APT7M120B
APT7M120S
1200V, 8A, 2.1Ω Max
N-Channel MOSFET
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.
A proprietary planar stripe design yields excellent reliability and manufacturability. Low
switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control slew rates during switching, resulting in low EMI and reliable paralleling,
even when switching at very high frequency. Reliability in flyback, boost, forward, and
other circuits is enhanced by the high avalanche energy capability.
TO
-2
47
D3PAK
APT7M120B
APT7M120S
D
Single die MOSFET
G
S
TYPICAL APPLICATIONS
FEATURES
• Fast switching with low EMI/RFI
• PFC and other boost converter
• Low RDS(on)
• Buck converter
• Ultra low Crss for improved noise immunity
• Two switch forward (asymmetrical bridge)
• Low gate charge
• Single switch forward
• Avalanche energy rated
• Flyback
• RoHS compliant
• Inverters
Absolute Maximum Ratings
Symbol
ID
Parameter
Unit
Ratings
Continuous Drain Current @ TC = 25°C
8
Continuous Drain Current @ TC = 100°C
5
A
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy 2
575
mJ
IAR
Avalanche Current, Repetitive or Non-Repetitive
3
A
1
28
Thermal and Mechanical Characteristics
Min
Characteristic
Typ
Max
Unit
W
PD
Total Power Dissipation @ TC = 25°C
335
RθJC
Junction to Case Thermal Resistance
0.37
RθCS
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
150
°C
Soldering Temperature for 10 Seconds (1.6mm from case)
WT
Package Weight
300
0.22
oz
6.2
g
10
in·lbf
1.1
N·m
Mounting Torque ( TO-247 Package), 6-32 or M3 screw
MicrosemiWebsite-http://www.microsemi.com
5-2009
TL
Torque
-55
Rev B
TJ,TSTG
°C/W
0.11
050-8104
Symbol
Static Characteristics
TJ = 25°C unless otherwise specified
Symbol
Parameter
VBR(DSS)
Drain-Source Breakdown Voltage
ΔVBR(DSS)/ΔTJ
Breakdown Voltage Temperature Coefficient
RDS(on)
Drain-Source On Resistance
VGS(th)
Gate-Source Threshold Voltage
ΔVGS(th)/ΔTJ
IGSS
Gate-Source Leakage Current
Dynamic Characteristics
Symbol
VDS = 1200V
VGS = 0V
Forward Transconductance
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Typ
Max
1.41
1.50
4
-10
2.1
5
TJ = 25°C
100
500
±100
TJ = 125°C
VGS = ±30V
Unit
V
V/°C
Ω
V
mV/°C
µA
nA
TJ = 25°C unless otherwise specified
Parameter
gfs
3
VGS = VDS, ID = 1mA
Threshold Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Min
1200
VGS = 10V, ID = 3A
3
IDSS
Test Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 250µA
APT7M120B_S
Min
Test Conditions
VDS = 50V, ID = 3A
VGS = 0V, VDS = 25V
f = 1MHz
Co(cr)
4
Effective Output Capacitance, Charge Related
Co(er)
5
Effective Output Capacitance, Energy Related
Typ
8
2565
31
190
Max
Unit
S
pF
75
VGS = 0V, VDS = 0V to 800V
38
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
td(on)
Turn-On Delay Time
Resistive Switching
Current Rise Time
VDD = 800V, ID = 3A
tr
td(off)
tf
80
13
37
14
8
45
13
VGS = 0 to 10V, ID = 3A,
VDS = 600V
RG = 4.7Ω 6 , VGG = 15V
Turn-Off Delay Time
Current Fall Time
nC
ns
Source-Drain Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 1
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
dv/dt
Test Conditions
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
Peak Recovery dv/dt
Min
Typ
D
Max
Unit
8
A
G
28
S
ISD = 3A, TJ = 25°C, VGS = 0V
ISD = 3A, VDD = 100V 3
diSD/dt = 100A/µs, TJ = 25°C
ISD ≤ 3A, di/dt ≤1000A/µs, VDD = 800V,
TJ = 125°C
1.0
1165
18
V
ns
µC
10
V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 127.78mH, RG = 4.7Ω, IAS = 3A.
3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
5-2009
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -1.17E-7/VDS^2 + 1.42E-8/VDS + 2.01E-11.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
050-8104
Rev B
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
APT7M120B_S
25
8
V
GS
= 10V
T = 125°C
J
7
V
= 6, 7, 8 & 9V
GS
ID, DRIAN CURRENT (A)
ID, DRAIN CURRENT (A)
20
TJ = -55°C
15
10
TJ = 25°C
6
5
4
5V
3
2
5
TJ = 125°C
0
0
5
10
15
20
25
30
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
0
Figure 2, Output Characteristics
30
NORMALIZED TO
VDS> ID(ON) x RDS(ON) MAX.
25
2.5
2.0
1.5
1.0
TJ = -55°C
15
TJ = 25°C
10
TJ = 125°C
0
0
-55 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 3, RDS(ON) vs Junction Temperature
0
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
4,000
Ciss
1,000
8
C, CAPACITANCE (pF)
TJ = -55°C
TJ = 25°C
6
TJ = 125°C
4
100
Coss
10
2
16
1
2
3
ID, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
200
400
600
800 1000 1200
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
12
VDS = 240V
10
VDS = 600V
8
6
VDS = 960V
4
2
0
0
30
ID = 3A
14
0
1
4
20
40
60
80
100
120
Qg, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
25
20
TJ = 25°C
15
TJ = 150°C
10
5-2009
0
5
0
0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
Rev B
0
Crss
ISD, REVERSE DRAIN CURRENT (A)
gfs, TRANSCONDUCTANCE
20
5
0.5
10
VGS, GATE-TO-SOURCE VOLTAGE (V)
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
VGS = 10V @ 3A
ID, DRAIN CURRENT (A)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
Figure 1, Output Characteristics
3.0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
050-8104
0
4.5V
1
TJ = 150°C
APT7M120B_S
40
IDM
10
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
40
13µs
100µs
1
1ms
Rds(on)
10ms
0.1
Rds(on)
13µs
100µs
1ms
10ms
100ms
1
TJ = 150°C
TC = 25°C
DC line
Scaling for Different Case & Junction
Temperatures:
ID = ID(T = 25°C)*(TJ - TC)/125
100ms
TJ = 125°C
TC = 75°C
1
IDM
10
DC line
0.1
10
100
1200
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area
C
1
10
100
1200
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 10, Maximum Forward Safe Operating Area
0.35
D = 0.9
0.30
0.7
0.25
0.20
0.5
Note:
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.40
0.15
t1
0.3
t2
0.10
t1 = Pulse Duration
SINGLE PULSE
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0.1
0.05
0.05
0
10-5
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (seconds)
Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
1.0
D3PAK Package Outline
TO-247 (B) Package Outline
15.49 (.610)
16.26 (.640)
Drain
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Drain
(Heat Sink)
e3 100% Sn Plated
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05(.632)
13.79 (.543)
13.99(.551)
Revised
4/18/95
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15(.045)
13.41 (.528)
13.51(.532)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022) {3 Plcs}
050-8104
Rev B
5-2009
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
2.87 (.113)
3.12 (.123)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Gate
Drain
Source
Source
Drain
Gate
Dimensions in Millimeters (Inches)
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated