DATA SHEET MUN5111DW Series SEMICONDUCTOR Dual Bias Resistor Transistors H PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 6 5 4 The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the LMUN5111DW1T1 series, two BRT devices are housed in the SOT–363 package which is ideal for low–power surface mount applications where board space is at a premium. . Simplifies Circuit Design . Reduces Board Space . Reduces Component Count . Available in 8 mm, 7 inch/3000 Unit Tape and Reel MAXIMUM RATINGS 1 2 3 SC-88/SOT-363 6 5 (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ) Symbol Value V CBO –50 V CEO –50 IC –100 Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation R1 Q2 Unit Vdc Vdc mAdc T A = 25°C Derate above 25°C R2 Q1 R2 R1 1 Symbol PD 4 Max Unit 187 (Note 1.) 256 (Note 2.) 1.5 (Note 1.) mW 3 2 MARKING DIAGRAM 6 5 4 XX mW/°C 2.0 (Note 2.) Thermal Resistance – R θJA Junction-to-Ambient 670 (Note 1.) °C/W 490 (Note 2.) 1 2 3 xx = Device Marking = (See Page 2) Characteristic (Both Junctions Heated) Total Device Dissipation T A = 25°C Derate above 25°C Symbol PD Max 250 (Note 1.) 385 (Note 2.) 2.0 (Note 1.) 3.0 (Note 2.) Unit mW mW/°C Thermal Resistance – R θJA 493 (Note 1.) °C/W Junction-to-Ambient Thermal Resistance – R θJL 325 (Note 2.) 188 (Note 1.) 208 (Note 2.) °C/W T J , T stg –55 to +150 °C Junction-to-Lead Junction and Storage Temperature 1. FR–4 @ Minimum Pad http://www.yeashin.com DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 2 of this data sheet. 2. FR–4 @ 1.0 x 1.0 inch Pad 1 REV.02 20120403 MUN5111DW Series DEVICE MARKING AND RESISTOR VALUES Device Package Marking MUN5111DW SOT–363 0A MUN5112DW SOT–363 0B MUN5113DW SOT–363 0C MUN5114DW SOT–363 0D MUN5115DW(Note 3.) SOT–363 0E MUN5116DW (Note 3.) SOT–363 0F MUN5130DW (Note 3.) SOT–363 0G MUN5131DW (Note 3.) SOT–363 0H MUN5132DW (Note 3.) SOT–363 0J MUN5133DW (Note 3.) SOT–363 0K MUN5134DW (Note 3.) SOT–363 0L MUN5135DW (Note 3.) SOT–363 0M R 2(K) 10 22 47 47 – – 1.0 2.2 4.7 47 47 47 Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel MUN5136DW (Note 3.) SOT–363 0N 100 MUN5137DW (Note 3.) SOT–363 0P 47 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ) 100 22 3000/Tape & Reel 3000/Tape & Reel Characteristic Symbol OFF CHARACTERISTICS Collector-Base Cutoff Current (V CB = –50 V, I E = 0) I CBO Collector-Emitter Cutoff Current (V CE = –50 V, I B = 0) I CEO I EBO Emitter-Base Cutoff Current MUN51 11DW (V EB = –6.0 V, I C = 0) MUN5112DW MUN5113DW MUN5114DW MUN5115DW MUN5116DW MUN5130DW MUN5131DW MUN5132DW MUN5133DW MUN5134DW MUN5135DW MUN5136DW MUN5137DW Collector-Base Breakdown Voltage (I C = –10 µA, I E = 0) V (BR)CBO Collector-Emitter Breakdown Voltage(Note 4.)(IC = –2.0 mA,I B=0) V (BR)CEO Min ON CHARACTERISTICS (Note 4.) Collector-Emitter Saturation Voltage (IC= –10mA,IE= –0.3 mA) (I C= –10mA, I B= –5mA) (I C= –10mA, IB= –1mA) R 1(K) 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 V CE(sat) Typ Max Unit – – – – – – – – – – – – – – – – –50 –50 – – – –100 –500 –0.5 nAdc nAdc mAdc – –0.2 – –0.1 – –0.2 – –0.9 – –1.9 – –4.3 – –2.3 – –1.5 – –0.18 – –0.13 – –0.2 – –0.05 – – – –0.13 – – Vdc Vdc – – –0.25 Vdc MUN5130DW/MUN5131DW MUN5115DW/LMUN5116DW MUN5132DW/MUN5133DW/MUN5134DW 3. New resistor combinations. Updated curves to follow in subsequent data sheets. 