TI LMV772-Q1 Single/dual/quad, low offset, low noise, rro operational amplifier Datasheet

LMV771, LMV772, LMV774
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SNOSA04F – MAY 2004 – REVISED SEPTEMBER 2010
LMV771/LMV772/LMV772Q/LMV774 Single/Dual/Quad, Low Offset, Low Noise, RRO
Operational Amplifiers
Check for Samples: LMV771, LMV772, LMV774
FEATURES
1
•
23
•
•
•
•
•
•
•
•
•
•
•
•
(Unless otherwise noted, typical values at VS =
2.7V)
Guaranteed 2.7V and 5V specifications
Maximum VOS (LMV771) 850μV (limit)
Voltage noise
f = 100 Hz 12.5nV/√Hz
f = 10 kHz 7.5nV/√Hz
Rail-to-Rail output swing
RL = 600Ω 100mV from rail
RL = 2kΩ 50mV from rail
Open loop gain with RL = 2kΩ 100dB
VCM 0 to V+ −0.9V
Supply current (per amplifier) 550µA
Gain bandwidth product 3.5MHz
•
•
Temperature range −40°C to 125°C
LMV772Q is AEC-Q100 Grade 1 qualified and
is manufactured on Automotive grade flow
APPLICATIONS
•
•
•
•
•
•
•
•
Transducer amplifier
Instrumentation amplifier
Precision current sensing
Data acquisition systems
Active filters and buffers
Sample and hold
Portable/battery powered electronics
Automotive
DESCRIPTION
The LMV771/LMV772/LMV772Q/LMV774 are Single, Dual, and Quad low noise precision operational amplifiers
intended for use in a wide range of applications. Other important characteristics of the family include: an
extended operating temperature range of −40°C to 125°C, the tiny SC70-5 package for the LMV771, and low
input bias current.
The extended temperature range of −40°C to 125°C allows the LMV771/LMV772/LMV772Q/LMV774 to
accommodate a broad range of applications. The LMV771 expands National Semiconductor’s Silicon Dust™
amplifier
portfolio
offering
enhancements
in
size,
speed,
and
power
savings.
The
LMV771/LMV772/LMV772Q/LMV774 are guaranteed to operate over the voltage range of 2.7V to 5.0V and all
have rail-to-rail output.
The LMV771/LMV772/LMV772Q/LMV774 family is designed for precision, low noise, low voltage, and miniature
systems. These amplifiers provide rail-to-rail output swing into heavy loads. The maximum input offset voltage for
the LMV771 is 850 μV at room temperature and the input common mode voltage range includes ground.
The LMV771 is offered in the tiny SC70-5 package, LMV772/LMV772Q in the space saving MSOP-8 and SOIC8, and the LMV774 in TSSOP-14.
1
2
3
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Silicon Dust is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2004–2010, Texas Instruments Incorporated
LMV771, LMV772, LMV774
SNOSA04F – MAY 2004 – REVISED SEPTEMBER 2010
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Connection Diagram
1
5
+IN
V
+
+
2
GND
-
-IN
4
3
VOUT
Figure 1. SC70-5 (Top View)
Instrumentation Amplifier
V1
+
V01
-
R2
KR2
R1
R1
R11 = a
+
R1
V2
+
VOUT
V02
R2
KR2
VO = -K (2a + 1) (V1 - V2)
(1)
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
2
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SNOSA04F – MAY 2004 – REVISED SEPTEMBER 2010
Absolute Maximum Ratings
ESD Tolerance
(1)
(2)
Machine Model
200V
Human Body Model
2000V
Differential Input Voltage
± Supply Voltage
+
Voltage at Input Pins
(V ) + 0.3V, (V–) – 0.3V
Current at Input Pins
±10 mA
Supply Voltage (V+–V −)
5.75V
+
(3)
−
(4)
Output Short Circuit to V
Output Short Circuit to V
Mounting Temperture
Infrared or Convection (20 sec)
235°C
Wave Soldering Lead Temp (10 sec)
260°C
−65°C to 150°C
Storage Temperature Range
Junction Temperature
(1)
(2)
(3)
(4)
(5)
(5)
150°C
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test
conditions, see the Electrical Characteristics.
Human Body Model is 1.5 kΩ in series with 100 pF. Machine Model is 0Ω in series with 20 pF.
Shorting output to V+ will adversely affect reliability.
Shorting output to V− will adversely affect reliability.
The maximum power dissipation is a function of TJ(MAX) , θJA, and TA. The maximum allowable power dissipation at any ambient
temperature is PD = (TJ(MAX)–T A) / θJA. All numbers apply for packages soldered directly into a PC board.
Operating Ratings
(1)
Supply Voltage
2.7V to 5.5V
−40°C to 125°C
Temperature Range
Thermal Resistance (θJA)
(1)
SC70-5 Package
440 °C/W
8-Pin MSOP
235°C/W
8-Pin SOIC
190°C/W
14-Pin TSSOP
155°C/W
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test
conditions, see the Electrical Characteristics.
Copyright © 2004–2010, Texas Instruments Incorporated
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SNOSA04F – MAY 2004 – REVISED SEPTEMBER 2010
2.7V DC Electrical Characteristics
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(1)
Unless otherwise specified, all limits are guaranteed for TA = 25°C. V+ = 2.7V, V − = 0V, VCM = V+/2, VO = V+/2 and RL > 1MΩ.
Boldface limits apply at the temperature extremes.
Symbol
Parameter
Condition
Min
(2)
LMV771
VOS
Input Offset Voltage
LMV772/LMV772Q/LMV774
TCVOS
Max
0.3
0.85
1.0
0.3
1.0
1.2
(3)
0.004
100
pA
550
900
910
µA
Input Offset Current
IS
Supply Current (Per Amplifier)
CMRR
Common Mode Rejection Ratio
0.5 ≤ VCM ≤ 1.2V
74
72
80
PSSR
Power Supply Rejection Ratio
2.7V ≤ V+ ≤ 5V
82
76
90
VCM
Input Common-Mode Voltage Range For CMRR ≥ 50dB
VO
IO
(1)
(2)
(3)
(4)
(5)
(6)
(7)
4
(5)
Output Swing
Output Short Circuit Current
µV/°C
pA
IOS
(4)
mV
100
250
Input Bias Current
AV
VCM = 1V
Units
−0.1
IB
Large Signal Voltage Gain
(2)
−0.45
Input Offset Voltage Average Drift
(4)
Typ
0
dB
dB
1.8
RL = 600Ω to 1.35V,
VO = 0.2V to 2.5V, (6)
92
80
100
RL = 2kΩ to 1.35V,
VO = 0.2V to 2.5V, (7)
98
86
100
RL = 600Ω to 1.35V
VIN = ± 100mV, (6)
0.11
0.14
0.084 to
2.62
2.59
2.56
RL = 2kΩ to 1.35V
VIN = ± 100mV, (7)
0.05
0.06
0.026 to
2.68
2.65
2.64
Sourcing, VO = 0V
VIN = 100mV
18
11
24
Sinking, VO = 2.7V
VIN = −100mV
18
11
22
V
dB
V
mA
Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ = TA.
All limits are guaranteed by testing or statistical analysis.
Typical values represent the most likely parametric norm.
Limits guaranteed by design.
RL is connected to mid-supply. The output voltage is set at 200mV from the rails. VO = GND + 0.2V and VO = V+ −0.2V
For LMV772/LMV772Q/LMV774, temperature limits apply to −40°C to 85°C.
For LMV772/LMV772Q/LMV774, temperature limits apply to −40°C to 85°C. If RL is relaxed to 10 kΩ, then for
LMV772/LMV772Q/LMV774 temperature limits apply to −40°C to 125°C.
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LMV771, LMV772, LMV774
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SNOSA04F – MAY 2004 – REVISED SEPTEMBER 2010
2.7V AC Electrical Characteristics
(1)
Unless otherwise specified, all limits are guaranteed for TA = 25°C. V+ = 5.0V, V − = 0V, VCM = V+/2, VO = V+/2 and RL > 1MΩ.
Boldface limits apply at the temperature extremes.
Symbol
Parameter
(4)
SR
Slew Rate
GBW
Gain-Bandwidth Product
Φm
Gm
en
Input-Referred Voltage Noise
(Flatband)
en
in
THD
(1)
(2)
(3)
(4)
Conditions
Min
(2)
AV = +1, RL = 10 kΩ
Typ
(3)
Max
(2)
Units
1.4
V/µs
3.5
MHz
Phase Margin
79
Deg
Gain Margin
−15
dB
f = 10kHz
7.5
nV/√Hz
Input-Referred Voltage Noise (l/f)
f = 100Hz
12.5
nV/√Hz
Input-Referred Current Noise
f = 1kHz
0.001
pA/√Hz
Total Harmonic Distortion
f = 1kHz, AV = +1
RL = 600Ω, VIN = 1 VPP
0.007
%
Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ = TA.
All limits are guaranteed by testing or statistical analysis.
Typical values represent the most likely parametric norm.
The number specified is the slower of positive and negative slew rates.
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Product Folder Links: LMV771 LMV772 LMV774
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5.0V DC Electrical Characteristics
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(1)
Unless otherwise specified, all limits are guaranteed for TA = 25°C. V+ = 5.0V, V − = 0V, VCM = V+/2, VO = V+/2 and RL > 1MΩ.
Boldface limits apply at the temperature extremes.
Symbol
Parameter
Condition
Min
(2)
LMV771
VOS
Input Offset Voltage
LMV772/LMV772Q/LMV774
TCVOS
Max
0.25
0.85
1.0
0.25
1.0
1.2
(3)
0.017
100
pA
600
950
960
µA
Input Offset Current
IS
Supply Current (Per Amplifier)
CMRR
Common Mode Rejection Ratio
0.5 ≤ VCM ≤ 3.5V
80
79
90
PSRR
Power Supply Rejection Ratio
2.7V ≤ V+ ≤ 5V
82
76
90
VCM
Input Common-Mode Voltage Range For CMRR ≥ 50dB
VO
IO
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
6
(5)
Output Swing
Output Short Circuit Current
(4) (8)
µV/°C
pA
IOS
(4)
0
dB
dB
4.1
RL = 600Ω to 2.5V,
VO = 0.2V to 4.8V, (6)
92
89
100
RL = 2kΩ to 2.5V,
VO = 0.2V to 4.8V,
98
95
100
RL = 600Ω to 2.5V
VIN = ± 100mV, (6)
0.15
0.23
0.112 to
4.9
4.85
4.77
RL = 2kΩ to 2.5V
VIN = ± 100mV, (7)
0.06
0.07
0.035 to
4.97
4.94
4.93
Sourcing, VO = 0V
VIN = 100mV
35
35
75
Sinking, VO = 2.7V
VIN = −100mV
35
35
66
(7)
mV
100
250
Input Bias Current
AV
VCM = 1V
Units
−0.23
IB
Large Signal Voltage Gain
(2)
−0.35
Input Offset Voltage Average Drift
(4)
Typ
V
dB
V
mA
Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ = TA.
