CET CEB1175 N-channel enhancement mode field effect transistor Datasheet

CEP1175/CEB1175
CEF1175
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
VDSS
RDS(ON)
ID
@VGS
CEP1175
650V
1Ω
10A
10V
CEB1175
650V
1Ω
10A
10V
CEF1175
650V
1Ω
10A e
10V
Super high dense cell design for extremely low RDS(ON).
D
High power and current handing capability.
Lead free product is acquired.
G
D
G
D
S
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
CEP SERIES
TO-220
ABSOLUTE MAXIMUM RATINGS
Parameter
S
S
CEF SERIES
TO-220F
Tc = 25 C unless otherwise noted
Limit
Symbol
TO-220/263
Drain-Source Voltage
VDS
650
Gate-Source Voltage
VGS
±30
Drain Current-Continuous
Drain Current-Pulsed
ID
a
IDM
Maximum Power Dissipation @ TC = 25 C
10
f
PD
- Derate above 25 C
TO-220F
Units
V
V
10
e
e
A
A
40
40
167
50
W
1.33
0.4
W/ C
TJ,Tstg
-55 to 150
C
Symbol
Limit
Units
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
RθJC
0.75
2.5
C/W
Thermal Resistance, Junction-to-Ambient
RθJA
62.5
65
C/W
Rev 1. 2006.Oct
http://www.cetsemi.com
Details are subject to change without notice .
1
CEP1175/CEB1175
CEF1175
Electrical Characteristics
Parameter
Tc = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
650
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
Typ
Max
Units
VDS = 650V, VGS = 0V
10
µA
IGSSF
VGS = 30V, VDS = 0V
100
nA
IGSSR
VGS = -30V, VDS = 0V
-100
nA
4
V
1
Ω
Off Characteristics
V
On Characteristics b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics c
Forward Transconductance
VGS(th)
VGS = VDS, ID = 250µA
RDS(on)
VGS = 10V, ID = 5A
gFS
VDS = 5V, ID = 10A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
2
6
S
1760
pF
165
pF
20
pF
Switching Characteristics c
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
VDD = 300V, ID = 10A,
VGS = 10V, RGEN = 10Ω
19
38
ns
6
12
ns
36
72
ns
Turn-Off Fall Time
tf
6
12
ns
Total Gate Charge
Qg
30.2
40.1
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = 480V, ID = 10A,
VGS = 10V
9.4
nC
8
nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
IS g
b
VSD
VGS = 0V, IS = 10A g
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
e.Limited only by maximum temperature allowed .
f .Pulse width limited by safe operating area .
g.Full package IS(max) = 4.5A .
2
10
A
1.5
V
4
CEP1175/CEB1175
CEF1175
18
10
ID, Drain Current (A)
ID, Drain Current (A)
12
VGS=10,9,8,7V
8
VGS=6V
6
4
VGS=5V
2
0
0
3
6
9
25 C
3
1
2
-55 C
3
4
5
6
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
Ciss
900
600
Coss
300
Crss
0
5
10
15
20
25
3.0
2.5
ID=5A
VGS=10V
2.0
1.5
1.0
0.5
0.0
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
VDS=VGS
ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50
TJ=125C
VGS, Gate-to-Source Voltage (V)
IS, Source-drain current (A)
C, Capacitance (pF)
VTH, Normalized
Gate-Source Threshold Voltage
6
12
1200
1.2
9
VDS, Drain-to-Source Voltage (V)
1500
1.3
12
0
1800
0
15
-25
0
25
50
75
100
125
VGS=0V
10
1
10
0
10-1
0.4
150
0.7
1.0
1.3
1.7
2.0
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
10
VDS=480V
ID=10A
RDS(ON)Limit
8
ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
CEP1175/CEB1175
CEF1175
6
4
2
0
0
8
16
24
10
1
1ms
10ms
DC
10
10
32
4
100ms
0
TC=25 C
TJ=150 C
Single Pulse
-1
10
0
10
1
10
2
10
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
t on
RL
V IN
D
VGS
RGEN
toff
tr
td(on)
td(off)
tf
90%
90%
VOUT
VOUT
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 10. Switching Waveforms
Figure 9. Switching Test Circuit
r(t),Normalized Effective
Transient Thermal Impedance
10
0
D=0.5
10
0.2
0.1
-1
0.05
0.02
0.01
10
10
PDM
t1
Single Pulse
-2
1. RθJC (t)=r (t) * RθJC
2. RθJC=See Datasheet
3. TJM-TC = P* RθJC (t)
4. Duty Cycle, D=t1/t2
-3
10
t2
-5
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
10
0
10
1
3
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