JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC327/ BC328 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation 1. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 2.BASE Symbol 3. EMITTER Parameter Value VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage Unit VEBO Emitter-Base Voltage -50 -30 -45 -25 -5 IC Collector Current -Continuous -800 mA PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ BC327 BC328 BC327 BC328 V V V ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Symbol Parameter Collector-base breakdown voltage BC327 BC328 Collector-emitter breakdown voltage BC327 BC328 VCBO VCEO Test conditions IC= -100uA, IE=0 IC= -10mA , IB=0 Min Typ Max Unit -50 -30 V -45 -25 V -5 V VEBO IE= -10uA, IC=0 BC327 BC328 ICBO VCB= -45 V , IE=0 VCB= -25V , IE=0 -0.1 -0.1 uA BC327 BC328 ICEO VCE= -40 V , IB=0 VCE= -20 V , IB=0 -0.2 -0.2 uA IEBO VEB= -4 V , -0.1 uA hFE(1) VCE=-1 V, IC= -100mA 100 hFE(2) VCE=-1 V, IC= -300mA 40 Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain IC=0 630 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB= -50mA -0.7 V Base-emitter saturation voltage VBE(sat) IC= -500mA, IB=-50mA -1.2 V VBE VCE=-1 V, IC= -300mA -1.2 V fT VCE= -5V, IC= -10mA f = 100MHz VCB=-10V,IE=0 f=1MHZ Base-emitter voltage Transition frequency Cob Collector Output Capacitance MHz 260 12 pF CLASSIFICATION OF hFE Rank Range www.cj-elec.com 16 25 40 100-250 160-400 250-630 1 ','HF,201 Typical Characteristics Typical Characterisitics BC328 hFE Static Characteristic -300 COMMON EMITTER Ta=25℃ Ta=100℃ -0.7mA DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) -0.8mA -0.6mA -200 -0.5mA -0.4mA -0.3mA -100 -0.2mA Ta=25℃ 100 IB=-0.1mA COMMON EMITTER VCE= -1V -0 10 -0 -2 -4 COLLECTOR-EMITTER VOLTAGE VCEsat -1 —— -6 VCE -7 -10 -800 -100 (V) COLLECTOR CURRENT IC VBEsat —— IC (mA) IC -2 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) —— IC 1000 -1.0mA -0.9mA -0.1 Ta=100℃ -1 Ta=25℃ Ta=100℃ Ta=25℃ β=10 β=10 -0.01 -0.3 -1 COLLECTOR CURRENT IC —— IC -0.1 -800 -100 -10 -1 (mA) COLLECTOR CURRENT VBE TRANSITION FREQUENCY fT (MHz) T= a 25 ℃ ℃ T= a 10 0 COLLECTOR CURRENT IC (mA) -100 -1 COMMON EMITTER VCE=-1V -0.1 -0.0 fT 1000 -800 -10 -0.6 -0.9 Cob/ Cib -5 COLLECTOR POWER DISSIPATION PC (mW) CAPACITANCE C (pF) Cob REVERSE VOLTAGE www.cj-elec.com -10 VR —— IC (mA) Ta 600 Ta=25 ℃ -1 PC 700 10 1 -0.1 -100 -10 COLLECTOR CURRENT f=1MHz IE=0/IC=0 Cib IC —— Ta=25℃ -1.2 —— VCB/ VEB -800 (mA) COMMON EMITTER VCE=-5V BASE-EMMITER VOLTAGE VBE (V) 100 IC 100 10 -0.3 -100 -10 500 400 300 200 100 0 -20 0 25 50 75 AMBIENT TEMPERATURE (V) 2 125 100 Ta 150 (℃ ) ','HF,201 TO-92 Package Outline Dimensions Symbol A A1 b c D D1 E e e1 L Φ h Dimensions In Millimeters Min Max 3.300 3.700 1.100 1.400 0.380 0.550 0.360 0.510 4.300 4.700 3.430 4.300 4.700 1.270 TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.130 0.146 0.043 0.055 0.015 0.022 0.014 0.020 0.169 0.185 0.135 0.169 0.185 0.050 TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 TO-92 Suggested Pad Layout www.cj-elec.com 3 D,Dec,2015 TO-92 7DSHDQG5HHO ZZZFMHOHFFRP4 D,Dec,2015