All limits are guaranteed by testing or statistical analysis.
Typical values represent the most likely parametric norm.
Limits guaranteed by design.
RL is connected to mid-supply. The output voltage is set at 200mV from the rails. VO = GND + 0.2V and VO = V+ −0.2V
For LMV772/LMV772Q/LMV774, temperature limits apply to −40°C to 85°C.
For LMV772/LMV772Q/LMV774, temperature limits apply to −40°C to 85°C. If RL is relaxed to 10 kΩ, then for
LMV772/LMV772Q/LMV774 temperature limits apply to −40°C to 125°C.
Continuous operation of the device with an output short circuit current larger than 35mA may cause permanent damage to the device.
Submit Documentation Feedback
Copyright © 2004–2010, Texas Instruments Incorporated
Product Folder Links: LMV771 LMV772 LMV774
LMV771, LMV772, LMV774
www.ti.com
SNOSA04F – MAY 2004 – REVISED SEPTEMBER 2010
5.0V AC Electrical Characteristics
(1)
Unless otherwise specified, all limits are guaranteed for TA = 25°C. V+ = 5.0V, V − = 0V, VCM = V+/2, VO = V+/2 and RL > 1MΩ.
Boldface limits apply at the temperature extremes.
Symbol
Parameter
(4)
SR
Slew Rate
GBW
Gain-Bandwidth Product
Φm
Gm
en
Input-Referred Voltage Noise
(Flatband)
en
in
THD
(1)
(2)
(3)
(4)
Conditions
Min
(2)
AV = +1, RL = 10 kΩ
Typ
(3)
Max
(2)
Units
1.4
V/µs
3.5
MHz
Phase Margin
79
Deg
Gain Margin
−15
dB
f = 10kHz
6.5
nV/√Hz
Input-Referred Voltage Noise (l/f)
f = 100Hz
12
nV/√Hz
Input-Referred Current Noise
f = 1kHz
0.001
pA/√Hz
Total Harmonic Distortion
f = 1kHz, AV = +1
RL = 600Ω, VIN = 1 VPP
0.007
%
Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ = TA.
All limits are guaranteed by testing or statistical analysis.
Typical values represent the most likely parametric norm.
The number specified is the slower of positive and negative slew rates.
Connection Diagrams
1
5
+IN
V
2
+
+
GND
-
-IN
3
4
VOUT
Figure 2. SC70-5
(Top View)
Figure 3. 8-Pin MSOP/SOIC
(Top View)
Copyright © 2004–2010, Texas Instruments Incorporated
Product Folder Links: LMV771 LMV772 LMV774
Figure 4. 14-Pin TSSOP
(Top View)
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Typical Performance Characteristics
VOS
vs.
VCM Over Temperature
VOS
vs.
VCM Over Temperature
4
3
VS = 2.7V
-40°C
2.5
-40°C
25°C
25°C
3
85°C
2
2.5
85°C
125°C
1.5
VOS (mV)
VOS (mV)
VS = 5V
3.5
125°C
1
0.5
2
1.5
1
0.5
0
0
-0.5
-1
-0.5
-0.5
0
0.5
1.5
1
2
-1
-0.5 0 0.5 1 1.5 2 2.5 3 3.5 4
2.5
VCM (V)
VCM (V)
Output Swing
vs.
VS
Output Swing
vs.
VS
4.5 5
40
120
RL = 2k:
NEGATIVE SWING
VOUT FROM VSUPPLY (mV)
VOUT FROM VSUPPLY (mV)
110
100
90
80
POSITIVE SWING
70
60
50
40
2.5
RL = 600:
TA = 25°C
35
NEGATIVE SWING
30
POSITIVE SWING
25
TA = 25°C
3
3.5
4.5
4
5
20
2.5
5.5
3
3.5
Output Swing
vs.
VS
4.5
5
5.5
IS
vs.
VS Over Temperature
1
0.9
4
VS (V)
VS (V)
0.7
-40°C
NEGATIVE SWING
0.6
0.7
0.6
POSITIVE SWING
0.5
0.4
0.3
0.2
0.1
0
2.5
8
SUPPLY CURRENT (mA)
-
VOUT FROM V (mV)
0.8
RL = 100k:
3.5
25°C
0.4
85°C
125°C
0.3
0.2
0.1
TA = 25°C
3
0.5
4
4.5
VS (V)
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5
5.5
0
2.5
3
3.5
4
4.5
5
5.5
SUPPLY VOLTAGE (V)
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Typical Performance Characteristics (continued)
VIN
vs.
VOUT
VIN
vs.
VOUT
500
500
VS = ±1.35V
400
200
RL = 2k:
100
0
RL = 600:
-100
-200
RL = 2k:
100
0
RL = 600:
-100
-200
-300
-400
-400
-500
-1
0.5
0
0.5
1
1.5
-3
-2
-1
0
1
2
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
Sourcing Current
vs.
