MMSZ2V4ET1 Series Zener Voltage Regulators 500 mW SOD−123 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD−123 package. These devices provide a convenient alternative to the leadless 34−package style. http://onsemi.com Specification Features • • • • • • 500 mW Rating on FR−4 or FR−5 Board Wide Zener Reverse Voltage Range − 2.4 V to 56 V Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications ESD Rating of Class 3 (>16 kV) per Human Body Model Peak Power − 225 W (8 X 20 s) 1 Cathode 2 Anode 2 Mechanical Characteristics CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 1 SOD−123 CASE 425 STYLE 1 260°C for 10 Seconds POLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V−0 MARKING DIAGRAM ÂÂ ÂÂ ÂÂ MAXIMUM RATINGS Symbol Max Unit Peak Power Dissipation @ 20 s (Note 1) @ TL ≤ 25°C Rating Ppk 225 Watts Total Power Dissipation on FR−5 Board, (Note 2) @ TL = 75°C Derated above 75°C PD 500 6.7 mW mW/°C 340 °C/W Thermal Resistance − Junction−to−Ambient (Note 3) RJA Thermal Resistance − Junction−to−Lead (Note 3) RJL 150 °C/W TJ, Tstg −55 to +150 °C Junction and Storage Temperature Range June, 2004 − Rev. 1 1 = Specific Device Code = Date Code ORDERING INFORMATION Package Shipping† MMSZxxxET1 SOD−123 3000/Tape & Reel MMSZxxxET3 SOD−123 10,000/Tape & Reel Device Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse per Figure 11 2. FR−5 = 3.5 X 1.5 inches, using the On minimum recommended footprint as shown in Figure 12. 3. Thermal Resistance measurement obtained via infrared Scan Method Semiconductor Components Industries, LLC, 2004 xx M xx M †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics table on page 2 of this data sheet. Publication Order Number: MMSZ2V4ET1/D MMSZ2V4ET1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless I otherwise noted, VF = 0.95 V Max. @ IF = 10 mA) Symbol IF Parameter VZ Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF VZ VR V IR VF IZT Zener Voltage Regulator ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA) VZ1 (V) (Notes 4 and 5) ZZT1 (Note 6) VZ2 (V) (Notes 4 and 5) @ IZT1 = 5 mA ZZT2 (Note 6) Leakage Current @ IZT2 = 1 mA IR @ VR Device Device Marking Min Nom Max Min Max A V MMSZ2V4ET1 CL1 2.28 2.4 2.52 100 1.7 2.1 600 50 1 MMSZ2V7ET1 CL2 2.57 2.7 2.84 100 1.9 2.4 600 20 1 MMSZ3V0ET1 CL3 2.85 3.0 3.15 95 2.1 2.7 600 10 1 MMSZ3V3ET1 CL4 3.14 3.3 3.47 95 2.3 2.9 600 5 1 MMSZ3V6ET1 CL5 3.42 3.6 3.78 90 2.7 3.3 600 5 1 MMSZ3V9ET1 CL6 3.71 3.9 4.10 90 2.9 3.5 600 3 1 MMSZ4V3ET1 CL7 4.09 4.3 4.52 90 3.3 4.0 600 3 1 MMSZ4V7ET1 CL8 4.47 4.7 4.94 80 3.7 4.7 500 3 2 MMSZ5V1ET1 CL9 4.85 5.1 5.36 60 4.2 5.3 480 2 2 MMSZ5V6ET1 CM1 5.32 5.6 5.88 40 4.8 6.0 400 1 2 MMSZ6V2ET1 CM2 5.89 6.2 6.51 10 5.6 6.6 150 3 4 MMSZ6V8ET1 CM3 6.46 6.8 7.14 15 6.3 7.2 80 2 4 MMSZ7V5ET1 CM4 7.13 7.5 7.88 15 6.9 7.9 80 1 5 MMSZ8V2ET1 CM5 7.79 8.2 8.61 15 7.6 8.7 80 0.7 5 MMSZ9V1ET1 CM6 8.65 9.1 9.56 15 8.4 9.6 100 0.5 6 MMSZ10ET1 CM7 9.50 10 10.50 20 9.3 10.6 150 0.2 7 MMSZ11ET1 CM8 10.45 11 11.55 20 10.2 11.6 150 0.1 8 MMSZ12ET1 CM9 11.40 12 12.60 25 11.2 12.7 150 0.1 8 MMSZ13ET1 CN1 12.35 13 13.65 30 12.3 14.0 170 0.1 8 MMSZ15ET1 CN2 14.25 15 15.75 30 13.7 15.5 200 0.05 10.5 MMSZ16ET1 CN3 15.20 16 16.80 40 15.2 17.0 200 0.05 11.2 MMSZ18ET1 CN4 17.10 18 18.90 45 16.7 19.0 225 0.05 12.6 Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value. 4. The type numbers shown have a standard tolerance of ±5% on the nominal Zener Voltage. 5. Tolerance and Voltage Designation: Zener Voltage (VZ) is measured with the Zener Current applied for PW = 1 ms. 6. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC) = 0.1 IZ(DC), with the AC frequency = 1 kHz. http://onsemi.com 2 MMSZ2V4ET1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA) VZ1 (V) (Notes 4 and 5) ZZT1 (Note 6) VZ2 (V) (Notes 4 and 5) @ IZT1 = 5 mA ZZT2 (Note 6) Leakage Current IR @ VR @ IZT2 = 1 mA Device Device Marking Min Nom Max Min Max A MMSZ20ET1 CN5 19.00 20 21.00 55 18.7 21.1 225 0.05 14 MMSZ22ET1 CN6 20.90 22 23.10 55 20.7 23.2 250 0.05 15.4 MMSZ24ET1 CN7 22.80 24 25.20 70 22.7 25.5 250 0.05 16.8 MMSZ27ET1 CN8 25.65 27 28.35 80 25 28.9 300 0.05 18.9 MMSZ30ET1 CN9 28.50 30 31.50 80 27.8 32 300 0.05 21 MMSZ33ET1 CP1 31.35 33 34.65 80 30.8 35 325 0.05 23.1 MMSZ36ET1 CP2 34.20 36 37.80 90 33.8 38 350 0.05 25.2 MMSZ39ET1 CP3 37.05 39 40.95 130 36.7 41 350 0.05 27.3 MMSZ43ET1 CP4 40.85 43 45.15 150 39.7 46 375 0.05 30.1 MMSZ47ET1 CP5 MMSZ51ET1 CP6 48.45 51 53.55 180 47.6 54 400 0.05 35.7 MMSZ56ET1 CP7 53.20 56 58.80 200 51.5 60 425 0.05 39.2 V Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value. 4. The type numbers shown have a standard tolerance of ±5% on the nominal Zener Voltage. 5. Tolerance and Voltage Designation: Zener Voltage (VZ) is measured with the Zener Current applied for PW = 1 ms. 6. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC) = 0.1 IZ(DC), with the AC frequency = 1 kHz. http://onsemi.com 3 MMSZ2V4ET1 Series 8 100 7 θ VZ, TEMPERATURE COEFFICIENT (mV/°C) θ VZ, TEMPERATURE COEFFICIENT (mV/°C) TYPICAL CHARACTERISTICS TYPICAL TC VALUES FOR MMSZ2V4T1 SERIES 6 5 4 10 VZ @ IZT 3 2 1 0 −1 −2 1−3 2 3 4 5 6 7 8 9 10 VZ, NOMINAL ZENER VOLTAGE (V) 11 TYPICAL TC VALUES FOR MMSZ2V4T1 SERIES VZ @ IZT 12 10 100 VZ, NOMINAL ZENER VOLTAGE (V) Figure 1. Temperature Coefficients (Temperature Range − 55°C to +150°C) Figure 2. Temperature Coefficients (Temperature Range − 55°C to +150°C) 1000 Ppk, PEAK SURGE POWER (WATTS) P D, POWER DISSIPATION (WATTS) 1.2 1.0 PD versus TL 0.8 0.6 100 PD versus TA 0.4 0.2 0 0 25 50 75 100 T, TEMPERATURE (°C) RECTANGULAR WAVEFORM, TA = 25°C 125 10 1 150 0.1 Figure 3. Steady State Power Derating 1000 1000 IZ = 1 mA TJ = 25°C IZ(AC) = 0.1 IZ(DC) f = 1 kHz IF, FORWARD CURRENT (mA) Z ZT, DYNAMIC IMPEDANCE (Ω ) 10 100 PW, PULSE WIDTH (ms) Figure 4. Maximum Nonrepetitive Surge Power 1000 100 75 V (MMSZ5267BT1) 91 V (MMSZ5270BT1) 100 5 mA 20 mA 10 1 1 1 10 VZ, NOMINAL ZENER VOLTAGE 100 10 150°C 1 0.4 Figure 5. Effect of Zener Voltage on Zener Impedance 0.5 25°C 0°C 75°C 0.6 0.7 0.8 0.9 1.0 VF, FORWARD VOLTAGE (V) Figure 6. Typical Forward Voltage http://onsemi.com 4 1.1 1.2 MMSZ2V4ET1 Series TYPICAL CHARACTERISTICS 1000 TA = 25°C 0 V BIAS 1 V BIAS C, CAPACITANCE (pF) I R , LEAKAGE CURRENT ( µA) 1000 100 BIAS AT 50% OF VZ NOM 1 10 1 +150°C 0.1 0.01 10 1 100 10 VZ, NOMINAL ZENER VOLTAGE (V) 100 0.001 + 25°C 0.0001 −55°C 0.00001 0 10 Figure 7. Typical Capacitance 20 30 40 50 60 70 VZ, NOMINAL ZENER VOLTAGE (V) Figure 8. Typical Leakage Current 100 100 I Z , ZENER CURRENT (mA) TA = 25°C 10 1 10 1 0.1 0.1 0 2 4 6 8 VZ, ZENER VOLTAGE (V) 0.01 12 10 10 100 50 70 VZ, ZENER VOLTAGE (V) PEAK VALUE IRSM @ 8 s tr 90 30 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 s 80 70 60 HALF VALUE IRSM/2 @ 20 s 50 40 30 tP 20 10 0 0 20 90 Figure 10. Zener Voltage versus Zener Current (12 V to 91 V) Figure 9. Zener Voltage versus Zener Current (VZ Up to 12 V) % OF PEAK PULSE CURRENT I Z , ZENER CURRENT (mA) TA = 25°C 0.01 80 40 60 t, TIME (s) Figure 11. 8 × 20 s Pulse Waveform http://onsemi.com 5 80 90 MMSZ2V4ET1 Series PACKAGE DIMENSIONS SOD−123 CASE 425−04 ISSUE C A ÂÂÂÂ ÂÂÂÂ C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. H 1 K DIM A B C D E H J K B E 2 INCHES MIN MAX 0.055 0.071 0.100 0.112 0.037 0.053 0.020 0.028 0.01 −−− 0.000 0.004 −−− 0.006 0.140 0.152 MILLIMETERS MIN MAX 1.40 1.80 2.55 2.85 0.95 1.35 0.50 0.70 0.25 −−− 0.00 0.10 −−− 0.15 3.55 3.85 STYLE 1: PIN 1. CATHODE 2. ANODE J D SOLDERING FOOTPRINT ÉÉ ÉÉ ÉÉ 0.91 0.036 2.36 0.093 4.19 0.165 ÉÉ ÉÉ ÉÉ SCALE 10:1 1.22 0.048 mm inches Figure 12. SOD−123 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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