4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% http://www.yeashin.com 2 REV.02 20120403 ELECTRICAL CHARACTERISTICS MUN5111DW Series ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ,) Symbol Characteristic ON CHARACTERISTICS(Note 5.) h FE MUN5111DW DC Current Gain (V CE = –10 V, I C = –5.0 mA) MUN5112DW Output Voltage (on) (V CC = –5.0 V, V B = –2.5 V, R L = 1.0 kΩ) MUN5113DW 35 60 80 60 100 140 MUN5114DW 80 140 MUN5115DW 160 250 MUN5116DW 160 250 MUN5130DW 3.0 5.0 MUN5131DW 8.0 15 MUN5132DW 15 27 MUN5133DW 80 140 MUN5134DW 80 130 MUN5135DW 80 140 MUN5136DW 80 130 MUN5137DW 80 140 MUN5111DW – – MUN5112DW – – MUN5114DW – – Max – – – – – – – – – – – – – Vdc MUN5115DW – – MUN5116DW – – MUN5130DW – – MUN5131DW – – MUN5132DW – – MUN5133DW – – MUN5134DW – – – – – – – – – –4.9 – – 3 V OH Unit – V OL MUN5135DW (V CC = –5.0 V, V B = –3.5 V, R L = 1.0 kΩ) MUN5113DW (V CC = –5.0 V, V B = –5.5 V, R L = 1.0 kΩ) MUN5136DW (V CC = –5.0 V, V B = –4.0 V, R L = 1.0 kΩ) MUN5137DW Output Voltage (off) (V CC = –5.0 V, V B = –0.5 V, R L = 1.0 kΩ) (V CC = –5.0 V, V B = –0.05 V, R L = 1.0 kΩ) MUN5130DW (V CC = –5.0 V, V B = –0.25 V, R L = 1.0 kΩ) MUN5115DW MUN5116DW MUN5131DW MUN5133DW http://www.yeashin.com (Continued) Typ Min –0.2 –0.2 –0.2 –0.2 –0.2 –0.2 –0.2 –0.2 –0.2 –0.2 –0.2 –0.2 –0.2 –0.2 – Vdc REV.02 20120403 ELECTRICAL CHARACTERISTICS MUN5111DW Series ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ,) Characteristic (Continued) Symbol Min Typ Max Unit R1 7.0 10 13 kΩ MUN5112DW 15.4 22 28.6 ON CHARACTERISTICS(Note 5.) Input Resistor Resistor Ratio MUN5111DW MUN5113DW 32.9 47 61.1 MUN5114DW 7.0 10 13 MUN5115DW 7.0 10 13 MUN5116DW 3.3 4.7 6.1 MUN5130DW 0.7 1.0 1.3 MUN5131DW 1.5 2.2 2.9 MUN5132DW 3.3 4.7 6.1 MUN5133DW 3.3 4.7 6.1 15.4 1.54 70 32.9 22 2.2 100 47 28.6 2.86 130 61.1 0.8 0.17 – 0.8 0.055 0.38 0.038 1.7 1.0 0.21 – 1.0 0.1 0.47 0.047 2.1 1.2 0.25 – 1.2 0.185 0.56 0.056 2.6 MUN5134DW MUN5135DW MUN5136DW MUN5137DW MUN5111DW/MUN5112DW MUN5113DW/MUN5136DW MUN5114DW/MUN5115DW MUN5116DW/MUN5130DW MUN5131DW/MUN5132DW MUN5133DW MUN5134DW MUN5135DW MUN5137DW R1 /R 2 5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% P D , POWER DISSIPATION (mW) 300 250 200 150 100 50 0 –50 0 50 100 150 T A , AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve http://www.yeashin.com 4 REV.02 20120403 DEVICE CHARACTERISTICS MUN5111DW Series 1 0.1 0.01 0 20 40 50 h FE , DC CURRENT GAIN (NORMALIZED) V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS – MUN5 111DW 100 10 100 10 1 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 2. V CE(sat) versus I C Figure 3. DC Current Gain 100 I C , COLLECTOR CURRENT (mA) 4 C ob CAPACITANCE (pF) 1000 3 2 1 10 1 0.1 0.01 0.001 0 0 1 0 2 0 0 3 0 50 0 4 1 2 3 4 5 6 7 8 9 10 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage V in , INPUT VOLTAGE (VOLTS) 100 10 1 0.1 0 10 20 30 40 50 I C , COLLECTOR CURRENT (mA) Figure 6. Input Voltage versus Output Current http://www.yeashin.com 5 REV.02 20120403 DEVICE CHARACTERISTICS MUN5111DW Series 10 1 0.1 0.01 0 20 40 50 h FE , DC CURRENT GAIN (NORMALIZED) V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS – MUN5 112DW 100 10 1 10 I C , COLLECTOR CURRENT (mA) 100 I C , COLLECTOR CURRENT (mA) Figure 7. V CE(sat) versus I C Figure 8. DC Current Gain 100 I C , COLLECTOR CURRENT (mA) 4 C ob CAPACITANCE (pF) 1000 3 2 1 10 1 0.1 0.01 0.001 0 0 10 20 30 40 0 50 1 2 3 4 5 6 7 8 9 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 9. Output Capacitance Figure 10. Output Current versus Input voltage V in , INPUT VOLTAGE (VOLTS) 100 10 1 0.1 0 10 20 30 40 50 I C ,COLLECTOR CURRENT (mA) Figure 11. Input Voltage versus Output Current http://www.yeashin.com 6 REV.02 20120403 10 DEVICE CHARACTERISTICS TYPICAL ELECTRICAL CHARACTERISTICS – MUN5113DW 1 0.1 0.01 0 20 40 50 h FE , DC CURRENT GAIN (NORMALIZED) V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) MUN5111DW Series 100 10 1 10 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 12. V CE(sat) versus