 3. AUTOMATIC PROGRAMMING TIMING WAVEFORM
Program Command Sequence(last two cycle)
tWC
555h
Address
Read Status Data (last two cycle)
tAS
PA
PA
PA
tAH
CE#
tCH
tGHWL
OE#
tWHWH1
tWP
WE#
tCS
tWPH
tDS
tDH
A0h
Status
PD
DOUT
Data
tBUSY
tRB
RY/BY#
tVCS
VCC
NOTES:
1.PA=Program Address, PD=Program Data, DOUT is the true data the program address
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MX26LV008T/B
Figure 4. AUTOMATIC PROGRAMMING ALGORITHM FLOWCHART
START
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data A0H Address 555H
Write Program Data/Address
Data# Poll
from system
Increment
Address
No
Verify Byte Ok ?
YES
No
Last Address ?
YES
Auto Program Completed
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MX26LV008T/B
Figure 5. CE# CONTROLLED PROGRAM TIMING WAVEFORM
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
Data# Polling
Address
PA
tWC
tAS
tAH
tWH
WE#
tGHEL
OE#
tCP
tWHWH1 or 2
CE#
tWS
tCPH
tDS
tBUSY
tDH
DQ7 DOUT
Data
tRH
A0 for program
55 for erase
PD for program
30 for sector erase
10 for chip erase
RESET#
RY/BY#
NOTES:
1.PA=Program Address, PD=Program Data, DOUT=Data Out, DQ7=complement of data written to device.
2.Figure indicates the last two bus cycles of the command sequence.
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MX26LV008T/B
AUTOMATIC CHIP ERASE TIMING WAVEFORM
All data in chip are erased. External erase verification is
not required because data is verified automatically by
internal control circuit. Erasure completion can be verified by Data# polling and toggle bit checking after auto-
matic erase starts. Device outputs 0 during erasure
and 1 after erasure on Q7.(Q6 is for toggle bit; see toggle
bit, Data# polling, timing waveform)
Figure 6. AUTOMATIC CHIP ERASE TIMING WAVEFORM
Erase Command Sequence(last two cycle)
tWC
2AAh
Address
Read Status Data
tAS
VA
555h
VA
tAH
CE#
tCH
tGHWL
OE#
tWHWH2
tWP
WE#
tCS
tWPH
tDS
tDH
55h
In
Progress Complete
10h
Data
tBUSY
tRB
RY/BY#
tVCS
VCC
NOTES:
SA=sector address(for Sector Erase), VA=Valid Address for reading status data(see "Write Operation Status").
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Figure 7. AUTOMATIC CHIP ERASE ALGORITHM FLOWCHART
START
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data 80H Address 555H
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data 10H Address 555H
Data Pall from System
NO
Data=FFh ?
YES
Auto Chip Erase Completed
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AUTOMATIC SECTOR ERASE TIMING WAVEFORM
Sector indicated by A12 to A18 are erased. External
erase verify is not required because data are verified
automatically by internal control circuit. Erasure completion can be verified by Data# polling and toggle bit check-
ing after automatic erase starts. Device outputs 0 during erasure and 1 after erasure on Q7.(Q6 is for toggle
bit; see toggle bit, Data# polling, timing waveform)
Figure 8. AUTOMATIC SECTOR ERASE TIMING WAVEFORM
Erase Command Sequence(last two cycle)
tWC
Sector
Address 0
2AAh
Address
Read Status Data
tAS
Sector
Address 1
Sector
Address n
VA
VA
tAH
CE#
tCH
tGHWL
OE#
WE#
tCS
tWHWH2
tBAL
tWP
tWPH
tDS tDH
55h
30h
30h
30h
In
Progress Complete
Data
tBUSY
tRB
RY/BY#
tVCS
VCC
NOTES:
SA=sector address(for Sector Erase), VA=Valid Address for reading status data(see "Write Operation Status").
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Figure 9. AUTOMATIC SECTOR ERASE ALGORITHM FLOWCHART
START
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data 80H Address 555H
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data 30H Sector Address
Last Sector
to Erase
NO
YES
Data Poll from System
Data=FFh
NO
YES
Auto Sector Erase Completed
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MX26LV008T/B
WRITE OPERATION STATUS
Figure 10. DATA# POLLING ALGORITHM
Start
Read Q7~Q0
Add.=VA(1)
Yes
Q7 = Data ?
No
No
Q5 = 1 ?
Yes
Read Q7~Q0
Add.=VA
Yes
Q7 = Data ?
(2)
No
FAIL
Pass
NOTE : 1.VA=Valid address for programming
2.Q7 should be re-checked even Q5="1" because Q7 may change
simultaneously with Q5.
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Figure 11. TOGGLE BIT ALGORITHM
Start
Read Q7-Q0
Read Q7-Q0
Toggle Bit Q6 =
Toggle ?
(Note 1)
NO
YES
NO
Q5= 1?
YES
Read Q7~Q0 Twice
(Note 1,2)
Toggle bit Q6=
Toggle?
NO
YES
Program/Erase Operation
Not Complete,Write
Reset Command
Program/Erase
operation Complete
Note:1.Read toggle bit twice to determine whether or not it is toggling.
