PHILIPS BLV57 Uhf linear push-pull power transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BLV57
UHF linear push-pull power
transistor
Product specification
Supersedes data of August 1986
1998 Feb 09
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
FEATURES
BLV57
PINNING - SOT161A
• internally matched input for wideband operation and
high power gain
PIN
SYMBOL
1
e
emitter
2
e
emitter
• increased input and output impedances (compared with
single-ended transistors) simplify wideband matching
3
c2
collector 2
4
b2
base 2
• length of the external emitter leads is not critical
5
c1
collector 1
• diffused emitter ballasting resistors for an optimum
temperature profile
6
b1
base 1
7
e
emitter
• gold metallization ensures excellent reliability.
8
e
emitter
• internal midpoint (r.f. ground) reduces negative
feedback and improves power gain
DESCRIPTION
DESCRIPTION
handbook, halfpage
Two n-p-n silicon planar epitaxial transistor sections in one
package to be used as push-pull amplifier, primarily
intended for use in linear u.h.f. television transmitters and
transposers.
The package is an 8-lead flange type with a ceramic cap.
All leads are isolated from the flange.
1
2
3
4
5
6
7
8
Top view
MBC826
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
R.F. performance in linear amplifier
fvision
MHz
VCE
V
IC1 = IC2
A
IC(ZS)
A
Th
°C
dim(1)
dB
Po sync(1)
W
PL
W
class-A
860
25
0,85
−
70
25
−60
−55
〉 6
typ. 12
−
class-AB
860
25
1,25
25
−
−
typ. 38(2)
MODE OF
OPERATION
2 × 0,1
Gp
dB
〉
8,0
typ. 9,0
typ. 6,5(2)
Notes
1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to
peak sync level.
2. Power gain compression is 1 dB.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1998 Feb 09
2
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV57
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage
(peak value); VBE = 0
vCESM
max.
open base
VCEO
max.
27 V
VEBO
max.
3,5 V
d.c. or average
IC; IC(AV)
max.
2 A
(peak value); f 〉 1 MHz
ICM
max.
4 A
Ptot
max.
77 W(1)
R.F. power dissipation (f 〉 1 MHz); Tmb = 25 °C(1)
Prf
max.
93 W(1)
Storage temperature
Tstg
−65 to + 150 °C
Operating junction temperature
Tj
max.
Emitter-base voltage (open collector)
50 V
Collector current per transistor section
Total power dissipation at Tmb = 25
°C(1)
Note
1. Dissipation of either transistor section should not exceed half rated dissipation.
MGP358
10
handbook, halfpage
IC1 + IC2
(A)
(1)
Th = 70 °C
1
1
10
Tmb = 25 °C
VCE (V)
(1) Second breakdown limit
(independent of temperature).
Fig.2 D.C. SOAR.(1)
1998 Feb 09
3
102
200 °C
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV57
MGP359
100
handbook, halfpage
Ptot
(W)
75
ΙΙ
50
Ι
25
0
0
50
Th (°C)
100
I Continuous d.c. (including r.f. class-A) operation
II Continuous r.f. operation
Dissipation of either transistor section should not exceed half rated dissipation.
Fig.3 Power derating curves vs. temperature.(1)
THERMAL RESISTANCE
(dissipation = 42 W; Tmb = 80,5 °C, i.e. Th = 70 °C)
From junction to mounting base (d.c. dissipation)
Rth j−mb(dc)
=
2,43
K/W
From junction to mounting base (r.f. dissipation)
Rth j−mb(rf)
=
1,91
K/W
From mounting base to heatsink
Rth mb−h
=
0,25
K/W
1998 Feb 09
4
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV57
MGP360
3
handbook, full pagewidth
Th = 120 °C
80 °C
100 °C
60 °C
40 °C
20 °C
Rth j-h
(K/W)
0 °C
2.5
Tj = 200 °C
175 °C
150 °C
125 °C
100 °C
2
75 °C
1.5
0
Fig.4
20
40
60
80
Ptot (W)
100
Maximum thermal resistance from junction to heatsink as a function of power dissipation, with heatsink
and junction temperature as parameters. (Rth mb-h = 0,25 K/W.)
