isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV10 DESCRIPTION ·High Switching Speed ·High Current Capability APPLICATIONS ·Designed for high current,high speed,high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEX Collector-Emitter Voltage VBE= -1.5V 160 V VCER Collector-Emitter Voltage RBE= 100Ω 140 V VCEO Collector-Emitter Voltage 125 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 25 A ICM Collector Current-Peak 30 A IB Base Current-Continuous 6 A PC Collector Power Dissipation @TC=25℃ 150 W Tj Junction Temperature 200 ℃ -65~200 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn MAX UNIT 1.0 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV10 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L= 25mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 20A ;IB= 2A 2.0 V Base-Emitter Saturation Voltage IC= 10A; IB= 1A 1.5 V ICEO Collector Cutoff Current VCE= 100V; IB= 0 1.5 mA ICEX Collector Cutoff Current VCE= 160V;VBE= -1.5V VCE= 160V;VBE= -1.5V;TC=125℃ 1.5 6.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.5 mA hFE-1 DC Current Gain IC= 10A ; VCE= 4V 20 hFE-2 DC Current Gain IC= 20A ; VCE= 4V 10 Current-Gain—Bandwidth Product IC= 1A; VCE= 15V 8 VBE(sat) fT isc Website：www.iscsemi.cn CONDITIONS MIN TYP. MAX UNIT 125 V 7 V 60 MHz