PD - 97483
AUIRF1324S
AUIRF1324L
AUTOMOTIVE GRADE
HEXFET® Power MOSFET
Features
l
l
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
D
G
S
VDSS
RDS(on) typ.
ID (Silicon Limited)
24V
1.3mΩ
340A
ID (Package Limited)
195A
c
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other
applications.
S
S
D
G
D2Pak
AUIRF1324S
TO-262
AUIRF1324L
G
D
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (T A) is 25°C, unless otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
Parameter
d
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
d
f
dv/dt
TJ
TSTG
Max.
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
e
d
Units
340
240
195
1420
300
2.0
± 20
270
See Fig. 14, 15, 22a, 22b
0.46
-55 to + 175
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300
Thermal Resistance
Symbol
RθJC
RθJA
Parameter
k
Junction-to-Case
Junction-to-Ambient (PCB Mounted, steady-state)
j
Typ.
Max.
Units
–––
–––
0.50
40
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
03/29/2010
AUIRF1324S/L
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
gfs
RG
IDSS
IGSS
Parameter
Min. Typ. Max. Units
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Internal Gate Resistance
Drain-to-Source Leakage Current
24
–––
–––
2.0
180
–––
–––
–––
–––
–––
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
22
1.3
–––
–––
2.3
–––
–––
–––
–––
Conditions
–––
V VGS = 0V, ID = 250µA
––– mV/°C Reference to 25°C, ID = 5.0mA
1.65 mΩ VGS = 10V, ID = 195A
4.0
V VDS = VGS, ID = 250µA
–––
S VDS = 10V, ID = 195A
–––
Ω
20
µA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
250
200
nA VGS = 20V
VGS = -20V
-200
d
g
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Parameter
Conditions
Min. Typ. Max. Units
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
–––
–––
–––
–––
Turn-On Delay Time
–––
Rise Time
–––
Turn-Off Delay Time
–––
Fall Time
–––
Input Capacitance
–––
Output Capacitance
–––
Reverse Transfer Capacitance
–––
Effective Output Capacitance (Energy Related) –––
Effective Output Capacitance (Time Related)
–––
160
84
49
76
17
190
83
120
7590
3440
1960
4700
4490
240
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
ID = 195A
VDS = 12V
VGS = 10V
ID = 195A, VDS =0V, VGS = 10V
VDD = 16V
ID = 195A
RG = 2.7Ω
VGS = 10V
VGS = 0V
VDS = 24V
ƒ = 1.0 MHz, See Fig. 5
VGS = 0V, VDS = 0V to 19V , See Fig. 11
VGS = 0V, VDS = 0V to 19V
g
ns
g
pF
i
h
Diode Characteristics
Symbol
IS
Parameter
VSD
trr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
ISM
d
c
A
1420
A
–––
––– 350
–––
–––
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 195A, VGS = 0V
VR = 20V,
TJ = 25°C
IF = 195A
TJ = 125°C
TJ = 25°C
di/dt = 100A/µs
TJ = 125°C
TJ = 25°C
D
S
g
––– –––
1.3
V
–––
46
–––
ns
–––
71
–––
––– 160 –––
nC
––– 430 –––
–––
7.7
–––
A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 195A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140).
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.014mH
RG = 25Ω, IAS = 195A, VGS =10V. Part not recommended for use
above this value.