VOUT (1)
Sourcing Current
vs.
VOUT (1)
3
0
0
VS = 2.7V
-5
-10
VS = 5V
-20
-15
ISOURCE (mA)
-10
ISOURCE (mA)
200
-300
-500
-1.5
TA = 25°C
300
INPUT VOLTAGE (PV)
INPUT VOLTAGE (PV)
300
VS = ±2.5V
400
TA = 25°C
125°C
-20
85°C
-25
-30
-30
-50
25°C
85°C
-60
-70
-35
125°C
-40
25°C
-80
-40
-40°C
-90
-40°C
-100
-45
0
1
0.5
1.5
2
2.5
3
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
-
-
VOUT FROM V (V)
VOUT FROM V (V)
Sinking Current
vs.
VOUT (2)
Sinking Current
vs.
VOUT (2)
100
40
VS = 2.7V
-40°C
-40°C
90
80
25°C
25°C
70
ISINK (mA)
ISINK (mA)
30
85°C
20
60
50
125°C
40
85°C
125°C
30
10
20
10
VS = 5V
0
0
0
0.5
1
1.5
2
2.5
3
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
+
VOUT REFERENCED TO V (V)
(1)
(2)
VOUT FROM V
+
Continuous operation of the device with an output short circuit current larger than 35mA may cause permanent damage to the device.
Continuous operation of the device with an output short circuit current larger than 35mA may cause permanent damage to the device.
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Product Folder Links: LMV771 LMV772 LMV774
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Typical Performance Characteristics (continued)
Input Voltage Noise
vs.
Frequency
Input Bias Current Over Temperature
INPUT VOLTAGE NOISE (nV/ Hz)
35
30
25
20
15
VS = 2.7V
10
VS = 5V
5
0
10
100
1k
10k
FREQUENCY (Hz)
Input Bias Current Over Temperature
Input Bias Current Over Temperature
500
50
T = 25°C
300
200
100
VS = 2.7V
0
-100
VS = 5V
-200
-300
T = -40°C
40
INPUT BIAS CURRENT (fA)
INPUT BIAS CURRENT (fA)
400
30
20
VS = 2.7V
10
0
-10
-20
VS = 5V
-30
-400
-40
-500
-0.5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
-50
-0.5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
VCM (V)
VCM (V)
THD+N
vs.
Frequency
THD+N
vs.
VOUT
10
1
RL = 600:
THD+N (%)
VS = 5V, VO = 2.5VPP
VS = 2.7V, VO = 1VPP
0.1
AV = +1
THD+N (%)
AV = +10
1
AV = +10
0.1
VS = 2.7V
0.01
0.01
AV = +1
VS = 5V, VO = 1VPP
VS = 5V
VS = 2.7V, VO = 1VPP
0.001
10
100
1k
10k
100k
0.001
0.1
FREQUENCY (Hz)
10
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1
10
VOUT (VPP)
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Typical Performance Characteristics (continued)
Slew Rate
vs.
Supply Voltage
Open Loop Frequency Response Over Temperature
2
RL = 10k:
90
80
60
VIN = 2VPP
25°C
1.7
70
50
1.6
RISING EDGE
1.5
1.4
125°C
GAIN
40
60
50
30
-40°C
40
20
125°C
FALLING EDGE
1.2
0
1.1
-10
3.5
4
4.5
20
VS = 5V
25°C
RL = 2k:
-20
1k
10k
5
SUPPLY VOLTAGE (V)
60
RL = 100k:
GAIN (dB)
50
GAIN
40
100
80
90
70
80
60
70
50
50
30
RL = 100k:
RL = 600:
10
0
RL = 2k:
-10
VS = 2.7V
-20
1k
10k
100k
1M
40
GAIN
40
50
RL = 600:
20
0
10
-10
0
-20
1k
GAIN
80
90
70
80
60
70
50
60
30
50
20
40
-10
CL = 1000pF
CL = 500pF
CL = 0pF
VS = 5V
RL = 600:
-20
1k
10k
CL = 100pF
100k
0
10k
100k
1M
10M
1M
100
90
70
CL = 100pF
GAIN
40
60
50
30
40
20
CL = 1000pF
10
20
0
10
-10
0
-20
1k
10M
CL = 0pF
80
30
CL = 500pF
VS = 5V
20
CL = 0pF
RL = 100k:
FREQUENCY (Hz)
CL = 100pF
10
0
10k
100k
1M
10M
FREQUENCY (Hz)
Non-Inverting Large Signal Pulse Response
TA = -40°C
RL = 2k:
OUTPUT SIGNAL
VS = ±2.5V
TA = -40°C
RL = 2k:
(1 V/div)
INPUT SIGNAL
VS = ±2.5V
(50 mV/div)
INPUT SIGNAL
10
VS = 5V
30
Non-Inverting Small Signal Pulse Response
OUTPUT SIGNAL
20
PHASE
GAIN (dB)
GAIN (dB)
CL = 100pF
0
30
RL = 2k:
Open Loop Gain & Phase with Cap. Loading
100
PHASE (°)
CL = 0pF
60
10
40
FREQUENCY (Hz)
80
50
60
RL = 100k:
20
FREQUENCY (Hz)
PHASE
90
