HAT2068R Silicon N Channel Power MOS FET Power Switching REJ03G1176-0500 (Previous: ADE-208-1225C) Rev.5.00 Sep 07, 2005 Features • • • • Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS (on) = 7 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 <FP-8DAV> ) 5 6 7 8 D D D D 65 87 1, 2, 3 4 5, 6, 7, 8 4 G 12 34 S S S 1 2 3 Rev.5.00 Sep 07, 2005 page 1 of 6 Source Gate Drain HAT2068R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol VDSS Value 30 Unit V VGSS ID ±20 14 V A 112 14 A A Gate to source voltage Drain current Note 1 Drain peak current Body-drain diode reverse drain current ID (pulse) IDR Channel dissipation Channel to ambient thermal impedance Pch Note 2 θ ch-a 2.5 50 W °C/W Tch Tstg 150 –55 to +150 °C °C Note 2 Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit V (BR) DSS V (BR) GSS 30 ±20 — — — — V V ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 IGSS IDSS — — — — ±10 1 µA µA VGS = ±16 V, VDS = 0 VDS = 30 V, VGS = 0 Gate to source cutoff voltage Static drain to source on state resistance VGS (off) RDS (on) 1.0 — — 7 2.5 9 V mΩ VDS = 10 V, ID = 1 mA Note 3 ID = 7 A, VGS = 10 V Forward transfer admittance RDS (on) |yfs| — 16 11 28 16 — mΩ S ID = 7 A, VGS = 4.5 V Note 3 ID = 7 A, VDS = 10 V Input capacitance Output capacitance Ciss Coss — — 1650 400 — — pF pF Reverse transfer capacitance Total gate charge Crss Qg — — 220 26 — — pF nC VDS = 10 V VGS = 0 f = 1 MHz Gate to source charge Gate to drain charge Qgs Qgd — — 5 5 — — nC nC Turn-on delay time Rise time td (on) tr — — 15 30 — — ns ns Turn-off delay time Fall time td (off) tf — — 50 10 — — ns ns Body-drain diode forward voltage Body-drain diode reverse recovery time VDF trr — — 0.80 50 1.10 — V ns Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Note: 3. Pulse test Rev.5.00 Sep 07, 2005 page 2 of 6 Test Conditions Note 3 VDD = 10 V VGS = 10 V ID = 14 A VGS = 10 V, ID = 7 A VDD ≈ 10 V RL = 1.43 Ω Rg = 4.7 Ω IF = 14 A, VGS = 0 IF = 14 A, VGS = 0 diF/dt = 50 A/µs Note 3 HAT2068R Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 500 3.0 100 ID (A) Test Condition: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s Drain Current Channel Dissipation Pch (W) 4.0 2.0 1.0 10 10 0µ µs s 1m PW s =1 Op era 0m tio s n( PW N 1 Operation in ≤ 1 ote 4 0s this area is ) limited by RDS (on) 0.1 DC 10 Ta = 25°C 1 shot Pulse 0 0 50 100 Ambient Temperature 0.01 0.1 200 150 0.3 1 3 10 Drain to Source Voltage Ta (°C) 30 100 VDS (V) Note 4: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) Typical Transfer Characteristics Typical Output Characteristics 50 50 Pulse Test 40 3.5 V 40 ID 4V VDS = 10 V Pulse Test (A) 4.5 V 30 30 20 Drain Current Drain Current ID (A) 10 V VGS = 3 V 10 20 25°C Tc = 75°C 10 –25°C 0 0 0 2 4 6 Drain to Source Voltage 8 10 0 0.16 0.12 0.08 ID = 10 A 0.04 5A 2A 0 0 4 8 12 Gate to Source Voltage Rev.5.00 Sep 07, 2005 page 3 of 6 16 20 VGS (V) 3 4 5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS (on) (mΩ) Drain to Source Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test 2 Gate to Source Voltage VDS (V) 0.20 1 100 Pulse Test 50 20 VGS = 4.5 V 10 10 V 5 2 1 0.1 0.2 0.5 1 2 5 10 20 Drain Current ID (A) 50 100 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS (on) (mΩ) HAT2068R 50 Pulse Test 40 30 ID = 2 A, 5 A 20 10 A VGS = 4.5 V 10 2 A, 5 A, 10 A 10 V 0 –40 0 40 80 Case Temperature 120 Tc 160 100 Tc = –25°C 30 10 75°C 3 25°C 1 0.3 VDS = 10 V Pulse Test 0.1 0.1 0.3 30 100 10000 Capacitance C (pF) 50 20 1 2 5 10 1000 Coss 300 Crss 100 VGS = 0 f = 1 MHz 0 20 10 20 30 40 50 Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 16 VDD = 25 V 10 V 5V 30 VDS 12 8 20 10 4 VDD = 25 V 10 V 5V 0 20 40 Gate Charge Rev.5.00 Sep 07, 2005 page 4 of 6 60 80 Qg (nc) 0 100 200 Switching Time t (ns) VGS 40 VGS (V) Reverse Drain Current IDR (A) ID = 14 A 0 Ciss 10 0.5 20 50 3000 30 di / dt = 50 A / µs VGS = 0, Ta = 25°C Gate to Source Voltage Reverse Recovery Time trr (ns) 10 Typical Capacitance vs. Drain to Source Voltage 100 10 0.1 0.2 VDS (V) 3 Drain Current ID (A) (°C) Body-Drain Diode Reverse Recovery Time Drain to Source Voltage 1 100 td(off) 50 tf 20 td(on) tr 10 5 VGS = 10 V, VDS = 10 V Rg = 4.7 Ω, duty ≤ 1 % 2 0.1 0.2 0.5 1 2 Drain Current 5 ID (A) 10 20 HAT2068R Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 50 10 V 40 5V 30 VGS = 0 20 10 Pulse Test 0 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 VSD (V) Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width 10 1 D=1 0.5 0.1 0.01 0.2 0.1 0.05 θch – f (t) = γ s (t) • θch – f θch – f = 83.3°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) 0.02 0.01 0.001 0.0001 10 µ 1s t ho pu lse D= PDM PW T PW T 100 µ 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (S) Switching Time Waveform Switching Time Test Circuit 90% Vout Monitor Vin Monitor D.U.T. Rg Vin Vout Vin 10 V VDS = 10 V 10% 10% 90% td(on) Rev.5.00 Sep 07, 2005 page 5 of 6 10% RL tr 90% td(off) tf HAT2068R Package Dimensions JEITA Package Code RENESAS Code P-SOP8-3.95 × 4.9-1.27 PRSP0008DD-D Package Name FP-8DAV 0.085g F *1 D MASS[Typ.] bp 1 c *2 E Index mark HE 5 8 4 Z Terminal cross section (Ni/Pd/Au plating) *3 bp x M NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. e Reference Symbol L1 Dimension in Millimeters Min Nom Max D 4.90 5.3 E 3.95 A2 A1 0.10 0.14 0.25 0.34 0.40 0.46 0.15 0.20 0.25 1.75 A A bp A1 b1 c L c1 0° y HE Detail F 5.80 e 8° 6.10 6.20 1.27 x 0.25 y 0.1 Z 0.75 L L1 0.40 0.60 1.27 1.08 Ordering Information Part Name Quantity Shipping Container HAT2068R-EL-E 2500 pcs Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.5.00 Sep 07, 2005 page 6 of 6 Sales Strategic Planning Div. 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