APT41F100J 1000V, 42A, 0.20Ω Max, trr ≤400ns N-Channel FREDFET S S Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. D G SO 2 T- 27 "UL Recognized" file # E145592 ISOTOP ® D APT41F100J Single die FREDFET G S TYPICAL APPLICATIONS FEATURES • Fast switching with low EMI • ZVS phase shifted and other full bridge • Low trr for high reliability • Half bridge • Ultra low Crss for improved noise immunity • PFC and other boost converter • Low gate charge • Buck converter • Avalanche energy rated • Single and two switch forward • RoHS compliant • Flyback Absolute Maximum Ratings Symbol ID Parameter Unit Ratings Continuous Drain Current @ TC = 25°C 42 Continuous Drain Current @ TC = 100°C 27 A IDM Pulsed Drain Current VGS Gate-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 2 4075 mJ IAR Avalanche Current, Repetitive or Non-Repetitive 33 A 1 260 Thermal and Mechanical Characteristics Typ Max Unit W PD Total Power Dissipation @ TC = 25°C 960 RθJC Junction to Case Thermal Resistance 0.13 RθCS Case to Sink Thermal Resistance, Flat, Greased Surface TJ,TSTG Operating and Storage Junction Temperature Range VIsolation RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) WT Torque Package Weight Terminals and Mounting Screws. Microsemi Website - http://www.microsemi.com 0.15 -55 150 °C/W °C V 2500 1.03 oz 29.2 g 10 in·lbf 1.1 N·m Rev B 04-2009 Min Characteristic 050-8128 Symbol Static Characteristics TJ = 25°C unless otherwise specified Symbol Parameter Test Conditions Min VBR(DSS) Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA 1000 ∆VBR(DSS)/∆TJ Drain-Source On Resistance VGS(th) Gate-Source Threshold Voltage ∆VGS(th)/∆TJ VGS = 10V, ID = 33A 3 Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Dynamic Characteristics VDS = 1000V Forward Transconductance Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance Typ Max 1.15 0.18 4 -10 0.20 5 TJ = 25°C VGS = 0V 250 1000 ±100 TJ = 125°C VGS = ±30V Unit V V/°C Ω V mV/°C μA nA TJ = 25°C unless otherwise specified Parameter gfs 2.5 VGS = VDS, ID = 5mA Threshold Voltage Temperature Coefficient IDSS Symbol Reference to 25°C, ID = 250μA Breakdown Voltage Temperature Coefficient RDS(on) APT41F100J Min Test Conditions VDS = 50V, ID = 33A 4 Effective Output Capacitance, Charge Related Co(er) 5 Effective Output Capacitance, Energy Related Max 75 18500 245 1555 VGS = 0V, VDS = 25V f = 1MHz Co(cr) Typ Unit S pF 635 VGS = 0V, VDS = 0V to 667V 325 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time Resistive Switching Current Rise Time VDD = 667V, ID = 33A tr td(off) tf Turn-Off Delay Time 570 100 270 55 55 235 55 VGS = 0 to 10V, ID = 33A, VDS = 500V RG = 2.2Ω 6 , VGG = 15V Current Fall Time nC ns Source-Drain Diode Characteristics Symbol IS ISM VSD Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Irrm Reverse Recovery Current dv/dt Peak Recovery dv/dt Test Conditions Min Typ D MOSFET symbol showing the integral reverse p-n junction diode (body diode) A 260 S 1.0 400 800 TJ = 25°C TJ = 125°C TJ = 25°C VDD = 100V TJ = 125°C diSD/dt = 100A/μs TJ = 25°C Unit 42 G ISD = 33A, TJ = 25°C, VGS = 0V ISD = 33A 3 Max TJ = 125°C ISD ≤ 33A, di/dt ≤1000A/μs, VDD = 667V, TJ = 125°C 3.3 8.0 17.2 24.6 V ns μC A 25 V/ns 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25°C, L = 7.48mH, RG = 25Ω, IAS = 33A. 050-8128 Rev B 04-2009 3 Pulse test: Pulse Width < 380μs, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -5.37E-7/VDS^2 + 9.48E-8/VDS + 1.83E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. APT41F100J 180 V GS 60 = 10V T = 125°C J GS 140 120 100 80 TJ = 25°C 60 40 40 30 5V 20 10 TJ = 125°C 20 TJ = 150°C 0 0 5 10 15 20 25 30 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) 4.5V 0 Figure 2, Output Characteristics 250 NORMALIZED TO VDS> ID(ON) x RDS(ON) MAX. 250μSEC. PULSE TEST @ <0.5 % DUTY CYCLE VGS = 10V @ 33A 2.5 ID, DRAIN CURRENT (A) 200 2.0 1.5 1.0 0.5 150 30,000 80 10,000 TJ = -55°C 60 TJ = 25°C 50 TJ = 125°C 40 30 20 TJ = 25°C TJ = 125°C 50 90 70 TJ = -55°C 100 0 0 -55 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 3, RDS(ON) vs Junction Temperature C, CAPACITANCE (pF) 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics Ciss 1000 Coss 100 Crss 10 0 VGS, GATE-TO-SOURCE VOLTAGE (V) 16 10 20 30 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current 200 400 600 800 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 12 VDS = 200V 10 VDS = 500V 8 6 VDS = 800V 4 2 0 0 250 ID = 33A 14 0 10 40 100 200 300 400 500 600 700 800 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage ISD, REVERSE DRAIN CURRENT (A) 0 200 150 TJ = 25°C 100 TJ = 150°C 50 0 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage Rev B 04-2009 gfs, TRANSCONDUCTANCE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE Figure 1, Output Characteristics 3.0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 050-8128 0 = 6, 7, 8 & 9V V 50 TJ = -55°C ID, DRIAN CURRENT (A) ID, DRAIN CURRENT (A) 160 APT41F100J 300 300 100 IDM ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 100 10 13μs 100μs 1ms Rds(on) 1 10ms 100ms IDM 13μs 10 100μs 1ms Rds(on) TJ = 150°C TC = 25°C 1 Scaling for Different Case & Junction Temperatures: ID = ID(T = 25°C)*(TJ - TC)/125 DC line 0.1 1 0.1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area 10ms 100ms DC line C 1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area D = 0.9 0.12 0.10 0.7 0.08 0.5 0.06 Note: PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.14 0.3 0.04 t1 t2 0.02 0 t1 = Pulse Duration t 0.1 0.05 10-5 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC SINGLE PULSE 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration 1.0 SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 04-2009 14.9 (.587) 15.1 (.594) Rev B 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 050-8128 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) 1.95 (.077) 2.14 (.084) * Source 30.1 (1.185) 30.3 (1.193) Drain * Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) * Source Gate Dimensions in Millimeters and (Inches) Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.