NSS60200L 60 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. www.onsemi.com −60 VOLTS, 4.0 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 80 mW COLLECTOR 3 1 BASE Features • NSV Prefix for Automotive and Other Applications Requiring • 2 EMITTER Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 3 1 MAXIMUM RATINGS (TA = 25°C) 2 Rating SOT−23 (TO−236) CASE 318 STYLE 6 Symbol Max Unit Collector-Emitter Voltage VCEO −60 Vdc Collector-Base Voltage VCBO −80 Vdc Emitter-Base Voltage VEBO −7.0 Vdc IC −2.0 A ICM −4.0 A Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 1) 460 mW 3.7 mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 1) 270 °C/W Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 2) 540 mW 4.3 mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 2) 230 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Collector Current − Continuous Collector Current − Peak MARKING DIAGRAM VG MG G THERMAL CHARACTERISTICS Characteristic Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 4 @ 100 mm2, 1 oz. copper traces. 2. FR− 4 @ 500 mm2, 1 oz. copper traces. © Semiconductor Components Industries, LLC, 2015 August, 2015 − Rev. 2 1 1 VG = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† NSS60200LT1G SOT−23 (Pb−Free) 3000/Tape & Reel NSV60200LT1G SOT−23 (Pb−Free) 3000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NSS60200L/D NSS60200L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max −60 − − −80 − − −7.0 − − − − −0.1 − − −0.1 150 150 100 100 − 300 − − − − − − − − − − −0.017 −0.095 −0.180 −0.170 −0.030 −0.120 −0.270 −0.220 − − −0.900 − − −0.850 100 − − Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = −60 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = −6.0 Vdc) IEBO Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS hFE DC Current Gain (Note 3) (IC = −10 mA, VCE = −2.0 V) (IC = −500 mA, VCE = −2.0 V) (IC = −1.0 A, VCE = −2.0 V) (IC = −2.0 A, VCE = −2.0 V) Collector −Emitter Saturation Voltage (Note 3) (IC = −0.1 A, IB = −0.010 A) (IC = −1.0 A, IB = −0.100 A) (IC = −1.0 A, IB = −0.010 A) (IC = −2.0 A, IB = −0.200 A) VCE(sat) Base −Emitter Saturation Voltage (Note 3) (IC = −1.0 A, IB = −0.010 A) VBE(sat) Base −Emitter Turn−on Voltage (Note 3) (IC = −1.0 A, VCE = −2.0 V) VBE(on) Cutoff Frequency (IC = −100 mA, VCE = −5.0 V, f = 100 MHz) V V V fT MHz Input Capacitance (VEB = 0.5 V, f = 1.0 MHz) Cibo − − 325 pF Output Capacitance (VCB = 3.0 V, f = 1.0 MHz) Cobo − − 62 pF Delay (VCC = −30 V, IC = 750 mA, IB1 = 15 mA) td − − 60 ns Rise (VCC = −30 V, IC = 750 mA, IB1 = 15 mA) tr − − 120 ns Storage (VCC = −30 V, IC = 750 mA, IB1 = 15 mA) ts − − 400 ns Fall (VCC = −30 V, IC = 750 mA, IB1 = 15 mA) tf − − 130 ns SWITCHING CHARACTERISTICS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. www.onsemi.com 2 NSS60200L TYPICAL CHARACTERISTICS 0.50 VCE(sat) = 150°C IC/IB = 10 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) 0.2 0.15 25°C −55°C 0.1 0.05 0.40 0.35 0.30 0.25 0.20 VCE(sat) = 150°C 25°C 0.15 0.10 0.05 0 0 0.001 0.01 0.1 1.0 10 0.001 IC, COLLECTOR CURRENT (A) 1.0 10 1.1 150°C (5.0 V) IC/IB = 10 VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 0.1 Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 400 150°C (2.0 V) 300 250 25°C (5.0 V) 200 25°C (2.0 V) 150 −55°C (5.0 V) 100 −55°C (2.0 V) 0.001 0.01 0.1 1.0 −55°C 0.8 25°C 0.7 0.6 0.5 150°C 0.001 0.01 0.1 1.0 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain vs. Collector Current Figure 4. Base Emitter Saturation Voltage vs. Collector Current 10 VBE(on), BASE EMITTER TURN−ON VOLTAGE (V) 1.0 IC/IB = 100 −55°C 0.8 0.7 25°C 0.6 0.5 150°C 0.4 0.3 0.2 0.9 0.3 10 1.0 0.9 1.0 0.4 50 VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) 0.01 IC, COLLECTOR CURRENT (A) Figure 1. Collector Emitter Saturation Voltage vs. Collector Current 350 −55°C IC/IB = 100 0.45 VCE = −2.0 V 0.9 −55°C 0.8 0.7 25°C 0.6 0.5 150°C 0.4 0.3 0.2 0.001 0.01 0.1 1.0 10 0.001 0.01 0.1 1.0 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 5. Base Emitter Saturation Voltage vs. Collector Current Figure 6. Base Emitter Turn−On Voltage vs. Collector Current www.onsemi.com 3 10 NSS60200L TYPICAL CHARACTERISTICS 375 1.0 VCE, COLLECTOR−EMITTER VOLTAGE (V) 0.8 100 mA 0.6 0.4 300 mA 0.2 325 300 275 250 225 200 175 0 0.01 0.1 1.0 10 Cibo (pF) 350 Cibo, INPUT CAPACITANCE (pF) VCE (V) IC = 500 mA 10 mA 150 100 0 IB, BASE CURRENT (mA) 2.0 5.0 4.0 6.0 Figure 8. Input Capacitance 10 90 85 80 75 70 65 60 55 50 45 40 35 30 25 20 3.0 VEB, EMITTER BASE VOLTAGE (V) Figure 7. Saturation Region Cobo (pF) 100 ms 10 ms 1 ms 1s 1.0 IC (A) Cobo, OUTPUT CAPACITANCE (pF) 1.0 0.1 Thermal Limit 0.01 Single Pulse Test at Tamb = 25°C 0 5.0 10 15 20 25 30 0.001 0.1 35 1.0 10 VCB, COLLECTOR BASE VOLTAGE (V) VCE (Vdc) Figure 9. Output Capacitance Figure 10. Safe Operating Area www.onsemi.com 4 100 NSS60200L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 b 0.25 e q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10° STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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