2
Conditions
Min. Typ. Max. Units
g
ISD ≤ 195A, di/dt ≤ 450A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom-
mended footprint and soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
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AUIRF1324S/L
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
D2Pak
MSL1
TO-262
Machine Model
††
N/A
Class M4
AEC-Q101-002
ESD
Human Body Model
Class H3A
AEC-Q101-001
Charged Device Model
Class C5
AEC-Q101-005
RoHS Compliant
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
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3
AUIRF1324S/L
10000
≤60µs PULSE WIDTH
Tj = 25°C
1000
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.5V
4.0V
TOP
100
BOTTOM
≤60µs PULSE WIDTH
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.5V
4.0V
TOP
Tj = 175°C
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
10000
1000
10
BOTTOM
100
1
4.0V
4.0V
0.1
0.1
1
10
10
100
0.1
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
100
2.0
100
T J = 175°C
T J = 25°C
10
1
VDS = 15V
≤60µs PULSE WIDTH
0.1
ID = 195A
VGS = 10V
1.5
1.0
0.5
2
3
4
5
6
7
8
9
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
14.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
VGS, Gate-to-Source Voltage (V)
ID= 195A
C oss = C ds + C gd
C, Capacitance (pF)
10
Fig 2. Typical Output Characteristics
1000
Ciss
Coss
10000
Crss
12.0
VDS= 19V
VDS= 12V
10.0
8.0
6.0
4.0
2.0
0.0
1000
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
4
1
V DS, Drain-to-Source Voltage (V)
0
50
100
150
200
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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AUIRF1324S/L
10000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
T J = 175°C
100
T J = 25°C
10
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
100µsec
1msec
100
Limited by
package
10msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
1.0
0.0
0.5
1.0
1.5
1
VSD, Source-to-Drain Voltage (V)
250
200
150
100
50
0
50
75
100
125
150
175
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
ID, Drain Current (A)
Limited By Package
25
100
Fig 8. Maximum Safe Operating Area
350
300
10
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
32
Id = 5mA
30
28
26
24
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
T C , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Drain-to-Source Breakdown Voltage
2.0
EAS , Single Pulse Avalanche Energy (mJ)
1200
1.8
ID
44A
83A
BOTTOM 195A
TOP
1000
1.6
1.4
Energy (µJ)
DC
1
1.2
1.0
0.8
0.6
0.4
0.2
0.0
800
600
400
200
0
-5
0
5
10
15
20
25
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
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30
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
5
AUIRF1324S/L
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.20
0.1
0.10
0.05
τJ
0.02
0.01
0.01
R1
R1
τJ
τ1
R2
R2
R3
R3
τC
τ
τ1
τ2
τ2
τ3
τ3
τ4
τ4
Ci= τi/Ri
Ci i/Ri
1E-005
0.0125
0.000008
0.0822
0.000078
0.2019
0.001110
0.2036
0.007197
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
τi (sec)
Ri (°C/W)
R4
R4
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
Duty Cycle = Single Pulse
0.01
100
0.05
0.10
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
6
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AUIRF1324S/L
EAR , Avalanche Energy (mJ)
300
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 195A
250
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
200
150
100
50
0
25
50
75
100
125
150
175
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Starting T J , Junction Temperature (°C)
Fig 15. Maximum Avalanche Energy vs. Temperature
VGS(th) , Gate threshold Voltage (V)
4.5
4.0
3.5
3.0
2.5
2.0
ID = 250µA
ID = 1.0mA
ID = 1.0A
1.5
1.0
-75 -50 -25 0
25 50 75 100 125 150 175 200
T J , Temperature ( °C )
Fig 16. Threshold Voltage vs. Temperature
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7
AUIRF1324S/L
Driver Gate Drive
D.U.T
-
-
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D=
Period
P.W.
+
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor
Current
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V(BR)DSS
15V
DRIVER
L
VDS
tp
D.U.T
RG
VGS
20V
+
V
- DD
IAS
A
0.01Ω
tp
I AS
Fig 22a. Unclamped Inductive Test Circuit
RD
VDS
Fig 22b. Unclamped Inductive Waveforms
VDS
90%
VGS
D.U.T.
RG
+
- VDD
V10V
GS
10%
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
td(on)
Fig 23a. Switching Time Test Circuit
tr
t d(off)
Fig 23b. Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50KΩ
12V
tf
.2µF
.3µF
D.U.T.
+
V
- DS
Vgs(th)
VGS
3mA
IG
ID
Current Sampling Resistors
8
Fig 24a. Gate Charge Test Circuit
Qgs1 Qgs2
Qgd
Qgodr
Fig 24b. Gate Charge Waveform
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AUIRF1324S/L
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak (TO-263AB) Part Marking Information
Part Number
AUIRF1324S
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
AUIRF1324S/L
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
Part Number
AUIRF1324L
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRF1324S/L
D2Pak (TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
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60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
11
AUIRF1324S/L
Ordering Information
Base part
Package Type
AUIRF1324S
D2Pak
AUIRF1324L
TO-262
12
Standard Pack
Form
Tube
Tape and Reel Left
Tape and Reel Right
Tube
Complete Part Number
Quantity
50
800
800
50
AUIRF1324S
AUIRF1324STRL
AUIRF1324STRR
AUIRF1324L
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AUIRF1324S/L
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right
to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to
discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or
customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to
IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard
warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where
mandated by government requirements, testing of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and
applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate
design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied
by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and
deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject
to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids
all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is
not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or
in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a
situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized
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harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim
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specifically designated by IR as military-grade or “enhanced plastic.” Only products designated by IR as military-grade meet military
specifications. Buyers acknowledge and agree that any such use of IR products which IR has not designated as military-grade is solely
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use.
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designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers
acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure
to meet such requirements.
For technical support, please contact IR’s Technical
Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
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13