70
RL = 2k:
30
10
10M
100
80
RL = 600:
30
Open Loop Gain & Phase with Cap. Loading
70
0
10M
RL = 100k:
PHASE
60
RL = 2k:
20
1M
Open Loop Frequency Response
GAIN (dB)
RL = 600:
PHASE
PHASE (°)
80
100k
FREQUENCY (Hz)
Open Loop Frequency Response
70
10
PHASE (°)
3
30
10
PHASE (°)
1.3
1
2.5
40
-40°C
PHASE
70
GAIN (dB)
SLEW RATE (V/Ps)
1.8
100
80
AV = +1
PHASE (°)
1.9
TIME (10 Ps/div)
TIME (10 Ps/div)
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Typical Performance Characteristics (continued)
INPUT SIGNAL
Non-Inverting Large Signal Pulse Response
TA = 25°C
RL = 2k:
OUTPUT SIGNAL
VS = ±2.5V
TA = 25°C
RL = 2k:
(1 V/div)
VS = ±2.5V
(50 mV/div)
OUTPUT SIGNAL
INPUT SIGNAL
Non-Inverting Small Signal Pulse Response
VS = ±2.5V
TA = 125°C
RL = 2k:
(50 mV/div)
OUTPUT SIGNAL
INPUT SIGNAL
OUTPUT SIGNAL
(1 V/div)
TIME (10 Ps/div)
Non-Inverting Large Signal Pulse Response
INPUT SIGNAL
TIME (10 Ps/div)
Non-Inverting Small Signal Pulse Response
TIME (10 Ps/div)
TA = -40°C
RL = 2k:
VS = ±2.5V
TA = -40°C
RL = 2k:
(1 V/div)
INPUT SIGNAL
Inverting Large Signal Pulse Response
OUTPUT SIGNAL
INPUT SIGNAL
VS = ±2.5V
(50 mV/div)
OUTPUT SIGNAL
RL = 2k:
TIME (10 Ps/div)
Inverting Small Signal Pulse Response
RL = 2k:
OUTPUT SIGNAL
VS = ±2.5V
TA = 25°C
RL = 2k:
(1 V/div)
TA = 25°C
(50 mV/div)
OUTPUT SIGNAL
VS = ±2.5V
INPUT SIGNAL
TIME (10 Ps/div)
Inverting Large Signal Pulse Response
INPUT SIGNAL
TIME (10 Ps/div)
Inverting Small Signal Pulse Response
TIME (10 Ps/div)
12
VS = ±2.5V
TA = 125°C
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TIME (10 Ps/div)
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SNOSA04F – MAY 2004 – REVISED SEPTEMBER 2010
Typical Performance Characteristics (continued)
INPUT SIGNAL
Inverting Large Signal Pulse Response
TA = 125°C
RL = 2k:
OUTPUT SIGNAL
VS = ±2.5V
TA = 125°C
RL = 2k:
(1 V/div)
VS = ±2.5V
(50 mV/div)
OUTPUT SIGNAL
INPUT SIGNAL
Inverting Small Signal Pulse Response
TIME (10 Ps/div)
TIME (10 Ps/div)
Stability
vs.
VCM
Stability
vs.
VCM
500
250
400
CAPACITIVE LOAD (pF)
CAPACITIVE LOAD (pF)
450
350
25% OVERSHOOT
300
250
200
VS = ±2.5V
150
AV = +1
100
RL = 2k:
50
25% OVERSHOOT
150
100
VS = ±2.5V
AV = +1
50
RL = 1M:
VO = 100mV
VO = 100mV
0
0
-2
-1.5
-1
-0.5
0
0.5
1
-2
1.5
-1.5
-1
-0.5
0
0.5
VCM (V)
VCM (V)
PSRR
vs.
Frequency
CMRR
vs.
Frequency
1
1.5
100
140
RL = 100k:
RL = 5 k:
90
120
80
VS = 2.7V, -PSRR
100
70
VS = 2.7V, +PSRR
80
CMRR (dB)
PSRR (dB)
200
VS = 5V, +PSRR
60
VS = 5V, -PSRR
50
40
30
40
VS = 5V
60
VS = 2.7V
20
20
10
0
100
1k
10k
100k
1M
0
100
1k
10k
100k
1M
FREQUENCY (Hz)
FREQUENCY (Hz)
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SNOSA04F – MAY 2004 – REVISED SEPTEMBER 2010
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Typical Performance Characteristics (continued)
Crosstalk Rejection
vs.
Frequency (LMV772/LMV772Q/LMV774)
140
VS = 5V
CROSSTALK REJECTION (dB)
120
100
VS = 2.7V
80
60
40
20
0
100
1k
10k
100k
600k
FREQUENCY (Hz)
Application Note
LMV771/LMV772/LMV772Q/LMV774
The LMV771/LMV772LMV772Q/LMV774 are a family of precision amplifiers with very low noise and ultra low
offset voltage. LMV771/LMV772/LMV772Q/LMV774's extended temperature range of −40°C to 125°C enables
the user to design this family of products into a variety of applications including automotive.
The LMV771 has a maximum offset voltage of 1mV over the extended temperature range. This makes the
LMV771 ideal for applications where precision is important.