Example
Nominal class-A push-pull operation (without r.f. signal): VCE = 25 V; IC1 = IC2 = 0,85 A; Th = 70 °C.
Fig.4 shows:
Rth j-h
max.
Tj
max.
184 °C
typ.
2,28 K/W
typ.
167 °C
Typical device: Rth j-h
Tj
1998 Feb 09
2,68 K/W
5
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV57
CHARACTERISTICS apply to either transistor section unless otherwise specified
Tj = 25°C
Collector-emitter breakdown voltage
VBE = 0; IC = 10 mA
V(BR)CES
〉
50 V
open base; IC = 25 mA
V(BR)CEO
〉
27 V
V(BR)EBO
〉
3,5 V
ICES
〈
10 mA
open base
ESBO
〉
2 mJ
RBE = 10 Ω
ESBR
〉
2 mJ
hFE
〉
typ.
Emitter-base breakdown voltage
open collector; IE = 5 mA
Collector cut-off current
VBE = 0; VCE = 27 V
Second breakdown energy; L = 25 mH; f = 50 Hz
D.C. current gain(1)
IC = 0,85 A; VCE = 25 V
15
40
D.C. current gain ratio of transistor sections
IC = 0,85 A; VCE = 25 V
Collector-emitter saturation
0,67 to 1,5
voltage(1)
IC = 1,7 A; IB = 0,17 A
VCEsat
typ.
−IE = 0,85 A; VCB = 25 V
fT
typ.
2,5 GHz
−IE = 1,7 A; VCB = 25 V
fT
typ.
2,5 GHz
Cc
typ.
〈
24 pF
30 pF
IC = 50 mA; VCE = 25 V
Cre
typ.
15 pF
Collector-flange capacitance
Ccf
typ.
2 pF
Transition frequency at f = 100
0,75 V
MHz(2)
Collector capacitance at f = 1 MHz
IE = Ie = 0; VCB = 25 V
Feedback capacitance at f = 1 MHz
Notes
1. Measured under pulse conditions: tp ≤ 300 µs; δ ≤ 0,02.
2. Measured under pulse conditions: tp ≤ 50 µs; δ ≤ 0,01.
The graphs apply to either transistor section.
1998 Feb 09
6
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV57
MGP361
10
handbook, halfpage
IC
(A)
Th = 70 °C
25 °C
1
1.5
1
10−1
10−2
0.5
VBE (V)
2
Fig.5 Typical values; VCE = 25 V.
MGP362
60
handbook, halfpage
hFE
VCE = 25 V
40
5V
20
0
0
1
IC (A)
Fig.6 Typical values; Tj = 25 °C.
1998 Feb 09
7
2
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV57
MGP363
4
handbook, halfpage
fT
(GHz)
3
typ
2
1
0
0
1
2
−IE (A)
3
Fig.7 VCB = 25 V; f = 500 MHz; Tj = 25 °C.
MGP364
100
handbook, halfpage
Cc
(pF)
75
50
typ
25
0
0
10
20
VCB (V)
30
Fig.8 IE = Ie = 0; f = 1 MHz; Tj = 25 °C.
1998 Feb 09
8
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV57
APPLICATION INFORMATION
R.F. performance in u.h.f. class-A operation (linear push-pull power amplifier)
fvision (MHz)
VCE (V)
860
IC1 = IC2 (A)
25
Th (°C)
dim (1) (dB)
70
−60
〉
6
〉
8,0
70
−60
typ.
7,5
typ.
8,5
70
−55
typ.
10
typ.
8,5
25
−55
typ.
12
typ.
9,0
0,85
Po sync (1) (W)
Gp (dB)
Note
1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to
peak sync level.
h
+VBB1
+VCC1
C14
C5
C11
C8
C15
T.U.T.
L9
L5
L1
C2
L3
L10
L6
C20
L13
C22
C1
R1
C4
C6
C9
C13
C16
C19
C23
50 Ω
50 Ω
L2
C3
L4
L7
L11
C21
L12
L8
C17
C12
C10
C7
C18
+VBB2
+VCC2
Fig.9 Class-A test circuit at fvision = 860 MHz.
