GP1S563/GP1S566 GP1S563/GP1S566 Long Case, Snap-in Mounting Type Photointerrupter ■ Features ■ Outline Dimensions 1.5 8 0. C +0 1.8−0.1 (1.15) Center of sensor 3.4 1.6 1.2 (4) 0.25 1.6+0.1 −0 (2.8) +0.3 0.25−0.1 φ1 Internal connection diagram 1 3 1 4 3.5±0.1 2 1 0.5 4 2 3 Anode Cathode 1 2 Collector Emitter 3 4 1.5 5 1.5 2−0.5 GP1S566 R0.6 .8 *1 The derating factors of absolute maximum ratings due to ambient temperature are shown in Fig.1 to 3 *2 Pulse width<=100µs, Duty ratio : 0.01 *3 For 5s 1.2 21.9±0.25 G P1 S5 6 6 (1.15) Center of sensor 1.8 (Slit height) 4.2 3.5 8 7 3 1.6 +0.3 0.25−0.1 0.25 1.6+0.1 −0 3.4 3±0.5 2.2 (4) 2−(4) (2.8) +0 1.8−0.1 +0.3 0.45−0.1 (2.54) .1 3.4±0.1 φ1 1 2 3 1 4 1 0.5 Internal connection diagram 3.5±0.1 0.5 +0.2 0.8−0.1 0.4 + −0 0 .1 (5.45) ❈ Unspecified tolerance : ±0.2mm ❈ ( ) : Reference dimensions Notice +0.2 0.8−0.1 0.4 − 0 0 .1 .1 + 3.4±0.1 1 0.5 +0.3 0.45−0.1 (2.54) (5.45) C0 Unit mA A V mW V V mA mW ˚C ˚C ˚C 1.8 (Slit height) 4.2 20.9±0.25 G P1 S5 6 3 2−(4) (Ta=25˚C) 4±0.5 1. VCR Parameter Symbol Rating *1 Forward current IF 50 *1,2 Peak forward current 1 IFM Input VR 6 Reverse voltage P 75 Power dissipation 35 Collector-emitter voltage VCEO 6 Emitterr-collector voltage VECO IC 20 Output Collector current *1 Collector power dissipation 75 PC Operating temperature Topr −25 to +85 Tstg −40 to +100 Storage temperature *3 Soldering temperature Tsol 260 R0.6 1.2 8 3 ■ Applications ■ Absolute Maximum Ratings (Unit : mm) 5 1.5 1. Long case type Case height (GP1S563 : 20.9mm) (GP1S566 : 21.9mm) 2. Snap-in mounting type 3. Gap between light emitter and detector : 3.0mm 4. Case width : 5.0mm 2−0.5 GP1S563 1 4 2 1 2 3 Anode Cathode 3 4 Collector Emitter In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. Internet Internet address for Electronic Components Group http://www.sharp.co.jp/ecg/ GP1S563/GP1S566 ■ Electro-optical Characteristics Parameter Forward voltage Input Peak forward voltage Reverse current Collector dark current Output Collector current Transfer characteristics Collector-emitter saturation voltage MAX. 1.4 4 10 100 15 5.0 (Ta=25˚C) Unit V V µA nA mA mA IF=40mA, IC=0.5mA − − 0.4 V VCE=2V,IC=2mA, RL=100Ω − − 3 4 15 20 µs µs MIN. − − − − VCE (sat) tr tf Rise time Fall time Response time 0.5 0.5 TYP. 1.25 3 − 1 − − Conditions IF=20mA IFM=0.5A VR=3V VCE=20V VCE=5V, IF=20mA VCE=5V, IF=20mA Symbol VF VFM IR ICEO GP1S563 IC GP1S566 IC Fig.1 Forward Current vs. Ambient Temperature Fig.2 Collector Power Dissipation vs. Ambient Temperature Collector power dissipation PC (mW) 60 Forward current IF (mA) 50 40 30 20 10 0 −25 0 25 50 75 85 100 80 75 60 40 20 15 0 −25 100 0 Ambient temperature Ta (°C) Fig.3 Peak Forward Current vs. Duty Ratio 10000 50 75 85 100 Fig.4 Forward Current vs. Forward Voltage 500 Pulse width<=100µs Ta=25°C Ta=75°C Forward current IF (mA) 200 Peak forward current IFM (mA) 25 Ambient temperature Ta (°C) 1000 100 25°C 50°C 100 0°C 50 −20°C 20 10 5 2 1 10 10−3 10−2 10−1 Duty ratio 1 0 0.5 1.0 1.5 2.0 2.5 Forward voltage VF (V) 3.0 3.5 GP1S563/GP1S566 Fig.5 Collector Current vs. Forward Current Fig.6 Collector Current vs. Collector-emitter Voltage IF=50mA 5 5 Collector current IC (mA) Collector current IC (mA) 40mA 4 3 2 4 30mA 3 20mA 2 10mA 1 1 0 0 0 10 20 30 40 0 50 2 4 6 8 10 Collector-emitter voltage VCE (V) Forward current IF (mA) Fig.7 Collector Current vs. Ambient Temperature Fig.8 Collector - emitter Saturation Voltage vs. Ambient Temperature 2.5 0.20 VCE=5V IF=20mA IF=40mA IC=0.5mA Collector-emitter saturation voltage VCE (sat) (V) Collector current IC (mA) 2.0 1.5 1.0 0.15 0.10 0.05 0.5 0.0 −25 0 25 50 75 85 0.00 −25 100 0 Ambient temperature Ta (°C) Fig.9 Collector Dark Current vs. Ambient Temperature 10−6 25 50 1000 VCE=20V 47kΩ Response Time (µs) 10−7 10−8 20kΩ 10kΩ 100 20kΩ 10−9 RL=100kΩ 47kΩ 10−10 −25 25 50 75 85 Ambient temperature Ta (°C) 