Diode Semiconductor Korea GI500---GI510 VOLTAGE RANGE: 50 --- 1000 V CURRENT: 3.0 A PLASTIC SILICON RECTIFIERS FEATURES DO--27 Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned witn Freon,Alcohol,lsopropanol and similar solvents The plastic material carries U/L recognition 94V-0 MECHANICAL DATA Case:JEDEC DO-27,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.041 ounces,1.15 grams Mounting position: Any Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. GI 500 GI 501 GI 502 GI 504 GI 506 GI 508 GI 510 UNITS Maximum recurrent peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage V DC 50 100 200 400 600 800 1000 V Maximum average forw ard rectified current 9.5mm lead length, @TA =75 IF(AV) 3.0 A IFSM 100.0 A VF 1.1 V Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous forw ard voltage @ 9.4 A Maximum reverse current at rated DC blocking voltage @TA=25 @TA =100 IR 5.0 Typical junction capacitance (Note1) CJ 35 Typical thermal resistance (Note2) RθJA 20 TJ - 55 ---- + 150 TSTG - 55 ---- + 150 Operating junction temperature range Storage temperature range A 50.0 pF ／Ｗ NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 2. Thermal resistance f rom junction to ambient. www.diode.kr GI500---GI510 Diode Semiconductor Korea FIG.2 --MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 100 5 4 3 S in g le P h a s e H a lf W a v e 6 0 H R e s is tiv e o r In d u c tiv e L o a d 2 Z 1 0 25 50 100 75 125 150 175 PEAK FORWARD CURRENT AMPERES 6 AMPERES AVERAGE FORWARD RECTIFIED CURRENT FIG.1 -- FORWARD DERATING CURVE 80 60 40 TJ =125 8.3ms Single Half Sine Wave 20 0 2 0 AMBIENT TEMPERATURE, 4 6 10 4 0 60 20 100 NUMBER OF CYCLES AT 60Hz FIG.3 -- TYPICAL INSTANTANEOUS FORWARD FIG.4 -- TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT MICROAMPERES 100 TJ=25 Pulse Width=300uS 40 20 10 4 AMPERES INSTANTANEOUS FORWARD CURRENT CHARACTERISTICS 1 0.4 0.1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 100 10 TJ= 1 5 0 1 T J= 1 0 0 0.1 T J= 2 5 0.01 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,% INSTANTANEOUS FORWARD VOLTAGE,VOLTS FIG.6 -- TYPICAL TRANSIENT THERMAL IMPEDANCE 100 60 40 20 10 4 TJ=25 f=1MHz 2 .1 .1 .2 .4 1.0 2 4 10 20 40 REVERSE VOLTAGE,VOLTS 100 TRANSIENT THERMAL IMPEDANCE, JUNCTION CAPACITANCE,pF /W FIG.5 -- TYPICAL JUNCTION CAPACITANCE 100 10 1 0.1 0.01 0.1 1 10 10 PULSE DURATION, SEC www.diode.kr