PD - 91313C IRHN7450SE 500V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) ® RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHN7450SE Radiation Level RDS(on) 100K Rads (Si) 0.51Ω ID 12A SMD-1 International Rectifiers RADHardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: ! ! ! ! ! ! ! ! ! Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight Units 12 7.0 48 151 1.2 ±20 500 12 15 4.2 -55 to 150 A W W/°C V mJ A mJ V/ns o 300 (for 5 sec.) 2.6 (Typical) C g For footnotes refer to the last page www.irf.com 1 5/31/01 IRHN7450SE @ Tj = 25°C (Unless Otherwise Specified) Parameter Min BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS /∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Typ Max Units Test Conditions 500 V VGS = 0V, ID = 1.0mA 0.6 V/°C Reference to 25°C, ID = 1.0mA 2.5 3.0 0.51 0.57 4.5 50 250 Ω VGS = 12V, ID = 7.0A ➃ VGS = 12V, ID = 12A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 7.0A ➃ VDS= 400V ,VGS=0V VDS = 400V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID = 12A VDS = 250V V S( ) Ω Electrical Characteristics Pre-Irradiation µA IGSS IGSS Qg Q gs Qgd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance 4.0 100 -100 140 35 75 35 60 75 60 Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance 2800 640 250 nA nC VDD =250V, ID =12A, VGS =12V, RG = 2.35Ω ns nH Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz pF Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ 12 48 A VSD t rr Q RR Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 1.6 500 9.6 V nS µC ton Forward Turn-On Time Test Conditions Tj = 25°C, IS = 12A, VGS = 0V ➃ Tj = 25°C, IF = 12A, di/dt ≤ 100A/µs VDD ≤ 50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJ-PCB Junction-to-Case Junction-to-PC board M i n Typ Max Units 6.6 0.83 °C/W Test Conditions Soldered to a 1 inch square clad PC board Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Pre-Irradiation IRHN7450SE International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter BVDSS V/5JD IGSS IGSS IDSS RDS(on) RDS(on) VSD Units Test Conditions " V µA VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20V VDS= 400V, VGS=0V Ω VGS = 12V, ID = 7.0A 0.51 Ω VGS = 12V, ID = 7.0A 1.6 V VGS = 0V, ID = 12A 100K Rads (Si) Min Max Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source# $ On-State Resistance (TO-3) Static Drain-to-Source# $ 500 2.0 4.5 100 -100 50 0.51 On-State Resistance (SMD-1) Diode Forward Voltage# $ nA International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Cu Br Ni V,5 (V) Range @V/5=0V @V/5=-5V @V/5=-10V @V/5=-15V @V/5=-20V (µm) 43 375 375 375 375 375 39 350 350 350 325 300 42 375 LET Energy MeV/(mg/cm )) (MeV) 28 285 36.8 305 26.6 265 400 VDS 300 Cu 200 Br Ni 100 0 0 -5 -10 -15 -20 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHN7450SE 100 Pre-Irradiation 100 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 10 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 1 5.0V 10 5.0V 1 20µs PULSE WIDTH TJ = 25 °C 0.1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) 3.0 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25 ° C TJ = 150 ° C 10 1 V DS = 50V 20µs PULSE WIDTH 6 7 8 9 10 11 12 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 10 100 Fig 2. Typical Output Characteristics 100 5 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 0.1 20µs PULSE WIDTH TJ = 150 °C 0.1 0.1 ID = 12A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( °C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 4000 Ciss 3000 2000 Coss 1000 0 Crss 20 VGS , Gate-to-Source Voltage (V) 5000 IRHN7450SE 10 12 8 4 100 FOR TEST CIRCUIT SEE FIGURE 13 0 30 60 90 120 150 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 150 ° C 100 I D , Drain Current (A) ISD , Reverse Drain Current (A) VDS = 400V VDS = 250V VDS = 100V 16 0 1 ID = 12 A 10 1 TJ = 25 ° C V GS = 0 V 0.1 0.0 0.4 0.8 1.2 1.6 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 2.0 10us 100us 10 1ms 10ms 1 0.1 TC = 25 ° C TJ = 150 ° C Single Pulse 10 100 1000 10000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHN7450SE Pre-Irradiation 12 RD VDS VGS 9 ID , Drain Current (A) D.U.T. RG + -VDD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 6 Fig 10a. Switching Time Test Circuit 3 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM 0.01 t1 t2 0.001 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHN7450SE L D.U.T. RG V/5 20V IAS DRIVER + - VDD 0.01Ω tp ID 5.4A 7.6A BOTTOM 12A TOP 1000 15V VDS EAS , Single Pulse Avalanche Energy (mJ) 1200 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS A 800 600 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ QG 12V .2µF .3µF 12 V QGS QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com D.U.T. IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHN7450SE Pre-Irradiation Footnotes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = 50V, starting TJ = 25°C, L= 6.9 mH Peak IL = 12A, VGS = 12V ➂ ISD ≤ 12A, di/dt ≤400A/µs, VDD ≤ 500V, TJ ≤ 150°C ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ Total Dose Irradiation with V DS Bias. 400 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions SMD-1 PAD ASSIGNMENTS IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.. Data and specifications subject to change without notice. 05/01 8 www.irf.com