100 tf 10kΩ tr Ta=25˚C VCC=5V 10 0 100 Fig.10 Response Time vs. Forward Current RL=100kΩ Collector dark current ICEO (A) 75 85 Ambient temperaturet Ta (°C) 3 5 10 15 Forward current IF (mA) 20 GP1S563/GP1S566 Fig.11 Response Time vs. Ambient Temperature 1000 tf RL=100kΩ 47kΩ Response Time (µs) Fig.12 Test Circuit For Response Time 20kΩ 10kΩ VCC RL Input Test terminal Output 90% 100 tr 47kΩ RL=100kΩ −25 0 25 tf tr 10kΩ 20kΩ 10 10% IF IF=20mA VCC=5V 50 75 Ambient temperature Ta (°C) Fig.13 Relative Output Current vs. Moving Distance (Xdirection) Fig.14 Relative Output Current vs. Moving Distance (Xdirection) 90 Shield Shield distance L Shield 90 80 Relative output current (%) Relative output current (%) 80 Sensor 70 60 50 40 30 70 50 40 30 20 20 10 10 1 2 3 Distance L (mm) 4 5 Sensor 60 Shield distance L 100 100 0 −1 0 1 Distance L (mm) 2 3 Application Circuits NOTICE ●The circuit application examples in this publication are provided to explain representative applications of SHARP devices and are not intended to guarantee any circuit design or license any intellectual property rights. SHARP takes no responsibility for any problems related to any intellectual property right of a third party resulting from the use of SHARP's devices. ●Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. SHARP reserves the right to make changes in the specifications, characteristics, data, materials, structure, and other contents described herein at any time without notice in order to improve design or reliability. Manufacturing locations are also subject to change without notice. ●Observe the following points when using any devices in this publication. SHARP takes no responsibility for damage caused by improper use of the devices which does not meet the conditions and absolute maximum ratings to be used specified in the relevant specification sheet nor meet the following conditions: (i) The devices in this publication are designed for use in general electronic equipment designs such as: --- Personal computers --- Office automation equipment --- Telecommunication equipment [terminal] --- Test and measurement equipment --- Industrial control --- Audio visual equipment --- Consumer electronics (ii)Measures such as fail-safe function and redundant design should be taken to ensure reliability and safety when SHARP devices are used for or in connection with equipment that requires higher reliability such as: --- Transportation control and safety equipment (i.e., aircraft, trains, automobiles, etc.) --- Traffic signals --- Gas leakage sensor breakers --- Alarm equipment --- Various safety devices, etc. (iii)SHARP devices shall not be used for or in connection with equipment that requires an extremely high level of reliability and safety such as: --- Space applications --- Telecommunication equipment [trunk lines] --- Nuclear power control equipment --- Medical and other life support equipment (e.g., scuba). ●Contact a SHARP representative in advance when intending to use SHARP devices for any "specific" applications other than those recommended by SHARP or when it is unclear which category mentioned above controls the intended use. ●If the SHARP devices listed in this publication fall within the scope of strategic products described in the Foreign Exchange and Foreign Trade Control Law of Japan, it is necessary to obtain approval to export such SHARP devices. ●This publication is the proprietary product of SHARP and is copyrighted, with all rights reserved. Under the copyright laws, no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, in whole or in part, without the express written permission of SHARP. Express written permission is also required before any use of this publication may be made by a third party. ●Contact and consult with a SHARP representative if there are any questions about the contents of this publication. 115