SemiHow HIH30N120TF 1200v field stop trench igbt Datasheet

VCES = 1200 V
IC = 30 A
HIH30N120TF
VCE(sat) typ = 2.0 V
1200V Field Stop Trench IGBT
TO-3P
FEATURES
‰ 1200V Field Stop Trench Technology
‰ High Speed Switching
‰ Low Conduction Loss
G
C
E
‰ Positive Temperature Coefficient
‰ Easy Parallel Operation
Absolute Maximum Ratings
Symbol
VCES
IC
Parameter
Collector-Emitter Voltage
Value
Units
1200
V
Collector Current
– Continuous (TC = 25୅)
60
A
Collector Current
– Continuous (TC = 100୅)
30
A
Collector Current
– Pulsed
90
A
Diode Forward Current – Continuous (TC = 25୅)
60
A
Diode Forward Current – Continuous (TC = 100୅)
30
A
IFM
Diode Current
90
A
VGES
Gate-Emitter Voltage
ρ20
V
329
W
ICM
IF
PD
– Pulsed
(Note 1)
(Note 1)
Power Dissipation
– Continuous (TC = 25୅)
Power Dissipation
– Continuous (TC = 100୅)
132
TJ
Operating Temperature Range
-55 to +150
୅
TSTG
Storage Temperature Range
-55 to +150
୅
TL
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
300
୅
Notes.
1. Pulse width limited by max junction temperature
Thermal Resistance Characteristics
Symbol
Parameter
Typ.
Max.
RșJC(IGBT)
Junction-to-Case
--
0.38
RșJC(Diode)
Junction-to-Case
--
2.1
RșJA
Junction-to-Ambient
--
40
Units
୅/W
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HIH30N120TF
Dec 2013
Device Marking
Week Marking
Package
Packing
Quantity
HIH30N120TF
YWWX
HIH30N120TF
YWWXg
TO-3P
Tube
30
Pb Free
TO-3P
Tube
30
Halogen Free
Electrical Characteristics of the IGBT TC=25 qC
Symbol
Parameter
RoHS Status
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
3.5
5.5
7.5
V
---
2.0
2.3
2.5
--
V
1200
--
--
V
On Characteristics
VGE(th)
Gate-Emitter Threshold Voltage
VCE = VGE, IC = 30 mA
VCE(sat)
Collector-Emitter Saturation
Voltage
VGE = 15 V,
IC = 30 A
TC = 25୅
TC = 125୅
Off Characteristics
BVCES
Collector-Emitter Breakdown
Voltage
VGE = 0 V, IC = 1 mA
ICES
Zero Gate Voltage Collector
Current
VCE = 1200 V, VGE = 0 V
--
--
1
mA
IGES
Gate-Emitter Leakage Current
VGE = ρ20 V, VCE = 0 V
--
--
ρ250
Ꮂ
--
4000
--
Ꮔ
--
105
--
Ꮔ
--
72
--
Ꮔ
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VCE = 30 V, VGE = 0 V,
f = 1.0 MHz
Switching Characteristics
Turn-On Time
--
40
--
Ꭸ
tr
Turn-On Rise Time
--
50
--
Ꭸ
td(off)
Turn-Off Delay Time
--
245
--
Ꭸ
--
70
150
Ꭸ
--
4.5
6.75
mJ
td(on)
tf
Turn-Off Fall Time
VCC = 600 V, IC = 30 A,
RG = 10 Ÿ9GE = 15V
Inductive load, TC = 25୅
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
--
0.85
1.28
mJ
Ets
Total Switching Loss
--
5.35
8.03
mJ
Turn-On Time
--
46
--
Ꭸ
tr
Turn-On Rise Time
--
48
--
Ꭸ
td(off)
Turn-Off Delay Time
--
Ꭸ
td(on)
tf
Turn-Off Fall Time
VCC = 600 V, IC = 30 A,
RG = 10 Ÿ9GE = 15V
Inductive load, TC = 125୅
256
--
--
142
--
Ꭸ
--
4.87
7.3
mJ
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
--
1.82
2.73
mJ
Ets
Total Switching Loss
--
6.67
10.03
mJ
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector Charge
VCC = 600V, IC = 30 A,
VGE = 15 V
--
220
330
nC
--
30
45
nC
--
90
135
nC
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HIH30N120TF
Package Marking and Odering Information
VFM
Diode Forward Voltage
trr
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery
Current
Qrr
Diode Reverse Recovery Charge
IF = 30 A
TC = 25୅
TC = 125୅
TC = 25୅
TC = 125୅
IF = 30 A,
di/dt = 200 A/ȝV
TC = 25୅
TC = 125୅
TC = 25୅
TC = 125୅
---
2.25
2.53
2.75
--
V
---
300
360
450
--
ns
---
30
34
45
--
A
---
4400
6120
---
nC
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HIH30N120TF
Electrical Characteristics of the Diode
HIH30N120TF
IGBT Characteristics
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HIH30N120TF
IGBT Characteristics
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͤ͑͢͡
HIH30N120TF
IGBT Characteristics
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͤ͑͢͡
HIH30N120TF
Diode Characteristics
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HIH30N120TF
Package Dimension
{vTZwG
15.6±0.20
13.6±0.20
9.6±0.20
4.8±0.20
1.5±0.20
13.9±0.20
14.9±0.20
19.9±0.20
ij
.20
18.7±0.20
±0
5.45typ
3.5±0.20
3±0.20
2±0.20
1±0.20
16.5±0.20
1.4±0.20
0.6±0.20
5.45typ
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