1998 Feb 09
9
MGP365
L14
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV57
List of components:
C1 = C6 = C16 = 4,7 pF (500 V) multilayer ceramic chip capacitor (ATC(1))
C2 = C3 = C20 = C21 = 33 pF multilayer ceramic chip capacitor (cat. no. 2222 851 13339)
C4 = C9 = C13 = C19 = 1,2 to 3,5 pF film dielectric trimmer (cat.no. 2222 809 05001)
C5 = C7 = C15 = C17 = 100 nF multilayer ceramic chip capacitor (cat. no. 2222 852 59104)
C8 = C10 = C11 = C12 = 220 pF multilayer ceramic chip capacitor (cat. no. 2222 852 13221)
C14 = C18 = 6,8 µF/40 V solid aluminium electrolytic capacitor
C22 = C23 = 1 pF (500 V) multilayer ceramic chip capacitor (ATC(1))
C9 and C13 are placed 8,0 and 14,0 mm from transistor edge, respectively.
L1 = L2 = L13 = L14 = 50 Ω semi-rigid cable; outer diameter 2,2 mm; length 29,0 mm. These cables are soldered on
75 Ω striplines (1,1 mm × 28,0 mm). The centre conductors of the cables L1 and L13
are not connected.
L3 = L4 = 52 Ω stripline (2,0 mm × 16,5 mm)
L5 = L8 = 470 nH microchoke
L6 = L7 = 39 Ω stripline (3,1 mm × 8,0 mm)
L9 = L12 = 1 turn Cu wire (1,0 mm); int. dia. 5,5 mm; leads 2 × 3,5 mm
L10 = L11 = 39 Ω stripline (3,1 mm × 34,0 mm)
L3, L4, L6, L7, L10 and L11 are striplines on a double Cu-clad printed-circuit board with PTFE fibre-glass dielectric
(∈r = 2,74); thickness 1/32”.
R1 = 10 Ω carbon resistor
Note
1. ATC means American Technical Ceramics.
1998 Feb 09
10
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV57
73
11
64
handbook, full pagewidth
60
+VBB1
+VCC1
C14
C5
L1
L5
C2 C4 L3
C3
input
L2
L6
L7
L4
L10
L11
L12
L8
C7
L9
C9
C6
C1
C11
C8
C20
C15
C22
C13 L10 C19
C16 L11
C17
C10
L13
R1
C23
C21
L14
output
C12
C18
MGP366
+VBB2
+VCC2
Fig.10 Component layout and printed-circuit board for 860 MHz class-A test circuit.
The circuit and the components are on one side of the PTFE fibre-glass board, the other side is unetched copper to serve
as a ground-plane. Earth connections are made by means of bolts. Additionally copper straps are used under the emitters
and at the input and output to provide direct contact between the copper on the component side and the ground-plane.
1998 Feb 09
11
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV57
MGP367
−50
handbook, halfpage
10
Gp
dim
(dB)
Gp
(dB)
−60
5
dim
−70
0
5
10
15
Po sync (W)
20
Fig.11 Intermodulation distortion (dim)(1) and power gain as a function of output power.
MGP368
30
handbook, halfpage
dcm
(%)
20
10
0
0
10
Po sync (W)
20
Fig.12 Cross-modulation distortion (dcm)(2) as a function of output power.
1998 Feb 09
12
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV57
Conditions for Figs 11and 12:
Typical values; VCE = 25 V; IC = 2 × 0,85 A; − − − Th = 25 °C;  Th = 70 °C; fvision = 860 MHz.
Ruggedness in push-pull class-A operation
The BLV57 is capable of withstanding full load mismatch (VSWR = 50 through all phases) under the following
conditions:
VCE = 25 V; IC = 2 × 0,85 A; Th = 70 °C; Po sync(1) ≤ 12,5 W; f = 860 MHz; Rth mb-h = 0,25 K/W.
At any other composition of the output signal: PL (r.m.s. value) ≤ 5 W.
Notes
1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to
peak sync level.
Intermodulation distortion of input signal ≤ −70 dB.