The LMV772/LMV772Q/LMV774 have a maximum offset voltage of 1mV at room temperature and 1.2mV over
the extended temperature range of −40°C to 125°C. Care must be taken when the LMV772/LMV772Q/LMV774
are designed into applications with heavy loads under extreme temperature conditions. As indicated in the DC
tables, the LMV772/LMV772Q/LMV774's gain and output swing may be reduced at temperatures between 85°C
and 125°C with loads heavier than 2kΩ.
INSTRUMENTATION AMPLIFIER
Measurement of very small signals with an amplifier requires close attention to the input impedance of the
amplifier, gain of the overall signal on the inputs, and the gain on each input since we are only interested in the
difference of the two inputs and the common signal is considered noise. A classic solution is an instrumentation
amplifier. Instrumentation amplifiers have a finite, accurate, and stable gain. Also they have extremely high input
impedances and very low output impedances. Finally they have an extremely high CMRR so that the amplifier
can only respond to the differential signal. A typical instrumentation amplifier is shown in Figure 5.
V1
+
V01
-
R2
KR2
R1
R1
R11 = a
+
VOUT
R1
V2
+
V02
R2
KR2
Figure 5. Instrumentation Amplifier
14
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SNOSA04F – MAY 2004 – REVISED SEPTEMBER 2010
There are two stages in this amplifier. The last stage, output stage, is a differential amplifier. In an ideal case the
two amplifiers of the first stage, input stage, would be set up as buffers to isolate the inputs. However they
cannot be connected as followers because of real amplifier's mismatch. That is why there is a balancing resistor
between the two. The product of the two stages of gain will give the gain of the instrumentation amplifier. Ideally,
the CMRR should be infinite. However the output stage has a small non-zero common mode gain which results
from resistor mismatch.
In the input stage of the circuit, current is the same across all resistors. This is due to the high input impedance
and low input bias current of the LMV771. With the node equations we have:
GIVEN: I R = I R
11
1
(2)
By Ohm’s Law:
VO1 - VO2 = (2R1 + R11) IR
11
= (2a + 1) R11 x IR
11
= (2a + 1) V R
11
(3)
However:
VR
11 = V1 - V2
(4)
So we have:
(5)
Now looking at the output of the instrumentation amplifier:
KR2
VO =
R2
(VO2 - VO1)
= -K (VO1 - VO2)
(6)
Substituting from Equation 5:
VO = -K (2a + 1) (V1 - V2)
(7)
This shows the gain of the instrumentation amplifier to be:
−K(2a+1)
(8)
Typical values for this circuit can be obtained by setting: a = 12 and K= 4. This results in an overall gain of −100.
Figure 6 shows typical CMRR characteristics of this Instrumentation amplifier over frequency. Three LMV771
amplifiers are used along with 1% resistors to minimize resistor mismatch. Resistors used to build the circuit are:
R1 = 21.6kΩ, R11 = 1.8kΩ, R2 = 2.5kΩ with K = 40 and a = 12. This results in an overall gain of −1000, −K(2a+1)
= −1000.
0
VS = ±2.5V
-20
VCM = 0V
VIN = 3VPP
CMRR (dB)
-40
-60
-80
-100
-120
-140
10
100
1k
10k
FREQUENCY (Hz)
Figure 6. CMRR vs. Frequency
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SNOSA04F – MAY 2004 – REVISED SEPTEMBER 2010
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ACTIVE FILTER
Active filters are circuits with amplifiers, resistors, and capacitors. The use of amplifiers instead of inductors,
which are used in passive filters, enhances the circuit performance while reducing the size and complexity of the
filter.
The simplest active filters are designed using an inverting op amp configuration where at least one reactive
element has been added to the configuration. This means that the op amp will provide "frequency-dependent"
amplification, since reactive elements are frequency dependent devices.
LOW PASS FILTER
The following shows a very simple low pass filter.
C
R2
R1
Vi
VOUT
+
Figure 7. Lowpass Filter
The transfer function can be expressed as follows:
By KCL:
-Vi
VO
VO
-
R1
1
jwc
-
R2
=O
(9)
Simplifying this further results in:
-R2
1
R1
jwcR2 +1
VO =
Vi
(10)
or
VO
Vi
-R2
1
R1
jwcR2 +1
=
(11)
Now, substituting ω=2πf, so that the calculations are in f(Hz) and not ω(rad/s), and setting the DC gain HO =
−R2/R1 and H = VO/Vi
H = HO
1
j2SfcR2 +1
(12)
Set: fo = 1/(2πR1C)
H = HO
1
1 + j (f/fo)
(13)
Low pass filters are known as lossy integrators because they only behave as an integrator at higher frequencies.