I C Figure 13. DC Current Gain 1 100 I C , COLLECTOR CURRENT (mA) C ob CAPACITANCE (pF) 1000 0.8 0.6 0.4 0.2 10 1 0.1 0.01 0.001 0 0 10 20 30 40 0 50 1 2 3 4 5 6 7 8 9 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 14. Output Capacitance Figure 15. Output Current versus Input oltage V in , INPUT VOLTAGE (VOLTS) 100 10 1 0.1 0 10 20 30 40 50 I C , COLLECTOR CURRENT (mA) Figure 16. Input Voltage versus Output Current http://www.yeashin.com 7 REV.02 20120403 10 DEVICE CHARACTERISTICS MUN5111DW Series h FE , DC CURRENT GAIN (NORMALIZED) V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS – MUN5114DW 1 0.1 0.01 0.001 0 20 40 60 80 160 140 120 100 80 60 40 20 0 1 2 3 4 5 10 15 20 40 50 60 70 80 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 17. V CE(sat) versus I C Figure 18. DC Current Gain 4.5 90 100 I C , COLLECTOR CURRENT (mA) 100 4 C ob CAPACITANCE (pF) 180 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 45 10 1 50 0 1 2 3 4 5 6 7 8 9 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 19. Output Capacitance Figure 20. Output Current versus Input oltage V in , INPUT VOLTAGE (VOLTS) 10 1 0.1 0 10 20 30 40 50 I C ,COLLECTOR CURRENT (mA) Figure 21. Input Voltage versus Output Current http://www.yeashin.com 8 REV.02 20120403 10 DEVICE CHARACTERISTICS MUN5111DW Series h FE , DC CURRENT GAIN (NORMALIZED) TYPICAL ELECTRICAL CHARACTERISTICS – MUN5 115DW 1000 100 1 10 100 I C , COLLECTOR CURRENT (mA) Figure 22. DC Current Gain h FE , DC CURRENT GAIN (NORMALIZED) TYPICAL ELECTRICAL CHARACTERISTICS – MUN5116DW 1000 100 1 10 100 I C , COLLECTOR CURRENT (mA) Figure 23. DC Current Gain http://www.yeashin.com 9 REV.02 20120403 DEVICE CHARACTERISTICS MUN5111DW Series h FE , DC CURRENT GAIN (NORMALIZED) V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS – MUN5136DW 1 0.1 0.01 0 1 2 3 4 5 6 7 1000 100 10 1 1 10 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 24. Maximum Collector Voltage versus Figure 25. DC Current Gain Collector Current 100 I C , COLLECTOR CURRENT (mA) C ob CAPACITANCE (pF) 1.2 1.0 0.8 0.6 0.4 0.2 10 1 0.1 0 0 10 20 30 40 50 0 60 1 2 3 4 5 6 7 8 9 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 26. Output Capacitance Figure 27. Output Current versus Input oltage 10 V in , INPUT VOLTAGE (VOLTS) 100 10 1 0 2 4 6 8 10 12 14 16 18 20 I C , COLLECTOR CURRENT (mA) Figure 28. Input Voltage versus Output Current http://www.yeashin.com 10 REV.02 20120403 DEVICE CHARACTERISTICS MUN5111DW Series 1 0.1 0.01 0 5 10 15 20 25 30 35 40 45 50 h FE , DC CURRENT GAIN (NORMALIZED) V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS – MUN5137DW 100 10 1 10 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 29. Maximum Collector Voltage versus Collector Current Figure 30. DC Current Gain 1.4 100 I C , COLLECTOR CURRENT (mA) C ob CAPACITANCE (pF) 1000 1.2 1.0 0.8 0.6 0.4 0.2 10 1 0.1 0.01 0.001 0 0 10 20 30 40 50 0 60 1 2 3 4 5 6 7 8 9 10 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 31. Output Capacitance Figure 32. Output Current versus Input oltage 11 V in , INPUT VOLTAGE (VOLTS) 100 10 1 0 5 10 15 20 25 I C , COLLECTOR CURRENT (mA) Figure 33. Input Voltage versus Output Current http://www.yeashin.com 11 REV.02 20120403 PACKAGE OUTLINE & DIMENSIONS MUN5111DW Series SC-88/SOT-363 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A G DIM 6 5 4 - B- S 1 2 3 0.2 (0.008) M B M D6PL N J A B C D G H J K N S INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 C PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4.EMITTER 1 5. BASE 1 6.COLLECTOR 2 K H 0.4 mm (min) 0.65 mm 0.65 mm 0.5 mm (min) 1.9 mm http://www.yeashin.com 12 REV.02 20120403