2. Two-tone test method (vision carrier 0 dB, sound carrier −7 dB), zero dB corresponds to peak sync level.
Cross-modulation distortion (dcm) is the voltage variation (%) of sound carrier when vision carrier is switched from 0
dB to −20 dB.
MGP369
6
handbook, halfpage
ri, xi
(Ω)
xi
4
2
ri
0
400
650
f (MHz)
900
Fig.13 Input impedance (series components).
1998 Feb 09
13
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV57
MGP370
15
handbook, halfpage
RL, XL
(Ω)
10
RL
5
XL
0
400
650
f (MHz)
900
Fig.14 Load impedance (series components).
MGP371
15
handbook, halfpage
Gp
(dB)
10
5
0
400
650
Fig.15
1998 Feb 09
14
f (MHz)
900
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV57
Conditions for Figs 13, 14 and 15:
The graphs apply to either transistor section assuming class-A push-pull operation.
Typical values; VCE = 25 V; IC = 0,85 A; Th = 70 °C.
APPLICATION INFORMATION
R.F. performance in u.h.f. class-AB operation (c.w.)
fvision (MHz)
VCE (V)
IC(ZS) (A)
Th (°C)
860
25
2 × 0,1
25
860
25
2 × 0,1
70
PL (W)
IC1 = IC2 (A)
η (%)
12,5
Gp(1) (dB)
typ. 7,5
38
typ. 1,25
typ. 60
12,5
typ. 6,5
typ. 7,0
30
typ. 1,10
typ. 55
typ. 6,0
Note
1. Typical values are based on 1 dB gain compression. Using a 3rd order amplitude transfer characteristic, 1 dB
compression corresponds with 30% sync input/25% sync output compression in television service (negative
modulation, C.C.I.R. system).
width
+VBB1
+VCC1
C8
C11
C5
C14
T.U.T.
L9
L5
L1
C2
L3
L10
L6
C18
L13
C20
C1
R1
C4
C6
C9
C13
C15
C17
C21
50 Ω
50 Ω
L2
C3
L4
L7
C19
L11
L12
L8
C16
C7
C12
C10
+VBB2
+VCC2
MGP372
Fig.16 Class-AB test circuit at fvision = 860 MHz.
1998 Feb 09
15
L14
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV57
List of components:
C1 = C6 = C15 = 4,7 pF (500 V) multilayer ceramic chip capacitor (ATC(1))
C2 = C3 = C18 = C19 = 33 pF multilayer ceramic chip capacitor (cat. no. 2222 851 13339)
C4 = C9 = C13 = C17 = 1,2 to 3,5 pF film dielectric trimmer (cat. no. 2222 809 05001)
C5 = C7 = C14 = C16 = 100 nF multilayer ceramic chip capacitor (cat. no. 2222 852 59104)
C8 = C10 = C11 = C12 = 220 pF multilayer ceramic chip capacitor (cat. no. 2222 852 13221)
C20 = C21 = 1 pF (500 V) multilayer ceramic chip capacitor (ATC(1))
C9 and C13 are placed 8,0 and 14,0 mm from transistor edge, respectively.
L1 = L2 = L13 = L14 = 50 Ω semi-rigid cable; outer diameter 2,2 mm; length 29,0 mm. These cables are soldered on
75 Ω striplines (1,1 mm × 28,0 mm). The centre conductors of the cables L1 and L13
are not connected.
L3 = L4 = 52 Ω stripline (2,0 mm × 16,5 mm)
L5 = L8 = 470 nH microchoke
L6 = L7 = 39 Ω stripline (3,1 mm × 8,0 mm)
L9 = L12 = 1 turn Cu wire (1,0 mm); int. dia. 5,5 mm; leads 2 × 3,5 mm
L10 = L11 = 39 Ω stripline (3,1 mm × 34,0 mm)
L3, L4, L6, L7, L10 and L11 are striplines on a double Cu-clad printed-circuit board with PTFE fibre-glass dielectric
(∈r = 2,74); thickness 1/32”
R1 = 10 Ω carbon resistor.