Just by looking at the transfer function one can predict the general form of the bode plot. When the f/fO ratio is
small, the capacitor is in effect an open circuit and the amplifier behaves at a set DC gain. Starting at fO, −3dB
corner, the capacitor will have the dominant impedance and hence the circuit will behave as an integrator and
the signal will be attenuated and eventually cut. The bode plot for this filter is shown in the following picture:
16
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SNOSA04F – MAY 2004 – REVISED SEPTEMBER 2010
dB
|H|
|HO|
-20dB/dec
0
f = fo
f (Hz)
Figure 8. Lowpass Filter Transfer Function
HIGH PASS FILTER
In a similar approach, one can derive the transfer function of a high pass filter. A typical first order high pass filter
is shown below:
C
R1
R2
Vi
VOUT
+
Figure 9. Highpass FIlter
Writing the KCL for this circuit :
(V1 denotes the voltage between C and R1)
V1 - V
V1 - Vi
=
1
jwC
-
R1
(14)
-
-
V + VO
V + V1
=
R1
R2
(15)
Solving these two equations to find the transfer function and using:
fO =
1
2SR1C
(16)
VO
-R2
HO =
(high frequency gain)
R1
H=
and
Vi
Which results:
H = HO
j (f/fo)
1 + j (f/fo)
(17)
Looking at the transfer function, it is clear that when f/fO is small, the capacitor is open and hence no signal is
getting in to the amplifier. As the frequency increases the amplifier starts operating. At f = fO the capacitor
behaves like a short circuit and the amplifier will have a constant, high frequency, gain of HO. Figure 10 shows
the transfer function of this high pass filter:
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SNOSA04F – MAY 2004 – REVISED SEPTEMBER 2010
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dB
|H|
|HO|
-20dB/dec
0
f = fo
f (Hz)
Figure 10. Highpass Filter Transfer Function
BAND PASS FILTER
C2
C1
R2
R1
Vi
VOUT
+
Figure 11. Bandpass Filter
Combining a low pass filter and a high pass filter will generate a band pass filter. In this network the input
impedance forms the high pass filter while the feedback impedance forms the low pass filter. Choosing the
corner frequencies so that f1 < f2, then all the frequencies in between, f1 ≤ f ≤ f2, will pass through the filter while
frequencies below f1 and above f2 will be cut off.
The transfer function can be easily calculated using the same methodology as before.
H = HO
j (f/f1)
[1 + j (f/f1)] [1 + j (f/f2)]
(18)
Where
f1 =
1
2SR1C1
f2 =
1
2SR2C2
HO =
-R2
R1
(19)
The transfer function is presented in the following figure.
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|H
|
dB
|HO|
-20dB/dec
20dB/dec
0
f1
f (Hz)
f2
Figure 12. Bandpass filter Transfer Function
STATE VARIABLE ACTIVE FILTER
State variable active filters are circuits that can simultaneously represent high pass, band pass, and low pass
filters. The state variable active filter uses three separate amplifiers to achieve this task. A typical state variable
active filter is shown in Figure 13. The first amplifier in the circuit is connected as a gain stage. The second and
third amplifiers are connected as integrators, which means they behave as low pass filters. The feedback path
from the output of the third amplifier to the first amplifier enables this low frequency signal to be fed back with a
finite and fairly low closed loop gain. This is while the high frequency signal on the input is still gained up by the
open loop gain of the 1st amplifier. This makes the first amplifier a high pass filter. The high pass signal is then
fed into a low pass filter. The outcome is a band pass signal, meaning the second amplifier is a band pass filter.
This signal is then fed into the third amplifiers input and so, the third amplifier behaves as a simple low pass
filter.
R4
R1
C2
VIN
R2
-
A1
R5
C3
R3
VHP
+
-
A2
VBP
+
A3
+
VLP
R6
Figure 13. State Variable Active Filter
The transfer function of each filter needs to be calculated. The derivations will be more trivial if each stage of the
filter is shown on its own.
The three components are:
R4
R1
VO
R5
VIN
A1
+
VO1
R6
VO2
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C2
R2
VO1
A2
VO2
+
C3
R3
VO2
A3
V
O
+
For A1 the relationship between input and output is:
R6
R1 + R4
R5 + R6
R1
-R4
VO1 =
R1
V0 +
VIN +
R5
R1 + R4
R5 + R6
R1
VO2
(20)
This relationship depends on the output of all the filters. The input-output relationship for A2 can be expressed
as:
VO2 =
-1
VO1
s C 2R 2
(21)
And finally this relationship for A3 is as follows:
VO =
-1
VO2
s C 3R 3
(22)
Re-arranging these equations, one can find the relationship between VO and VIN (transfer function of the lowpass
filter), VO1 and VIN (transfer function of the highpass filter), and VO2 and VIN (transfer function of the bandpass
filter) These relationships are as follows:
Lowpass Filter
R 1 + R4
R1
VO
VIN
R6
1
R5 + R6 C2C3R2R3
=
1
R5
R1 + R4
C 2R 2
R5 + R6
R1
2
s +s
1
+
C2C3R2R3
(23)
Highpass Filter
s
VO1
VIN
2
R1 + R 4
R6
R1
R5 + R6
=
1
R5
R1 + R4
C 2R 2
R5 + R6
R1
2
s +s
1
+
C2C3R2R3
(24)
Bandpass Filter
1
R1 + R 4
R6
C 2R 2
R1
R5 + R6
s
VO2
VIN
=
2
s +s
1
R5
R1 + R4
C 2R 2
R5 + R6
R1
1
+
C2C3R2R3
(25)
The center frequency and Quality Factor for all of these filters is the same. The values can be calculated in the
following manner:
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SNOSA04F – MAY 2004 – REVISED SEPTEMBER 2010
1
Zc =
C 2 C 3R 2R 3
and
Q=
C 2R 2
R5 + R6
R1
C 3R 3
R6
R1 + R 4
(26)
A design example is shown here:
Designing a bandpass filter with center frequency of 10kHz and Quality Factor of 5.5
To do this, first consider the Quality Factor. It is best to pick convenient values for the capacitors. C2 = C3 =
1000pF. Also, choose R1 = R4 = 30kΩ. Now values of R5 and R6 need to be calculated. With the chosen values
for the capacitors and resistors, Q reduces to:
Q=
1
11
=
2
2
R5 + R6
R6
(27)
or
R5 = 10R6 R6 = 1.5kΩ R5 = 15kΩ
(28)
Also, for f = 10kHz, the center frequency is ωc = 2πf = 62.8kHz.