2. Recheck toggle bit because it may stop toggling as Q5 change to "1".
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Figure 12. DATA# POLLING TIMINGS (During Automatic Algorithms)
tRC
Address
VA
VA
VA
tACC
tCE
CE#
tCH
tOE
OE#
tOEH
tDF
WE#
tOH
Q7
Complement
Complement
True
Valid Data
Q0-Q6
Status Data
Status Data
True
Valid Data
High Z
High Z
tBUSY
RY/BY#
NOTES:
1. VA=Valid address. Figure shows are first status cycle after command sequence, last status read cycle, and array data read cycle.
2. CE# must be toggled when DATA# polling.
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MX26LV008T/B
Figure 13. TOGGLE BIT TIMINGS (During Automatic Algorithms)
tRC
VA
VA
Address
VA
VA
tACC
tCE
CE#
tCH
tOE
OE#
tDF
tOEH
WE#
tOH
High Z
Q6/Q2
Valid Status
Valid Data
(second read)
(stops toggling)
Valid Status
(first raed)
Valid Data
tBUSY
RY/BY#
NOTES:
1. VA=Valid address; not required for Q6. Figure shows first two status cycle after command sequence, last status read cycle,
and array data read cycle.
2. CE# must be toggled when toggle bit toggling.
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MX26LV008T/B
Table 11. AC CHARACTERISTICS
Parameter Std
Description
Test Setup All Speed Options Unit
tREADY1
RESET# PIN Low (During Automatic Algorithms)
MAX
20
us
MAX
500
ns
to Read or Write (See Note)
tREADY2
RESET# PIN Low (NOT During Automatic
Algorithms) to Read or Write (See Note)
tRP
RESET# Pulse Width (During Automatic Algorithms)
MIN
500
ns
tRH
RESET# High Time Before Read(See Note)
MIN
50
ns
tRB
RY/BY# Recovery Time(to CE#, OE# go low)
MIN
0
ns
Note:Not 100% tested
Figure 14. RESET# TIMING WAVEFORM
RY/BY#
CE#, OE#
tRH
RESET#
tRP
tReady2
Reset Timing NOT during Automatic Algorithms
tReady1
RY/BY#
tRB
CE#, OE#
RESET#
tRP
Reset Timing during Automatic Algorithms
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Figure 15. ID CODE READ TIMING WAVEFORM
VCC
3V
ADD
VID
VIH
A9
VIL
ADD
A0
VIH
VIL
tACC
tACC
VIH
A1
VIL
ADD
A2-A8
A10-A19
CE#
VIH
VIL
VIH
VIL
WE#
VIH
tCE
VIL
OE#
VIH
tOE
VIL
tDF
tOH
tOH
VIH
DATA
Q0-Q7
DATA OUT
DATA OUT
VIL
3EH/37H
C2H
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ERASE AND PROGRAMMING PERFORMANCE(1)
LIMITS
PARAMETER
TYP.(2)
MAX.(3)
UNITS
Sector Erase Time
2.4
15
sec
Chip Erase Time
40
160
sec
Byte Programming Time
55
220
us
Chip Programming Time
35
70
sec
Erase/Program Cycles
MIN.
2K (6)
Cycles
Note:
1. Not 100% tested.
2. Typical program and erase times assume the following conditions : 25° C, 3.3V VCC. Programming spec. assume
that all bits are programmed to checkerboard pattern.
3. Maximum values are measured at VCC=3.0V, worst case temperature. Maximum values are up to including 2K
program/erase cycles.
4. System-level overhead is the time required to execute the command sequences for the all program command.
5. Excludes 00H programming prior to erasure. (In the pre-programming step of the embedded erase algorithm, all bits
are programmed to 00H before erasure)
6. Min. erase/program cycles is under : 3.3V VCC, 25° C, checkerboard pattern conditions, and without baking process.
LATCH-UP CHARACTERISTICS
MIN.
MAX.
Input Voltage with respect to GND on ACC, OE#, RESET#, A9
-1.0V
12V
Input Voltage with respect to GND on all power pins, Address pins, CE# and WE#
-1.0V
VCC + 1.0V
Input Voltage with respect to GND on all I/O pins
-1.0V
VCC + 1.0V
-100mA
+100mA
Current
Includes all pins except VCC. Test conditions: VCC = 3.0V, one pin at a time.
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MX26LV008T/B
ORDERING INFORMATION
PLASTIC PACKAGE
PART NO.
ACCESS TIME
OPERATING CURRENT STANDBY CURRENT
PACKAGE
(ns)
MAX.(mA)
MAX.(uA)
MX26LV008TTC-55
55
30
100
40 Pin TSOP
MX26LV008TTC-70
70
30
100
40 Pin TSOP
MX26LV008BTC-55
55
30
100
40 Pin TSOP
MX26LV008BTC-70
70
30
100
40 Pin TSOP
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PACKAGE INFORMATION
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REVISION HISTORY
Revision No. Description
1.0
1. Removed "Preliminary"
Page
P1
P/N:PM1057
Date
NOV/08/2004
REV. 1.0, NOV. 08, 2004
42
MX26LV008T/B
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