Note
1. ATC means American Technical Ceramics.
1998 Feb 09
16
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
73
11
64
handbook, full pagewidth
BLV57
60
+VBB1
C5
L1
L5
C2 C4 L3
C3
input
C11
C8
C14
L6
L7
L4
L10
L11
L12
L8
C13 L10 C17
C15 L11
C10
C20
R1
C21
C19
C16
C7
L13
C18
L9
C9
C6
C1
L2
+VCC1
L14
output
C12
MGP373
+VBB2
+VCC2
Fig.17 Component layout and printed-circuit board for 860 MHz class-AB test circuit.
The circuit and the components are on one side of the PTFE fibre-glass board, the other side is unetched copper to serve
as a ground-plane. Earth connections are made by means of bolts. Additionally copper straps are used under the emitters
and at the input and output to provide direct contact between the copper on the component side and the ground-plane.
1998 Feb 09
17
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV57
MGP374
60
handbook, halfpage
PL
(W)
40
Th = 25 °C
70 °C
20
0
0
5
PS (W)
10
Fig.18 Typical values; VCE = 25 V; IC(ZS) = 2 × 0,1 A; fvision = 860 MHz.
MGP375
7.5
75
handbook, halfpage
Gp
Gp
η
(%)
(dB)
5
50
η
2.5
25
0
0
0
20
PL (W)
40
Fig.19 Typical values; VCE = 25 V; IC(ZS) = 2 × 0,1 A; − − − Th = 25 °C;  Th = 70°C; fvision = 860 MHz.
1998 Feb 09
18
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV57
Ruggedness in class-AB operation
The BLV57 is capable of withstanding a load mismatch (VSWR ≤ 2 through all phases) up to 30 W (r.m.s. value) or
(VSWR ≤ 50 through all phases) up to 19 W under the following conditions:
VCE = 25 V; Th = 70 °C; f = 860 MHz; Rth mb-h = 0,25 K/W.
MGP376
6
handbook, halfpage
ri, xi
(Ω)
xi
4
2
ri
0
400
650
f (MHz)
900
Fig.20 Input impedance (series components).
1998 Feb 09
19
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV57
MGP377
15
handbook, halfpage
RL, XL
(Ω)
10
RL
5
XL
0
400
650
f (MHz)
900
Fig.21 Load impedance (series components).
MGP378
15
handbook, halfpage
Gp
(dB)
10
5
0
400
650
f (MHz)
900
Fig.22
Conditions for Figs 20; 21 and 22:
The graphs apply to either transistor section assuming class-AB push-pull operation.
Typical values; VCE = 25 V; IC(ZS) = 0,1 A; PL = 17,5 W (P.E.P); Th = 70 °C.
1998 Feb 09
20
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV57
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 8 leads
SOT161A
D
A
F
U1
B
q
C
w2 M C
H1
b1
7
H
5
c
3
1
E
U2
8
A
6
4
2
Q
w3 M
b
e1
w1 M A B
p
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
b1
mm
7.27
6.47
2.04
1.77
2.93
2.66
inches
c
D
w2
w3
4.32
24.97 10.34
18.42
0.51
4.06
24.71 10.08
1.02
0.26
0.286 0.080 0.115 0.007 0.402 0.402
0.106 0.669 0.505 0.132 0.170
0.983 0.407
0.138 0.150
0.725
0.02
0.255 0.070 0.105 0.004 0.394 0.394
0.082 0.630 0.495 0.120 0.160
0.973 0.397
0.04
0.01
OUTLINE
VERSION
E
e
e1
0.18 10.22 10.22
3.50
0.10 10.00 10.00
3.80
F
H
JEDEC
EIAJ
SOT161A
1998 Feb 09
p
2.70 17.00 12.83 3.36
2.08 16.00 12.57 2.92
REFERENCES
IEC
H1
Q
q
U1
U2
w1
EUROPEAN
PROJECTION
ISSUE DATE
97-06-28
21
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV57
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Feb 09
22
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
NOTES
1998 Feb 09
23
BLV57
Philips Semiconductors – a worldwide company
Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010,
Fax. +43 160 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 689 211, Fax. +359 2 689 102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 0044
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580920
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2686, Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1998
SCA57
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125108/00/02/pp24
Date of release: 1998 Feb 09
Document order number:
9397 750 03285