Yea Shin MUN5136DW Dual bias resistor transistor Datasheet

DATA SHEET
MUN5111DW Series
SEMICONDUCTOR
Dual Bias Resistor Transistors
H
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
6
5
4
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base–emitter resistor. These
digital transistors are designed to replace a single device and its external resistor bias network.
The BRT eliminates these individual components by integrating them into a single device. In
the LMUN5111DW1T1 series, two BRT devices are housed in the SOT–363 package which
is ideal for low–power surface mount applications where board space is at a premium.
. Simplifies Circuit Design
. Reduces Board Space
. Reduces Component Count
. Available in 8 mm, 7 inch/3000 Unit Tape and Reel
MAXIMUM RATINGS
1
2
3
SC-88/SOT-363
6
5
(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )
Symbol Value
V CBO
–50
V CEO
–50
IC
–100
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation
R1
Q2
Unit
Vdc
Vdc
mAdc
T A = 25°C
Derate above 25°C
R2
Q1
R2
R1
1
Symbol
PD
4
Max
Unit
187 (Note 1.)
256 (Note 2.)
1.5 (Note 1.)
mW
3
2
MARKING DIAGRAM
6
5
4
XX
mW/°C
2.0 (Note 2.)
Thermal Resistance –
R θJA
Junction-to-Ambient
670 (Note 1.)
°C/W
490 (Note 2.)
1
2
3
xx = Device Marking
= (See Page 2)
Characteristic
(Both Junctions Heated)
Total Device Dissipation
T A = 25°C
Derate above 25°C
Symbol
PD
Max
250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
Unit
mW
mW/°C
Thermal Resistance –
R θJA
493 (Note 1.)
°C/W
Junction-to-Ambient
Thermal Resistance –
R θJL
325 (Note 2.)
188 (Note 1.)
208 (Note 2.)
°C/W
T J , T stg
–55 to +150
°C
Junction-to-Lead
Junction and Storage
Temperature
1. FR–4 @ Minimum Pad
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DEVICE MARKING
INFORMATION
See specific marking information in
the device marking table on page 2 of
this data sheet.
2. FR–4 @ 1.0 x 1.0 inch Pad
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MUN5111DW Series
DEVICE MARKING AND RESISTOR VALUES
Device
Package
Marking
MUN5111DW
SOT–363
0A
MUN5112DW
SOT–363
0B
MUN5113DW
SOT–363
0C
MUN5114DW
SOT–363
0D
MUN5115DW(Note 3.)
SOT–363
0E
MUN5116DW (Note 3.)
SOT–363
0F
MUN5130DW (Note 3.)
SOT–363
0G
MUN5131DW (Note 3.)
SOT–363
0H
MUN5132DW (Note 3.)
SOT–363
0J
MUN5133DW (Note 3.)
SOT–363
0K
MUN5134DW (Note 3.)
SOT–363
0L
MUN5135DW (Note 3.)
SOT–363
0M
R 2(K)
10
22
47
47
–
–
1.0
2.2
4.7
47
47
47
Shipping
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
MUN5136DW (Note 3.)
SOT–363
0N
100
MUN5137DW (Note 3.)
SOT–363
0P
47
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )
100
22
3000/Tape & Reel
3000/Tape & Reel
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V CB = –50 V, I E = 0)
I CBO
Collector-Emitter Cutoff Current (V CE = –50 V, I B = 0)
I CEO
I EBO
Emitter-Base Cutoff Current
MUN51 11DW
(V EB = –6.0 V, I C = 0)
MUN5112DW
MUN5113DW
MUN5114DW
MUN5115DW
MUN5116DW
MUN5130DW
MUN5131DW
MUN5132DW
MUN5133DW
MUN5134DW
MUN5135DW
MUN5136DW
MUN5137DW
Collector-Base Breakdown Voltage (I C = –10 µA, I E = 0)
V (BR)CBO
Collector-Emitter Breakdown Voltage(Note 4.)(IC = –2.0 mA,I B=0) V (BR)CEO
Min
ON CHARACTERISTICS (Note 4.)
Collector-Emitter Saturation Voltage (IC= –10mA,IE= –0.3 mA)
(I C= –10mA, I B= –5mA)
(I C= –10mA, IB= –1mA)
R 1(K)
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
V CE(sat)
Typ
Max
Unit
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–50
–50
–
–
–
–100
–500
–0.5
nAdc
nAdc
mAdc
–
–0.2
–
–0.1
–
–0.2
–
–0.9
–
–1.9
–
–4.3
–
–2.3
–
–1.5
–
–0.18
–
–0.13
–
–0.2
–
–0.05
–
–
–
–0.13
–
–
Vdc
Vdc
–
–
–0.25
Vdc
MUN5130DW/MUN5131DW
MUN5115DW/LMUN5116DW
MUN5132DW/MUN5133DW/MUN5134DW
3. New resistor combinations. Updated curves to follow in subsequent data sheets.
4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
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ELECTRICAL CHARACTERISTICS
MUN5111DW Series
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ,)
Symbol
Characteristic
ON CHARACTERISTICS(Note 5.)
