MCH6603 Ordering number : EN6446B SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6603 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --50 Gate-to-Source Voltage VGSS ±10 V --0.14 A Drain Current (DC) ID Drain Current (Pulse) IDP PD Allowable Power Dissipation PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) 1unit V --0.56 A 0.8 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Conditions Ratings min typ Unit max ID=--1mA, VGS=0V VDS=--50V, VGS=0V VGS=±8V, VDS=0V --50 VDS=--10V, ID=--100µA VDS=--10V, ID=--40mA --0.4 Forward Transfer Admittance VGS(off) yfs RDS(on)1 RDS(on)2 ID=--40mA, VGS=--4V ID=--20mA, VGS=--2.5V 18 23 Static Drain-to-Source On-State Resistance 20 28 Ω ID=--5mA, VGS=--1.5V VDS=--10V, f=1MHz 30 60 Ω Input Capacitance RDS(on)3 Ciss Zero-Gate Voltage Drain Current IDSS IGSS Gate-to-Source Leakage Current Cutoff Voltage Output Capacitance Coss Reverse Transfer Capacitance Crss Marking : FC VDS=--10V, f=1MHz VDS=--10V, f=1MHz 70 V --1 µA ±10 µA --1.4 110 V mS Ω 7.4 pF 4.2 pF 1.3 pF Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 70306 / 51506PE MS IM TB-00002290 / O3105PE MS IM TB-00001861 / N1999 TS IM TA-2458 No.6446-1/4 MCH6603 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Turn-ON Delay Time td(on) See specified Test Circuit. 20 Rise Time tr td(off) See specified Test Circuit. 35 ns See specified Test Circuit. 160 ns Turn-OFF Delay Time Fall Time tf Qg Total Gate Charge See specified Test Circuit. 150 ns VDS=--10V, VGS=--10V, ID=--70mA 1.40 nC 0.16 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--70mA VDS=--10V, VGS=--10V, ID=--70mA Diode Forward Voltage VSD IS=--70mA, VGS=0V 0.25 6 5 0.23 0.15 6 5 4 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 1 2 3 Top view 4 2.1 1.6 0.25 2 V 3 0.65 0.3 0.85 0.07 --1.2 Electrical Connection 0 to 0.02 1 nC --0.85 Package Dimensions unit : mm 7022A-006 2.0 ns 1 2 3 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 6 5 4 SANYO : MCPH6 Switching Time Test Circuit VDD= --25V 0V --4V VIN PW=10µs D.C.≤1% ID= --40mA RL=625Ω VOUT D VIN G P.G 50Ω S MCH6603 ID -- VDS --0.03 VGS= --1.5V --0.01 C 75° Drain Current, ID -- A --0.04 --0.1 25°C Ta= --2 --0.12 --2.0V --0.02 VDS= --10V 5°C V .0 --3 0V --6 .0 --0.05 V .5 --2 --3 .5V Drain Current, ID -- A --4 . --0.06 ID -- VGS --0.14 V --0.07 --0.08 --0.06 --0.04 --0.02 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Drain-to-Source Voltage, VDS -- V --1.8 --2.0 IT00090 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 Gate-to-Source Voltage, VGS -- V --3.5 --4.0 IT00091 No.6446-2/4 MCH6603 RDS(on) -- VGS VGS= --4V 35 30 25 ID= --20mA 20 --40mA 15 7 5 3 Ta=75°C 2 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 Gate-to-Source Voltage, VGS -- V 10 --0.01 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 5 7 2 100 7 5 Ta=75°C 25°C --25°C 3 2 10 --0.01 2 3 5 7 2 --0.1 Drain Current, ID -- A RDS(on) -- ID -2 =GS 20 .0V -4 =S m -20 =ID , VG mA -40 =ID 15 --40 --20 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 7 C --25° 5°C Ta= 7 --0.7 25°C 5 --0.8 --0.9 --1.0 Diode Forward Voltage, VSD -- V --1.1 --1.2 IT00098 7 2 --0.01 3 IT00095 VDS= --10V 7 5 3 2 °C Ta= --25 0.1 75°C 7 25°C 5 3 2 2 3 5 7 2 --0.1 VDD= --25V VGS = --4V 5 3 2 3 IT00097 SW Time -- ID 7 Switching Time, SW Time -- ns --0.1 5 yfs -- ID 1000 2 --0.6 3 Drain Current, ID -- A 3 2 2 IT00096 VGS=0V 3 2 0.01 --0.01 160 IS -- VSD 5 25°C --25°C 3 Drain Current, ID -- A Forward Transfer Admittance, yfs -- S .5V V A, Ta=75°C IT00094 35 25 5 1.0 30 3 IT00093 7 10 --0.001 3 RDS(on) -- Ta 40 2 --0.1 VGS= --1.5V 3 --0.01 --0.5 3 Drain Current, ID -- A 100 5 10 --60 2 IT00092 VGS= --2.5V 7 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω --10 RDS(on) -- ID 1000 25°C --25°C 10 Source Current, IS -- A RDS(on) -- ID 100 Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 40 tf td (off) 100 7 5 tr 3 td(on) 2 10 --0.01 2 3 5 Drain Current, ID -- A 7 --0.1 IT00099 No.6446-3/4 MCH6603 Ciss, Coss, Crss -- VDS 100 7 5 f=1MHz Gate-to-Source Voltage, VGS -- V Ciss, Coss, Crss -- pF 2 10 7 5 Ciss Coss 3 2 Crss 1.0 7 5 3 2 --5 --10 --15 --20 --25 --30 --35 --40 --45 Drain-to-Source Voltage, VDS -- V --6 --5 --4 --3 --2 0 --50 3 10 ms DC --0.1 10 0m op s er 7 5 Operation in this area is limited by RDS(on). 3 ati on Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit --0.01 --1.0 2 3 5 7 --10 2 3 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W PW≤10µs 1m s IDP= --0.56A 0.8 0.6 1.0 1.2 1.4 Total Gate Charge, Qg -- nC 1.6 IT00101 PD -- Ta 1.0 5 ID= --0.14A 0.4 0.2 IT00100 ASO --1.0 Drain Current, ID -- A --7 0 0 2 --8 --1 0.1 2 VDS= --10V ID= --70mA --9 3 7 VGS -- Qg --10 M 0.8 ou nt ed on ac er 0.6 am ic bo ar d( 90 0.4 0m m2 ✕0 .8m 0.2 m )1 un it 0 5 7 --100 IT01737 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT01738 Note on usage : Since the MCH6603 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 2006. Specifications and information herein are subject to change without notice. PS No.6446-4/4