DIGITRON SEMICONDUCTORS MCR22 SERIES SILICON CONTROLLED RECTIFIERS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS Rating Symbol Peak repetitive off-state voltage(1) (RGK = 1K, TJ = -40 to +110°C, sine wave, 50 to 60Hz) MCR22-2 MCR22-3 MCR22-4 MCR22-5 MCR22-6 MCR22-7 MCR22-8 Value 50 100 200 300 400 500 600 VDRM VRRM On-state RMS current (180° conduction angles, TC = 80°C) Unit IT(RMS) V 1.5 A Peak non-repetitive surge current (half-cycle, sine wave, 60Hz, TA = 25°C) ITSM Circuit fusing consideration (t = 8.3ms) I2t 0.9 A2s Forward peak gate power (pulse width ≤ 1.0µs, TA = 25°C) PGM 0.5 W Forward average gate power (t = 8.3ms, TA = 25°C) A 15 PG(AV) 0.1 W Forward peak gate current (pulse width ≤ 1.0µs, TA = 25°C) IGM 0.2 A Reverse peak gate voltage (pulse width ≤ 1.0µs, TA = 25°C) VRGM 5.0 V TJ -40 to +110 °C Tstg -40 to +150 °C Operating temperature range @ rated VRRM and VDRM Storage temperature range Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERMAL CHARACTERISTICS Symbol Maximum Unit Thermal resistance, junction to case Characteristic RӨJC 50 °C/W Thermal resistance, junction to ambient RӨJA 160 °C/W Lead solder temperature (lead length ≥ 1/16” from case, 10s max) TL °C 260 ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise noted) Characteristic Symbol Min Typ Max - - 10 200 - 1.2 1.7 - 30 - 200 500 - - 0.8 1.2 Unit OFF CHARACTERISTICS Peak forward or reverse blocking current (VAK = Rated VDRM or VRRM, RGK = 1000 Ω) TC = 25°C TC = 110°C IDRM, IRRM µA ON CHARACTERISTICS Peak forward on-state voltage* (ITM = 1A) Gate trigger current (continuous dc) (VAK = 6V, RL = 100Ω) TC = 25°C TC = -40°C VTM (2) IGT Gate trigger voltage (continuous dc) (2) (VAK = 7V, RL = 100Ω) TC = 25°C TC = -40°C 144 Market Street Kenilworth NJ 07033 USA V VGT phone +1.908.245-7200 fax +1.908.245-0555 [email protected] www.digitroncorp.com Rev. 20130115 µA V DIGITRON SEMICONDUCTORS MCR22 SERIES SILICON CONTROLLED RECTIFIERS Gate non-trigger voltage* (VAK = 12V, RL = 100Ω, TC = 110°C) VGD Holding current (VAK = 12V, gate open, initiating current = 200mA) TC = 25°C TC = -40°C IH 0.1 - - - 2.0 - 5.0 10 - 25 - V mA DYNAMIC CHARACTERISTICS Critical rate of rise of off-state voltage (TC = 110°C) dv/dt * Pulse width ≤ 1.0ms, duty cycle ≤ 1%. Note 2: RGK current not included in measurement. MECHANICAL CHARACTERISTICS Case TO-92 Marking Alpha-numeric Pin out See below 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 fax +1.908.245-0555 [email protected] www.digitroncorp.com Rev. 20130115 V/µs DIGITRON SEMICONDUCTORS MCR22 SERIES 144 Market Street Kenilworth NJ 07033 USA SILICON CONTROLLED RECTIFIERS phone +1.908.245-7200 fax +1.908.245-0555 [email protected] www.digitroncorp.com Rev. 20130115 DIGITRON SEMICONDUCTORS MCR22 SERIES 144 Market Street Kenilworth NJ 07033 USA SILICON CONTROLLED RECTIFIERS phone +1.908.245-7200 fax +1.908.245-0555 [email protected] www.digitroncorp.com Rev. 20130115