h FE
MUN5111DW
DC Current Gain
(V CE = –10 V, I C = –5.0 mA)
MUN5112DW
Output Voltage (on)
(V CC = –5.0 V, V B = –2.5 V, R L = 1.0 kΩ)
MUN5113DW
35
60
80
60
100
140
MUN5114DW
80
140
MUN5115DW
160
250
MUN5116DW
160
250
MUN5130DW
3.0
5.0
MUN5131DW
8.0
15
MUN5132DW
15
27
MUN5133DW
80
140
MUN5134DW
80
130
MUN5135DW
80
140
MUN5136DW
80
130
MUN5137DW
80
140
MUN5111DW
–
–
MUN5112DW
–
–
MUN5114DW
–
–
Max
–
–
–
–
–
–
–
–
–
–
–
–
–
Vdc
MUN5115DW
–
–
MUN5116DW
–
–
MUN5130DW
–
–
MUN5131DW
–
–
MUN5132DW
–
–
MUN5133DW
–
–
MUN5134DW
–
–
–
–
–
–
–
–
–
–4.9
–
–
3
V OH
Unit
–
V OL
MUN5135DW
(V CC = –5.0 V, V B = –3.5 V, R L = 1.0 kΩ) MUN5113DW
(V CC = –5.0 V, V B = –5.5 V, R L = 1.0 kΩ) MUN5136DW
(V CC = –5.0 V, V B = –4.0 V, R L = 1.0 kΩ) MUN5137DW
Output Voltage (off) (V CC = –5.0 V, V B = –0.5 V, R L = 1.0 kΩ)
(V CC = –5.0 V, V B = –0.05 V, R L = 1.0 kΩ) MUN5130DW
(V CC = –5.0 V, V B = –0.25 V, R L = 1.0 kΩ) MUN5115DW
MUN5116DW
MUN5131DW
MUN5133DW
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(Continued)
Typ
Min
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–
Vdc
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ELECTRICAL CHARACTERISTICS
MUN5111DW Series
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ,)
Characteristic
(Continued)
Symbol
Min
Typ
Max
Unit
R1
7.0
10
13
kΩ
MUN5112DW
15.4
22
28.6
ON CHARACTERISTICS(Note 5.)
Input Resistor
Resistor Ratio
MUN5111DW
MUN5113DW
32.9
47
61.1
MUN5114DW
7.0
10
13
MUN5115DW
7.0
10
13
MUN5116DW
3.3
4.7
6.1
MUN5130DW
0.7
1.0
1.3
MUN5131DW
1.5
2.2
2.9
MUN5132DW
3.3
4.7
6.1
MUN5133DW
3.3
4.7
6.1
15.4
1.54
70
32.9
22
2.2
100
47
28.6
2.86
130
61.1
0.8
0.17
–
0.8
0.055
0.38
0.038
1.7
1.0
0.21
–
1.0
0.1
0.47
0.047
2.1
1.2
0.25
–
1.2
0.185
0.56
0.056
2.6
MUN5134DW
MUN5135DW
MUN5136DW
MUN5137DW
MUN5111DW/MUN5112DW
MUN5113DW/MUN5136DW
MUN5114DW/MUN5115DW
MUN5116DW/MUN5130DW
MUN5131DW/MUN5132DW
MUN5133DW
MUN5134DW
MUN5135DW
MUN5137DW
R1 /R 2
5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
P D , POWER DISSIPATION (mW)
300
250
200
150
100
50
0
–50
0
50
100
150
T A , AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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DEVICE CHARACTERISTICS
MUN5111DW Series
1
0.1
0.01
0
20
40
50
h FE , DC CURRENT GAIN (NORMALIZED)
V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5 111DW
100
10
100
10
1
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 2. V CE(sat) versus I C
Figure 3. DC Current Gain
100
I C , COLLECTOR CURRENT (mA)
4
C ob CAPACITANCE (pF)
1000
3
2
1
10
1
0.1
0.01
0.001
0
0
1
0
2
0
0
3
0
50
0
4 1
2
3
4
5
6
7
8
9
10
V R , REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
V in , INPUT VOLTAGE (VOLTS)
100
10
1
0.1
0
10
20
30
40
50
I C , COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
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DEVICE CHARACTERISTICS
MUN5111DW Series
10
1
0.1
0.01
0
20
40
50
h FE , DC CURRENT GAIN (NORMALIZED)
V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5 112DW
100
10
1
10
I C , COLLECTOR CURRENT (mA)
100
I C , COLLECTOR CURRENT (mA)
Figure 7. V CE(sat) versus I C
Figure 8. DC Current Gain
100
I C , COLLECTOR CURRENT (mA)
4
C ob CAPACITANCE (pF)
1000
3
2
1
10
1
0.1
0.01
0.001
0
0
10
20
30
40
0
50
1
2
3
4
5
6
7
8
9
V R , REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance
Figure 10. Output Current versus Input voltage
V in , INPUT VOLTAGE (VOLTS)
100
10
1
0.1
0
10
20
30
40
50
I C ,COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
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DEVICE CHARACTERISTICS
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5113DW
1
0.1
0.01
0
20
40
50
h FE , DC CURRENT GAIN (NORMALIZED)
V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
MUN5111DW Series
100
10
1
10
100
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 12. V CE(sat) versus I C
Figure 13. DC Current Gain
1
100
I C , COLLECTOR CURRENT (mA)