Using the expressions above, the appropriate resistor values will be R2 = R3 = 16kΩ.
The following graphs show the transfer function of each of the filters. The DC gain of this circuit is:
DC GAIN =
R1 + R4
R6
R1
R 5 + R6
= -14.8 dB
The frequency responses of each stage of the state variable active filter when implemented with the LMV774 are
shown in the following figures:
0
-10
-20
GAIN (dB)
-30
-40
-50
-60
-70
-80
-90
-100
100
1k
10k
100k
400k
FREQUENCY (Hz)
Figure 14. Lowpass Filter Frequency Response
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0
-10
-20
GAIN (dB)
-30
-40
-50
-60
-70
-80
-90
-100
100
1k
10k
100k
400k
FREQUENCY (Hz)
Figure 15. Bandpass Filter Frequency Response
0
-10
-20
GAIN (dB)
-30
-40
-50
-60
-70
-80
-90
-100
100
1k
10k
100k
400k
FREQUENCY (Hz)
Figure 16. Highpass Filter Frequency Response
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PACKAGE OPTION ADDENDUM
www.ti.com
1-Nov-2015
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
LMV771MG
NRND
SC70
DCK
5
1000
TBD
Call TI
Call TI
-40 to 125
A75
LMV771MG/NOPB
ACTIVE
SC70
DCK
5
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
A75
LMV771MGX/NOPB
ACTIVE
SC70
DCK
5
3000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
A75
LMV772MA/NOPB
ACTIVE
SOIC
D
8
95
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
LMV7
72MA
LMV772MAX
NRND
SOIC
D
8
TBD
Call TI
Call TI
-40 to 125
LMV7
72MA
LMV772MAX/NOPB
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
LMV7
72MA
LMV772MM
NRND
VSSOP
DGK
8
TBD
Call TI
Call TI
-40 to 125
A91A
LMV772MM/NOPB
ACTIVE
VSSOP
DGK
8
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
A91A
LMV772MMX/NOPB
ACTIVE
VSSOP
DGK
8
3500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
A91A
LMV772QMM/NOPB
ACTIVE
VSSOP
DGK
8
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
AJ7A
LMV772QMMX/NOPB
ACTIVE
VSSOP
DGK
8
3500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
AJ7A
LMV774MT/NOPB
ACTIVE
TSSOP
PW
14
94
Green (RoHS
& no Sb/Br)
CU NIPDAU | CU SN
Level-1-260C-UNLIM
-40 to 125
LMV77
4MT
LMV774MTX/NOPB
ACTIVE
TSSOP
PW
14
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU | CU SN
Level-1-260C-UNLIM
-40 to 125
LMV77
4MT
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
1-Nov-2015
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF LMV772, LMV772-Q1 :
• Catalog: LMV772
• Automotive: LMV772-Q1
NOTE: Qualified Version Definitions:
• Catalog - TI's standard catalog product
• Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
6-Nov-2015
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
LMV771MG
SC70
DCK
5
1000
178.0
8.4
2.25
2.45
1.2
4.0
8.0
Q3
LMV771MG/NOPB
SC70
DCK
5
1000
178.0
8.4
2.25
2.45
1.2
4.0
8.0
Q3
LMV771MGX/NOPB
SC70
DCK
5
3000
178.0
8.4
2.25
2.45
1.2
4.0
8.0
Q3
LMV772MAX/NOPB
SOIC
D
8
2500
330.0
12.4
6.5
5.4
2.0
8.0
12.0
Q1
LMV772MM/NOPB
VSSOP
DGK
8
1000
178.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
LMV772MMX/NOPB
VSSOP
DGK
8
3500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
LMV772QMM/NOPB
VSSOP
DGK
8
1000
178.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
LMV772QMMX/NOPB
VSSOP
DGK
8
3500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
LMV774MTX/NOPB
TSSOP
PW
14
2500
330.0
12.4
6.95
5.6
1.6
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
6-Nov-2015
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
LMV771MG
SC70
DCK
5
1000
210.0
185.0
35.0
LMV771MG/NOPB
SC70
DCK
5
1000
210.0
185.0
35.0
LMV771MGX/NOPB
SC70
DCK
5
3000
210.0
185.0
35.0
LMV772MAX/NOPB
SOIC
D
8
2500
367.0
367.0
35.0
LMV772MM/NOPB
VSSOP
DGK
8
1000
210.0
185.0
35.0
LMV772MMX/NOPB
VSSOP
DGK
8
3500
367.0
367.0
35.0
LMV772QMM/NOPB
VSSOP
DGK
8
1000
210.0
185.0
35.0
LMV772QMMX/NOPB
VSSOP
DGK
8
3500
367.0
367.0
35.0
LMV774MTX/NOPB
TSSOP
PW
14
2500
367.0
367.0
35.0
Pack Materials-Page 2
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