CEP1175/CEB1175 CEF1175 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP1175 650V 1Ω 10A 10V CEB1175 650V 1Ω 10A 10V CEF1175 650V 1Ω 10A e 10V Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. G D G D S G S CEB SERIES TO-263(DD-PAK) G D CEP SERIES TO-220 ABSOLUTE MAXIMUM RATINGS Parameter S S CEF SERIES TO-220F Tc = 25 C unless otherwise noted Limit Symbol TO-220/263 Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±30 Drain Current-Continuous Drain Current-Pulsed ID a IDM Maximum Power Dissipation @ TC = 25 C 10 f PD - Derate above 25 C TO-220F Units V V 10 e e A A 40 40 167 50 W 1.33 0.4 W/ C TJ,Tstg -55 to 150 C Symbol Limit Units Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case RθJC 0.75 2.5 C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 65 C/W Rev 1. 2006.Oct http://www.cetsemi.com Details are subject to change without notice . 1 CEP1175/CEB1175 CEF1175 Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 650 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 650V, VGS = 0V 10 µA IGSSF VGS = 30V, VDS = 0V 100 nA IGSSR VGS = -30V, VDS = 0V -100 nA 4 V 1 Ω Off Characteristics V On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forward Transconductance VGS(th) VGS = VDS, ID = 250µA RDS(on) VGS = 10V, ID = 5A gFS VDS = 5V, ID = 10A Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0 MHz 2 6 S 1760 pF 165 pF 20 pF Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 300V, ID = 10A, VGS = 10V, RGEN = 10Ω 19 38 ns 6 12 ns 36 72 ns Turn-Off Fall Time tf 6 12 ns Total Gate Charge Qg 30.2 40.1 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 480V, ID = 10A, VGS = 10V 9.4 nC 8 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage IS g b VSD VGS = 0V, IS = 10A g Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. e.Limited only by maximum temperature allowed . f .Pulse width limited by safe operating area . g.Full package IS(max) = 4.5A . 2 10 A 1.5 V 4 CEP1175/CEB1175 CEF1175 18 10 ID, Drain Current (A) ID, Drain Current (A) 12 VGS=10,9,8,7V 8 VGS=6V 6 4 VGS=5V 2 0 0 3 6 9 25 C 3 1 2 -55 C 3 4 5 6 Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) Ciss 900 600 Coss 300 Crss 0 5 10 15 20 25 3.0 2.5 ID=5A VGS=10V 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 TJ=125C VGS, Gate-to-Source Voltage (V) IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage 6 12 1200 1.2 9 VDS, Drain-to-Source Voltage (V) 1500 1.3 12 0 1800 0 15 -25 0 25 50 75 100 125 VGS=0V 10 1 10 0 10-1 0.4 150 0.7 1.0 1.3 1.7 2.0 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 VDS=480V ID=10A RDS(ON)Limit 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEP1175/CEB1175 CEF1175 6 4 2 0 0 8 16 24 10 1 1ms 10ms DC 10 10 32 4 100ms 0 TC=25 C TJ=150 C Single Pulse -1 10 0 10 1 10 2 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D VGS RGEN toff tr td(on) td(off) tf 90% 90% VOUT VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms Figure 9. Switching Test Circuit r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 10 0.2 0.1 -1 0.05 0.02 0.01 10 10 PDM t1 Single Pulse -2 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 -3 10 t2 -5 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 0 10 1 3