, (Jnc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
IRFF9230, IRFF9231, IRFF9232, IRFF9233
Avalanche-Energy-Rated
P-Channel Power MOSFETs
-3.5 A and -4.0 A, -150 V and -200 V
ros(on) = 0.8 fi and 1.2 O
TERMINAL DIAGRAM
Feature*:
• Single pulse avalanche energy rated
• SOA is power-dissipation limited
• Nanosecond switching speeds
• Linear transfer characteristics
• High input impedance
P-CHANNEL ENHANCEMENT MODE
The IRFF9230, IRFF9231, IRFF9232 and IRFF9233 are
advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. These are pchannel enhancement-mode silicon gate power field-effect
transistors designed for applications such as switching
regulators, switching converters, motor drivers, relay
drivers, and drivers for high-power bipolar switching
transistors requiring high speed and low gate-drive power.
These types can be operated directly from integrated
circuits.
The IRFF-types are supplied in the JEDEC TO-205AF (LowProfile TO-39) metal package.
TERMINAL DESIGNATION
SOURCE
JEDEC TO-205AF
ABSOLUTE-MAXIMUM RATINGS
CHARACTERISTIC
Drain-Source Voltage 0
Drain-Gate Voltage (Ro. = 20 kO) 0
Continuous Drain Current
Pulsed Drain Current 0
Gate-Source Voltage
Maximum Power Dissipation
Linear Derating Factor
Single-Pulse Avalanche Energy Rating 0
Operating Junction and Storage Temperature
Range
Lead Temperature
Quality Semi-Conductors
Vos
VMB
ID @ Tc = 25° C
IDM
Vga
PD @ Tc = 25° C
£„
_ _
Tj, Twg
IRFF9230
-200
-200
-4.0
IRFF9231
-150
-150
-4.0
IRFF9232
-200
-200
-3.5
IRFF9233
-150
-150
-3.5
-16
-16
-14
-14
UNITS
V
VA
A
±20
V
25 (See Fig. 14)
0.2 (See Fig. 14)
500
W/"C
-55 to +150
•c
300 (0,063 in. (1.6mm) from case lor 10s)
«c
W
mj
, IJnc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
ELECTRICAL CHARACTERISTICS, At Tc = 25° C (Unto* OthwwlM Specified)
CHAHACTCRIWC
Drain-Source Breakdown Voltage
TYPK
BVpw
IRFF9230
IRFF9232
IRFF8231
IRFF9233
Gate Threshold Voltage
MM.
TYP. MAX.
V
V0. = 0 V
-
-
V
I0 = -250 //A
V
V M -V M , lo--250/iA
nA
Va. - -20 V
-
-150
ALL
-2.0
-
-4.0
lam
ALL
-
-
-100
Gate-Source Leakage Reverse
low
ALL
Zero-Gate Voltage Drain Current
IMS
On-State Drain Current 0
lo(on)
ALL
IRFF9232
IRFF9233
Static Drain-Source On-State
rM(on)
Resistance ©
-
-
100
DA
rv,,, = 2ov
-
-
-250
HA
VM = Max. Rating, Vo. • 0 V
—
—
-1000
M
VD« = Max. Rating x 0.8. Va. • 0 V. Tc - 125°C
-4.0
-
-
A
-3.5
-
-
A
-
0.5
0.8
n
-
0.8
1.2
n
IRFF9230
IRFF9231
IRFF9230
IRFF9231
IRFF9232
IRFF9233
TUT CONDITION*
-
-ZOO
Vo.lth)
Gate-Source Leakage Forward
UNITS
VOB ~ 10V ID"
20A
Vo, > lo(on) x ros(on) max., ID - 2.0 A
Forward Tranaconductance (a)
g»
ALL
22
3.5
—
S(U)
Input Capacitance
CM
ALL
550
C...
ALL
_.
PF
Output Capacitance
Reverse Transfer Capacitance
C*,
ALL
50
-
pF
Won)
ALL
-
30
50
ns
VOD - O.S BVoaa, ID = 2.0 A. Za = 50 0
I,
ALL
—
I 50
100
na
S««Flg. 17
-
50
100
ns
(MOSFET switching times are essentially
40
80
na
Turn-On Delay Time
Hue Time
Turn-Off Delay Time
t«(off)
ALL
Fall Time
t<
ALL
Total Gate Charge
Q0
(Gate-Source Plus Gate-Drain)
170
V« = 0 V Voa = -25 V f = 1 0 MHz
PF
ALL
-
31
45
nC
Gate-Source Charge
Q,.
ALL
-
18
26
nC
Gate-Drain (("Miller") Charge
Q*
ALL
13
IB
nC
Internal Drain Inductance
LD
ALL
i_Z_
Internal Source Inductance
U
ALL
independent of operating temperature.)
Vo» • -15 V, ID = -8.0 A, Vo> = 0.8 Max. Rating.
3«e Fig. 18 for teat circuit. (Gats charge is essentially
Independent of operating temperature.)
5.0
nH
Measured from the drain
lead, 5mm (0.2 in.)
from header to center
of die.
"TS.O
^ik
Measuredlrom the
Modified MOSFET
symbol showing The
internal device
inductances.
°
from header to source
bonding pad.
Junctlon-to-Case
R«ie
ALL
-
-
5,0
1,
(Body Diode)
IRFF9230
IRFF9231
IRFF9232
IRFF9233
Pulse Source Current
)>M
(Body Diode) ®
IRFF9230
IRFF9231
IRFF9232
IRFF9233
Diode Forward Voltage®
V»
IRFF9230
IRFF9231
IRFF9232
IRFF9233
Modified MOSFET symbol
-
-4.0
A
-
-
-3.5
A
-
-
-16
A
-
-
-14
A
-
-
-1.5
V
TC = 25°C, I.--4.0A, Vo. = OV
-
_
-1.5
V
To = 25° C, Is • -3.5 A, Voi - 0 V
ns
Tj * 1SO*C, Ir = -4.0 A, d!p/dt = 100 A/ps
t.
ALL
—
400
—
QM
ALL
—
2.6
—
Forward Turn-on Time
U
ALL
s
Typical socket mount.
-
Revert* Recovered Charge
Reverse Recovery Time
~^
"C/W
Junction- to- Ambient
Ftju
ALL
>75
•c/w
—
—
SOURCE-DRAIN DIODE RATINQS AMD CHARACTERISTICS
Continuous Source Current
/ 1 [~7t \e lead, 5mm (0.2 in.)
showing the integral
reverse P-N junction rectifier,
s
Tj = 150*C, Ir - -4.0 A, dWdt « 100 A/*S
&
Intrinsic turn-on time Is negligible. Turn-on spaed Is substantially controlled by Lt + LD.
0 Repetitive Ruing; Pulse width limited
®Tj-25'CtolSO-C
by max junction temperature
<5 Pulse Teat: Pulse width < 300 pi.
See Transient Thermal Impedance Curve (Fig. 5).
Duty Cycle £ 2%
© Vno = 50 V, Starting Tj = 25* C. L - 46.9 mH.
R« • 25 a Peek IL = 4.0 A (See Figs. 15 A 16).