C ob CAPACITANCE (pF)
1000
0.8
0.6
0.4
0.2
10
1
0.1
0.01
0.001
0
0
10
20
30
40
0
50
1
2
3
4
5
6
7
8
9
V R , REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 14. Output Capacitance
Figure 15. Output Current versus Input oltage
V in , INPUT VOLTAGE (VOLTS)
100
10
1
0.1
0
10
20
30
40
50
I C , COLLECTOR CURRENT (mA)
Figure 16. Input Voltage versus Output Current
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DEVICE CHARACTERISTICS
MUN5111DW Series
h FE , DC CURRENT GAIN (NORMALIZED)
V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5114DW
1
0.1
0.01
0.001
0
20
40
60
80
160
140
120
100
80
60
40
20
0
1
2
3
4
5
10
15
20
40
50
60 70
80
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 17. V CE(sat) versus I C
Figure 18. DC Current Gain
4.5
90 100
I C , COLLECTOR CURRENT (mA)
100
4
C ob CAPACITANCE (pF)
180
3.5
3
2.5
2
1.5
1
0.5
0
0
2
4
6
8
10
15
20
25
30
35
40
45
10
1
50
0
1
2
3
4
5
6
7
8
9
V R , REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 19. Output Capacitance
Figure 20. Output Current versus Input oltage
V in , INPUT VOLTAGE (VOLTS)
10
1
0.1
0
10
20
30
40
50
I C ,COLLECTOR CURRENT (mA)
Figure 21. Input Voltage versus Output Current
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DEVICE CHARACTERISTICS
MUN5111DW Series
h FE , DC CURRENT GAIN (NORMALIZED)
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5 115DW
1000
100
1
10
100
I C , COLLECTOR CURRENT (mA)
Figure 22. DC Current Gain
h FE , DC CURRENT GAIN (NORMALIZED)
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5116DW
1000
100
1
10
100
I C , COLLECTOR CURRENT (mA)
Figure 23. DC Current Gain
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DEVICE CHARACTERISTICS
MUN5111DW Series
h FE , DC CURRENT GAIN (NORMALIZED)
V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5136DW
1
0.1
0.01
0
1
2
3
4
5
6
7
1000
100
10
1
1
10
100
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 24. Maximum Collector Voltage versus
Figure 25. DC Current Gain
Collector Current
100
I C , COLLECTOR CURRENT (mA)
C ob CAPACITANCE (pF)
1.2
1.0
0.8
0.6
0.4
0.2
10
1
0.1
0
0
10
20
30
40
50
0
60
1
2
3
4
5
6
7
8
9
V R , REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 26. Output Capacitance
Figure 27. Output Current versus Input oltage
10
V in , INPUT VOLTAGE (VOLTS)
100
10
1
0
2
4
6
8
10
12
14
16
18
20
I C , COLLECTOR CURRENT (mA)
Figure 28. Input Voltage versus Output Current
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DEVICE CHARACTERISTICS
MUN5111DW Series
1
0.1
0.01
0
5
10
15
20
25
30
35
40
45
50
h FE , DC CURRENT GAIN (NORMALIZED)
V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5137DW
100
10
1
10
100
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 29. Maximum Collector Voltage versus
Collector Current
Figure 30. DC Current Gain
1.4
100
I C , COLLECTOR CURRENT (mA)
C ob CAPACITANCE (pF)
1000
1.2
1.0
0.8
0.6
0.4
0.2
10
1
0.1
0.01
0.001
0
0
10
20
30
40
50
0
60
1
2
3
4
5
6
7
8
9
10
V R , REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 31. Output Capacitance
Figure 32. Output Current versus Input oltage
11
V in , INPUT VOLTAGE (VOLTS)
100
10
1
0
5
10
15
20
25
I C , COLLECTOR CURRENT (mA)
Figure 33. Input Voltage versus Output Current
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PACKAGE OUTLINE & DIMENSIONS
MUN5111DW Series
SC-88/SOT-363
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A
G
DIM
6
5
4
- B-
S
1
2
3
0.2 (0.008) M B M
D6PL
N
J
A
B
C
D
G
H
J
K
N
S
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.031
0.043
0.004
0.012
0.026 BSC
--0.004
0.004
0.010
0.004
0.012
0.008 REF
0.079
0.087
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
--0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
C
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4.EMITTER 1
5. BASE 1
6.COLLECTOR 2
K
H
0.4 mm (min)
0.65 mm 0.65 mm
0.5 mm (min)
1.9 mm
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